Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M MCR08B, MCR08M Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. Features * Sensitive Gate Trigger Current * Blocking Voltage to 600 V * Glass Passivated Surface for Reliability and Uniformity * Surface Mount Package * These Devices are Pb-Free and are RoHS Compliant Functional Diagram Pin Out 4 1 2 G A 3 K Additional Information Datasheet Resources Samples (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Peak Repetitive Off-State Voltage (Note 1) VDRM, (- 40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) VRRM MCR08B Unit 200 V 600 MCR08M On-State RMS Current (All Conduction Angles; TC = 80C) Value IT 0.8 A ITSM 8.0 A I 2t 0.4 Asec PGM 0.1 W PGM (AV) 0.01 W Operating Junction Temperature Range TJ -40 to +125 C Storage Temperature Range Tstg -40 to +150 C Peak Non-Repetitive Surge Current (1/2 Cycle Sine Wave, 60 Hz, TC = 25C) (RMS) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (TC = 80C, t = 1.0 s) Average Gate Power (t = 8.3 ms, TC = 80C) Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction-to-Case (AC) PCB Mounted per Figure 1 R8JC 2.2 C/W Thermal Resistance, Junction-to-Tab Measured on Anode Tab Adjacent to Epoxy R8JT 25 C/W TL 260 C Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M Electrical Characteristics - OFF (TJ = 25C unless otherwise noted ; Electricals apply in both directions) Characteristic Peak Repetitive Forward or Reverse Blocking Current (Note 3) (VAK = Rated VDRM or VRRM, RGK = 1 kQ Symbol Min Typ Max Unit TJ = 25C IDRM, - - 10 A TJ = 125C IRRM - - 200 mA Electrical Characteristics - ON (TJ = 25C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Forward On-State Voltage (Note 2) (IT = 1.0 A Peak) VTM - - 1.7 V Gate Trigger Current (Continuous dc) (Note 4) (VAK = 12 Vdc, RL = 100 ) IGT - - 200 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) IH - - 5.0 mA Holding Current (Note 3) (VAK = 12 Vdc, Initiating Current = 20 mA) VGT - - 0.8 V Turn-On Time (VAK = 12 Vdc, ITM = 5 Adc, IGT = 5 mA) tgt - 1.25 - s 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. RGK = 1000 Q is included in measurement. 4. RGK is not included in measurement. Dynamic Characteristics Characteristic Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC = 110C, RGK = 1 kQ, Exponential Method) Symbol Min Typ Max Unit dv/dt 10 - - V/s (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M Voltage Current Characteristic of SCR Symbol Parameter +C urrent VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current Anode + VTM on state VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode Holding Current IH +V oltage IDRM at VDRM Forward Blocking Region (off state) Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 0.15 3.8 0.079 2.0 0.091 0.091 2.3 2.3 0.079 2.0 0.984 25.0 0.059 0.059 1.5 1.5 0.059 1.5 0.096 2.44 0.096 2.44 0.059 1.5 0.244 6.2 inches mm 0.096 2.44 0.059 1.5 0.472 12.0 BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M Figure 3. Junction to Ambient Thermal Resistance vs Copper Tab Area Figure 2. On-State Characteristics 10 1.0 IT 0.1 0.01 TYPICAL AT TJ = 110C MAX AT TJ = 110C MAX AT TJ = 25C 0 2.03 1.0 .0 4.0 vT Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature 110 110 100 100 50 OR 60 Hz HALFWAVE 90 = CONDUCTION ANGLE 80 dc 70 180 60 120 50 = 30 40 60 30 20 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature 0 0.1 90 dc 90 180 80 120 70 = 30 60 60 50 90 40 30 = 0.2 0.4 0.3 20 0.5 CONDUCTION ANGLE 0 0.1 Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature dc 100 110 PAD AREA = 4.0 cm2, 50 OR 60 Hz HALFWAVE 90 120 = 30 60 90 0.1 IT(AV) 120 = 30 60 90 = CONDUCTION ANGLE 0 0.5 180 = CONDUCTION 50 0.4 50 OR 60 Hz