SMD General Purpose Transistor (NPN) MMBT4401 SMD General Purpose Transistor (NPN) Features * NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25C unless noted otherwise) Symbol Description MMBT4401 Unit Marking Code 2X VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6.0 V Collector Current 0.6 A Ptot Power Dissipation above 25C 250 mW RJA Thermal Resistance, Junction to Ambient 357 C /W Junction Temperature 150 C -55 to +150 C IC TJ TSTG Storage Temperature Range Conditions Note 1 Note: (1) Device mounted on FR-4 PCB 1.6'' x 1.6'' x 0.06'' TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-03-26 Page 1 of 3 SMD General Purpose Transistor (NPN) MMBT4401 Electrical Characteristics (T Ambient=25C unless noted otherwise) Symbol hFE Description D.C. Current Gain Min. Max. Unit Conditions 20 - VCE=1V, IC=0.1mA 40 - VCE=1V, IC=1mA 80 - VCE=1V, IC=10mA 100 300 VCE=1V, IC=150mA 40 - VCE=2V, IC=500mA V(BR)CBO Collector-Base Breakdown Voltage 60 - V IC=0.1mA, IE=0 V(BR)CEO Collector-Emitter Breakdown Voltage* 40 - V IC=1mA, IB=0 V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=0.1mA, IC=0 - 0.40 - 0.75 0.75 0.95 - 1.20 VCEsat Collector-Emitter Saturation Voltage VBEsat Base-Emitter Saturation Voltage IC=150mA, IB=15mA V IC=500mA, IB=50mA IC=150mA, IB=15mA V IC=500mA, IB=50mA ICEV Collector Cut-off Current - 0.1 A VEB=0.4V, VCE=35V IBEV Base Cut-off Current - 0.1 A VEB=0.4V, VCE=35V hie Input Impedance 1.0 15 k hre Voltage Feedback Ratio 0.1 8.0 x10 hoe Output Admittance 1.0 30 S hfe Small Signal Current Gain 40 500 fT Current Gain-Bandwidth Product 250 - MHz CCBO Output Capacitance - 6.5 pF CEBO Input Capacitance - 30 pF td Delay Time - 15 tr Rise Time - 20 ts Storage Time - 225 tf Fall Time - 30 nS 4 VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=20mA, f=100MHz VCB=5V, f=1.0MHz, IE=0 VEB=0.5V, f=1.0MHz, IC=0 IB1=15mA IC=150mA VCC=30V VEB=2V IB1=IB2=15mA IC=150mA VCC=30V *Pulse Test Pulse Width 300s, Duty Cycle 2.0% Rev. A/AH 2008-03-25 www.taitroncomponents.com Page 2 of 3 SMD General Purpose Transistor (NPN) MMBT4401 Dimensions in mm SOT-23 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTACOES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAUDE - SAO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN' AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2008-03-25 www.taitroncomponents.com Page 3 of 3