2000-09-11
1
BTS 282 Z
VPT05167
1
7
Speed TEMPFET
N-Channel
Enhancement mode
Logic Level Input
Analog driving possible
Fast switching up to 1 MHz
Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection
Avalanche rated
High current pinning
VPT05754
17
7
1
Type VDS RDS(on) Package Ordering Code
BTS 282 Z 49 V 6.5 m
P-TO220-7-3 Q67060-S6004-A2
P-TO220-7-180 Q67060-S6005-A2
P-TO220-7-230 Q67060-S6007
Temperature
Sensor
G Pin 2
A Pin 3
D Pin 4 and TAB
K Pin 5
S Pin 1 + 6 + 7
Pin Symbol Function
1 S Source
2 G Gate
3 A Anode Temperature Sensor
4 D Drain
5 K Cathode Temperature Sensor
6 S Source
7 S Source
2000-09-11
2
BTS 282 Z
Maximum Ratings
Parameter Symbol Value Unit
Drain source voltage VDS 49
V
Drain-gate voltage, RGS = 20 k
VDGR 49
Gate source voltage VGS
20
Nominal load current (ISO 10483)
VGS = 4.5 V, VDS
0.5 V, TC = 85 °C
VGS = 10 V, VDS
0.5 V, TC = 85 °C
ID(ISO)
36
52
A
Continuous drain current 1)
TC = 100 °C, VGS = 4.5V
ID80
Pulsed drain current ID
p
uls 320
Avalanche energy, single pulse
ID = 36 A, RGS = 25
EAS 2 J
Power dissipation
TC = 25 °C
Ptot 300 W
Operating temperature 2) T
j
-40 ...+175 °C
Peak temperature ( single event ) T
jp
eak 200
Storage temperature Tst
g
-55 ... +150
DIN humidity category, DIN 40 040 E
IEC climatic category; DIN IEC 68-1 40/150/56
1current limited by bond wire
2Note: Thermal trip temperature of temperature sensor is below 175°C
2000-09-11
3
BTS 282 Z
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
junction - case: RthJC - - 0.5 K/W
Thermal resistance @ min. footprint Rth
(
JA
)
- - 62
Thermal resistance @ 6 cm2 cooling area 1) Rth
(
JA
)
- 33 40
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0 V, ID = 0.25 mA
V(BR)DSS 49 - - V
Gate threshold voltage, VGS = VDS
ID = 240 µA
VGS(th) 1.2 1.6 2
Zero gate voltage drain current
VDS = 45 V, VGS = 0 V, Tj = -40 °C
VDS = 45 V, VGS = 0 V, Tj = 25 °C
VDS = 45 V, VGS = 0 V, Tj = 150 °C
IDSS
-
-
-
-
0.1
-
0.1
1
100
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V, Tj = 25 °C
VGS = 20 V, VDS = 0 V, Tj = 150 °C
IGSS
-
-
10
20
100
100
nA
Drain-Source on-state resistance
VGS = 4.5 V, ID = 36 A
VGS = 10 V, ID = 36 A
RDS(on)
-
-
8.2
5.8
9.5
6.5
m
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
2000-09-11
4
BTS 282 Z
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Forward transconductance
VDS>2*ID*RDS(on)max , ID = 80 A
gfs 30 70 - S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss - 3850 4800 pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss - 1090 1357
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss - 570 715
Turn-on delay time
VDD = 30 V, VGS = 4.5 V, ID = 80 A,
RG = 1.3
td(on) - 30 45 ns
Rise time
VDD = 30 V, VGS = 4.5 V, ID = 80 A,
RG = 1.3
tr- 37 56
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, ID = 80 A,
RG = 1.3
td(off) - 70 105
Fall time
VDD = 30 V, VGS = 4.5 V, ID = 80 A,
RG = 1.3
tf- 36 55
Gate Charge Characteristics
Gate charge at threshold
VDD = 40 V, ID=≥0,1 A , VGS = 0 to 1 V
Qg(th) - 3.8 5.7 nC
Gate charge at 5.0 V
VDD = 40 V, ID = 80 A, VGS = 0 to 5 V
Qg(5) - 92 138
Gate charge total
VDD = 40 V, ID = 80 A, VGS = 0 to 10 V
Qg(total) - 155 232
Gate plateau voltage
VDD = 40 V, ID = 80 A
V(plateau) - 3.4 - V
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BTS 282 Z
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
IS80 - - A
Inverse diode direct current,pulsed
TC = 25 °C
IFM 320 - -
Inverse diode forward voltage
VGS = 0 V, IF = 95 A
VSD - 1.25 1.6 V
Reverse recovery time
VR = 30 V, IF=IS, diF/dt = 100 A/µs
trr - 105 157 ns
Reverse recovery charge
VR = 30 V, IF=IS, diF/dt = 100 A/µs
Qrr - 0.31 0.47 µC
Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET”.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family”.
