SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
ISSUE 4 - SEPTEMBER 1997
FEATURES
* Up to 3.5 Amps continuous collector current, up to 5 Amp peak
*V
CEO = 300V
* Very low saturation voltage
* Excellent hFE specified up to 3 Amps
PARTMARKING DETAIL - FZT857
COMPLEMENTARY TYPE - FZT957
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 350 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 6V
Peak Pulse Current ICM 5A
Continuous Collector Current IC3.5 A
Power Dissipation at Tamb
=25°C Ptot 3W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches square.
FZT857
C
C
E
B
