Document Number: MRF8P20160H www.DataSheet4U.com Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) hD (%) Output PAR (dB) ACPR (dBc) 1880 MHz 16.5 44.8 7.0 -29.8 1900 MHz 16.6 45.3 6.9 -30.1 1920 MHz 16.5 45.8 6.9 -30.6 1880-2025 MHz, 37 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET * Capable of Handling 10:1 VSWR, @ 32 Vdc, 1900 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) * Typical Pout @ 3 dB Compression Point ] 160 Watts CW 2025 MHz * Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) hD (%) Output PAR (dB) ACPR (dBc) 2025 MHz 15.3 44.0 6.8 -30.0 CASE 465H-02, STYLE 1 NI-780S-4 RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB Features * Production Tested in a Symmetrical Doherty Configuration * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate-Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +65 Vdc Gate-Source Voltage VGS -6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -65 to +150 C Case Operating Temperature TC 150 C Operating Junction Temperature (1,2) TJ 225 C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. (c) Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF8P20160HSR3 1 www.DataSheet4U.com Table 2. Thermal Characteristics Characteristic Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 81C, Pout = 37 W CW, 1900 MHz 28 Vdc, IDQA = 554 mA 28 Vdc, VGSB = 1.6 Vdc Unit C/W RJC 0.95 0.95 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 2 (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 116 Adc) VGS(th) 1.2 1.8 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 550 mAdc, Measured in Functional Test) VGS(Q) 1.9 2.7 3.4 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1.5 Adc) VDS(on) 0.05 0.11 0.15 Vdc Off Characteristics (3) On Characteristics (3) Functional Tests (4,5) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 W Avg., f = 1920 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 15.5 16.5 18.5 dB Drain Efficiency D 43.5 45.8 -- % PAR 6.4 6.9 -- dB ACPR -- -30.6 -28.5 dBc Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio (5) Typical Broadband Performance (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 W Avg., f = 1920 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency Gps (dB) hD (%) Output PAR (dB) ACPR (dBc) 1880 MHz 16.5 44.8 7.0 -29.8 1900 MHz 16.6 45.3 6.9 -30.1 1920 MHz 16.5 45.8 6.9 -30.6 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Each side of device measured separately. 4. Part internally matched both on input and output. 5. Measurement made with device in a Symmetrical Doherty configuration. (continued) MRF8P20160HSR3 2 RF Device Data Freescale Semiconductor www.DataSheet4U.com Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit (1) Typical Performance (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, 1880-1920 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB -- 107 -- W Pout @ 3 dB Compression Point, CW P3dB -- 160 -- W -- 13 -- IMD Symmetry @ 40 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres -- 50 -- MHz Gain Flatness in 40 MHz Bandwidth @ Pout = 37 W Avg. GF -- 0.2 -- dB Gain Variation over Temperature (-30 C to +85C) G -- 0.01 -- dB/C P1dB -- 0.009 -- dBm/C Output Power Variation over Temperature (-30 C to +85C) MHz Typical Broadband Performance -- 2025 MHz (1) (In Freescale 2025 Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 W Avg., f = 2025 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency Gps (dB) hD (%) Output PAR (dB) ACPR (dBc) 2025 MHz 15.3 44.0 6.8 -30.0 1. Measurement made with device in a Symmetrical Doherty configuration. MRF8P20160HSR3 RF Device Data Freescale Semiconductor 3 www.DataSheet4U.com VGA C10 C20 C22 C8 C3 Z1 C1 C2 R1 C18 C16 CUT OUT AREA C5 C24 VDA R2 C6 C C12 C26 C14 C15 P C13 C4 C17 R3 C7 C19 VDB C25 C11 C9 MRF8P20160H Rev. 1 C21 C23 VGB Figure 2. MRF8P20160HSR3 Test Circuit Component Layout Table 5. MRF8P20160HSR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C12, C13 10 pF Chip Capacitors ATC600F100JT250XT ATC C3 0.3 pF Chip Capacitor ATC600F0R3BT250XT ATC C4, C5 1.1 pF Chip Capacitors ATC600F1R1BT250XT ATC C6, C7, C18, C19 12 pF Chip