MMF
60
R2
90
P Dat
asheet
Jun.
2013
Revision 1.1
Mag
naChip Se
miconductor Ltd
.
1
Parameter
V
alue
Unit
V
DS
@
T
j,max
650
V
R
DS(on),max
0.29
Ω
V
TH
,typ
3
V
I
D
13
A
Q
g,typ
33
nC
Order Code
Marking
T
emp. Range
Package
Packing
RoHS Status
MMF60R
290P
TH
60R290P
-55 ~ 150
℃
TO
-
220F
T
ube
Halogen Free
MMF
60R
2
90
P
600V 0.29
Ω
N-channel MOSFET
Description
MMF60R
2
90P
is power MOSFE
T using ma
gnachip
’
s advanced super
junction te
chnology that
can
realize v
ery low on-resistance and ga
te charge.
It wil
l provide much high ef
f
iciency
by using
optimized char
ge coupling technolo
gy
.
These user friendl
y devices giv
e an advan
tage of Low EM
I to
designers as w
ell as low
switching loss.
Features
Low Pow
er Loss by High Speed
Switching and
Low
On
-Resistance
100%
Av
alanche
T
ested
Green Packa
ge
–
Pb Free Plating, Hal
ogen Free
Key Parameters
Ordering Informatio
n
Applications
PFC Pow
er Supply Stages
Switching
Applications
Adapter
Motor Control
DC
–
DC Converters
D
G
S
G
D
S
Package & Internal
Circui
t
MMF
60
R2
90
P Dat
asheet
Jun.
2013
Revision 1.1
Mag
naChip Se
miconductor Ltd
.
2
Parameter
Symbol
Rating
Unit
Note
Drain
–
Source vol
tage
V
DSS
600
V
Gate
–
Source vol
tage
V
GSS
±
30
V
Continuous drain
current
I
D
13
A
T
C
=25
℃
8.3
A
T
C
=100
℃
Pulsed drain cu
rrent
(1)
I
DM
39
A
Power dissi
pation
P
D
33
W
Single - pulse aval
anche energy
E
AS
284
mJ
MOSFE
T dv/dt rugg
edness
dv/dt
50
V/ns
Diode dv
/dt ruggedness
dv/dt
15
V/ns
Storage tempera
ture
T
stg
-55 ~150
℃
Maximum operatin
g junction
temperature
T
j
150
℃
1)
Pulse width t
P
limited by T
j,m
ax
2)
I
SD
≤
I
D
, V
DS peak
≤
V
(BR)DSS
Parameter
Symbol
V
alue
Unit
Thermal resistanc
e, junction-case max
R
thjc
3.
8
℃
/W
Thermal resistanc
e, junction-ambient
max
R
thja
62.5
℃
/W
Thermal Character
istics
Absolute Maximum
Rating (T
c
=25
℃
unless oth
erwise specified)
MMF
60
R2
90
P Dat
asheet
Jun.
2013
Revision 1.1
MagnaChip Semi
conductor Ltd
.
3
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Drain
–
Source
Breakdow
n voltage
V
(BR)D
SS
600
-
-
V
V
GS
= 0V
,
I
D
=0.25mA
Gate
Threshold V
oltage
V
GS
(th)
2
3
4
V
V
DS
= V
GS,
I
D
=0.25mA
Zero Gate V
oltage
Drain Current
I
D
SS
-
-
1
μ
A
V
DS
= 600V
,
V
GS
= 0V
Gate Leakage
Current
I
GSS
-
-
100
nA
V
GS
=
±3
0V
,
V
DS
=0V
Drain-Source On
State Resistance
R
DS(ON)
-
0.26
0.29
Ω
V
GS
= 10V
, I
D
=
6.
0
A
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Input Capacitance
C
iss
-
1
102
-
pF
V
DS
= 25V
, V
GS
= 0V
,
f = 1.0M
Hz
Output Capacitance
C
oss
-
858
-
Reverse
T
ransfer Capacitance
C
rss
-
50
-
Effectiv
e Output Capaci
tance
Energy Related
(3)
C
o(er)
-
33
-
V
DS
= 0V to 480V
,
V
GS
= 0V
,f = 1.0M
Hz
T
urn On
Delay
T
ime
t
d(on)
-
21
-
ns
V
GS
= 10V
,
R
G
= 25
Ω,
V
DS
= 300V
, I
D
=
13
A
Rise
T
ime
t
r
-
44
-
T
urn O
ff Delay
Time
t
d(off)
-
212
-
Fall
T
ime
t
f
-
40
-
T
otal Gate Char
ge
Q
g
-
33
-
nC
V
GS
= 10V
,
V
DS
= 480V
,
I
D
=
13
A
Gate
–
Source Cha
rge
Q
gs
-
6.5
-
Gate
–
Drain Char
ge
Q
gd
-
13.5
-
Gate Resistance
R
G
-
2.7
-
Ω
V
GS
= 0V
,
f = 1.0M
Hz
3) C
o(er)
is a capacitance that gives the same stored energy as C
OSS
while V
DS
is
rising from 0V to 80% V
(BR)DSS
Static Characterist
ics (T
c
=25
℃
unless
otherwise specified)
Dynamic Characteri
stics (T
c
=25
℃
unle
ss otherwise specif
ied)
MMF
60
R2
90
P Dat
asheet
Jun.
