Freescale Semiconductor Technical Data Document Number: MML09211H Rev. 0, 7/2011 Enhancement Mode pHEMT Technology (E--pHEMT) MML09211HT1 Low Noise Amplifier The MML09211H is a single--stage Low Noise Amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (TMA) and receiver front end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 400 to 1400 MHz such as ISM, GSM, W--CDMA and LTE. 400--1400 MHz, 21.3 dB 22 dBm E--pHEMT Features * Ultra Low Noise Figure: 0.52 dB @ 900 MHz * Frequency: 400--1400 MHz * Unconditionally Stable over Temperature * High Reverse Isolation: --35 dB @ 900 MHz * P1dB: 22 dBm @ 900 MHz * Small--Signal Gain: 21.3 dB @ 900 MHz (adjustable externally) * Third Order Output Intercept Point: 32.6 dBm @ 900 MHz * Single 5 Volt Supply * Supply Current: 60 mA * 50 Ohm Operation (some external matching required) * Low Cost DFN Surface Mount Package * RoHS Compliant * In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel. Table 1. Typical Performance (1) Table 2. Maximum Ratings Symbol 400 MHz 900 MHz 1400 MHz Unit Noise Figure (2) NF 0.54 0.52 0.66 dB Input Return Loss (S11) IRL --19 --23 --17 dB Output Return Loss (S22) ORL --16 --16 --20 dB Characteristic Small--Signal Gain (S21) Symbol Value Unit Supply Voltage Rating VDD 6 V Supply Current IDD 150 mA RF Input Power Pin 20 dBm Tstg --65 to +150 C TJ 150 C Storage Temperature Range Junction Temperature Gp 26.1 21.3 18.8 dB P1dB 22 22 20 dBm Third Order Input Intercept Point IIP3 11 11.3 13.5 dBm Third Order Output Intercept Point OIP3 31.5 32.6 32.3 dBm Power Output @ 1dB Compression CASE 2132--01 DFN 2x2 PLASTIC (3) 3. For reliable operation, the junction temperature should not exceed 150C. 1. VDD = 5 Vdc, TA = 25C, 50 ohm system, application circuit tuned for specified frequency. 2. Noise Figure value calculated with connector losses removed. Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 86C, 5 Vdc, 60 mA, no RF applied Symbol Value (4) Unit RJC 37.5 C/W 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (c) Freescale Semiconductor, Inc., 2011. All rights reserved. RF Device Data Freescale Semiconductor MML09211HT1 1 Table 4. Electrical Characteristics (VDD = 5 Vdc, 900 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 19 21.3 -- dB Input Return Loss (S11) IRL -- --23 -- dB Output Return Loss (S22) ORL -- --16 -- dB Power Output @ 1dB Compression P1dB -- 22 -- dBm IIP3 -- 11.3 -- dBm Third Order Output Intercept Point OIP3 -- 32.6 -- dBm Reverse Isolation (S12) |S12| -- --35 -- dB NF -- 0.52 -- dB IDD 45 60 90 mA VDD -- 5 -- V Characteristic Third Order Input Intercept Point Noise Figure (1) Supply Current (2,3) Supply Voltage (2) 1. Noise Figure value calculated with connector losses removed. 2. For reliable operation, the junction temperature should not exceed 150C. 3. DC current measured with no RF signal applied. Table 5. Functional Pin Description Pin Number Pin Function 1 RFin RFin 1 2 RFin RFin 2 3 RF Input Matching Termination RFMATCH 3 4 Bias Voltage DC Supply VBIAS 4 5 RF Feedback 6 RFout/DC Supply 7 RFout/DC Supply 8 No Connection GND 8 N.C. 7 RFout 6 RFout 5 FB (Top View) Figure 1. Pin Connections Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22--A114) 0 (Minimum) Machine Model (per EIA/JESD 22--A115) A (Minimum) Charge Device Model (per JESD 22--C101) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 1 260 C MML09211HT1 2 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 900 MHz VDD C3 C9 C7 C4 L2 R2 RF INPUT N.C. 8 1 C1 RF OUTPUT 7 2 C2 L1 3 6 R1 C8 BIAS CIRCUIT C5 4 5 C6 Figure 2. MML09211HT1 