To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA895TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES * Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz * Built-in 2 transistors (2 x 2SC5800) * 6-pin lead-less minimold (M16, 1208 package) BUILT-IN TRANSISTORS Q1, Q2 3-pin thin-type ultra super minimold part No. 2SC5800 ORDERING INFORMATION Part Number Quantity Supplying Form PA895TD 50 pcs (Non reel) * 8 mm wide embossed taping PA895TD-T3 10 kpcs/reel * Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10152EJ02V0DS (2nd edition) Date Published April 2003 CP(K) Printed in Japan The mark * shows major revised points. NEC Compound Semiconductor Devices 2002, 2003 PA895TD ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 5.5 V Emitter to Base Voltage VEBO 1.5 V IC 100 mA 190 in 1 element mW Collector Current Ptot Total Power Dissipation Note 210 in 2 elements Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C 2 Note Mounted on 1.08 cm x 1.0 mm (t) glass epoxy PCB ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA - - 600 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA - - 600 nA VCE = 1 V, IC = 5 mA 100 120 145 - hFE DC Current Gain Note 1 Gain Bandwidth Product (1) fT VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.5 - GHz Gain Bandwidth Product (2) fT VCE = 1 V, IC = 15 mA, f = 2 GHz 5.0 6.5 - GHz Insertion Power Gain (1) S21e VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.0 - dB Insertion Power Gain (2) S21e VCE = 1 V, IC = 15 mA, f = 2 GHz 4.5 5.5 - dB NF VCE = 1 V, IC = 10 mA, f = 2 GHz, ZS = Zopt - 1.9 2.5 dB VCB = 0.5 V, IE = 0 mA, f = 1 MHz - 0.6 0.8 pF 2 2 Noise Figure Reverse Transfer Capacitance Cre Note 2 Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION 2 Rank FB Marking kP hFE Value 100 to 145 Data Sheet PU10152EJ02V0DS PA895TD TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) 300 Mounted on Glass Epoxy PCB (1.08 cm2 x 1.0 mm (t) ) 250 2 Elements in total 210 200 190 150 Per Element 100 50 0 50 75 100 125 f = 1 MHz 0.8 0.6 0.4 0.2 2 4 6 8 Ambient Temperature TA (C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V 10 1 0.1 0.01 0.001 0.0001 0.4 1.0 0 150 Collector Current IC (mA) Collector Current IC (mA) 100 25 Reverse Transfer Capacitance Cre (pF) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.5 0.6 0.7 0.8 0.9 1.0 10 VCE = 2 V 10 1 0.1 0.01 0.001 0.0001 0.4 Base to Emitter Voltage VBE (V) 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current IC (mA) 60 400 A 360 A 320 A 50 280 A 40 240 A 200 A 30 160 A 20 120 A 80 A 10 0 1 2 3 4 5 IB = 40 A 6 7 Collector to Emitter Voltage VCE (V) Data Sheet PU10152EJ02V0DS 3 PA895TD DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 100 10 0.1 VCE = 2 V DC Current Gain hFE DC Current Gain hFE VCE = 1 V 1 10 100 100 10 0.1 Collector Current IC (mA) 4 1 10 Collector Current IC (mA) Data Sheet PU10152EJ02V0DS 100 PA895TD GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 Gain Bandwidth Product fT (GHz) VCE = 1 V f = 2 GHz 8 6 4 2 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 10 4 2 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 1 V IC = 5 mA 25 MSG MAG 15 10 5 |S21e|2 0 0.1 1 10 35 VCE = 2 V IC = 5 mA 30 25 MSG 20 MAG 15 10 5 |S21e|2 0 0.1 1 10 Frequency f (GHz) Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 VCE = 1 V IC = 15 mA 30 MSG MAG 20 15 10 |S21e|2 5 0 0.1 6 Collector Current IC (mA) 30 25 8 Collector Current IC (mA) 35 20 VCE = 2 V f = 2 GHz 0 1 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 0 1 1 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Gain Bandwidth Product fT (GHz) 10 Frequency f (GHz) 35 VCE = 2 V IC = 15 mA 30 25 MSG MAG 20 15 10 |S21e|2 5 0 0.1 1 10 Frequency f (GHz) Data Sheet PU10152EJ02V0DS 5 PA895TD MSG MAG 15 |S21e|2 10 5 0 1 15 10 100 20 MSG MAG 15 |S21e|2 10 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT VCE = 1 V f = 2 GHz MAG |S21e|2 5 0 1 10 100 15 VCE = 2 V f = 2 GHz MAG 10 |S21e|2 5 0 -5 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 15 VCE = 1 V f = 4 GHz 10 MSG MAG 5 0 |S21e|2 -5 -10 1 10 100 10 VCE = 2 V f = 4 GHz MSG MAG 5 |S21e|2 0 -5 -10 1 10 Collector Current IC (mA) Collector Current IC (mA) 6 VCE = 2 V f = 1 GHz Collector Current IC (mA) 10 -5 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 1 V f = 1 GHz Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 20 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Data Sheet PU10152EJ02V0DS 100 PA895TD NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 12 3 9 2 6 1 3 NF 1 2 6 0 3 NF 1 0 100 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 18 15 Ga 4 12 3 9 2 6 NF 1 3 15 Ga 4 12 3 9 2 6 NF 1 0 0 100 10 18 VCE = 2 V f = 1.5 GHz 5 Noise Figure NF (dB) VCE = 1 V f = 1.5 GHz Associated Gain Ga (dB) 1 3 0 100 10 Collector Current IC (mA) Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 5 15 12 4 Ga 9 3 2 NF 6 3 1 1 10 18 6 18 VCE = 1 V f = 2 GHz 0 100 VCE = 2 V f = 2 GHz 5 Noise Figure NF (dB) Noise Figure NF (dB) 9 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 1 Noise Figure NF (dB) 3 Collector Current IC (mA) 5 0 12 Collector Current IC (mA) 6 0 15 4 1 0 100 10 Ga 15 12 4 Ga 9 3 2 NF 6 3 1 0 Associated Gain Ga (dB) 4 18 VCE = 2 V f = 1 GHz 5 Noise Figure NF (dB) 15 Associated Gain Ga (dB) Ga Associated Gain Ga (dB) Noise Figure NF (dB) 5 0 6 18 VCE = 1 V f = 1 GHz Associated Gain Ga (dB) 6 1 Collector Current IC (mA) 10 Associated Gain Ga (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10152EJ02V0DS 7 PA895TD S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.csd-nec.com/ 8 Data Sheet PU10152EJ02V0DS PA895TD PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) (UNIT: mm) 1.00.05 3 0.150.05 C1 1 Q1 6 B1 5 6 (Top View) E1 4 2 0.4 0.4 0.8 kP C2 2 3 5 Q2 4 E2 B2 0.125+0.1 -0.05 PIN CONNECTIONS 0.50.05 1.2+0.07 -0.05 1 0.8+0.07 -0.05 Data Sheet PU10152EJ02V0DS 1. 2. 3. 4. 5. 6. Collector (Q1) Emitter (Q1) Collector (Q2) Base (Q2) Emitter (Q2) Base (Q1) 9 PA895TD * The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 10 Data Sheet PU10152EJ02V0DS PA895TD For further information, please contact NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 E-mail: ncsd-hk@elhk.nec.com.hk TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0302-1