All application notes are available at http://www.infineon.com/tempfet/
Forward voltage
IAK(on) = 5 mA, Tj = -40...+150 °C
IAK(on) = 1.5 mA, Tj = 150 °C
VAK(on)
-
-
1.3
-
1.4
0.9
V
Sensor override
tP = 100 µs, Tj = -40...+150 °C
- - 10
Forward current
Tj = -40...+150 °C
IAK(on) - - 5 mA
Sensor override
tP = 100 µs, Tj = -40...+150 °C
- - 600
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BTS 282 Z
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Sensor Characteristics
Temperature sensor leakage current
Tj = 150 °C
IAK(off) - - 4 µA
Min. reset pulse duration 1)
Tj = -40...+150 °C, IAK(on) = 0.3 mA,
VAK
(
Reset
)
<0.5V
treset 100 - - µs
VAK Recovery time1)2)
Tj = -40...+150 °C, IAK(on) = 0.3 mA
trecovery - - 150
Characteristics
Holding current, VAK(off) = 5V
Tj = 25 °C
Tj = 150 °C
IAK(hold)
0.05
0.05
-
-
0.5
0.3
mA
Thermal trip temperature
VTS = 5V
TTS(on) 150 160 170 °C
Turn-off time (Pin G+A and K+S connected)
VTS = 5V, ITS(on) = 2 mA
toff 0.5 - 2.5 µs
Reset voltage
Tj = -40...+150°C
VAK(reset) 0.5 - - V
Sensor recovery behaviour:
VAK
[V ]
treset
trecovery
5
4
0
ON Reset OFFSensor
Sensor RESET
1See diagram Sensor recovery behaviour
2Time after reset pulse until VAK reaches 4V again
2000-09-11
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BTS 282 Z
2 Drain current
ID = f(TC); VGS
4.5V
0 20 40 60 80 100 120 140 °C 180
TC
0
10
20
30
40
50
60
70
80
A
100
I
D
1 Maximum allowable power dissipation
Ptot = f(TC)
-40 0 40 80 120 °C 180
TC
0
25
50
75
100
125
150
175
200
225
250
275
W
325
P
tot
3 Typ. transient thermal impedance
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: D=tp/T
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3
s
tp
-2
10
-1
10
0
10
1
10
2
10
K/W
ZthJA
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
4 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 -8
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0 10 1 10 3
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
K/W
ZthJC
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
2000-09-11
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BTS 282 Z
5 Safe operating area
ID=f(VDS); D=0.01; TC=25°C; VGS=4.5V
10 0 10 1 10 2
V
VDS
0
10
1
10
2
10
3
10
A
I
D
30µsRdson=Vds/Id
DC
100ms
10ms
1ms
100µs
6 Typ. output characteristic
ID = f(VDS); Tj=25°C
Parameter: VGS
0 1 2 V4
VDS
0
20
40
60
80
100
120
140
160
A
200
I
D
3V
3.5V
4V
4.5V
5V
6V
7V
10V
7 On-state resistance
RON = f(Tj); ID=36A; VGS = 4.5V
-50 -25 0 25 50 75 100 125 °C 175
Tj
0
2
4
6
8
10
12
14
16
m
20
RDS(on)
typ.
max.
8 On-state resistance
RON = f(Tj); ID=36A; VGS = 10V
-50 -25 0 25 50 75 100 125 °C 175
Tj
0
2
4
6
8
10
m
14
RDS(on)
typ.
max.
2000-09-11
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BTS 282 Z
9 Typ. transfer characteristics
ID = f(VGS); VDS = 12V; Tj = 25°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
VGS
0
10
20
30
40
50
60
70
80
90
100
110
120
A
150
I
D
10 Typ. input threshold voltage
VGS(th) = f(Tj); VDS=VGS
Parameter: ID
-50 -25 0 25 50 75 100 125 °C 175
Tj
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
2.4
V
GS(th)
240µA
2.4mA
24mA
240mA
11 Typ. capacitances
C = f(VDS); VGS=0 V, f=1 MHz
0 5 10 15 20 25 30 V40
VDS
-1
10
0
10
1
10
2
10
nF
C
Ciss
Coss
Crss
12 Typ. reverse diode forward
charcteristics IF = f(VSD)
tp = 80µs (spread); Parameter: T
j
0.0 0.2 0.4 0.6 0.8 1.0 V1.4
VSD
-1
10
0
10
1
10
2
10
3
10
A
IF
150°C
25°C
2000-09-11
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BTS 282 Z
13 Typ. gate charge
VGS = f(QGate)
Parameter: ID puls = 80 A
0 40 80 120 160 nC 240
QGate
0
2
4
6
8
10
12
V
16
BTS 282 Z
V
GS
0,8 VDS max
DS max
V
0,2
14 Drain-source break down voltage
V(BR)DSS = f(Tj)
-50 -25 0 25 50 75 100 125 °C 175
Tj
45
46
47
48
49
50
51
52
53
54
55
56
V
58
V(BR)DSS
2000-09-11
11
BTS 282 Z
Package Ordering Code
P-TO220-7-3 Q67060-S6004-A2
Package Ordering Code
P-TO220-7-180 Q67060-S6005-A2
3.7
9.5
9.9
15.6
2.8
12.8
0.5
2.4
9.2
1.3
4.4
0.6
1.27
1.27
3.9
8.4
GPT05167
3.3
10.2
8.6
1)
1) shear and punch direction no burrs this surface
6 x 7.62
=
1.27
0.6
6 x 1.27 = 7.62 0.25 M
10.5
8
9.9
0.1
4.4
2.4
1.5 9.2
0.5
1)
±0.15
+0.1
-0.03
AB
-0.02
1.3
+0.1
±0.2
3.6
±0.4
+0.15
6.6
7.5
6.5
(1.3)
B
A
(14.1)
0.05
0.1 B
0 ... 0.15
5
+3
1) Shear and punch direction no burrs this surface
All metal surfaces tin plated, except area of cut
Back side, heatsink contour
Package Ordering Code
P-TO220-7-230 Q67060-S6007
2000-09-11
12
BTS 282 Z
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
