| Ordering number: EN 2413B | 25B1202/2SD1802 | PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications - Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of FBET, MBIT processes - Large current capacity and wide ASO - Low collector-to-emitter saturation voltage - Fast switching speed - Small and slim package making it easy to make 25B1202/2SD1802-used sets smaller ( ):25B1202 Absolute Maximum Ratings at Ta= 25C Collector to Base Voltage Vcso Collector to Emitter Voltage Vero Emitter to Base Voltage VEBO Collector Current Ic Collector Current(Pulse) Icp Collector Dissipation Pc Junction Temperature Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25C Collector Cutoff Current Icbo Emitter Cutoff Current IrBO DC Current Gain hpe(l) hrg(2) Gain-Bandwidth Product fp Output Capacitance Cob C-E Saturation Voltage VeR(sat) Te= 25C Veop=(-)40V Ip=0 Vep=()4V,Ic=0 Ver =()2V Ic=()100mA Ver=(-)2V,I=(-)3A Vcr =()10V,I= (-)50mA Veg =(-)10V,f=1MHz I=()2A,Igp=()100mA * : The 25B1202/2SD1802 are classified by 100mA hpg as follows : [100 R 200 | 140 5 280 | 200 T 400 | 280 u 560 | Package Dimensions 2045B (unit : mm) , a -8:5._ 2.3 5.0) 2 1.0.5 ray ae (1 wn Lo] wil 0.85 12 07,0). PS 0-6. * owe 0.5 on p23 1: Base 2: Collector pe-93] 3: Emitter 23-+|---}e-2.3 4: Collector SANYO: TP ()60 ()50 ()6 ()3 ()6 1 15 150 55 to +150 min typ 1003 35 150 (39)25 0.19 {0.35) Continued unit Vv Vv Vy A A Ww Ww C C max unit ()1 pA ()} pA 560% MHz pF 0.5 Vv (0.7) on next page. Pckage Dimensions 2044B (unit : mm) 0.854, 6,5 pea| me GS = att : Base : Collector : Emitter : Collector SANYO: TP-FA SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 8259MO/4137K1/41 16KIL,TS No.2113-1/4 Continued from preceding page. B-E Saturation Voltage C-B Breakdown Voltage. C-E Breakdown Voltage E-B Breakdown Voltage Turn-on Time Storage Time Fall Time VBE(sat) ViBR)CBO ViBRICEO V(BR)EBO ton tstg tr 2$B 1202/2SD1802 min typ max unit I=()2A,Ig=()100mA ()0.94 ()1.2 Vv Io=()10pA, Ip=0 ()60 Vv Ic=()1mA,Rag= ()50 Vv Ip =(}10pA,Ic =0 ()6 Vv See specified Test Circuit. 70 ns * (450)650 ns * 35 ns Switching Time Test Circuit Pw=20 s fet Duty Cycles) %. OUTPUT INPUT I c=101 B1=-10182=1A (For PNP, the polarity is reversed.) Unit (Resistance : 9, Capacitance : F) -5 5 I_- Vcr 2501802 mh nh - < ma I ag YL & A u 3 5 2 a 37? 5 2 Om 3 3-1 Sm 3 G I B=0 Go -O.4 -0.8 ~f2 71.6 -2.0 0 0.4 0.8 1.2 1.6 2.0 Collector to Emitter Voltage, Vcg V Collector to Emitter Voltage,Vog V -V Ic - V -2.0 Ic CE 2.0 c CE 2581202 2501802 =< -1-6 * 1.6 mA 2 2 -1. Bie 5 1.2 8 d 3 Oo oO x -0.8 0.8 3 a 3" 2 3 2 m oO -0.4 O o4 im I B=0: 0 = 0 0 -4 Bo =H -16 -20 9 4 8 2 16 20 Collector to Emitter Voltage,Vog V Collector to Emitter Veltage,Vog ~ V No.2113-2/4 2SB1202/2SD1802_ ' o a 2881202 VCE=-2 i | | yy RR 3S N 1 in =12 nw 4 o f Collector Currentc A \ . 14 9 r & 6 Q -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Base to Emitter Voltage,Vgp V hee - I DC Current Gain,hyg 8 -0.01 -0.1 =A Collector Currentig A fr - I g 2881202 Vce=- Gain-Bandwidth Product,fp MHz 8 10 ~0-01 -04 Collector Current,Ie A Cob - V -1.0 2881202 f=1MH Output Capacitance,c,, ~- pF 10 -1.0 -10 Collector to Base Voltage, Vcg V - 100 3.6 3.2 2.8 Z-4 BS oO Collector Current,I mm i x 4 . o o o > o 0 0.2 Q4 0.6 0.8 1.0 42 Base to Emitter Voltage,Vpp - V | hee - I 2$0180e VcE=2V ca) by = sd o T az75l a . e 2 5 = Qo 2 A 100 7 0.01 o 1.0 Collector Current,io A fr - I 7000 1 C 2$01802 VcE=10 Gain-Bandwidth Product,f MHz 8 10 0.0) . " Ot 1.0 Collector Current, A Cob - Ves 2501802 f= 1MH Output Capacitance,cy, pF 10 1.0 10 100 Collector to Base Voltage, Veg - V No.2113-3/4 25B1202/2SD1802 Collector to Emitter Base to Emitter Saturation Voltage, Vopeaty MV VcE(sat) - Ic VcE{sat) - Ic 8 000 2581202 Ics [ B=20 p180 Tc/lB=20 oo -100 Saturation Voltage, Vecg;eat) mV 8 Collector to Emitter -10 -0.01 O41 -1.0 Tod Collector Current,l - A Collector Currentlg A. 1.0 VBE{sat) - Ic YBE(sat) - Ic -10 3 $61202 $p1802 c/1B= A =1.0 Saturation Voltage, Vara V Saturation Voltage, Vara Base to Emitter -0.04 -0.! -1.0 0.01 01 1.0 Collector Currentc A Collector Current; A ASO Pc - Ta cf [B=20 10 16 $81 O2/2801802 15 27881202/2501802 4 100 ns = | 2 t2 D a 1.0 c < 2 10 z og 5 3 4 8 A 6 204 8 3 a 4 o = 3 o O 2 2hTc=25'C,0One Pulse 1 No heat sink 0.0! For PNP, minus is omitted. 0 4.0 . 10 1 oO 20 40 [a] a 0) #12006 640 Collector to Emitter Voltage, Vop V Ambient Temperature,Ta C 160 @ No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information {including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or ather rights of third parties. No.2113-4/4