DATA SH EET
Product specification December 1997
DISCRETE SEMICONDUCTORS
BFT46
N-channel silicon FET
December 1997 2
NXP Semiconductors Product specification
N-channel silicon FET BFT46
DESCRIPTION
Symmetrical n-channel silicon
epitaxial planar junction field-effect
transistor in a microminiature plastic
envelope. The transistor is intended
for low level general purpose
amplifiers in thick and thin-film
circuits.
PINNING
Note : Drain and source are
interchangeable.
1 = drain
2 = source
3=gate
Marking code
BFT46 = M3p
Fig.1 Simplified outline and symbol, SOT23.
handbook, halfpage
12
gd
s
3
Top view
MAM385
QUICK REFERENCE DATA
Drain-source voltage VDS max. 25 V
Gate-sourc e voltage (open drain) VGSO max. 25 V
Total powe r dis sipation up to Tamb =40CP
tot max. 250 mW
Drain curr en t
VDS =10V; V
GS =0 IDSS 0,2 mA
1,5 mA
Transfer admittance (common source)
ID= 0,2 mA; VDS = 10 V; f = 1 kHz yfs 0,5 mS
Equivalent noise voltage
VDS =10 V; I
D=200 A; B = 0,6 to 100 Hz Vn0,5 V
December 1997 3
NXP Semiconductors Product specification
N-channel silicon FET BFT46
RATINGS
Limiting values in accordance with the Abs olu te Maximum System (IEC 134)
THERMAL RESIST ANCE
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0,7 mm.
CHARACTERISTICS
Tj=25 C unless otherwise specified
Drain-source voltage VDS max. 25 V
Drain-gate voltage (open source) VDGO max. 25 V
Gate-sourc e voltage (open drain) VGSO max. 25 V
Drain curr en t IDmax. 10 mA
Gate current IGmax. 5 mA
Total powe r dis sipation up to Tamb =40C(1) Ptot max. 250 mW
Storage temperature range Tstg 65 to 150 C
Junction temperature Tjmax. 150 C
From junction to ambient(1) Rth j-a =430K/W
Gate cut- off current
VGS =10V; V
DS =0 IGSS 0,2 nA
Drain curr en t
VDS =10V; V
GS =0 IDSS 0,2 mA
1,5 mA
Gate-source voltage
ID=50 A; VDS =10 V VGS 0,1 V
1,0 V
Gate-sourc e cut-off voltage
ID= 0,5 nA; VDS =10V V(P)GS 1,2 V
y-parameters at f = 1 kHz;
VDS =10 V; V
GS =0; T
amb =25C
Transfer admittance yfs 1,0 mS
Output admittance yos 10 S
VDS =10V; I
D=200 A; Tamb =25C
Transfer admittance yfs 0,5 mS
Output admittance yos 5S
Input capacitance at f = 1 MHz;
VDS =10V; V
GS =0; T
amb =25CC
is 5pF
Feedback capacitance at f = 1 MHz;
VDS =10V; V
GS =0; T
amb =25CC
rs 1,5 pF
Equivalent noise voltage
VDS =10V; I
D=200 A; Tamb =25C
B = 0,6 to 100 Hz Vn0,5 V
December 1997 4
NXP Semiconductors Product specification
N-channel silicon FET BFT46
Fig.2 Power derating curve.
handbook, halfpage
0Tamb (°C)
Ptot
(mW)
300
200
100
040 200
80 120 160
MDA245
Fig.3 Typical values. VDS =10 V; T
j=25C.
handbook, full pagewidth
20
1.5
0.75
1
1.25
0.5
0.25
0
−1.25 −1 151050−0.25
−0.5−0.75
MDA272
VDS (V)
VGS (V)
ID
(mA)
− 0.1 V
− 0.2 V
− 0.3 V
− 0.4 V
VGS = 0 V
max
typ
min
December 1997 5
NXP Semiconductors Product specification
N-channel silicon FET BFT46
Fig.4 Typical values. VDS =10V.
handbook, halfpage
0
0.3 V
50
ID
(mA)
100 150
1
0.75
0.25
0
0.5
MDA273
Tj (°C)
− VGS = 0 V
0.1 V
0.2 V
Fig.5 Correlation between V(P)GS and IDSS.
VDS =10 V; T
j=25C.
handbook, halfpage
0
typ
0.5
−V(P)GS
(V) at
ID = 0.5 nA
1 1.5
1.25
1
0.5
0.25
0.75
MDA274
IDSS (mA) at VGS = 0
Fig.6 yfs versus ID. VDS = 10 V; f = 1 kHz;
Tamb = 25 C.
