ON Semiconductor MBD301 MMBD301LT1 Silicon Hot-Carrier Diodes SCHOTTKY Barrier Diodes ON Semiconductor Preferred Devices These devices are designed primarily for high-efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) * Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V * Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301 1 2 CASE 182-06, STYLE 1 (TO-226AC) MBD301 2 CATHODE MAXIMUM RATINGS (TJ = 125C unless otherwise noted) MBD301 Rating MMBD301LT1 Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25C Derate above 25C PF Operating Junction Temperature Range TJ 280 2.8 200 2.0 1 ANODE 3 mW mW/C 1 C 2 -55 to +125 Storage Temperature Range Tstg CASE 318-08, STYLE 8 SOT-23 (TO-236AB) MMBD301LT1 C -55 to +150 DEVICE MARKING 3 CATHODE MMBD301LT1 = 4T 1 ANODE ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 A) Symbol Min Typ Max Unit V(BR)R 30 -- -- Volts Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT -- 0.9 1.5 pF Reverse Leakage (VR = 25 V) Figure 3 IR -- 13 200 nAdc Forward Voltage (IF = 1.0 mAdc) Figure 4 VF -- 0.38 0.45 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF -- 0.52 0.6 Vdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 2 1 Publication Order Number: MBD301/D MBD301 MMBD301LT1 TYPICAL ELECTRICAL CHARACTERISTICS 500 f = 1.0 MHz 2.4 , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) 2.8 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 TA = 100C 1.0 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 20 Figure 2. Minority Carrier Lifetime 10 75C 0.1 25C 0.01 0.001 10 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 10 1.0 0.1 30 TA = 25C 0.2 Figure 3. Reverse Leakage IF(PEAK) TA = -40C TA = 85C 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) STORAGE CONDUCTION PADS DUT Figure 5. Krakauer Method of Measuring Lifetime http://onsemi.com 2 SAMPLING OSCILLOSCOPE (50 INPUT) 1.2 MBD301 MMBD301LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excesi h l h k d hi h l i d TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 3 MBD301 MMBD301LT1 PACKAGE DIMENSIONS TO-92 (TO-226AC) CASE 182-06 ISSUE L A B R SEATING PLANE EE EE D L P J K SECTION X-X X X D G H V 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. C N N STYLE 1: PIN 1. ANODE 2. CATHODE http://onsemi.com 4 DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 --0.250 --0.080 0.105 --0.050 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 --6.35 --2.03 2.66 --1.27 2.93 --3.43 --- MBD301 MMBD301LT1 PACKAGE DIMENSIONS SOT-23 (TO-236AB) CASE 318-08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 V B S 2 G C D H K J STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE http://onsemi.com 5 DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MBD301 MMBD301LT1 Notes http://onsemi.com 6 MBD301 MMBD301LT1 Notes http://onsemi.com 7 MBD301 MMBD301LT1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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