MML09211HT1
1
RF Device Data
Freescale Semiconductor
Enhancement Mode pHEMT
Technology (E--pHEMT)
Low Noise Amplifier
The MML09211H is a single--stage Low Noise Amplifier (LNA) with active
bias and high isolation for use in cellular infrastructure applications. It is
designed for a range of low noise, high linearity applications such as pico cell,
femto cell, tower mounted amplifiers (TMA) and receiver front end circuits. It
operates from a single voltage supply and is suitable for applications with
frequencies from 400 to 1400 MHz such as ISM, GSM, W--CDMA and LTE.
Features
!Ultra Low Noise Figure: 0.52 dB @ 900 MHz
!Frequency: 400--1400 MHz
!Unconditionally Stable over Temperature
!High Reverse Isolation: --35 dB @ 900 MHz
!P1dB: 22 dBm @ 900 MHz
!Small--Signal Gain: 21.3 dB @ 900 MHz (adjustable externally)
!Third Order Output Intercept Point: 32.6 dBm @ 900 MHz
!Single 5 Volt Supply
!Supply Current: 60 mA
!50 Ohm Operation (some external matching required)
!Low Cost DFN Surface Mount Package
!RoHS Compliant
!In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.
400--1400 MHz, 21.3 dB
22 dBm
E--pHEMT
MML09211HT1
CASE 2132--01
DFN 2x2
PLASTIC
Table 1. Typical Performance (1)
Characteristic Symbol
400
MHz
900
MHz
1400
MHz Unit
Noise Figure (2) NF 0.54 0.52 0.66 dB
Input Return Loss
(S11)
IRL -- 1 9 -- 2 3 -- 1 7 dB
Output Return Loss
(S22)
ORL -- 1 6 -- 1 6 -- 2 0 dB
Small--Signal Gain
(S21)
Gp26.1 21.3 18.8 dB
Power Output @
1dB Compression
P1dB 22 22 20 dBm
Third Order Input
Intercept Point
IIP3 11 11.3 13.5 dBm
Third Order Output
Intercept Point
OIP3 31.5 32.6 32.3 dBm
1. VDD =5Vdc,T
A=25"C, 50 ohm system, application circuit
tuned for specified frequency.
2. Noise Figure value calculated with connector losses removed.
Table 2. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage VDD 6 V
Supply Current IDD 150 mA
RF Input Power Pin 20 dBm
Storage Temperature Range Tstg --65 to +150 "C
Junction Temperature (3) TJ150 "C
3. For reliable operation, the junction temperature should not
exceed 150"C.
Table 3. Thermal Characteristics
Characteristic Symbol Value (4) Unit
Thermal Resistance, Junction to Case
Case Temperature 86"C, 5 Vdc, 60 mA, no RF applied
R#JC 37.5 "C/W
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor
Technical Data
Document Number: MML09211H
Rev. 0, 7/2011
$Freescale Semiconductor, Inc., 2011.
A
ll rights reserved.
Figure 1. Pin Connections
(Top View)
RFout
RFin
18
27
36
RFout
4 5
RFin
RFMATCH
VBIAS
N.C.
FB
GND
2
RF Device Data
Freescale Semiconductor
MML09211HT1
Table 4. Electrical Characteristics (VDD = 5 Vdc, 900 MHz, TA=25"C, 50 ohm system, in Freescale Application Circuit)
