2N3563 Transistors
Bipolar NPN UHF/Microwave Transisitor
Military/High-RelN
V(BR)CEO (V)12
V(BR)CBO (V)30
I(C) Max. (A)50m
Absolute Max. Power Diss. (W)200m
Minimum Operating Temp (øC)
Maximum Operating Temp (øC)125õ
I(CBO) Max. (A)50n
@V(CBO) (V) (Test Condition)15
h(FE) Max. Current gain.200
@I(C) (A) (Test Condition)8.0m
@V(CE) (V) (Test Condition)10
f(T) Min. (Hz) Transition Freq600M
@I(C) (A) (Test Condition)8.0m
@V(CE) (V) (Test Condition)10
Power Gain Min. (dB)14
@I(C) (A) (Test Condition)8.0m
@V(CE) (V) (Test Condition)10
@Freq. (Hz) (Test Condition)200M
Noise Figure Min. (dB)
@I(C) (A) (Test Condition)
@V(CE) (V) (Test Condition)
@Freq. (Hz) (Test Condition)
Semiconductor MaterialSilicon
Package StyleTO-106
Mounting StyleT
Pinout Equivalence Code3-12
Ckt. (Pinout) NumberTR00300012
DescriptionMetal