Test Circuit Schematic Table 8. MML09211HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C6, C7 56 pF Chip Capacitors GRM1555C1H560JZ01D Murata C3 100 pF Chip Capacitor GRM1555C1H101JZ01D Murata C4 0.1 F Chip Capacitor GRM155R61A104KA01D Murata C5 180 pF Chip Capacitor GRM1555C1H181JZ01D Murata C8, C9 0.01 F Chip Capacitors GRM155R71E103KA01D Murata L1 12 nH Chip Inductor 0402CS--12NXGL Coilcraft L2 13 nH Chip Inductor 0402CS--13NXGL Coilcraft R1 81 , 1/16 W Chip Resistor RC0402JR--0782RL Yageo R2 1210 , 1/16 W Chip Resistor RC0402FR--071K21L Yageo PCB 0.010, r = 3.38, Multilayer IS680--3.38 Isola MML09211HT1 RF Device Data Freescale Semiconductor 3 50 OHM APPLICATION CIRCUIT: 900 MHz VDD Via A RFIN RFOUT C4 C3 C1 L2 L1 C6 C5 R2 C8 C2 R1 C9 C7 Via A DFN 2x2--8A Rev. 0 NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply decoupling and grounding are employed. Figure 3. MML09211HT1 Test Circuit Component Layout Table 8. MML09211HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C6, C7 56 pF Chip Capacitors GRM1555C1H560JZ01D Murata C3 100 pF Chip Capacitor GRM1555C1H101JZ01D Murata C4 0.1 F Chip Capacitor GRM155R61A104KA01D Murata C5 180 pF Chip Capacitor GRM1555C1H181JZ01D Murata C8, C9 0.01 F Chip Capacitors GRM155R71E103KA01D Murata L1 12 nH Chip Inductor 0402CS--12NXGL Coilcraft L2 13 nH Chip Inductor 0402CS--13NXGL Coilcraft R1 81 , 1/16 W Chip Resistor RC0402JR--0782RL Yageo R2 1210 , 1/16 W Chip Resistor RC0402FR--071K21L Yageo PCB 0.010, r = 3.38, Multilayer IS680--3.38 Isola (Test Circuit Component Designations and Values repeated for reference.) MML09211HT1 4 RF Device Data Freescale Semiconductor 0 --30 35 --5 --32 30 --10 --34 25 --15 S12 (dB) S11 (dB) 50 OHM TYPICAL CHARACTERISTICS: 900 MHz 85C --20 25C --25 810 870 930 85C 990 VDD = 5 Vdc --440 1050 750 810 870 930 990 1050 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 4. S11 versus Frequency versus Temperature Figure 5. S12 versus Frequency versus Temperature 28 --4 24 --7 --40C 20 --10 85C 25C 16 S22 (dB) S21 (dB) 25C --40C --425 VDD = 5 Vdc --35 750 --38 15 --40 10 --40C --30 --36 20 12 8 --13 --16 --19 4 25C --40C 85C --22 VDD = 5 Vdc 0 750 810 870 930 990 1050 VDD = 5 Vdc --25 750 810 870 930 990 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 6. S21 versus Frequency versus Temperature Figure 7. S22 versus Frequency versus Temperature 1050 MML09211HT1 RF Device Data Freescale Semiconductor 5 50 OHM TYPICAL CHARACTERISTICS: 900 MHz 25 1.4 24 23 0.8 85C 0.6 0.4 --40C 25C 0.2 0 OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) Gps, POWER GAIN (dB) 1 750 810 870 930 990 20 25C 19 85C 18 17 VDD = 5 Vdc f = 900 MHz 11 12.5 14 15.5 17 18.5 20 21.5 f, FREQUENCY (MHz) Pout, OUTPUT POWER (dBm) Figure 8. Noise Figure versus Frequency versus Temperature Figure 9. Power Gain versus Output Power versus Temperature, CW 36 34 32 30 28 26 24 VDD = 5 Vdc f = 900 MHz 1 MHz Tone Spacing 22 20 30 --40C 21 15 1050 38 18 22 16 VDD = 5 Vdc 40 50 60 70 80 90 100 IDD, CURRENT (mA) P1dB, 1 dB COMPRESSION POINT, CW (dBm) Figure 10. Third Order Output Intercept Point (Two--Tone) versus IDD Current OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) NF, NOISE FIGURE (dB) 1.2 23 35 34 --40C 33 32 25C 31 85C 30 VDD = 5 Vdc 1 MHz Tone Spacing 29 38 800 840 880 920 960 1000 f, FREQUENCY (MHz) Figure 11. Third Order Output Intercept Point (Two--Tone) versus Frequency versus Temperature 26 25 24 --40C 23 85C 22 25C 21 20 VDD = 5 Vdc 19 800 840 880 920 960 1000 f, FREQUENCY (MHz) Figure 12. P1dB versus Frequency versus Temperature, CW