ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT223 * 6 amps continuous current * Up to 10 amps peak current * Very low saturation voltages APPLICATIONS * Motor driving * Line switching * High side switches * Subscriber line interface cards (SLIC) ORDERING INFORMATION DEVICE ZXTN2011GTA ZXTN2011GTC REEL SIZE 7" 13" PINOUT TAPE WIDTH QUANTITY PER REEL 12mm 1,000 units embossed 4,000 units DEVICE MARKING ZXTN 2011 TOP VIEW ISSUE 1 - JUNE 2005 1 SEMICONDUCTORS ZXTN2011G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT V Collector-base voltage BV CBO 200 Collector-emitter voltage BV CEO 100 V Emitter-base voltage BV EBO 7 V Continuous collector current (a) IC 6 A Peak pulse current I CM 10 A Power dissipation at T A =25C (a) PD 3.0 W Linear derating factor Power dissipation at T A =25C (b) Linear derating factor 24 mW/C PD 1.6 W 12.8 mW/C Operating and storage temperature range T j , T stg -55 to +150 C THERMAL RESISTANCE PARAMETER Junction to ambient SYMBOL (a) R JA VALUE UNIT 42 C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 1 - JUNE 2005 SEMICONDUCTORS 2 ZXTN2011G CHARACTERISTICS ISSUE 1 - JUNE 2005 3 SEMICONDUCTORS ZXTN2011G ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO 200 235 MAX. UNIT CONDITIONS V I C =100A I C =1A, RB1k Collector-emitter breakdown voltage BV CER 200 235 V Collector-emitter breakdown voltage BV CEO 100 115 V I C =10mA* Emitter-base breakdown voltage BV EBO 7 8.1 V I E =100A Collector cut-off current I CBO Collector cut-off current 20 nA V CB =150V 0.5 A VCB=150V,Tamb=100C I CER 20 nA V CB =150V R 1k 0.5 A VCB=150V,Tamb=100C V EB =6V Emitter cut-off current I EBO Collector-emitter saturation voltage V CE(SAT) 10 nA 21 35 mV I C =0.1A, I B =5mA* 50 65 mV IC=1A, IB=100mA* 95 125 mV IC=2A, IB=100mA* 180 220 mV IC=5A, IB=500mA* Base-emitter saturation voltage V BE(SAT) 1020 1120 mV I C =5A, I B =500mA* Base-emitter turn-on voltage V BE(ON) 920 1000 mV I C =5A, V CE =2V* Static forward current transfer ratio H FE 100 230 100 200 30 60 IC=5A, VCE=2V* 10 20 IC=10A, VCE=2V* 130 I C =10mA, V CE =2V* IC=2A, VCE=2V* 300 MHz I C =100mA, V CE =10V Transition frequency fT Output capacitance C OBO 26 pF V CB =10V, f=1MHz* Switching times t ON 41 ns t OFF 1010 I C =1A, V CC =10V, I B1 =I B2 =100mA f=50MHz * Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. ISSUE 1 - JUNE 2005 SEMICONDUCTORS 4 ZXTN2011G TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2005 5 SEMICONDUCTORS ZXTN2011G PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E b2 2.90 3.10 0.114 0.122 C 0.23 0.33 0.009 0.013 D 6.30 6.70 0.248 0.264 6.70 7.30 0.264 0.287 E1 3.30 3.70 0.130 0.146 L 0.90 - 0.355 - - - - - - (c) Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2005 SEMICONDUCTORS 6