2N3563 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)12 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (oC) Maximum Operating Temp (oC)125o I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)15 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)8.0m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq600M @I(C) (A) (Test Condition)8.0m @V(CE) (V) (Test Condition)10 Power Gain Min. (dB)14 @I(C) (A) (Test Condition)8.0m @V(CE) (V) (Test Condition)10 @Freq. (Hz) (Test Condition)200M Noise Figure Min. (dB) @I(C) (A) (Test Condition)