2N6437 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

   



. . . designed for use in industrial–military power amplifier and switching circuit

applications.

•High Collector–Emitter Sustaining Voltage —

VCEO(sus) = 80 Vdc (Min) — 2N6436

VCEO(sus) = 100 Vdc (Min) — 2N6437

VCEO(sus) = 120 Vdc (Min) — 2N6438

•High DC Current Gain —

hFE = 20–80 @IC = 10 Adc

hFE = 12 (Min) @ IC = 25 Adc

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc

•Fast Switching Times @ IC = 10 Adc

tr = 0.3 µs (Max)

ts = 1.0 µs (Max)

tf = 0.25 µs (Max)

•Complement to NPN 2N6338 thru 2N6341

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

2N6436

ÎÎÎÎ

2N6437

ÎÎÎ

2N6438

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

100

ÎÎÎÎ

120

ÎÎÎ

140

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

120

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

6.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

200

1.14

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ,Tstg

ÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

0.875

ÎÎÎ

C/W

(1) Indicates JEDEC Registered Data.

200

00 25 50 75 100 125 150 175 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

150

125

100

175

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N6436/D

 Motorola, Inc. 1995







*Motorola Preferred Device

25 AMPERE

POWER TRANSISTORS

PNP SILICON

80, 100, 120 VOLTS

200 WATTS



CASE 1–07

TO–204AA

(TO–3)

REV 7

  

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1) 2N6436

(IC = 50 mAdc, IB = 0) 2N6437

2N6438

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

120

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0) 2N6436

(VCE = 50 Vdc, IB = 0) 2N6437

(VCE = 60 Vdc, IB = 0) 2N6438

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 90 Vdc, VBE(off) = –1.5 Vdc) 2N6436

(VCE = 110 Vdc, VBE(off) = –1.5 Vdc) 2N6437

(VCE = 130 Vdc, VBE(off) = –1.5 Vdc) 2N6438

(VCE = 80 Vdc, VBE(off) = –1.5 Vdc, TC = 150

C) 2N6436

(VCE = 100 Vdc, VBE(off) = –1.5 Vdc, TC = 150

C) 2N6437

(VCE = 120 Vdc, VBE(off) = –1.5 Vdc, TC = 150

C) 2N6438

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

µAdc

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0) 2N6436

(VCB = 120 Vdc, IE = 0) 2N6437

(VCB = 140 Vdc, IE = 0) 2N6438

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 0.5 Adc, VCE = 2.0 Vdc)

(IC = 10 Adc, VCE = 2.0 Vdc)

(IC = 25 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

120

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (1)

(IC = 10 Adc, IB = 1.0 Adc)

(IC = 25 Adc, IB = 2.5 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

1.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (1)

(IC = 10 Adc, IB = 1.0 Adc)

(IC = 25 Adc, IB = 2.5 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.8

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCE = 10 Vdc, IE = 0, f = 100 kHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

700

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rise Time (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = 1.0 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

0.3

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Storage (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Fall Time (VCC = 80 Vdc, IC = 10 A,VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

0.25

ÎÎÎ

µs

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width

300 µs; Duty Cycle

2.0%.

Figure 2. Switching Time Test Circuit

0.5

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

0.7

0.2

0.1

0.07

0.7 2.0 3.0 7.0

td @ VBE(off) = 6.0 V

+ 9.0 V

VCC

SCOPE

RB =

10 OHMS

– 5.0 V

tr, tf

10 ns

DUTY CYCLE = 1.0%

8.0 OHMS

0.03

0.05

5.0 20

– 11 V

1.0

0.3

0.5

1.0 10

NOTE: For information on Figures 3 and 6, RB and RC were

varied to obtain desired test conditions.

+ 80 V

MBR745

VCC = 80 V

IC/IB = 10

TJ = 25

t, TIME ( s)

0.3

0.2

0.3

  

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t) EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

0.3 3.0 30 300

JC(t) = r(t)R

JC = 0.875

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

100

2.0

Figure 5. Active Region Safe Operating Area

5.0

0.01 10 20 70 200

TJ = 200

0.1

0.5

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.2

50 100

200

2.0

0.02

0.05

1.0

3.0 5.0 307.0

BONDING WIRE LIMITED

THERMALLY LIMITED

TC = 25

C (SINGLE PULSE)

PULSE DUTY CYCLE

10%

SECOND BREAKDOWN LIMITED

CURVES APPLY

BELOW RATED VCEO

5.0 ms

1.0 ms

2N6436

2N6437

2N6438

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

200

C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

3.0

0.3

Figure 6. Turn-Off Time

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

0.7

0.5

0.2

0.1

0.03 0.7 1.0 2.0 5.0 10 30

VCC = 80 V

IB1 = IB2

IC/IB = 10

TJ = 25

3.0

0.3

1.0

0.07

0.05

7.0 20

2.0

0.5 0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

0.5 1.0 2.0 5.0 20 50 10010

CAPACITANCE (pF)

1000

700

300

200

TJ = 25

Cib

Cob

4000

2000

500

0.2

3000

  

4 Motorola Bipolar Power Transistor Device Data

, BASE CURRENT ( A)

IBVCE, COLLECTOR–EMITTER VOLTAGE (VOL

TS)

, COLLECTOR CURRENT ( A)

200

0.3

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

10 0.7 1.0 2.0 3.0 5.0 10 20

1.0

0.3

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMP)

2.0

1.2

0.8

0.4

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

2.0

Figure 10. “On” Voltages

IB, BASE CURRENT (AMP)

0.02 0.05 0.1 0.2 0.3 1.0 2.0

1.6

0.8

VBE, BASE-EMITTER VOLTAGE (VOLTS)

100

hFE, DC CURRENT GAIN

TJ = 150

+ 25

–55

–0.2–0.10+0.1+0.2 –0.3 –0.4 –0.5

VCE = 40 V

TJ = +150

+100

REVERSE FORWARD

7.0 30

TJ = 25

IC = 2.0 A 5.0 A 10 A 20 A

V, VOLTAGE (VOLTS)

+2.5

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

V, TEMPERATURE COEFFICIENTS (mV/ C)

+2.0

+1.0

–0.5

–2.5

VB FOR VBE

VC FOR VCE(sat)

*APPLIES FOR IC/IB

hFE @ VCE

2.0 V

Figure 12. Collector Cut-Off Region Figure 13. Base Cutoff Region

VBE @ VCE = 2.0 V

1.8

1.4

0.7 1.0 2.0 3.0 5.0 10 207.0 30

VBE, BASE-EMITTER VOLTAGE (VOLTS)

0+0.08+0.16 –0.08 –0.16 –0.24

VCE = 40 V

REVERSE FORWARD

VCE = 2.0 V

VCE = 4.0 V

0.5 0.070.03 0.70.5

1.8

1.4

1.0

0.6

0.4

0.2

0.5

–55

C to +25

+25

C to +150

+25

C to +150

–55

C to + 25

0.3 0.7 1.0 2.0 3.0 5.0 10 207.0 300.5

+1.5

+0.5

–1.0

–1.5

–2.0

+25

102

101

100

10–1

10–2

10–3

101

100

10–1

10–2

10–3

10–4

+100

+25

TJ = +150

1.2

0.6

0.2

1.6

  

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

  

6 Motorola Bipolar Power Transistor Device Data

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and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

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2N6436/D

*2N6436/D*

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