© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 3
1Publication Order Number:
NCV8405/D
NCV8405, NCV8405A
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8405/A is a three terminal protected Low−Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain−to−Gate clamping for overvoltage
protection. This device is suitable for harsh automotive environments.
Features
•Short−Circuit Protection
•Thermal Shutdown with Automatic Restart
•Overvoltage Protection
•Integrated Clamp for Inductive Switching
•ESD Protection
•dV/dt Robustness
•Analog Drive Capability (Logic Level Input)
•NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
Typical Applications
•Switch a Variety of Resistive, Inductive and Capacitive Loads
•Can Replace Electromechanical Relays and Discrete Circuits
•Automotive / Industrial
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*Max current limit value is dependent on input
condition.
SOT−223
CASE 318E
STYLE 3
MARKING
DIAGRAM
V(BR)DSS
(Clamped) RDS(ON) TYP ID MAX
42 V 90 mW @ 10 V 6.0 A*
A = Assembly Location
Y = Year
W, WW = Work Week
xxxxx = V8405 or 8405A
G or G= Pb−Free Package
1
(Note: Microdot may be in either location)
1
AYW
xxxxx G
G
23
4
GATE
DRAIN
SOURCE
DRAIN
23
4
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
Overvoltage
Protection
ESD Protection
12
3
4
DPAK
CASE 369C
YWW
xxxxxG
NCV8405, NCV8405A
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage Internally Clamped VDSS 42 V
Drain−to−Gate Voltage Internally Clamped (RG = 1.0 MW)VDGR 42 V
Gate−to−Source Voltage VGS "14 V
Continuous Drain Current IDInternally Limited
Power Dissipation − SOT−223 Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TT = 25°C (Note 1)
Power Dissipation − DPAK Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TC = 25°C (Note 1)
PD1.0
1.7
11.4
2.0
2.5
40
W
Thermal Resistance − SOT−223 Version
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Tab Steady State (Note 1)
Thermal Resistance − DPAK Version
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Case Steady State (Note 1)
RqJA
RqJA
RqJT
RqJA
RqJA
RqJT
130
72
11
60
50
3.0
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 40 V, VG = 5.0 V, IPK = 2.8 A, L = 80 mH, RG(ext) = 25 W, TJ = 25°C)
EAS 275 mJ
Load Dump Voltage VLD = VA + VS (VGS = 0 and 10 V, RI = 2.0 W, RL = 6.0 W, td = 400 ms) VLD 53 V
Operating Junction Temperature TJ−40 to 150 °C
Storage Temperature Tstg −55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
DRAIN
SOURCE
GATE VDS
VGS
ID
IG
+
−
+
−
Figure 1. Voltage and Current Convention
NCV8405, NCV8405A
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3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter Test Condition Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 3)
VGS = 0 V, ID = 10 mA, TJ = 25°CV(BR)DSS 42 46 51 V
VGS = 0 V, ID = 10 mA, TJ = 150°C
(Note 5)
42 45 51
Zero Gate Voltage Drain Current VGS = 0 V, VDS = 32 V, TJ = 25°CIDSS 0.5 2.0 mA
VGS = 0 V, VDS = 32 V, TJ = 150°C
(Note 5)
2.0 10
Gate Input Current VDS = 0 V, VGS = 5.0 V IGSSF 50 100 mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS = VDS, ID = 150 mAVGS(th) 1.0 1.6 2.0 V
Gate Threshold Temperature Coefficient VGS(th)/TJ4.0 −mV/°C
Static Drain−to−Source On−Resistance VGS = 10 V, ID = 1.4 A, TJ = 25°CRDS(on) 90 100 mW
VGS = 10 V, ID = 1.4 A, TJ = 150°C
(Note 5)
165 190
VGS = 5.0 V, ID = 1.4 A, TJ = 25°C105 120
VGS = 5.0 V, ID = 1.4 A, TJ = 150°C
(Note 5)
185 210
VGS = 5.0 V, ID = 0.5 A, TJ = 25°C105 120
VGS = 5.0 V, ID = 0.5 A, TJ = 150°C
(Note 5)
185 210
Source−Drain Forward On Voltage VGS = 0 V, IS = 7.0 A VSD 1.05 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−ON Time (10% VIN to 90% ID)VGS = 10 V, VDD = 12 V