Characteristic Symbol Min Typ Max Unit
Small--Signal Gain (S21) Gp19 21.3 —dB
Input Return Loss (S11) IRL — -- 2 3 —dB
Output Return Loss (S22) ORL —-- 1 6 —dB
Power Output @ 1dB Compression P1dB —22 —dBm
Third Order Input Intercept Point IIP3 —11.3 —dBm
Third Order Output Intercept Point OIP3 —32.6 —dBm
Reverse Isolation (S12) |S12| —-- 3 5 —dB
Noise Figure (1) NF —0.52 —dB
Supply Current (2,3) IDD 45 60 90 mA
Supply Voltage (2) VDD — 5 — V
1. Noise Figure value calculated with connector losses removed.
2. For reliable operation, the junction temperature should not exceed 150"C.
3. DC current measured with no RF signal applied.
Table 5. Functional Pin Description
Pin
Number Pin Function
1RFin
2RFin
3RF Input Matching Termination
4Bias Voltage DC Supply
5RF Feedback
6RFout/DC Supply
7RFout/DC Supply
8 No Connection
Table 6. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD 22--A114) 0 (Minimum)
Machine Model (per EIA/JESD 22--A115) A (Minimum)
Charge Device Model (per JESD 22--C101) IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 1260 "C
MML09211HT1
3
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 900 MHz
RF
INPUT
Figure 2. MML09211HT1 Test Circuit Schematic
BIAS
CIRCUIT
C1
C9
L1
VDD
RF
OUTPUT
1
2
3
8
6
4 5
C7
R2
C5C8 C6
R1
L2
N.C.
C3 C4
7
C2
Table 8. MML09211HT1 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C6, C7 56 pF Chip Capacitors GRM1555C1H560JZ01D Murata
C3 100 pF Chip Capacitor GRM1555C1H101JZ01D Murata
C4 0.1 %F Chip Capacitor GRM155R61A104KA01D Murata
C5 180 pF Chip Capacitor GRM1555C1H181JZ01D Murata
C8, C9 0.01 %F Chip Capacitors GRM155R71E103KA01D Murata
L1 12 nH Chip Inductor 0402CS--12NXGL Coilcraft
L2 13 nH Chip Inductor 0402CS--13NXGL Coilcraft
R1 81 &, 1/16 W Chip Resistor RC0402JR--0782RL Yageo
R2 1210 &, 1/16 W Chip Resistor RC0402FR--071K21L Yageo
PCB 0.010',(r= 3.38, Multilayer IS680--3.38 Isola
4
RF Device Data
Freescale Semiconductor
MML09211HT1
50 OHM APPLICATION CIRCUIT: 900 MHz
NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply
decoupling and grounding are employed.
Figure 3. MML09211HT1 Test Circuit Component Layout
C4
VDD
C3
C2
C6
L2
L1
C1
C5
C8
C9
C7
R1
R2
RFIN RFOUT
DFN 2x2--8A
Rev. 0
Via A
Via A
Table 8. MML09211HT1 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C6, C7 56 pF Chip Capacitors GRM1555C1H560JZ01D Murata
C3 100 pF Chip Capacitor GRM1555C1H101JZ01D Murata
C4 0.1 %F Chip Capacitor GRM155R61A104KA01D Murata
C5 180 pF Chip Capacitor GRM1555C1H181JZ01D Murata
C8, C9 0.01 %F Chip Capacitors GRM155R71E103KA01D Murata
L1 12 nH Chip Inductor 0402CS--12NXGL Coilcraft
L2 13 nH Chip Inductor 0402CS--13NXGL Coilcraft
R1 81 &, 1/16 W Chip Resistor RC0402JR--0782RL Yageo
R2 1210 &, 1/16 W Chip Resistor RC0402FR--071K21L Yageo
PCB 0.010',(r= 3.38, Multilayer IS680--3.38 Isola
(Test Circuit Component Designations and Values repeated for reference.)
