DMS2220LFDB
Document number: DS31546 Rev. 7 - 2 1 of 7
www.diodes.com July 2009
© Diodes Incorporated
DMS2220LFDB
SBR is a registered trademark of Diod es Incorporated.
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR®
SUPER BARRIER RECTIFIER
Features
• Low On-Resistance
• 95mΩ @VGS = -4.5V
• 120mΩ @VGS = -2.5V
• 86mΩ (typ) @VGS = -1.8V
• Low Gate Threshold Voltage, -1.3V Max
• Fast Switching Speed
• Low Input/Output Leakage
• Incorporates Low VF Super Barrier Rectifier (SBR®)
• Low Profile, 0.5mm Max Height
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: DFN2020B-6
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Marking Information: See Page 6
• Ordering Information: See Page 6
• Weight: 0.0065 grams (approximate)
Maximum Ratings – TOTAL DEVICE @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 1) PD 1.4 W
Thermal Resistance, Junction to Ambient R
θ
JA 89 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Maximum Ratings – P-CHANNEL MOSFET – Q1 @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±12 V
Drain Current (Note 1) ID -3.5 A
Pulsed Drain Current (Note 4) IDM -12 A
Maximum Ratings – SBR® – D1 @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 35 V
RMS Reverse Voltage VR
(
RMS
)
25 V
Average Rectified Output Current IO 1 A
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load IFSM 3 A
Notes: 1. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
DFN2020B-6
BOTTOM VIEW Internal Schematic
TOP VIEW
123
456
ANCD
S
G
K
Q1 D1
BOTTOM VIEW
Pin Configuration
A
NC
D
S
GK
KD
DMS2220LFDB
Document number: DS31546 Rev. 7 - 2 2 of 7
www.diodes.com July 2009
© Diodes Incorporated
DMS2220LFDB
SBR is a registered trademark of Diod es Incorporated.
Electrical Characteristics – P-CHANNEL MOSFET – Q1 @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 μA VDS = -20V, VGS = 0V
Gate-Source Leakage IGSS ⎯
⎯ ⎯
⎯ ±100
±800 nA VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS
(
th
)
-0.45 ⎯ -1.3 V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance RDS (ON) ⎯
⎯
⎯
60
74
86
95
120
⎯ mΩ VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.0A
Forward Transfer Admittance |Yfs| ⎯ 8 ⎯ S VDS = -5V, ID = -2.8A
Diode Forward Voltage (Note 5) VSD ⎯ 0.7 -1.2 V VGS = 0V, IS = -1.6A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 632 ⎯ pF VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ⎯ 65 ⎯ pF
Reverse Transfer Capacitance Crss ⎯ 54 ⎯ pF
Electrical Characteristics – SBR® – D1 @ TA = 25ºC unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5) V
(
BR
)
R 35 40 ⎯ V IR = 1mA
Forward Voltage VF ⎯
⎯ 354
415 0.42
0.49 V IF = 0.5A
IF = 1.0A
Reverse Current (Note 5) IR ⎯ ⎯ 100 μA VR = 20V
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Q1, P-CHANNEL MOSFET
01 2 3 45
Fig . 1 Typica l O ut put Charact er i st ics
-V , DRAIN-SOURCE VOLTAGE (V)
DS
0
2
4
6
8
10
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = -1.5V
GS
V = -2.0V
GS
V = -2.5V
GS
V = -4.5V
GS
V = -8.0V
GS
V = -1.0V
GS
V = -1.2V
GS
0.5 1 1.5 2
0
2
4
6
8
10
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
Fig. 2 Typical Transfer Characteristics
-V , GATE SOURCE VOLTAGE (V)
GS
V = -5V
DS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
T = 125°C
A
DMS2220LFDB
Document number: DS31546 Rev. 7 - 2 3 of 7
www.diodes.com July 2009
© Diodes Incorporated
DMS2220LFDB
SBR is a registered trademark of Diod es Incorporated.
