MLN1030S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1030S is Designed for Class A Linear Applications up to 1.0 GHz. PACKAGE STYLE .280 4L STUD A 45 FEATURES: * Class A Operation * PG = 9.0 dB at 1.0 W/1.0 GHz * OmnigoldTM Metalization System D S S B G C D J E MAXIMUM RATINGS IC 0.250 A VCBO 40 V VCEO VEBO I F G H K #8-32 UNC DIM MINIMUM inches / mm inches / mm 28 V A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 3.5 V C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 PDISS 7.0 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C JC 20 C/W .130 / 3.30 .245 / 6.22 H .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10623 TC = 25 C NONETEST CONDITIONS SYMBOL .137 / 3.48 .572 / 14.53 F G CHARACTERISTICS MAXIMUM MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 40 V BVCEO IC = 1.0 mA 28 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 24 V hFE VCE = 5.0 V COB VCB = 28 V PG VCE = 20 V POUT = 1.0 W IC = 100 mA 20 f = 1.0 MHz ICQ = 150 mA f = 1.0 GHz 9.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 120 --- 5.0 pF dB REV. B 1/1