MML09211HT1
5
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
-- 4 0 "C
25"C
85"C
VDD =5Vdc
Figure 4. S11 versus Frequency versus
Temperature
1050
-- 3 5
0
750
f, FREQUENCY (MHz)
810
-- 5
-- 1 0
-- 1 5
-- 2 0
-- 2 5
-- 3 0
S11 (dB)
870 930 990
Figure 5. S12 versus Frequency versus
Temperature
0
35
f, FREQUENCY (MHz)
30
25
20
10
5
S12 (dB)
-- 4 0 "C25"C
85"C
15
Figure 6. S21 versus Frequency versus
Temperature
0
28
f, FREQUENCY (MHz)
24
20
16
8
4
S21 (dB)
-- 4 0 "C
25"C
85"C
12
Figure 7. S22 versus Frequency versus
Temperature
-- 2 5
-- 4
f, FREQUENCY (MHz)
-- 7
-- 1 0
-- 1 3
-- 1 6
-- 1 9
-- 2 2
S22 (dB)
-- 4 0 "C
25"C
85"C
1050750 810 870 930 990
1050750 810 870 930 990 1050750 810 870 930 990
VDD =5Vdc
VDD =5Vdc VDD =5Vdc
-- 4 4
-- 3 0
-- 3 2
-- 3 4
-- 3 6
-- 3 8
-- 4 0
-- 4 2
6
RF Device Data
Freescale Semiconductor
MML09211HT1
50 OHM TYPICAL CHARACTERISTICS: 900 MHz
Figure 8. Noise Figure versus Frequency
versus Temperature
f, FREQUENCY (MHz)
1.4
0.4
0.8
NF, NOISE FIGURE (dB)
1.2
0.6
0.2
1
25"C
85"C
-- 4 0 "C
VDD =5Vdc
0
750 810 870 930 990 1050
Figure 9. Power Gain versus Output Power
versus Temperature, CW
Pout, OUTPUT POWER (dBm)
17
Gps, POWER GAIN (dB)
11 2314 20
-- 4 0 "C
85"C
25"C
VDD =5Vdc
f = 900 MHz
Figure 10. Third Order Output Intercept Point
(Two--Tone) versus IDD Current
IDD, CURRENT (mA)
36
32
20
80
26
24
30 40
18
30
50 60 70 10090
38
VDD =5Vdc
f = 900 MHz
1 MHz Tone Spacing
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
Figure 11. Third Order Output Intercept Point
(Two--Tone) versus Frequency versus Temperature
f, FREQUENCY (MHz)
35
30
32
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
34
31
29
33
25"C
85"C
-- 4 0 "C
VDD =5Vdc
1 MHz Tone Spacing
38
800 840 880 920 960 1000
Figure 12. P1dB versus Frequency versus
Temperature, CW
f, FREQUENCY (MHz)
25
24
23
20
22
19
21
-- 4 0 "C
25"C
85"C
26
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
VDD =5Vdc
800 840 880 920 960 1000
12.5 15.5 18.5 21.5
34
28
22
24
23
22
16
19
21
17
18
15
20
25
MML09211HT1
7
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 400 MHz
RF
INPUT
Figure 13. MML09211HT1 Test Circuit Schematic
BIAS
CIRCUIT
C1
C9
L1
VDD
RF
OUTPUT
1
2
3
8
6
4 5
C7
R2
C5C8 C6
R1
L2
N.C.
C3 C4
L3
7
C2
Table 9. MML09211HT1 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2 100 pF Chip Capacitors GRM1555C1H101JA01D Murata
C3, C5 390 pF Chip Capacitors GRM1555C1H391JA01D Murata
C4 0.1 %F Chip Capacitor GRM155R71C104KA88D Murata
C6, C7 56 pF Chip Capacitors GRM155C1H560JA01D Murata
C8, C9 0.01 %F Chip Capacitors GRM155R71E103KA01D Murata
L1 22 nH Chip Inductor 0402CS--22NXGL Coilcraft
L2 24 nH Chip Inductor 0402CS--24NXGL Coilcraft
L3 4.3 nH Chip Inductor 0402CS--4N3XGL Coilcraft
R1 100 &, 1/16 W Chip Resistor RC0402FR--07100RL Yageo
R2 1210 &, 1/16 W Chip Resistor RC0402FR--071K21L Yageo
PCB 0.010',(r= 3.38, Multilayer IS680--3.38 Isola
8
RF Device Data
Freescale Semiconductor
MML09211HT1
50 OHM APPLICATION CIRCUIT: 400 MHz
NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply
decoupling and grounding are employed.
Figure 14. MML09211HT1 Test Circuit Component Layout
DFN 2x2--8B
Rev. 0
VDD
L3
RFIN RFOUT
C1 L1
C5
C8
C9
C7
R2
R1
C2
L2
C4
C3
C6
Via A
Via A
Table 9. MML09211HT1 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2 100 pF Chip Capacitors GRM1555C1H101JA01D Murata
C3, C5 390 pF Chip Capacitors GRM1555C1H391JA01D Murata
C4 0.1 %F Chip Capacitor GRM155R71C104KA88D Murata
C6, C7 56 pF Chip Capacitors GRM155C1H560JA01D Murata
C8, C9 0.01 %F Chip Capacitors GRM155R71E103KA01D Murata
L1 22 nH Chip Inductor 0402CS--22NXGL Coilcraft
L2 24 nH Chip Inductor 0402CS--24NXGL Coilcraft
L3 4.3 nH Chip Inductor 0402CS--4N3XGL Coilcraft
R1 100 &, 1/16 W Chip Resistor RC0402FR--07100RL Yageo
R2 1210 &, 1/16 W Chip Resistor RC0402FR--071K21L Yageo
PCB 0.010',(r= 3.38, Multilayer IS680--3.38 Isola
(Test Circuit Component Designations and Values repeated for reference.)