ID = 2.5 A, RL = 4.7 W
tON 20 ms
Turn−OFF Time (90% VIN to 10% ID) tOFF 110
Slew−Rate ON (70% VDS to 50% VDS)VGS = 10 V, VDD = 12 V,
RL = 4.7 W
−dVDS/dtON 1.0 V/ms
Slew−Rate OFF (50% VDS to 70% VDS) dVDS/dtOFF 0.4
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)
Current Limit VDS = 10 V, VGS = 5.0 V, TJ = 25°CILIM 6.0 9.0 11 A
VDS = 10 V, VGS = 5.0 V, TJ = 150°C
(Note 5)
3.0 5.0 8.0
VDS = 10 V, VGS = 10 V, TJ = 25°C7.0 10.5 13
VDS = 10 V, VGS = 10 V, TJ = 150°C
(Note 5)
4.0 7.5 10
Temperature Limit (Turn−off) VGS = 5.0 V (Note 5) TLIM(off) 150 180 200 °C
Thermal Hysteresis VGS = 5.0 V DTLIM(on) 15
Temperature Limit (Turn−off) VGS = 10 V (Note 5) TLIM(off) 150 165 185
Thermal Hysteresis VGS = 10 V DTLIM(on) 15
GATE INPUT CHARACTERISTICS (Note 5)
Device ON Gate Input Current VGS = 5 V ID = 1.0 A IGON 50 mA
VGS = 10 V ID = 1.0 A 400
Current Limit Gate Input Current VGS = 5 V, VDS = 10 V IGCL 0.05 mA
VGS = 10 V, VDS = 10 V 0.4
Thermal Limit Fault Gate Input Current VGS = 5 V, VDS = 10 V IGTL 0.22 mA
VGS = 10 V, VDS = 10 V 1.0
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Electro−Static Discharge Capability Human Body Model (HBM) ESD 4000 V
Machine Model (MM) 400
3. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
NCV8405, NCV8405A
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4
TYPICAL PERFORMANCE CURVES
8 V
1
10
10 100
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
L (mH)
IL(max) (A)
TJstart = 25°C
TJstart = 150°C
10
100
1000
10 10
0
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
L (mH)
Emax (mJ)
TJstart = 25°C
TJstart = 150°C
1
10
100
110
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
TIME IN CLAMP (ms)
IL(max) (A)
TJstart = 25°C
TJstart = 150°C
10
100
1000
110
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
TIME IN CLAMP (ms)
Emax (mJ)
TJstart = 25°C
TJstart = 150°C
Figure 6. Output Characteristics
VDS = 10 V
25°C
100°C
150°C
−40°C
ID (A)
VGS (V)
Figure 7. Transfer Characteristics
VDS (V)
ID (A)
VGS = 2.5 V
3 V
4 V
5 V
6 V
10 V
TA = 25°C
0
2
4
6
8
10
12
14
012345
7 V
9 V
0
2
4
6
8
10
12
12345
NCV8405, NCV8405A
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5
TYPICAL PERFORMANCE CURVES
Figure 8. RDS(on) vs. Gate−Source Voltage
VGS (V)
RDS(on) (mW)
150°C, ID = 0.5 A
150°C, ID = 1.4 A
100°C, ID = 0.5 A
100°C, ID = 1.4 A
25°C, ID = 0.5 A
25°C, ID = 1.4 A
−40°C, ID = 0.5 A
−40°C, ID = 1.4 A
Figure 9. RDS(on) vs. Drain Current
ID (A)
RDS(on) (mW)
VGS = 5 V
VGS = 10 V
ID = 1.4 A
Figure 10. Normalized RDS(on) vs. Temperature
T (°C)
RDS(on) (VGS = 5 V, TJ = 25°C)(NORMALIZED)
25°C
100°C
150°C
−40°C
Figure 11. Current Limit vs. Gate−Source
Voltage
VGS (V)
ILIM (A)
VDS = 10 V
Figure 12. Current Limit vs. Junction
Temperature
TJ (°C)
ILIM (A)
VDS = 10 V
VGS = 5 V
VGS = 10 V
Figure 13. Drain−to−Source Leakage Current
VDS (V)
IDSS (mA)
VGS = 0 V
25°C
100°C
150°C
−40°C
50
100
150
200
250
300
345678910
50
70
90
110
130
150
170
190
210
−40°C, VGS = 5 V
−40°C, VGS = 10 V
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
25°C, VGS = 5 V
25°C, VGS = 10 V
100°C, VGS = 5 V
100°C, VGS = 10 V
150°C, VGS = 10 V
150°C, VGS = 10 V
0.5
0.75
1.0
1.25
1.5
1.75
2.0
−40 −20 0 20 40 60 80 100 120 140
3
5
7
9
11
13
15
567891
0
4
6
8
10
12
14
−40 −20 0 20 40 60 80 100 120 140 160
0.001
0.01
0.1
1
10
10 15 20 25 30 35 40
NCV8405, NCV8405A
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6
TYPICAL PERFORMANCE CURVES
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
0.6
0.7
0.8
0.9
1
1.1
1.2
−40 −20 0 20 40 60 80 100 120 140
Figure 14. Normalized Threshold Voltage vs.