2013
Revision 1.1
MagnaChip Semi
conductor Ltd
.
4
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Continuous Diod
e Forward
Current
I
SD
-
-
13
A
Diode Forw
ard Voltage
V
SD
-
-
1.4
V
I
SD
=
13
A, VGS = 0 V
Reverse Recov
ery Time
t
rr
-
353
-
ns
I
SD
=
13
A
di/dt = 100 A/μs
V
DD
= 100 V
Reverse Recov
ery Charge
Q
rr
-
4.
6
-
μ
C
Reverse Recov
ery Current
I
rrm
-
26
-
A
Reverse Diode Ch
aracteristics (T
c
=25
℃
unless otherwise specified)
MMF
60
R2
90
P Dat
asheet
Jun.
2013
Revision 1.1
MagnaChip Semi
conductor Ltd
.
5
Characteristic Gra
ph
MMF
60
R2
90
P Dat
asheet
J
u
n
.
20
13
R
e
v
is
ion
1
.
1
M
a
g
n
a
C
h
ip
S
e
mi
c
o
n
d
u
c
t
o
r
L
t
d
.
6
MMF
60
R2
90
P Dat
asheet
Jun.
2013
Revision 1.1
MagnaChip Semi
conductor Ltd
.
7
MMF
60
R2
90
P Dat
asheet
Jun.
2013
Revision 1.1
MagnaChip Semi
conductor Ltd
.
8
T
est Circuit
V
DS
10V
1mA
DUT
100K
Ω
10V
Same type as DUT
+
-
V
DD
DUT
+
-
Same type as DUT
V
DS
+
-
I
S
R
g
10K
Ω
V
gs
±
15V
L
I
F
V
DD
DUT
+
-
I
D
V
DS
V
gs
t
p
R
L
V
DD
DUT
+
-
I
AS
V
DS
R
g
V
gs
t
p
L
10V
V
GS
Charge
Q
g
Q
gs
Q
gd
V
DS
V
GS
90%
10%
T
d(on)
t
r
t
on
T
d(off)
t
f
t
off
V
DD
t
p
t
AV
V
DS(t)
BV
DSS
I
AS
Rds(on) * I
AS
t
rr
t
a
t
b
I
FM
I
RM
d
i
/d
t
0.25 I
RM
0.75 I
RM
0.5 I
RM
V
R
V
RM(REC)
Fig15-1. Gate charge measurement circuit
Fig15-2. Gate charge waveform
Fig16-1. Diode reverse recovery test circuit
Fig16-1. Diode reverse recovery test waveform
Fig17-1. Switching time test circuit for resistive load
Fig17-2. Switching time waveform
Fig18-1. Unclamped inductive load test circuit
Fig18-2. Unclamped inductive waveform
R
g
25
Ω
MMF
60
R2
90
P Dat
asheet
Jun.
2013
Revision 1.1
MagnaChip Semi
conductor Ltd
.
9
Physical Dimension
3 Leads
,
TO
-220F
Dimensions are in mil
limeters unless oth
erwise specified
S
y
m
b
ol
Mi
n
N
om
Ma
x
A
4.
50
4.
93
b
0.
63
0.
91
b1
1.
15
1
.
4
7
C
0.
33
0.
63
D
15.
47
16.
13
E
9.
60
10
.
7
1
e
2.
54
F
2.
34
2.
84
G
6.
48
6.
90
L
12.
24
13.
72
L1
2.
79
3
.
6
7
Q
2.
52
2.
96
Q1
3.
10
3
.
5
0
¢R
3.
00
3
.
5
5
MMF
60
R2
90
P Dat
asheet
Jun.
2013
Revision 1.1
MagnaChip Semi
conductor Ltd
.
10
DISCLAIMER:
The
Products
are
not
designed
for
use
in
hostile
environments,
including,
without
l
imitation,
aircraft,
nuclear
power
generation,
medical
appliance
s,
and
devices
or
systems
in
which
malfunction
of
any
Product
can
reasonably
be
expected
to
result
in
a
personal
in
jury
.
Seller’s
customers
using
or
selling
Seller’s
products
for
use
in
such
applications do so at their own risk and agree to fully defend and indemnify
Seller.
MagnaC
hip
reserv
es
the right
to change the
specifications and circ
u
itry without
notice at
any time.
Ma
gnaChip does
not consider respons
ibility
for
use
of
any
circuitry
other
than
circuitry
entirely
included
in
a
M
agnaCh
ip
product.
is
a
registered
t
rade
mark
of
MagnaChip
Semiconductor
Ltd.
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