G E SOLID STATE 3875081 GE SOLID STATE High-Speed Power Transistors 1 DE Bj sa7soa1 0017101 0 i O1E 17101 DB 7-29-23 2N3053, 2N3053A General-Purpose, Medium-Power Silicon N-P-N Planar Transistors For Small-Signal Applications Features: = Maximum safe-area-of-operation curve a High gain-bandwidth product fy = 100 MHz a Low leakage current Applications: = Audio amplifiers = Controlled amplitiers = Power supplies @ Power oscillators The RCA-2N3053 and 2N3053A are silicon n-p-n planar transistors useful up to 20 MHz in small-signal, medium- power applications. These types are supptied in the JEDEC TO-205AD package. MAXIMUM RATINGS, Absolute-Maximum Values: Vcern(sus) Ree= 102 * VeEO(SUS) occ ec ecce reece tee en eer eneeceetenneeeraneserererncerecee nese? Veev(sus) Vee = -1.5V Tags Ty cece cece nee cena eee t ee ee ner sean en nanan ee ee rene eee teense ae T, At distance 1/16 + 1/32 In. (1.58 mm + 0.8 mm) from seating plane for 108 MAX. .....cereererteseesrereeseransecenes * in accordance with JEDEC registration data. 104 File Number 960 TERMINAL DESIGNATIONS B c (Case? 92CS-27512 JEDEC TO-205AD 2N3053 2N3053A sean ecnsenteeneene 60 80 v 50 70 v se naeaeeveorseensene 40 60 v 60 80 Vv 5 5 Vv 0.7 0.7 A 5 WwW wee 1 1 Ww ... -~ Derate linearly 0.0286. W/C vc eee eves eeaereseee _ -65 to +200 C vce ceennenencaecenes ope 235 8D 0644 D-09 G E SOLID STATE Ol DE fp) 3875081 OO17102 1 mre 3875081 GE SOLID STATE O1E 17102 D T-2Z9--Z High Speed Power Transistors 2N3053, 2N3053A ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25C TEST CONDITIONS LIMITS VOLTAGE CURRENT CHARACTERISTICS Vide mA dc 2N3053 2N3053A UNITS ] Ves Vee Vee ic IB Min. | Max. | Min. | Max. | 30 oe - | 025 | - A js co | - las} - | - | - | | [o2 | | leev - 60 1.5 _ - _- _ 0.25 pA | leso . - - 4 0 - - 0.25 - 0.25 pA . - 2.5 - 150 - 25 - 25 - Nee - 10 _ 1508 - 50 250 50 250 | Visriceo - ~ - 0.1 - 60 _ 80 - Vv TV (BRIEBO _ _ _ 0 _ 5 _ 5 _ Vv 1e=0.1mA | Voceo(sus) _- - - 0.18 0 40 - 60 - ve +| Voen(sus cen(sus) | | | 1008} | 5 | | 7 | V Ree = 102 | Vee(sat) - _ - 150 15 - 1.7 0.6 1 v +) Vce(sat) _- - - 150 15 _- 1.4 - 0.3 Vv | Vee - 2.5 _ 150 _- _ 17 - 1 Vv . hfe - 10 - 50 _- 5 - 5 _ f= 20 MHz 1 Gono 10 - - _ - 15 _ 45 pF f= 140 kHz | Gin - _ -0.5 0 - - 80 - 80 pF f = 140 kHz Rsc - _ - _- - - 35 - 35 C/W Resa - - - - _ - 175 _ 175 | C/W * in accordance with JEDEC registration data. 4 Pulsed; pulse duration = 300 ys, duty factory < 2%. | 1 i q . 105 0645 D-10 3875081 G E sotip state C2 DEG 3475081 GoleLo3 3 [7-29-25 High-Speed Power Irar rs 2N3053, 2N3053A I 2 4 6 910 100 COLLECTOR-TO-EMITTER VOLTAGE (Vcg)V 92c5-27989 4a Fig. 1 - Maximum operating areas for 2N3053, 2N3053A. TO- EMITTER VOLTAGE (ice) * &3 Ss v Ss g SS a MAXIMUM TRANSISTOR DISSIPATION (Pt )W 06 10 BASE-TO-EMITTER VOLTAGE (Vgel- CASE OR AMBIENT TEMPERATURE (Te OR Tay 8c 92CS-1Z326R2 9zcs-aa1e~ Fig. 2 - Dissipation derating curves for all types. Fig. 3 - Typical transfer characteristics for all types. ENT TEMPERATURE (Ta}=25C wo op v 2 a A & o i. H = % z 3 ye = = = Z 5 & & 4 S 8 3 ? 4 a a a z e 3 8 8 8 COLLECTOR-TO-EMITTER VOLTAGE (Vee) COLLECTOR CURRENT (IhmA 92CSAZ335R2 gacS-123aR2 Fig. 4 - Typical dc beta characteristics for all types. Fig. 5 - Typical variation of gain-bandwidth product with Ic and VcE for aif types. 106 0646 D-11 3875081 GE SOLID STATE OL DE 3875081 0017104 5 J T29-23 0647 BASE CURRENT {Igi-mA Fig. 6 - Typical Input characteristics for all types. LECTOR- TO-EMITTER VOLTAGE (VcE)=!0 D-12 2 4 BASE-TO- EMITTER VOLTAGE (VaEJ mA o 8 t = a Z 2 o z So 5 9 iy 4 2 6 a sres-42329R2 High-Speed Power Transistors 2N3053, 2N3053A TEMPERATURE (T COLLECTOR-TO-EMITTER VOLTAGE {Vce}V S2CS-12327RZ Fig. 7 - Typical output characteristics for all types. 107