MML09211HT1
9
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS: 400 MHz
Figure 15. S11 versus Frequency
550
-- 5 6
0
250
f, FREQUENCY (MHz)
310
-- 8
-- 1 6
-- 2 4
-- 3 2
-- 4 0
-- 4 8
S11 (dB)
370 430 490
VDD =5Vdc
Figure 16. S12 versus Frequency
0
35
f, FREQUENCY (MHz)
30
25
20
10
5
S12 (dB)
15
VDD =5Vdc
Figure 17. S21 versus Frequency
22
29
f, FREQUENCY (MHz)
28
27
26
24
23
S21 (dB)
25
VDD =5Vdc
Figure 18. S22 versus Frequency
-- 4 0
-- 5
f, FREQUENCY (MHz)
-- 1 0
-- 1 5
-- 2 0
-- 2 5
-- 3 0
-- 3 5
S22 (dB)
VDD =5Vdc
550250 310 370 430 490
550250 310 370 430 490 550250 310 370 430 490
-- 4 0
-- 1 9
-- 2 2
-- 2 5
-- 2 8
-- 3 1
-- 3 4
-- 3 7
10
RF Device Data
Freescale Semiconductor
MML09211HT1
50 OHM TYPICAL CHARACTERISTICS: 400 MHz
Figure 19. Noise Figure versus Frequency
f, FREQUENCY (MHz)
1.4
0.4
0.8
NF, NOISE FIGURE (dB)
1.2
300
0.6
0.2
1
VDD =5Vdc
0
340 380 420 460 500
Figure 20. Third Order Output Intercept Point
(Two--Tone) versus Frequency
f, FREQUENCY (MHz)
34
29
31
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
33
300
30
28
32
27
340 380 420 460 500
VDD =5Vdc
1 MHz Tone Spacing
MML09211HT1
11
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 1400 MHz
RF
INPUT
Figure 21. MML09211HT1 Test Circuit Schematic
BIAS
CIRCUIT
C1
C9
L1
VDD
RF
OUTPUT
1
2
3
8
6
4 5
C7
R2
C5C8 C6
R1
L2
N.C.
C3 C4
7
C2
Table 10. MML09211HT1 Test Circuit Component Designations and Values
C1 220 pF Chip Capacitor GRM1555C1H221JA01D Murata
C2 33 pF Chip Capacitor GRM1555C1H330JA01D Murata
C3 100 pF Chip Capacitor GRM1555C1H101JA01D Murata
C4 0.1 %F Chip Capacitor GRM155R71C104KA88D Murata
C5 180 pF Chip Capacitor GRM1555C1H181JA01D Murata
C6, C7 56 pF Chip Capacitors GRM155C1H560JA01D Murara
C8, C9 0.01 %F Chip Capacitors GRM155R71E103KA01D Murata
L1 8.7 nH Chip Inductor 0402CS--8N7XGL Coilcraft
L2 3.9 nH Chip Inductor 0402CS--3N9XGL Coilcraft
R1 100 &, 1/16 W Chip Resistor RC0402FR--07100RL Yageo
R2 1210 &, 1/16 W Chip Resistor RC0402FR--071K21L Yageo
PCB 0.010',(r= 3.38, Multilayer IS680--3.38 Isola
12
RF Device Data
Freescale Semiconductor
MML09211HT1
50 OHM APPLICATION CIRCUIT: 1400 MHz
NOTE: To achieve optimal noise performance, it is critical that proper biasing, input matching, supply
decoupling and grounding are employed.
