Silicon Hot-Carrier Diodes
SCHOTTKY Barrier Diodes
These devices are designed primarily for high–efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low–cost, high–volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
MBD301 MMBD301LT1
Rating Symbol Value Unit
Reverse Voltage VR30 Volts
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF280
2.8 200
2.0 mW
mW/°C
Operating Junction
Temperature Range TJ–55 to +125 °C
Storage Temperature Range Tstg –55 to +150 °C
DEVICE MARKING
MMBD301LT 1 = 4 T
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 µA) V(BR)R 30 Volts
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT 0.9 1.5 pF
Reverse Leakage (VR = 25 V) Figure 3 IR 13 200 nAdc
Forward Voltage (IF = 1.0 mAdc) Figure 4 VF 0.38 0.45 Vdc
Forward Voltage (IF = 10 mAdc) Figure 4 VF 0.52 0.6 Vdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev . 2 1Publication Order Number:
MBD301/D
MBD301
MMBD301LT1
ON Semiconductor Preferred Devices
CASE 182–06, STYLE 1
(TO–226AC)
MBD301
CASE 318–08, STYLE 8
SOT– 2 3 ( TO–236AB)
MMBD301LT1
12
3
12
3
CATHODE
1
ANODE
30 VOLTS
SILICON HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
2
CATHODE
1
ANODE
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TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Total Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Minority Carrier Lifetime
IF, FORWARD CURRENT (mA)
Figure 3. Reverse Leakage
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
, FORWARD CURRENT (mA)IF
, REVERSE LEAKAGE ( A)IR
0.2 0.4 0.6 0.8 1.0 1.2
100
10
0 6.0 12 18 24
10
1.0
0.1
0.01
0.001
01020
500
0
0 3.0 6.0 9.0 12 15 21
1.6
3024 2718
1.2
0.8
0.4
f = 1.0 MHz
TA = -40°C
TA = 85°C
TA = 25°C
1.0
0.1
30 40 50 60 70 80 10090
KRAKAUER METHOD
0
2.8
2.4
2.0
30
TA = 100°C
75°C
25°C
, TOTAL CAPACITANCE (pF)CT
, MINORITY CARRIER LIFETIME (ps)
400
300
200
100
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
SAMPLING
OSCILLOSCOPE
(50 INPUT)
PADS
CAPACITIVE
CONDUCTION
FORWARD
CONDUCTION
STORAGE
CONDUCTION
DUT
IF(PEAK)
IR(PEAK)
Figure 5. Krakauer Method of Measuring Lifetime
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The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device
which in this case is 225 milliwatts.
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT–23 POWER DISSIPATION
PD = TJ(max) – TA
RθJA
PD = 150°C – 25°C
556°C/W = 225 milliwatts
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined by T J(max), the maximum rated junction tempera-
ture of the die, RθJA, the thermal resistance from the
device junction to ambient, and the operating tempera-
ture, TA. Using the values provided on the data sheet for
the SOT–23 package, PD can be calculated as follows:
The 55 6 °C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225 milli-
watts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the
same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device
is heated to a high temperature, failure to complete
soldering within a short time could result in device
failure. Therefore, the following items should always be
observed in order to minimize the thermal stress to which
the devices are subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of
the leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet.
When using infrared heating with the reflow
soldering method, the difference shall be a maximum
of 10°C.
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device
should be allowed to cool naturally for at least three
minutes. Gradual cooling should be used as the use
of forced cooling will increase the temperature
gradient and result in latent failure due to mechanical
stress.
Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause exces-
ih lhkd hih lid
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PACKAGE DIMENSIONS
CASE 182–06
ISSUE L
TO–92 (TO–226AC)
ÉÉ
ÉÉ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
A
L
K
B
R
P
D
HG
XX
SEATING
PLANE
12
V
N
C
N
SECTION X–X
D
J
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.21
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.050 BSC 1.27 BSC
H0.100 BSC 2.54 BSC
J0.014 0.016 0.36 0.41
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.03 2.66
P--- 0.050 --- 1.27
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
STYLE 1:
PIN 1. ANODE
2. CATHODE
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PACKAGE DIMENSIONS
CASE 318–08
ISSUE AF
SOT–23 (TO–236AB)
DJ
K
L
A
C
BS
H
GV
3
12
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
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Notes
MBD301 MMBD301LT1
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Notes
MBD301 MMBD301LT1
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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PUBLICATION ORDERING INFORMATION
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Phone: 81–3–5740–2700
Email: r14525@onsemi.com
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MBD301/D
Thermal Clad is a trademark of the Bergquist Company.
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