2N5415S - 2N5416S Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant commercial version Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415S and 2N5416S epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in the longer leaded TO-5 and low profile U4 and UA packaging. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N5415 through 2N5416 series * JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485. TO-205AD (TO-39) Package (See part nomenclature for all available options.) * RoHS compliant commercial version Also available in: TO-5 package (long-leaded) 2N5415 - 2N5416 APPLICATIONS / BENEFITS * * * U4 package General purpose transistors for low power applications requiring high frequency switching. Low package profile. Military and other high-reliability applications. (surface mount) 2N5415U4 - 2N5416U4 UA package (surface mount) 2N5415UA - 2N5416UA MAXIMUM RATINGS @ T A = +25 C unless otherwise noted Parameters / Test Conditions Symbol 2N5415S 2N5416S Unit Collector-Emitter Voltage V CEO 200 300 V Collector-Base Voltage V CBO 200 350 V Emitter-Base Voltage V EBO 6.0 6.0 V IC 1.0 1.0 A Collector Current Operating & Storage Junction Temperature Range T J , T stg -65 to +200 Thermal Resistance Junction-to-Ambient R JA 234 o C/W Thermal Resistance Junction-to-Case R JC 17.5 o C/W PT 0.75 10 Total Power Dissipation (1) @ T A = +25 C (2) @ T C = +25 C Notes: 1. Derate linearly 4.29 mW/C for TA > +25 C. 2. Derate linearly 57.2 mW/C for T C > +25 C. C W MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0305-1, Rev. 1 (7/30/13) (c)2013 Microsemi Corporation Page 1 of 6 2N5415S - 2N5416S MECHANICAL and PACKAGING * * * * * * CASE: Hermetically sealed, kovar base, nickel cap TERMINALS: Gold plated kovar and solder dip (Sn63/Pb37) on JAN, JANTX, and JANTXV versions. NOTE: Solder dipped versions are not RoHS compliant. MARKING: Part number, date code, manufacturer's ID and serial number POLARITY: PNP WEIGHT: Approximately 1.064 grams See Package Dimensions on last page. PART NOMENCLATURE JAN 2N5415 S Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS level Blank = Commercial Symbol C obo I CEO I CEX I EBO h FE V CEO V CBO V EBO Short Leaded TO-39 JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance Collector cutoff current, base open Collector cutoff current, circuit between base and emitter Emitter cutoff current, collector open Common-emitter static forward current transfer ratio Collector-emitter voltage, base open Collector-emitter voltage, emitter open Emitter-base voltage, collector open T4-LDS-0305-1, Rev. 1 (7/30/13) (c)2013 Microsemi Corporation Page 2 of 6 2N5415S - 2N5416S ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted OFF CHARACTERISTICS Parameters / Test Conditions Collector-Emitter Breakdown Voltage I C = 50 mA, I B = 5 mA, L = 25 mH; f = 30 - 60 Hz Emitter-Base Cutoff Current V EB = 6.0 V Collector-Emitter Cutoff Current V CE = 200 V, V BE = 1.5 V V CE = 300 V, V BE = 1.5 V Collector-Emitter Cutoff Current V CE = 150 V V CE = 250 V Collector-Emitter Cutoff Current V CE = 200 V V CE = 300 V Collector-Base Cutoff Current V CB = 175 V V CB = 280 V V CB = 200 V V CB = 350 V V CB = 175 V, T A = +150 C V CB = 280 V, T A = +150 C 2N5415S 2N5416S Symbol Min. V (BR)CEO 200 300 Max. Unit V I EBO 20 A 2N5415S 2N5416S I CEX 50 A 2N5415S 2N5416S I CEO1 50 A 2N5415S 2N5416S I CEO2 1 mA 2N5415S 2N5416S 2N5415S 2N5416S 2N5415S 2N5416S I CBO1 50 A I CBO2 500 A I CBO3 1 mA Min. Max. Unit 30 15 15 120 ON CHARACTERISTICS Parameters / Test Conditions Forward-Current Transfer Ratio I C = 50 mA, V CE = 10 V I C = 1 mA, V CE = 10 V I C = 50 mA, V CE = 10 V, T A = +150 C Collector-Emitter Saturation Voltage I C = 50 mA, I B = 5 mA Base-Emitter Voltage Non-Saturation I C = 50 mA, V CE = 10 V Symbol h FE V CE(sat) 2.0 V V BE 1.5 V Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal ShortCircuit Forward Current Transfer Ratio I C = 10 mA, V CE = 10 V, f = 5 MHz Small-signal short Circuit Forward-Current Transfer Ratio I C = 5 mA, V CE = 10 V, f 1 kHz Output Capacitance V CB = 10 V, I E = 0, 100 kHz f 1 MHz T4-LDS-0305-1, Rev. 1 (7/30/13) Symbol Min. Max. |h fe | 3 15 h fe 25 C obo (c)2013 Microsemi Corporation 15 pF Page 3 of 6 2N5415S - 2N5416S ELECTRICAL CHARACTERISTICS @ T A = +25 C unless otherwise noted. (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time V CC = 200 V, I C = 50 mA, I B1 = 5 mA Turn-Off Time V CC = 200 V, I C = 50 mA, I B1 = I B2 = 5 mA Symbol Min. Max. Unit t on 1 s t off 10 s IC - COLLECTOR CURRENT - A SAFE OPERATING AREA (See SOA graph below and MIL-STD-750, method 3053) DC Tests T C = +25 C, t P = 0.4 s, 1 Cycle Test 1 V CE = 10 V, I C = 1 A Test 2 V CE = 100 V, I C = 100 mA Test 3 V CE = 200 V, I C = 24 mA (2N5415S only) Test 4 V CE = 300 V, I C = 10 mA (2N5416S only) V CE - COLLECTOR - EMITTER VOLTAGE - V Maximum Safe Operating Area (T J = 200 C) T4-LDS-0305-1, Rev. 1 (7/30/13) (c)2013 Microsemi Corporation Page 4 of 6 2N5415S - 2N5416S o Theta ( C/W) GRAPHS Time (s) o Theta ( C/W) FIGURE 1 Thermal impedance graph (R JA ) Time (s) FIGURE 2 Thermal impedance graph (R JA ) T4-LDS-0305-1, Rev. 1 (7/30/13) (c)2013 Microsemi Corporation Page 5 of 6 2N5415S - 2N5416S PACKAGE DIMENSIONS Dimensions Inch Millimeters Symbol CD CH HD LC LD LL LU L1 L2 Q TL TW r P Min Max 0.305 0.335 0.240 0.260 0.335 0.370 0.200 TP 0.016 0.021 0.500 0.750 0.016 0.019 0.050 0.250 0.050 0.029 0.045 0.028 0.034 0.010 45 TP 0.100 - Min Max 7.75 8.51 6.10 6.60 8.51 9.40 5.08 TP 0.41 0.53 12.70 19.05 0.41 0.48 1.27 6.35 1.27 0.74 1.14 0.71 0.86 0.25 45 TP 2.54 - Notes 6 7, 8 7, 8 7, 8 7, 8 7, 8 5 4 3 10 6 NOTES: 1. 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for information only. Beyond r (radius) maximum, TW shall be held for a minimum length of 0.011 (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. Leads at gauge plane 0.054 +0.001 -0.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. This device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 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