T4-LDS-0305-1, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 1 of 6
2N5415S – 2N5416S
Compliant
commercial
version
PNP Silicon Low-Power Transistor
Qualified per MIL-PRF-19500/485
Qualified Levels:
JAN, JANT X, JANTXV
and JANS
DESCRIPTION
This family of 2N5415S and 2N5416S epitaxial planar transistors are military qualified up to a
JANS level for high-reliabil it y applic at ions. These devices are also available in the longer
leaded TO-5 and low profile U4 and UA packaging.
TO-205AD
(TO-39) Package
Also available in:
TO-5 package
(long-leaded)
2N5415 – 2N5416
U4 package
(surface mount)
2N5415U4 – 2N5416U4
UA package
(surface mount)
2N5415UA – 2N5416UA
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N5415 thr ough 2N 5416 series
• JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485.
(See part nomenclature for all available options.)
• RoHS compliant commercial version
APPLICATIONS / BENEFITS
• General purpo se tr an si stors for low power applications requiring high frequency switching.
• Low package profile.
• Military and other high-reliabi lity applica tions.
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise note d
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol 2N5415S 2N5416S Unit
Collector-Emitter Voltage VCEO 200 300 V
Collector-Base Voltage VCBO 200 350 V
Emitter-Base Voltage VEBO 6.0 6.0 V
Collector Current IC 1.0 1.0 A
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
°C
Thermal Resistance Junction-to-Ambient RӨJA 234
o
C/W
Thermal Resi stan ce Jun cti on-to-Case RӨJC 17.5
o
C/W
Total Power Dissipation
@ TA = +2 5 °C (1)
@ TC = +25 °C (2) PT 0.75
10 W
Notes: 1. Derate linearly 4.29 mW/°C for TA > +25 °C.
2. Derate linearly 57.2 mW/°C for TC > +25 °C.
T4-LDS-0305-1, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 2 of 6
2N5415S – 2N5416S
• CASE: Hermetically seale d, k ov ar base, nic kel cap
• TERMINALS: Gold plated kovar and solder dip (Sn63/Pb37) on JAN, JANTX, and J ANTXV versions. NOTE: Solder dipped
versions are not RoHS compliant.
• MARKING: Part number, date code, manuf act urer ’ s ID and ser ial nu mber
• POLARITY: PNP
• WEIGHT: Approximately 1.064 grams
• See Package Dimensions on last page.
JAN 2N5415 S
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level
Blank = Commercial
Short Leaded TO-39
JEDEC type number
(see Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-base open-circuit output capacitance
ICEO
Collector cutoff current, base open
ICEX
Collector cut of f curr ent, circuit bet ween bas e and emitter
IEBO
Emitter cutoff current, collector open
hFE
Common-emitter static forward current transfer ratio
VCEO
Collector-emitter voltage, base open
VCBO
Collector-emitter voltage, emitter open
VEBO
Emitter-base voltage, collector open
T4-LDS-0305-1, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 3 of 6
2N5415S – 2N5416S
OFF CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO
200
300
V
I
C
= 50 mA, I
B
= 5 mA,
L = 25 mH; f = 30 – 60 Hz
2N5415S
2N5416S
Emitter-Base Cutoff Current
VEB = 6.0 V
IEBO 20 µA
Collector-Emitter Cutoff Current
ICEX 50 µA
V
CE
= 200 V, V
BE
= 1.5 V
VCE = 300 V, VBE = 1.5 V
2N5415S
2N5416S
Collector-Emitter Cutoff Current
ICEO1 50 µA
V
CE
= 150 V
VCE = 250 V
2N5415S
2N5416S
Collector-Emitter Cutoff Current
ICEO2 1 mA
V
CE
= 200 V
VCE = 300 V
2N5415S
2N5416S
Collector-Base Cutoff Current
ICBO1 50 µA
V
CB
= 175 V
VCB = 280 V
2N5415S
2N5416S
V
CB
= 200 V
VCB = 350 V
2N5415S
2N5416S
ICBO2 500 µA
V
CB
= 175 V, T
A
= +150 ºC
VCB = 280 V, TA = +150 ºC
2N5415S
2N5416S
ICBO3 1 mA
ON CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Forward-Current Transfer Ratio
IC = 50 mA, VCE = 10 V
IC = 1 mA, VCE = 10 V
I
C
= 50 mA, V
CE
= 10 V, T
A
= +150 ºC
hFE
30
15
15
120
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 5 mA
VCE(sat) 2.0 V
Base-Emitter Voltage Non-Saturation
IC = 50 mA, VCE = 10 V
VBE 1.5 V
DYNAMIC CHA RACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-
|hfe| 3 15
Circuit Forward Current Transfer Ratio
I
C
= 10 mA, V
CE
= 10 V, f = 5 MHz
Small-signal short Circuit Forward-Current
hfe
25
Transfer Ratio
I
C
= 5 mA, V
CE
= 10 V, f ≤ 1 kHz
Output Capac ita nc e
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz
Cobo 15 pF
T4-LDS-0305-1, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 4 of 6
2N5415S – 2N5416S
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
VCC = 200 V, IC = 50 mA, IB1 = 5 mA
ton
1 µs
Turn-Off Time
VCC = 200 V, IC = 50 mA, IB1 = IB2 = 5 mA
toff
10 µs
SAFE OPERATING AREA
(See SOA graph below and MIL-STD-750, method 3053)
DC Tests
TC = +25 °C, tP = 0.4 s, 1 Cycle
Test 1
VCE = 10 V, IC = 1 A
Test 2
VCE = 100 V, IC = 100 mA
Test 3
VCE = 200 V, IC = 24 mA (2N5415S only)
Test 4
VCE = 300 V, IC = 10 mA (2N5416S only)
VCE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area (TJ = 200 ºC)
I
C
– COLLECTOR CURRE NT - A
T4-LDS-0305-1, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 5 of 6
2N5415S – 2N5416S
Time (s)
FIGURE 1
Thermal impedance graph (RӨJA)
Time (s)
FIGURE 2
Thermal impedance graph (RӨJA)
Theta (oC/W)
Theta (oC/W)
T4-LDS-0305-1, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 6 of 6
2N5415S – 2N5416S
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of 0.0 11 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane 0.054 +0.001 -0.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. This dev ice may be
measured by direct methods.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
Dimensions
Symbol
Inch
Millimeters
Notes
Min
Max
Min
Max
CD
0.305
0.335
7.75
8.51
CH
0.240
0.260
6.10
6.60
HD
0.335
0.370
8.51
9.40
LC
0.200 TP
5.08 TP
6
LD
0.016
0.021
0.41
0.53
7, 8
LL
0.500
0.750
12.70
19.05
7, 8
LU
0.016
0.019
0.41
0.48
7, 8
L1
-
0.050
-
1.27
7, 8
L2
0.250
-
6.35
-
7, 8
Q
-
0.050
-
1.27
5
TL
0.029
0.045
0.74
1.14
4
TW
0.028
0.034
0.71
0.86
3
r
-
0.010
-
0.25
10
α
45° TP
45° TP
6
P
0.100
-
2.54
-