6 Lake Street, Lawrence, MA 01841 03/98 REV: B
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
MAXIMUM RATINGS (1)
Ratings Symbol Value Units
Collector-Emitter Voltage(3) VCEO 50 Vdc
Collector-Base Voltage(3) VCBO 75 Vdc
Emitter-Base Voltage(3) VEBO 6.0 Vdc
Collector Current (3) IC800 mAdc
Total Power Dissipation @ TA = +250C(2)
2N6989
2N6990 PD1.5
0.4 W
Operating & Storage Junction
Temperature Range TJ, Tstg -65 to +200 0C
1) Maximum voltage between transistors shall be ≥ 500 Vdc
2) Derate linearly 8.57 mW/0C above TA = +250C for 2N6989
Derate linearly 2.286 mW/0C above TA = +250C for 2N6990
Ratings apply to total package.
3) Ratings apply to each transistor in the array.
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 10 µAdc V(BR)CBO 75 Vdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc V(BR)CEO 50 Vdc
Emitter-Base Breakdown Current
IE = 10 µAdc V(BR)EBO 6.0 Vdc
Collector-Base Cutoff Current
VCB = 60 Vdc ICBO 10 ηAdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc IEBO 10 ηAdc
TECHNICAL DATA
2N6989 JAN, JTX, JTXV
2N6990 JAN, JTX, JTXV
Processed per MIL-PRF-19500/559
MULTIPLE (QUAD) NPN SILICON
DUAL-IN-LINE AND FLATPACK TRANSISTOR
2N6989
TO- 116
2N6990
14 PIN FLAT PACK
MIL-PRF
QML
DEVICES
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6 Lake Street, Lawrence, MA 01841 03/98 REV: B
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 2 of 2
2N6989, 2N6990 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (4)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
hFE
50
75
100
100
30
325
300
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc VCE(sat) 0.3
1.0 Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc VBE(sat) 0.6 1.2
2.0 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz hfe2.5 8.0
Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz hfe 50
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 8.0 pF
Input Capacitance
VEB = 0.5 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 25 pF
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
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