Figure 22. MML09211HT1 Test Circuit Component Layout
DFN 2x2--8A
Rev. 0
VDD
RFIN RFOUT
C1
L1
C5
C8
C9
C7
R2
R1
C2
L2
C4
C3
C6
Via A
Via A
Table 10. MML09211HT1 Test Circuit Component Designations and Values
C1 220 pF Chip Capacitor GRM1555C1H221JA01D Murata
C2 33 pF Chip Capacitor GRM1555C1H330JA01D Murata
C3 100 pF Chip Capacitor GRM1555C1H101JA01D Murata
C4 0.1 %F Chip Capacitor GRM155R71C104KA88D Murata
C5 180 pF Chip Capacitor GRM1555C1H181JA01D Murata
C6, C7 56 pF Chip Capacitors GRM155C1H560JA01D Murara
C8, C9 0.01 %F Chip Capacitors GRM155R71E103KA01D Murata
L1 8.7 nH Chip Inductor 0402CS--8N7XGL Coilcraft
L2 3.9 nH Chip Inductor 0402CS--3N9XGL Coilcraft
R1 100 &, 1/16 W Chip Resistor RC0402FR--07100RL Yageo
R2 1210 &, 1/16 W Chip Resistor RC0402FR--071K21L Yageo
PCB 0.010',(r= 3.38, Multilayer IS680--3.38 Isola
(Test Circuit Component Designations and Values repeated for reference.)
MML09211HT1
13
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS: 1400 MHz
Figure 23. S11 versus Frequency
1550
-- 2 4
-- 1 0
1250
f, FREQUENCY (MHz)
1310
-- 1 2
-- 1 4
-- 1 6
-- 1 8
-- 2 0
-- 2 2
S11 (dB)
1370 1430 1490
Figure 24. S12 versus Frequency
0
35
f, FREQUENCY (MHz)
30
25
20
10
5
S12 (dB)
15
VDD =5Vdc
Figure 25. S21 versus Frequency
16
23
f, FREQUENCY (MHz)
22
21
20
18
17
S21 (dB)
19
VDD =5Vdc
Figure 26. S22 versus Frequency
-- 2 4
-- 1 0
f, FREQUENCY (MHz)
-- 1 2
-- 1 4
-- 1 6
-- 1 8
-- 2 0
-- 2 2
S22 (dB)
VDD =5Vdc
15501250 1310 1370 1430 1490
15501250 1310 1370 1430 1490 155
0
1250 1310 1370 1430 1490
-- 4 4
-- 3 0
-- 3 2
-- 3 4
-- 3 6
-- 3 8
-- 4 0
-- 4 2
VDD =5Vdc
14
RF Device Data
Freescale Semiconductor
MML09211HT1
50 OHM TYPICAL CHARACTERISTICS: 1400 MHz
Figure 27. Noise Figure versus Frequency
f, FREQUENCY (MHz)
1.4
0.4
0.8
NF, NOISE FIGURE (dB)
1.2
1300
0.6
0.2
1
VDD =5Vdc
0
1340 1380 1420 1460 1500
Figure 28. Third Order Output Intercept Point
(Two--Tone) versus Frequency
f, FREQUENCY (MHz)
35
30
32
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
34
31
29
33
28
1300 1340 1380 1420 1460 1500
VDD =5Vdc
1 MHz Tone Spacing
MML09211HT1
15
RF Device Data
Freescale Semiconductor
0.30
0.50
2.40
1.20 0.60
2.00
0.80
1.6 x 0.8 Solder Pad
with Thermal Via
Structure
Figure 29. PCB Pad Layout for DFN 2x2
Figure 30. Product Marking
MA
YW
16
RF Device Data
Freescale Semiconductor
MML09211HT1
PACKAGE DIMENSIONS
MML09211HT1
17
RF Device Data
Freescale Semiconductor
18
RF Device Data
Freescale Semiconductor
MML09211HT1
MML09211HT1
19
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
!AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
!.s2p File
Development Tools
!Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time failure analysis is limited to electrical signature analysis. For updates contact your local Freescale Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0July 2011 !Initial Release of Data Sheet
20
RF Device Data
Freescale Semiconductor
MML09211HT1
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Document Number: MML09211H
Rev. 0, 7/2011