HALFWAVE dc 180 60 0.3 Figure 7. Current Derating Reference: Anode Tab T(tab), MAXIMUM ALLOWABLE TAB TEMPERATURE ( C) T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 110 70 0.2 IT(AV) I 80 1.0 cm2 FOIL, 50 OR 60 Hz HALFWAVE 0.2 0.3 0.4 0.5 85 ANGLE 0 0.1 0.2 0.3 0.4 IT(AV) (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 0.5 Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M Figure 9. Thermal Response Device Mounted on Figure 1 Printed Circuit Board Figure 8. Power Dissipation MAXIMUM AVERAGE POWER P(AV),DISSIPATION (WATTS) 0.8 = 0.7 r T , TRANSIENT THERMAL RESISTANCE NORMALIZED 1.0 0.9 = 30 CONDUCTION ANGLE 0.6 60 90 0.5 0.4 dc 0.3 180 0.2 120 0.1 0 0 0.1 0.2 0.4 0.3 0.5 IT(AV) 0.1 0.01 0.0001 0.0010 .011 0.1 .0 10 100 t, TIME (SECONDS) Figure 10. Typical Gate Trigger Voltage vs Junction Temperature VGT , GATE TRIGGER VOLTAGE (VOLTS) 1.0 Figure 11. Typical Normalized Holding Current vs Junction Temperature 0.7 VAK = 12 V R L = 100 0.6 0.5 0.4 0.3 -40- 20 04 20 06 0 80 110 TJ, JUNCTION TEMPERATURE, ( C) Figure 12. Typical Range of VGT versus Measured IGT Figure 13. Typical Gate Trigger Current vs Junction Temperature V GT , GATE TRIGGER VOLTAGE (VOLTS) 0.7 0.65 0.6 0.55 0.5 VAK = 12 V R L = 100 TJ = 25C 0.45 0.4 0.35 0.3 0.1 1 .0 10 100 1000 IGT, GATE TRIGGER CURRENT ( A) (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M Figure 14. Holding Current Range vs Gate-Cathode Resistance Figure 15. Exponential Static dv/dt vs. Junction Temperature and Gate-Cathode Termination Resistance 10000 100 10 IGT = 48 A IGT = 7 A 1.0 Vpk = 400 V 1000 STATIC dv/dt (V/ S) IH , HOLDING CURRENT (mA) 5000 TJ = 25C 500 100 TJ = 25 50 10 125 5.0 50 110 1.0 75 0.5 0.1 1.0 10 1000 100 10,000 0.1 10 100,000 TJ = 110C 200 V 1000 100 V 400 V 100 STATIC dv/dt (V/ S) STATIC dv/dt (V/ S) 500 10,000 50 V 50 500 V 10 5.0 TJ = 110C 400 V (PEAK) 500 100 R GK = 100 50 10 R GK = 1.0 k 5.0 1.0 10 100 1000 10,000 R GK 1.0 0.01 R GK = 10 k 0.11 .0 10 C GK Figure 18. Exponential Static dv/dt vs Gate-Cathode Termination Resistance and Product Trigger Current Sensitivity 10000 STATIC dv/dt (V/ S) 1000 500 100 50 10 IGT = 70 A IGT = 5 A IGT = 35 A 5.0 1.0 10 100,000 10000 300 V 1000 1000 Figure 17. Exponential Static dv/dt vs Gate-Cathode Capacitance and Resistance Figure 16. Exponential Static dv/dt vs Peak Voltage and Gate-Cathode Termination Resistance 10000 100 R GK R IGT = 15 A 100 1000 10,000 100,000 (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 100 Thyristors Surface Mount - 600V - 800V > MCR08B, MCR08M Dimensions Soldering Footprint 3.8 0.15 D b1 2.0 0.079 4 HE 12 3 E 2.3 0.091 b e1 e C A 0.08 (0003) A1 2.0 0.079 L1 1.5 0.059 Dim Inches 6.3 0.248 2.3 0.091 Millimeters SCALE 6:1 mm inches Part Marking System Min Nom Max Min Nom Max A 1.50 1.63 1.75 0.060 0.064 0.068 A1 0.02 0.06 0.10 0.001 0.002 0.004 b 0.60 0.75 0.89 0.024 0.030 0.035 b1 2.90 3.06 3.20 0.115 0.121 0.126 c 0.24 0.29 0.35 0.009 0.012 0.014 D 6.30 6.50 6.70 0.249 0.256 0.263 E 3.30 3.50 3.70 0.130 0.138 0.145 e 2.20 2.30 2.40 0.087 0.091 0.094 e1 0.85 0.94 1.05 0.033 0.037 0.041 L1 1.50 1.75 2.00 0.060 0.069 0.078 HE 6.70 7.00 7.30 0.264 0.276 0.287 9 0 - 10 0 - 10 SOT 223 CASE 318E STYLE 10 1 AYW CR08x 1 CR08x =D evice Code x = B or M A= Assembly Location Y= Year W= Work Week =P b Free Package (Note: Microdot may be in either location) Pin Assignment 1 Cathode 2 Anode 3 Gate 4 Anode 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Ordering Information Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics Device Package Shipping MCR08BT1G SOT-223 (Pb-Free) 1000/Tape & Reel MCR08MT1G TO-223 (Pb-Free) 1000/Tape & Reel (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17