Capacitors ATC600F120JT250XT ATC C8, C9, C20, C21, C22, C23 10 F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C10, C11 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C14, C15 2.0 pF Chip Capacitors ATC600F2R0BT250XT ATC C16, C17 2.2 pF Chip Capacitors ATC600F2R2BT250XT ATC C24, C25 220 F, 50 V Electrolytic Capacitors 227CKS505M Illinois Cap C26 0.8 pF Chip Capacitor ATC600F0R8BT250XT ATC R1 50 , 4 W Chip Resistor CW12010T0050GBK ATC R2, R3 8.25 , 1/4 W Chip Resistors CRCW12068R25FKEA Vishay Z1 1900 MHz Band 90, 3 dB Chip Hybrid Coupler GCS351-HYB1900 Soshin PCB 0.020, r = 3.5 RO4350B Rogers MRF8P20160HSR3 4 RF Device Data Freescale Semiconductor www.DataSheet4U.com Single-ended l 4 l 4 l 2 Quadrature combined l 4 Doherty l 2 Push-pull Figure 3. Possible Circuit Topologies MRF8P20160HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS Gps 16 15.5 PARC -10 -29 15 14.5 -30 IRL -31 14 13.5 -32 ACPR 13 1880 1900 1920 1940 1960 1980 2000 2020 -13 -16 -19 -22 -33 2040 -25 -2.5 -3 -3.5 -4 PARC (dB) 16.5 ACPR (dBc) Gps, POWER GAIN (dB) 17 46 VDD = 28 Vdc, Pout = 37 W (Avg.), IDQA = 550 mA 44 VGSB = 1.6 Vdc, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth 42 Input Signal PAR = 9.9 dB @ 40 0.01% Probability on CCDF -28 IRL, INPUT RETURN LOSS (dB) 48 D D, DRAIN EFFICIENCY (%) 18 17.5 www.DataSheet4U.com -4.5 -5 f, FREQUENCY (MHz) Figure 4. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 37 Watts Avg. IMD, INTERMODULATION DISTORTION (dBc) -2 0 IM3-U -3 0 IM3-L -4 0 IM5-U IM5-L -5 0 IM7-L IM7-U -6 0 VDD = 28 Vdc, Pout = 40 W (PEP) IDQA = 550 mA, VGSB = 1.6 Vdc, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1900 MHz -70 10 1 100 TWO-T ONE SPACING (MHz) Figure 5. Intermodulation Distortion Products versus Two-T one Spacing 17 -1 D 16 15 14 13 12 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) -1 dB = 16 W Gps -2 -2 dB = 26 W 60 0 50 -10 40 ACPR -3 30 -3 dB = 36 W -4 20 VDD = 28 Vdc, IDQA = 550 mA VGSB = 1.6 Vdc, f = 1900 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF -5 -6 0 20 40 60 -20 -30 ACPR (dBc) 0 D, DRAIN EFFICIENCY (%) 18 -40 10 -50 0 -60 PARC 80 100 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak-to-Average Ratio Compression (PARC) versus Output Power MRF8P20160HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16 1920 MHz ACPR 60 0 50 -10 40 1900 MHz 15 30 1880 MHz 1880 MHz 14 1920 MHz 20 Gps 1900 MHz 10 13 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 12 1 10 0 300 100 -20 ACPR (dBc) 17 Gps, POWER GAIN (dB) D VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth D, DRAIN EFFICIENCY (%) 18 www.DataSheet4U.com -30 -40 -50 -60 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 18 Gain 15 -7 GAIN (dB) IRL 9 -21 6 VDD = 28 Vdc Pin = 0 dBm IDQA = 550 mA VGSB = 1.6 Vdc 3 0 1660 1720 1780 1840 1900 1960 2020 2080 IRL (dB) -14 12 -28 -35 -42 2140 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response W-CDMA TEST SIGNAL 10 100 0 -10 3.84 MHz Channel BW -20 1 -30 Input Signal 0.1 (dB) PROBABILITY (%) 10 0.01 0.0001 0 2 4 6 -50 -60 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0.001 -40 +ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -70 -80 8 10 PEAK-T O-A VERAGE (dB) Figure 9. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal 12 -90 -100 -9 -7.2 -5.4 -3.6 -1.8 0 3.6 1.8 5.4 7.2 9 f, FREQUENCY (MHz) Figure 10. Single-Carrier W-CDMA Spectrum MRF8P20160HSR3 RF Device Data Freescale Semiconductor 7 www.DataSheet4U.com VDD = 28 Vdc, IDQA = 550 mA Max Pout (1) f MHz Watts dBm Zsource W Zload W 1880 98 49.9 5.14 - j9.41 1.56 - j5.24 1900 98 49.9 7.59 - j9.88 1.58 - j5.37 1920 97 49.9 8.90 - j9.65 1.57 - j5.48 (1) Maximum output power measurement reflects pulsed 1 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Output Matching Network Device Under Test Input Matching Network Z Z source load Figure 11. Maximum Output Power -- Doherty Load Pull Optimization for Carrier Side VDD = 28 Vdc, IDQA = 550 mA f MHz Max Eff. (1) % Zsource W Zload W 1880 65.1 5.14 - j9.41 3.04 - j3.65 1900 64.6 7.59 - j9.88 4.13 - j2.87 1920 64.6 8.90 - j9.65 4.12 - j3.15 (1) Maximum