S1NBB80
800V 1A
Copyright & Copy;2002 Shindengen Electric Mfg. Co., Ltd.
SHINDENGEN
OUTLINE DIMENSIONS
Unit : mm
RATINGS
Case : 1NA
General Purpose Rectifiers SMT Bridges
Absolute Maximum Ratings (If not specified Ta=25)
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -40 to 150
Operating Junction Temperature Tj 150
Maximum Reverse Voltage VRM 800 V
Average Rectified Forward Current IO50Hz sine wave, R-load, Glass-epoxy substrate, Ta=26 *1 1A
IO50Hz sine wave, R-load, Glass-epoxy substrate, Ta=25 *2 0.84 A
Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=2550 A
Current Squared Time I
2
t1mst10ms@Tj=256A
2
s
Electrical Characteristics (If not specified Ta=25)
Item Symbol Conditions Ratings Unit
Forward Voltage VFIF=0.5A, Pulse measurement, Rating of per diode Max 1.05 V
Reverse Current IRVR=VRM, Pulse measurement, Rating of per diode Max 10 ÊA
Æjl junction to lead Max 15
Thermal Resistance Æja junction to ambient *1 Max 68 /W
Æja junction to ambient *2 Max 84
*1 : Glass epoxy substrate (pattern area : 324mm2)
*2 : Glass epoxy substrate (pattern area : 101mm2)
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0.1
1
10
S1NBB80
Ta=150°C[TYP]
Ta= 25° C[TYP ]
5
2
0.2
0.5
For ward Voltage
IF [A]
Forward Current
Pulse measur ement per diode
VF [V]
For ward Voltage
0
0.5
1
1.5
2
0 0.2 0.4 0.6 0.8 1 1.2
SIN
S1NBB80 Forward Power Dissi pat ion
PF [W]
IO [A]
Average R ecti fi ed F or ward C urr ent
Forward Power Dissi pat ion
Tj = 150°C
0 20 40 60 80 100 120 140 160
0
0.2
0.4
0.6
0.8
1
1.2
SIN
S1NBB80
VR = V RM
IO [A]
Ta [°C]
Ambient Temperature
Average R ecti fi ed F or ward C urr ent
Derati ng Curve
G lass -epoxy subs tr ate
Soldering land 9mm x 9mm
Conductor layer 35 m
µ
0
10
20
30
40
50
60
1 10 100
S1NBB80
25 20
50
P eak Surge Forward Capability
Number of C ycles [c yc l e]
IFSM [A]
Peak Sur ge F or ward C urr ent
IFSM
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj = 25°C bef or e
su rge cu rrent is applied