0
typ
ID (mA)
|yfs|
(mS)
3
2
1
00.25 0.5 0.75
MDA269
Fig.7 yos versus ID. VDS =10 V; f=1 kHz;
Tamb = 25 C.
handbook, halfpage
0
typ
0.25
|yos|
(mS)
ID (mA)
0.5 0.75
5
0
4
3
2
1
MDA270
December 1997 6
NXP Semiconductors Product specification
N-channel silicon FET BFT46
Fig.8 yos versus VDS. ID= 0,4 mA; f = 1 kHz;
Tamb = 25 C.
handbook, halfpage
3001020
VDS (V)
103
102
10
1
MDA271
|yos|
(μA/V)
typ
Fig.9 Typical values. VDS =10 V; T
amb =25 C.
handbook, halfpage
0VGS (V)
Cis
(pF)
6
4
2
0−1−2−4
−3
MDA266
Fig.10 Typical values. VDS =10 V, T
amb = 25 C.
handbook, halfpage
0VGS (V)
Crs
(pF)
1.5
1
0.5
0−1−2−4
−3
MDA267
Fig.11 IGSS versus Tj. VGSS =10V; V
DS =0.
handbook, halfpage
15010050
IGSS
(nA)
0
typ
10
1
10−1
10−2
10−3
MDA268
Tj (°C)
December 1997 7
NXP Semiconductors Product specification
N-channel silicon FET BFT46
Fig.12 VDS =10V; I
D= 0,2 mA; Tamb =25C.
handbook, full pagewidth
10
4
10
3
10
2
10
1
10
typ
10
2
10
3
10
4
f (Hz)
10
5
10
6
MDA264
e
n
(nV/ Hz)
Fig.13 VDS =10V; I
D= 0,2 mA; Tamb =25C.
handbook, full pagewidth
10
4
10
3
10
2
10
1
10 10
2
10
3
10
4
f (Hz)
10
5
10
6
MDA265
typ
i
n
(fA/ Hz)
December 1997 8
NXP Semiconductors Product specification
N-channel silicon FET BFT46
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
December 1997 9
NXP Semiconductors Product specification
N-channel silicon FET BFT46
DATA SHEET STATUS
Notes
1. Please consult the most rec ently issued document before initiating or completing a design.
2. The product s tatus of device (s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
DEFINITIONS
Product specification The information and da ta
provided in a Product data she et shall define the
specification of the product as agreed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which th e NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sh eet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconduc tors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, busin es s inte rru ption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and prod uct descriptions, at any time and
without notice. This document supersedes and replaces all
information su pplied prior to the publication hereof.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critic al systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to res ult in personal inj ur y, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductor s pr od ucts in such equipme nt or
application s and therefor e such inclusion and /or use is at
the customer’s own risk.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors pro du ct is su itable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of custom er’s third
party customer(s). Customers should provide appropriate
design and opera ting safeguards to minimize the risks
associated with their ap plications and products.
December 1997 10
NXP Semiconductors Product specification
N-channel silicon FET BFT46
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semic on ductors products in order to
avoid a default of the app lications and the products or of
the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ra tings only and
(proper) operat ion of the device at these or any othe r
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the qual ity and
reliability of the device.
Terms and conditions of commercial sale NXP
Semiconductors products are sold subject to the general
terms and conditio ns of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agre ement. In case an
individual agreeme nt is co nc luded only the terms and
conditions of the resp ective agreement shall app ly. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semicon ductors products by customer.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for accepta nc e or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick refer ence data The Quick reference data is an
extract of th e product data given in the Li miting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is au tomotive qualified, the
product is not suitable fo r automotive use. It is neither
qualified nor te sted in accorda nce with automot ive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified prod ucts in automotive eq uip ment or
applications.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for suc h aut omo tive application s, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyo nd NXP
Semiconductors’ specifications such use shall be so lely at
customer’s own ris k, an d (c) customer fully inde m nifies
NXP Semiconductors for an y liability, damages or failed
product clai ms r esult ing fr om cus to mer d esi gn an d us e of
the product for automotive ap plic ations beyond NXP
Semiconductors ’ st andard warran ty and NXP
Semiconductors’ product specifications.
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Contact information
For additional information p lease visit: http://www.nxp.com
For sales offices addr esses send e- mail to: salesaddresses@nxp.com
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in th is do cum en t d oes not form part o f an y q uot ation or co ntract, is believed t o be a ccur ate a nd re liable and may be change d
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property ri ghts.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technic al content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/02/pp11 Date of release: December 1997