efficiency measurement reflects pulsed 1 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Maximum Efficiency -- Doherty Load Pull Optimization for Carrier Side MRF8P20160HSR3 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS www.DataSheet4U.com VDD = 28 Vdc, IDQA = 550 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 56 Pout, OUTPUT POWER (dBm) 55 Ideal 54 1920 MHz 53 52 1880 MHz 51 Actual 50 1900 MHz 49 1880 MHz 1900 MHz 1920 MHz 48 47 46 45 26 27 28 29 31 30 32 33 34 35 36 37 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 1880 103 50.1 122 50.9 1900 104 50.2 120 50.8 1920 104 50.2 118 50.7 Test Impedances per Compression Level f (MHz) Zsource Zload 1880 P1dB 5.14 - j9.41 1.65 - j5.46 1900 P1dB 7.59 - j9.88 1.67 - j5.43 1920 P1dB 8.90 - j9.65 1.66 - j5.50 Figure 13. Pulsed CW Output Power versus Input Power @ 28 V NOTE: Measurement made on the Class AB, carrier side of the device. MRF8P20160HSR3 RF Device Data Freescale Semiconductor 9 ALTERNATE CHARACTERIZATION -- 2025 MHz www.DataSheet4U.com VGA C8 C22 C24 C20 C10 C26 VGA R2 C6 C4 C3 Z1 C1 C2 R1 CUT OUT AREA C18* C14 C5 C C12 C16 C28 C15 C17 C13 P C19* R3 C7 C21 VGB C27 C11 C9 MRF8P20160H Rev. 1 C23 C25 VGB * Stacked Figure 14. MRF8P20160HSR3 Test Circuit Component Layout -- 2025 MHz Table 6. MRF8P20160HSR3 Test Circuit Component Designations and Values -- 2025 MHz Part Description Part Number Manufacturer C1, C2, C6, C7, C12, C13, C20, C21 15 pF Chip Capacitors ATC600F150JT250XT ATC C3, C14, C15 0.3 pF Chip Capacitors ATC600F0R3BT250XT ATC C4, C5 2.4 pF Chip Capacitors ATC600F2R4BT250XT ATC C8, C9, C22, C23, C24, C25 10 F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C10, C11 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C16, C17 0.6 pF Chip Capacitors ATC600F0R6BT250XT ATC C18, C19 1.1 pF Chip Capacitors ATC600F1R1BT250XT ATC C26, C27 220 F, 50 V Electrolytic Capacitors 227CKS505M Illinois Cap C28 0.8 pF Chip Capacitors ATC600F0R8BT250XT ATC R1 50 , 4 W Chip Resistor CW12010T0050GBK ATC R2, R3 8.25 , 1/4 W Chip Resistors CRCW12068R25FKEA Vishay Z1 1900 MHz Band 90, 3 dB Chip Hybrid Coupler GCS351-HYB1900 Soshin PCB 0.020, r = 3.5 RO4350B Rogers MRF8P20160HSR3 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS -- 2025 MHz 43 42 41 15 -16 -30 -16.5 -31 IRL 14.9 -32 14.8 -33 ACPR 14.7 1995 2000 2005 2010 2015 2020 2025 2030 -17 -17.5 -18 -34 2035 -18.5 -2.5 -3 -3.5 -4 PARC (dB) PARC -29 IRL, INPUT RETURN LOSS (dB) 40 Gps 15.2 15.1 D, DRAIN EFFICIENCY (%) 44 D 15.6 V = 28 Vdc, P = 37 W (Avg.), I DD out DQA = 550 mA 15.5 VGSB = 1.6 Vdc, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth Input Signal 15.4 PAR = 9.9 dB @ 0.01% Probability on CCDF 15.3 ACPR (dBc) Gps, POWER GAIN (dB) 15.7 www.DataSheet4U.com -4.5 -5 f, FREQUENCY (MHz) Figure 15. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 20 Watts Avg. D 15 60 0 50 -10 40 2025 MHz ACPR 2010 MHz 14 30 13 20 2025 MHz 2010 MHz 12 10 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 11 -30 -40 -50 Gps 10 1 -20 ACPR (dBc) Gps, POWER GAIN (dB) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc Single-Carrier W-CDMA, 3.84 MHz Channel 16 Bandwidth D, DRAIN EFFICIENCY (%) 17 0 300 100 -60 Pout, OUTPUT POWER (WATTS) AVG. Figure 16. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 18 -10 12 -20 9 -30 -40 6 VDD = 28 Vdc Pin = 0 dBm IDQA = 550 mA VGSB = 1.6 Vdc IRL 3 0 1625 IRL (dB) GAIN (dB) Gain 15 1725 1825 1925 2025 2125 2225 -50 2325 -60 2425 f, FREQUENCY (MHz) Figure 17. Broadband Frequency Response MRF8P20160HSR3 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS www.DataSheet4U.com MRF8P20160HSR3 12 RF Device Data Freescale Semiconductor www.DataSheet4U.com MRF8P20160HSR3 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION AND SOFTWARE www.DataSheet4U.com Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Apr. 2010 Description * Initial Release of Data Sheet MRF8P20160HSR3 14 RF Device Data Freescale Semiconductor www.DataSheet4U.com How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8P20160HSR3 Document Number: RF Device Data MRF8P20160H Rev. 0, 4/2010 Freescale Semiconductor 15