SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR FZT857 ISSUE 4 - SEPTEMBER 1997 FEATURES * Up to 3.5 Amps continuous collector current, up to 5 Amp peak * VCEO = 300V * Very low saturation voltage * Excellent hFE specified up to 3 Amps PARTMARKING DETAIL COMPLEMENTARY TYPE - C E FZT857 FZT957 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 350 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 5 A Continuous Collector Current IC Power Dissipation at Tamb=25C Ptot Operating and Storage Temperature Range Tj:Tstg 3.5 A 3 W -55 to +150 C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches square.