IKW50N60T q TrenchStop(R) Series Low Loss DuoPack : IGBT in TrenchStop(R) and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode * * * * * * * * * * * * C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop(R) and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKW50N60T G E PG-TO-247-3 VCE IC VCE(sat),Tj=25C Tj,max Marking Package 600V 50A 1.5V 175C K50T60 PG-TO-247-3 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current, limited by Tjmax IC Value Unit 600 V A 2) TC = 25C 80 TC = 100C 50 Pulsed collector current, tp limited by Tjmax ICpuls 150 Turn off safe operating area (VCE 600V, Tj 175C) - 150 Diode forward current, limited by Tjmax IF TC = 25C 100 TC = 100C 50 Diode pulsed current, tp limited by Tjmax IFpuls 150 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 333 W Operating junction temperature Tj -40...+175 C Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Short circuit withstand time 3) VGE = 15V, VCC 400V, Tj 150C 260 1 J-STD-020 and JESD-022 Value limited by bond wire 3) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Power Semiconductors 1 Rev. 2.4 Sep 08 IKW50N60T q TrenchStop(R) Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.45 K/W RthJCD 0.8 RthJA 40 Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j = 25C - 1.5 2 T j = 175 C - 1.9 - T j = 25C - 1.65 2.05 T j = 175 C - 1.6 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =0.2mA Collector-emitter saturation voltage VCE(sat) Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current VF V V G E = 15 V, I C =50A VGE=0V, IF=50A VGE(th) I C =0.8mA,V C E =V G E ICES V C E = 60 0 V , VGE=0V A T j = 25C - - 40 T j = 175 C - - 1000 Gate-emitter leakage current IGES V C E = 0 V , V G E =20V - - 100 nA Transconductance gfs V C E =20V, I C =50A - 31 - S Integrated gate resistor RGint - Dynamic Characteristic Input capacitance Ciss V C E =25V, - 3140 - Output capacitance Coss VGE=0V, - 200 - Reverse transfer capacitance Crss f=1MHz - 93 - Gate charge QGate V C C = 48 0 V, I C =50A - 310 - nC - 13 - nH - 458.3 - A pF V G E =15V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current1) 1) IC(SC) V G E =15V,t S C 5 s V C C = 400 V, T j 15 0C Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.4 Sep 08 IKW50N60T q TrenchStop(R) Series Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. Typ. max. - 26 - - 29 - - 299 - - 29 - - 1.2 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns - 1.4 - Ets T j = 25C , V C C = 40 0 V, I C =50A, V G E = 0 /1 5 V, RG= 7 , L 1 ) =1 03nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. - 2.6 - Diode reverse recovery time trr T j = 25C , - 143 - ns Diode reverse recovery charge Qrr V R = 40 0 V , I F =50A, - 1.8 - C Diode peak reverse recovery current Irrm d i F /d t= 1280 A/s - 27.7 - A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 671 - A/s mJ Anti-Parallel Diode Characteristic Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. Typ. max. - 27 - - 33 - - 341 - - 55 - - 1.8 - Unit IGBT Characteristic - 1.8 - Ets T j = 175 C , V C C = 40 0 V, I C =50A, V G E = 0 /1 5 V, RG= 7 L 1 ) =1 03nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. - 3.6 - Diode reverse recovery time trr T j = 175 C - 205 - ns Diode reverse recovery charge Qrr V R = 40 0 V , I F =50A, - 4.3 - C Diode peak reverse recovery current Irrm d i F /d t= 1280 A/s - 40.7 - A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 449 - A/s Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns mJ Anti-Parallel Diode Characteristic 1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.4 Sep 08 IKW50N60T q TrenchStop(R) Series 140A tp=2s 100A 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A T C =80C 80A T C =110C 60A 40A 20A 0A 100H z Ic Ic 1kH z 10kH z 100kH z DC 10V 100V 10ms 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V) 80A IC, COLLECTOR CURRENT POWER DISSIPATION Ptot, 50s 1ms 1V 300W 100W 10A 1A f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 7) 250W 10s 200W 150W 60A 40A 20A 50W 0W 25C 50C 75C 0A 25C 100C 125C 150C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C) Power Semiconductors 4 75C 125C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C) Rev. 2.4 Sep 08 IKW50N60T q TrenchStop(R) Series 120A V GE =20V 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A 15V 13V 80A 11V 9V 60A 7V 40A 20A 0V 1V 2V 15V 13V 80A 11V 60A 9V 7V 40A 0A 3V 0V 80A 60A 40A T J = 1 7 5 C 20A 2 5 C 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V) Power Semiconductors 1V 2V 3V 4V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) IC, COLLECTOR CURRENT V GE =20V 20A 0A 0A 100A 2.5V IC =100A 2.0V IC =50A 1.5V IC =25A 1.0V 0.5V 0.0V 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.4 Sep 08 IKW50N60T