ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
24/9/97 DB92182-AAS/A2
1mm APER TURE OPTO-ELECTRONIC SINGLE
CHANNEL SLOTTED INTERRUPTER
SWITCHES WITH TRANSISTOR SENSORS
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -40°C to + 85°C
Operating Temperature -25°C to + 85°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 5V
Power Dissipation 75mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 30V
Emitter-collector Voltage BVECO 5V
Collector Current IC20mA
Power Dissipation 75mW
ISTS100
ISTS200
3.3
DIA 2
PLCS
OPTICAL
CENTRE
LINE
12.7
E
3.0
1
24
3
9.0
8.0 11.1
10.5
0.45
0.40
7.62
6.6 3.3
3.0 2.8
2.54
Dimensions in mm
4
3
1
2
19.05
25.7
24.1
12.7 3.0
6.6 3.3
3.0
1
2
4
3ISTS100
ISTS200
11.1
10.5 3.3
3.0
2.8
OPTICAL
CENTRE
LINE
2.54
0.45
0.40
9.0
8.0
7.62
E
DESCRIPTION
The ISTS100, ISTS200 opaque
photointerrupters are single channel switches
consisting of a Gallium Arsenide infrared
emitting diode and a NPN silicon photo transistor
mounted in a polycarbonate housing. The
package is designed to optimise the mechanical
resolution, coupling efficiency, ambient light
rejection, cost and reliability. Operating on the
principle that objects opaque to infrared will
interrupt the transmission of light between an
infrared emitting diode and a photo sensor
switching the output from an "ON" state to an
"OFF" state.
FEATURES
lHigh Gain
l3mm Gap between LED and Detector
lPolycarbonate case protected against
ambient light
APPLICATIONS
lCopiers, Printers, Facsimilies, Record
Players, Casette Decks, Optoelectronic
Switches
DB92182-AAS/A2
PARAMETER MI N TY P MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.7 V IF = 50mA
Reverse Voltage (VR)5VI
R
= 100µA
Reverse Current (IR) 100 µAV
R
= 5V
Output Collector-emitter Breakdown (BVCEO)30 V I
C
= 1mA
( Note 1 )
Emitter-collector Breakdown (BVECO) 5 V I
E
= 100µA
Collector-emitter Dark Current (ICEO) 100 nA VCE = 10V
Coupled On-State Collector Current IC ( ON ) 1 . 9 mA 30mA IF , 5V VCE
( Note 1 )
Collector-emitter Saturation VoltageVCE(SAT) 0 .4 V 30mA IF , 1.8mA IC
Turn-on Time ton 8 µsV
CC = 5V ,
Turn-off Time toff 50 µsI
F
= 30mA,RL= 2.5kΩ
24/9/97
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Note 1 Special Selections are available on request. Please consult the factory.
DB92182-AAS/A2
24/9/97
25
-25 0 25 50 75 100 125
Ambient temperature TA ( °C )
75
0
100
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
0
40
50
-25 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
50
Forward current IF (mA)
0
0.5
1.0
1.5 IF = 30mA
VCE = 5V
Ambient temperature TA ( °C )
-25 0 25 50 75 100 -25 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
IF = 30mA
IC = 1.8mA
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
Normalized output current
Normalized Output Current vs.
Forward Current
Forward current IF (mA)
0.1 1 10 100
1
10
Normalized output current
Normalized Output Current vs.
Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
0.1
0.01 TA = 25°C
0.02
0.04
0.2
0.4
2
4
1.6
1.8
2.0
Normalized to
IF = 30mA
VCE = 5V
Pulsed
PW = 100µs
PRR = 100pps
IF = 50mA
30mA
20mA
5mA
10mA
Normalized Output Current
vs. Ambient Temperature
Normalized output current
Normalized to
IF = 30mA
VCE = 0.4V
Pulsed
PW = 100µs
PRR = 100pps
TA = 25°C