Q1, P-CHANNEL MOSFET - Continued
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
012345678
Fig. 3 Typical On-Resistance
vs . Dr ai n Cu rrent and Gate Voltage
-I , DRAIN CURRENT (A)
D
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
V = -2.5V
GS
V = -4.5V
GS
V = -1.8V
GS
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
012345678
-I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs . Dr ai n Cu rrent and Tem per ature
D
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 5 On-Resistance V ariation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = -4.5V
I = -5A
GS
D
V = -2.5V
I = -2A
GS
D
0.03
0.05
0.07
0.09
0.11
Fig. 6 On-Resistance V ariation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
V = -4.5V
I = -5A
GS
D
V = -2.5V
I = -2A
GS
D
10
100
1,000
10,000
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
048121620
Fig. 7 Typical Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
f = 1MHz
C
iss
C
oss
C
rss
Fig. 8 Gate Threshold V ariation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-V ,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
I = -250µA
D
I = -1mA
D
DMS2220LFDB
Document number: DS31546 Rev. 7 - 2 4 of 7
www.diodes.com July 2009
© Diodes Incorporated
DMS2220LFDB
SBR is a registered trademark of Diod es Incorporated.
Q1, P-CHANNEL MOSFET - Continued
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
-V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 9 Diode Forward Voltage vs. Current
0
2
4
6
8
10
-I , S
O
U
R
C
E
C
U
R
R
E
N
T
(A )
S
T = 25°C
A
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 146°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = 0.9
Fig. 10 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
DMS2220LFDB
Document number: DS31546 Rev. 7 - 2 5 of 7
www.diodes.com July 2009
© Diodes Incorporated
DMS2220LFDB
SBR is a registered trademark of Diod es Incorporated.
D1, SBR®
Fig. 11 Forward Power Dissipation
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 0.5 1 1.5
I , AVERAGE FORWARD CURRENT (A)
F(AV)
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(W)
D
Fig. 12 Typical Forward Characteristics
0.0001
0.001
0.01
0.1
1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
T = 125°C
A
0.8
V , INST ANTANEOUS FORWARD VOL TAGE (V)
F
I , INSTANTANEOUS FORWARD CURRENT (A)
F
Fig. 13 Typical Reverse Characteristics
0.01
0.1
1
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V , INSTANT ANEOUS REVERSE VOL TAGE (V)
R
I , INSTANTANEOUS REVERSE CURRENT(uA)
R
T = 25°C
A
T = 85°C
A
T = 150°C
A
T = 125°C
A
Fig. 14 Total Capacitance vs. Reverse V oltage
V , DC REVERSE VOLTAGE (V)
R
1
10
100
1,000
10,000
0.1 1 10 100
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
f = 1MHz
Fig. 15 Forward Current Derating Curve
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25 50 75 100 125 150 175
T , AMBIENT TEMPERA TURE (°C)
A
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Note 2
Fig. 16 Operating Temperature Derating
0
25
50
75
100
125
150
010203040
V , DC REVERSE VOLTAGE (V)
R
T , DERATED AMBIENT TEMPERATURE (°C)
A
DMS2220LFDB
Document number: DS31546 Rev. 7 - 2 6 of 7
www.diodes.com July 2009
© Diodes Incorporated
DMS2220LFDB
SBR is a registered trademark of Diod es Incorporated.
Ordering Information (Note 6)
Part Number Case Packaging
DMS2220LFDB-7 DFN2020B-6 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Package Outline Dimensions
Suggested Pad Layout
DFN2020B-6
Dim Min Max Typ
A 0.545 0.605 0.575
A1 0 0.05 0.02
A3 ⎯ ⎯ 0.13
b 0.20 0.30 0.25
D 1.95 2.075 2.00
d ⎯ ⎯ 0.45
D2 0.50 0.70 0.60
e ⎯ ⎯ 0.65
E 1.95 2.075 2.00
E2 0.90 1.10 1.00
f ⎯ ⎯ 0.15
L 0.25 0.35 0.30
z ⎯ ⎯ 0.225
All Dimensions in mm
Dimensions Value (in mm)
Z 1.67
G 0.20
G1 0.40
X1 1.0
X2 0.45
Y 0.37
Y1 0.70
C 0.65
ME = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Dot denotes Pin 1
SEATING PLANE
D
e
Pin#1 I D
L
b
D2
E2
E
A1
AA3
f
z
f
d
G
G
YC
ZY1
X2
X1
G1
ME
YM
DMS2220LFDB
Document number: DS31546 Rev. 7 - 2 7 of 7
www.diodes.com July 2009
© Diodes Incorporated
DMS2220LFDB
SBR is a registered trademark of Diod es Incorporated.
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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website, harmless against all damages.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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