q TrenchStop(R) Series t d(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES t d(off) tr tf t d(on) 100ns tf tr t d(on) 10ns 0A 20A 40A 60A 10ns 80A 0 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 7, Dynamic test circuit in Figure E) 5 10 15 20 25 RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tf tr t d(on) 10ns 25C 50C 75C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50C 100C 125C 150C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, RG=7, Dynamic test circuit in Figure E) Power Semiconductors VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.8mA) 6 Rev. 2.4 Sep 08 IKW50N60T q TrenchStop(R) Series *) Eon and Ets include losses due to diode recovery *) E on an d E ts in c lud e lo s se s Ets* Eon* 4.0mJ Eoff 2.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 6.0mJ 0A 20A 40A 60A 80A 5.0 m J 4.0 m J 3.0 m J E off 2.0 m J E on * 1.0 m J 0 IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 7, Dynamic test circuit in Figure E) 2.0mJ Eoff Eon* 75C 4m J E on * 3m J E ts * 2m J E off 1m J 0m J 300V 100C 125C 150C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, RG = 7, Dynamic test circuit in Figure E) Power Semiconductors E, SWITCHING ENERGY LOSSES due to diode recovery 3.0mJ 50C 20 *) E on and E ts include losses Ets* 0.0mJ 25C 10 RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E) *) Eon and Ets include losses due to diode recovery E, SWITCHING ENERGY LOSSES E ts * 0.0 m J 0.0mJ 1.0mJ du e to d io d e re co v ery 6.0 m J 8.0mJ 350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 50A, RG = 7, Dynamic test circuit in Figure E) 7 Rev. 2.4 Sep 08 TrenchStop(R) Series IKW50N60T q VGE, GATE-EMITTER VOLTAGE C iss 15V c, CAPACITANCE 1nF 120V 480V 10V C oss 100pF 5V C rss 0V 0nC 100nC 200nC 0V 300nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=50 A) 10V 20V 30V 40V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) SHORT CIRCUIT WITHSTAND TIME 700A 600A 500A 400A 300A 200A tSC, IC(sc), short circuit COLLECTOR CURRENT 12s 800A 100A 0A 12V 14V 16V 8s 6s 4s 2s 0s 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C) Power Semiconductors 10s 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C) 8 Rev. 2.4 Sep 08 IKW50N60T q TrenchStop(R) Series 10 K/W ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE D=0.5 0.2 -1 10 K/W 0.1 R,(K/W) 0.18355 0.12996 0.09205 0.03736 0.00703 0.05 0.02 -2 10 K/W , (s) -2 7.425*10 -3 8.34*10 -4 7.235*10 -4 1.035*10 -5 4.45*10 R1 R2 0.01 C1= 1/R1 C2= 2/R2 D=0.5 0.2 -1 10 K/W 0.05 0.02 10s 100s 1ms 6 R2 0.01 -2 10 K/W 10ms 100ms C1= 1/R1 1s C2= 2/R2 10s 100s 1ms 10ms 100ms tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) 4.0C 300ns Qrr, REVERSE RECOVERY CHARGE TJ=175C trr, REVERSE RECOVERY TIME , (s) -2 7.037*10 -3 7.312*10 -4 6.431*10 -5 4.79*10 single pulse tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T) 250ns 200ns 150ns TJ=25C 100ns 50ns 0ns 700A/s R,(K/W) 0.2441 0.2007 0.1673 0.1879 R1 single pulse 1s 0.1 T J =175C 3.5C 3.0C 2.5C 2.0C 1.5C T J =25C 1.0C 0.5C 0.0C 800A/s 900A/s 1000A/s diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=50A, Dynamic test circuit in Figure E) Power Semiconductors 9 700A/s 800A/s 900A/s 1000A/s diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 50A, Dynamic test circuit in Figure E) Rev. 2.4 Sep 08 IKW50N60T q TrenchStop(R) Series T J =175C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT -750A/s 30A T J =25C 20A 10A Irr, REVERSE RECOVERY CURRENT 40A 0A 700A/s 800A/s 900A/s diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 50A, Dynamic test circuit in Figure E) -450A/s T J=175C -300A/s -150A/s 800A/s 900A/s I F =100A VF, FORWARD VOLTAGE 2.0V 100A T J =25C 175C 80A 60A 40A 1000A/s diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=50A, Dynamic test circuit in Figure E) 120A IF, FORWARD CURRENT -600A/s 0A/s 700A/s 1000A/s T J=25C 50A 1.5V 25A 1.0V 0.5V 20A 0A 0V 1V 0.0V 0C 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors 10 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2.4 Sep 08 TrenchStop(R) Series IKW50N60T q PG-TO247-3 M M MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60 5.44 3 19.80 4.17 3.50 5.49 6.04 Power Semiconductors MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102 Z8B00003327 0 0 5 5 7.5mm 0.214 3 0.780 0.164 0.138 0.216 0.238 20.31 4.47 3.70 6.00 6.30 11 0.799 0.176 0.146 0.236 0.248 17-12-2007 03 Rev. 2.4 Sep 08 IKW50N60T q TrenchStop(R) Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 r2 n rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Figure B. Definition of switching losses Power Semiconductors 12 Rev. 2.4 Sep 08 TrenchStop(R) Series IKW50N60T q Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 13 Rev. 2.4 Sep 08