MML09211HT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 400 MHz VDD C3 C9 C7 C4 L2 R2 RF INPUT N.C. 8 1 C1 L3 RF OUTPUT 7 2 C2 L1 3 6 R1 C8 BIAS CIRCUIT C5 4 5 C6 Figure 13. MML09211HT1 Test Circuit Schematic Table 9. MML09211HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 100 pF Chip Capacitors GRM1555C1H101JA01D Murata C3, C5 390 pF Chip Capacitors GRM1555C1H391JA01D Murata C4 0.1 F Chip Capacitor GRM155R71C104KA88D Murata C6, C7 56 pF Chip Capacitors GRM155C1H560JA01D Murata C8, C9 0.01 F Chip Capacitors GRM155R71E103KA01D Murata L1 22 nH Chip Inductor 0402CS--22NXGL Coilcraft L2 24 nH Chip Inductor 0402CS--24NXGL Coilcraft L3 4.3 nH Chip Inductor 0402CS--4N3XGL Coilcraft R1 100 , 1/16 W Chip Resistor RC0402FR--07100RL Yageo R2 1210 , 1/16 W Chip Resistor RC0402FR--071K21L Yageo PCB 0.010, r = 3.38, Multilayer IS680--3.38 Isola MML09211HT1 RF Device Data Freescale Semiconductor 7 50 OHM APPLICATION CIRCUIT: 400 MHz VDD Via A RFIN RFOUT C4 C3 L3 C1 L2 L1 C6 C5 C2 R2 C8 R1 C9 C7 Via A DFN 2x2--8B Rev. 0 NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply decoupling and grounding are employed. Figure 14. MML09211HT1 Test Circuit Component Layout Table 9. MML09211HT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 100 pF Chip Capacitors GRM1555C1H101JA01D Murata C3, C5 390 pF Chip Capacitors GRM1555C1H391JA01D Murata C4 0.1 F Chip Capacitor GRM155R71C104KA88D Murata C6, C7 56 pF Chip Capacitors GRM155C1H560JA01D Murata C8, C9 0.01 F Chip Capacitors GRM155R71E103KA01D Murata L1 22 nH Chip Inductor 0402CS--22NXGL Coilcraft L2 24 nH Chip Inductor 0402CS--24NXGL Coilcraft L3 4.3 nH Chip Inductor 0402CS--4N3XGL Coilcraft R1 100 , 1/16 W Chip Resistor RC0402FR--07100RL Yageo R2 1210 , 1/16 W Chip Resistor RC0402FR--071K21L Yageo PCB 0.010, r = 3.38, Multilayer IS680--3.38 Isola (Test Circuit Component Designations and Values repeated for reference.) MML09211HT1 8 RF Device Data Freescale Semiconductor 0 35 --19 --8 --22 30 --16 --25 25 --24 --28 20 S12 (dB) S11 (dB) 50 OHM TYPICAL CHARACTERISTICS: 400 MHz --32 --40 --34 10 --48 --37 5 --56 250 VDD = 5 Vdc 310 370 430 490 VDD = 5 Vdc 0 --40 550 250 310 370 430 490 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 15. S11 versus Frequency Figure 16. S12 versus Frequency 29 --5 28 --10 27 --15 26 --20 S22 (dB) S21 (dB) --31 15 25 24 550 --25 --30 23 --35 VDD = 5 Vdc 22 250 310 370 430 490 VDD = 5 Vdc --40 550 250 310 370 430 490 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 17. S21 versus Frequency Figure 18. S22 versus Frequency 550 MML09211HT1 RF Device Data Freescale Semiconductor 9 1.4 NF, NOISE FIGURE (dB) 1.2 1 0.8 0.6 0.4 0.2 0 VDD = 5 Vdc 340 300 380 420 460 f, FREQUENCY (MHz) Figure 19. Noise Figure versus Frequency 500 OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 50 OHM TYPICAL CHARACTERISTICS: 400 MHz 34 33 32 31 30 29 VDD = 5 Vdc 1 MHz Tone Spacing 28 27 300 340 380 420 460 500 f, FREQUENCY (MHz) Figure 20. Third Order Output Intercept Point (Two--Tone) versus Frequency MML09211HT1 10 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 1400 MHz VDD C3 C9 C7 C4 L2 R2 RF INPUT N.C. 8 1 C1 RF OUTPUT 7 2 C2 L1 3 6 R1 C8 C5 4 BIAS CIRCUIT 5 C6 Figure 21. MML09211HT1 Test Circuit Schematic Table 10. MML09211HT1 Test Circuit Component Designations and Values C1 220 pF Chip Capacitor GRM1555C1H221JA01D Murata C2 33 pF Chip Capacitor GRM1555C1H330JA01D Murata C3 100 pF Chip Capacitor GRM1555C1H101JA01D Murata C4 0.1 F Chip Capacitor GRM155R71C104KA88D Murata C5 180 pF Chip Capacitor GRM1555C1H181JA01D Murata C6, C7 56 pF Chip