Temperature
T (°C)
NORMALIZED VGS(th) (V)
ID = 150 mA
VGS = VDS
Figure 15. Body−Diode Forward
Characteristics
IS (A)
VSD (V)
25°C
100°C
150°C
−40°C
VGS = 0 V
td(off)
td(on)
tf
tr
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
VGS (V)
TIME (ms)
ID = 2.5 A
VDD = 12 V
RG = 0 W
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage
VGS (V)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
ID = 2.5 A
VDD = 12 V
RG = 0 W
−dVDS/dt(on)
dVDS/dt(off)
TIME (ms)
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
RG (W)
tf, (VGS = 10 V)
tf, (VGS = 5 V)
td(off), (VGS = 10 V)
tr, (VGS = 5 V)
td(off), (VGS = 5 V)
tr, (VGS = 10 V) td(on), (VGS = 5 V)
td(on), (VGS = 10 V)
ID = 2.5 A
VDD = 12 V
dVDS/dt(off), VGS = 5 V
−dVDS/dt(on), VGS = 10 V
−dVDS/dt(on), VGS = 5 V
dVDS/dt(off), VGS = 10 V
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
RG (W)
ID = 2.5 A
VDD = 12 V
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1234567891
0
0
50
100
150
200
345678910
0.000
0.500
1.000
1.500
345678910
0
25
50
75
100
125
0 200 400 600 800 1000 1200 1400 1600 1800 2000
−0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0 500 1000 1500 20
0
NCV8405, NCV8405A
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7
TYPICAL PERFORMANCE CURVES
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
PULSE WIDTH (sec)
RqJA 1” SQ 1 Oz COPPER
Figure 20. Transient Thermal Resistance
0
20
40
60
80
100
120
140
0 100 200 300 400 500 600 700
COPPER HEAT SPREADER AREA (mm2)
qJA (°C/W)
Figure 21. qJA vs. Copper
qJA Curve with PCB cu thk 1.0 oz
qJA Curve with PCB cu thk 2.0 oz
TA 25°C
NCV8405, NCV8405A
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8
TEST CIRCUITS AND WAVEFORMS
DUT
G
D
S
RL
VDD
IDS
VIN
Figure 22. Resistive Load Switching Test Circuit
RG
+
−
td(ON) tr
VIN
IDS
td(OFF)
tf
10%
10%
90%
90%
Figure 23. Resistive Load Switching Waveforms
NCV8405, NCV8405A
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9
TEST CIRCUITS AND WAVEFORMS
VDD
IDS
VIN
L
VDS
tp
Figure 24. Inductive Load Switching Test Circuit
DUT
G
D
S
RG +
−
0 V
5 V
Tav
VIN
IDS
VDS
Tp
VDS(on)
Ipk
0
VDD
V(BR)DSS
Figure 25. Inductive Load Switching Waveforms
NCV8405, NCV8405A
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10
ORDERING INFORMATION
Device Package Shipping†
NCV8405STT1G SOT−223
(Pb−Free)
1000 / Tape & Reel
NCV8405ASTT1G SOT−223
(Pb−Free)
1000 / Tape & Reel
NCV8405DTRKG DPAK
(Pb−Free)
2500 / Tape & Reel
NCV8405STT3G SOT−223
(Pb−Free)
4000 / Tape & Reel
NCV8405ASTT3G SOT−223
(Pb−Free)
4000 / Tape & Reel
NCV8405ADTRKG DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NCV8405, NCV8405A
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11
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
HE
− −
e1
0°10°0°10°
q
q
L
L0.20 −−− −−− 0.008 −−− −−−
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
NCV8405, NCV8405A
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12
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
b
D
E
b3
L3
L4
b2
eM
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
NCV8405/D
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