SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 1 Amp continuous current
COMPLEMENTARY TYPE- FCX591A
PARTMARKING DETAILS - N2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current IC1A
Continuous C ollector Cur rent ICM 2A
Power Dissipation PTOT 1W
Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ) .
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V(BR)CBO 40 V IC=100µA
V(BR)CEO 40 V IC=10mA*
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Currents ICBO, 100 nA VCB=30V,
ICES 100 nA VCE=30V
Emitter Cut-Off Current IEBO 100 nA VEB=4V
Emitter Saturation Voltages VCE(sat) 0.3
0.5 V
VIC=500mA, IB=50mA*
IC=1A, IB=100mA*
VBE(sat) 1.1 V IC=1A, IB=100mA*
Base-Emitter
Turn-On V oltage VBE(on) 1.0 V IC=1A, VCE=5V*
Static Forw ard Curr ent
Transfer hFE 300
300
200
35
900 IC=1mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
Transitional Frequency fT150 MHz IC=50mA, VCE=10V
f=100MHz
Collector-Base Breakdown
Voltage Cobo 10 pF VCB=10V f=1MHz
*Measure d under pulsed conditions. Pulse width=3 00µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
For typical Characteristics graphs see FMMT491A datasheet
FCX491A
3 - 87
C
C
B
E