Capacitors GRM155C1H560JA01D Murara C8, C9 0.01 F Chip Capacitors GRM155R71E103KA01D Murata L1 8.7 nH Chip Inductor 0402CS--8N7XGL Coilcraft L2 3.9 nH Chip Inductor 0402CS--3N9XGL Coilcraft R1 100 , 1/16 W Chip Resistor RC0402FR--07100RL Yageo R2 1210 , 1/16 W Chip Resistor RC0402FR--071K21L Yageo PCB 0.010, r = 3.38, Multilayer IS680--3.38 Isola MML09211HT1 RF Device Data Freescale Semiconductor 11 50 OHM APPLICATION CIRCUIT: 1400 MHz VDD Via A RFIN RFOUT C4 C3 C1 L2 L1 C6 C5 C8 R2 C2 R1 C9 C7 Via A DFN 2x2--8A Rev. 0 NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply decoupling and grounding are employed. Figure 22. MML09211HT1 Test Circuit Component Layout Table 10. MML09211HT1 Test Circuit Component Designations and Values C1 220 pF Chip Capacitor GRM1555C1H221JA01D Murata C2 33 pF Chip Capacitor GRM1555C1H330JA01D Murata C3 100 pF Chip Capacitor GRM1555C1H101JA01D Murata C4 0.1 F Chip Capacitor GRM155R71C104KA88D Murata C5 180 pF Chip Capacitor GRM1555C1H181JA01D Murata C6, C7 56 pF Chip Capacitors GRM155C1H560JA01D Murara C8, C9 0.01 F Chip Capacitors GRM155R71E103KA01D Murata L1 8.7 nH Chip Inductor 0402CS--8N7XGL Coilcraft L2 3.9 nH Chip Inductor 0402CS--3N9XGL Coilcraft R1 100 , 1/16 W Chip Resistor RC0402FR--07100RL Yageo R2 1210 , 1/16 W Chip Resistor RC0402FR--071K21L Yageo PCB 0.010, r = 3.38, Multilayer IS680--3.38 Isola (Test Circuit Component Designations and Values repeated for reference.) MML09211HT1 12 RF Device Data Freescale Semiconductor --10 --30 35 --12 --32 30 --14 --34 25 --16 --36 20 S12 (dB) S11 (dB) 50 OHM TYPICAL CHARACTERISTICS: 1400 MHz --18 --40 10 --20 --42 5 --22 VDD = 5 Vdc 1310 1370 1430 1490 --44 0 1250 1550 1310 1370 1430 1490 f, FREQUENCY (MHz) Figure 23. S11 versus Frequency Figure 24. S12 versus Frequency 23 --10 22 --12 21 --14 20 --16 19 18 1550 --18 --20 17 16 1250 VDD = 5 Vdc f, FREQUENCY (MHz) S22 (dB) S21 (dB) --24 1250 --38 15 --22 VDD = 5 Vdc 1310 1370 1430 1490 1550 --24 1250 VDD = 5 Vdc 1310 1370 1430 1490 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 25. S21 versus Frequency Figure 26. S22 versus Frequency 1550 MML09211HT1 RF Device Data Freescale Semiconductor 13 1.4 NF, NOISE FIGURE (dB) 1.2 1 0.8 0.6 0.4 0.2 0 VDD = 5 Vdc 1300 1340 1380 1420 1460 f, FREQUENCY (MHz) Figure 27. Noise Figure versus Frequency 1500 OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 50 OHM TYPICAL CHARACTERISTICS: 1400 MHz 35 34 33 32 31 30 VDD = 5 Vdc 1 MHz Tone Spacing 29 28 1300 1340 1380 1420 1460 1500 f, FREQUENCY (MHz) Figure 28. Third Order Output Intercept Point (Two--Tone) versus Frequency MML09211HT1 14 RF Device Data Freescale Semiconductor 2.00 0.80 0.30 0.50 1.6 x 0.8 Solder Pad with Thermal Via Structure 1.20 0.60 2.40 Figure 29. PCB Pad Layout for DFN 2x2 MA YW Figure 30. Product Marking MML09211HT1 RF Device Data Freescale Semiconductor 15 PACKAGE DIMENSIONS MML09211HT1 16 RF Device Data Freescale Semiconductor MML09211HT1 RF Device Data Freescale Semiconductor 17 MML09211HT1 18 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software * .s2p File Development Tools * Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. FAILURE ANALYSIS At this time failure analysis is limited to electrical signature analysis. For updates contact your local Freescale Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 July 2011 Description * Initial Release of Data Sheet MML09211HT1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2011. All rights reserved. MML09211HT1 Document Number: MML09211H Rev. 0, 7/2011 20 RF Device Data Freescale Semiconductor