6427525 N C ELECTRONICS INC 98D 18893 D YT 397-13 N E c ELECTRONICS INC 46 ve b427S525 00184543 O IT 2 ry rr ee oe est yoy ae MOS FIELD. EFFECT TRANSISTC 2SK707 "FAST SWITCHING N-CHANNEL SILICON POWER MOS FET Features PACKAGE DIMENSIONS Suitable for switching power supplies, (Unit: mm) DC-DC converters and pulse circuits ; oe High speed switching 16.5 as 222202 .020.5 *Low RDSCon) re g rc *No second breakdown x Pye F a ae . . . ~ 2 215 i ) + ; ol a5fe Y Absolute Maximum Ratings(Ta=25C) z Hl Woe Drain to Source Voltage VOSS 250V a |PY - Gate to Source Voltage YGSS = 207 H rosso. i |oss=0.1 Continuous Orain Current Dena J = 254 Lt Pulse Orain Current IDCpulse)s= 1004 os dpe: Total Power Dissipation PT 3.0 ee = 3. Gave " Total Power Dissipation PTs 120 . - 3. Source Channel Temperature Tch 150 C . . Storage Temperature Tstg -55t0+150 C % PWS100 uws,Duty Cycles 32 % x Tc=25 C. Electrical Characteristics (Ta225 C) Characteristics Symbo | Min. | Typ. | Max. | Unit | .Tesi Conditions Drain Leakage Current ~~ IDSs 100 | A | VDS=250V,VGS=0 Gate to Source Leakage Current 1GSS 4100 | ndA- | VGS=20V,VES=0 Gate to Source Cutoff Vol tage VaSCof#) 1.5 3.5] VY | VOSS10V,1D=1.CnA Forward Transfer Acmittance \yfs| 5.0 S | YOS=10V,10= 134 Drain to Source Qn-State RDSCon) 0.12 | 0.15 QO | VGS=10V,1D= 134 Resistance Input Capacitance Ciss 2950 pF | VoS= 10V, Output Capacitance Coss $90 pF | VCS=9, Reverse Transfer Capacitance Crss 450 pF | f=1.0NK2 Turn-On Delay Time tdCon) 25 ns | 1D= 134, Rise Time tr 85 ns | VGSCon)= 10V, Turn-Of? Delay Time tuCoff) 115 ns | Yec=150V, Fall Time tf 85 ns L=lL.5 Q | t they are lree from parece intongemente nn nee OF Feprenens int NEC Corpe oratic: en 6427525 N E C ELECTRONICS INC 38D NE ELECTRONICS INC - 28K707 18894 D 7-39-13 48 Def Lua7saS Oo1aady hl I tv. = Cc ELECTRON CEVICE =e TURN-ON AND TURN-OFF TIME TEST CIRCUIT AL OUT . 2 wa tat pe . Rin t PG: Ring #10 a 7 a7 $ 0 Vin ' tL | onl ys Outy Cyeiesl 9% DERATING FACTOR of FOREARD BIAS SAFE OPERATING ASS . 100 S \ 5 20 aN 8 : \ j uy 60 ~ . 40 IN eo oe # 20 IN. & NX Gn IN 0:20 40 60 80 [CO [20 [4d 160 TC-Case Tezperature-"C TOTAL POZER DISSIPATION ys. CASE TEN? ERATURE 120-~ = \ = 106 s \ 2 -s0 N 3 \ 2 eo 69 he g \ 2 40 2 20 & 0 39 60 $6 1270) #1S0) TEC Te-Case Tespersture-"C Vas Gate [ Vee men SO 92 Volt , 6 Weve, 0 10 4% - scon))\ term ip SO 2% T TH % | Ih Deal Curent | patie 10% Wave form : | . tecon) ty bd lottyammmne 5 en teff , FORYARD BIAS SAFE OPERATING AREA oo 100 Bulse ~ e = 5 t 6 = g Ou! sien ed } 00! tagle s / 0.1 i 19 Ico 1o00 10-Dratn Current-A 0 YDS-Drain to Source Yoltage- DRAIN CURRENT ys. DRAIN TO SOURCE YCLTAGE cv Pulsed 5Y i sav | 40 8&0 12 YOS-Grain to Source Yoltsse-7 1s gO 6427525 N & C ELECTRONICS INC 88D 18895 B T-39-13 NE C ELECTRONICS INC 44 Dey b4e275e5 0018895 3 Tr NEC ascents OSK707 FORIASD TRANSFER ACUITTANCE SOURCE TO DRAIN DICOE vs. DRAIN CUR2ZENT FORIA8D YCLTAGE 100 100 ! a s & a - & {0 a a = 10 -_ i= a t = os 8 BE ay = | = 5 =_ a { 0 oi Ol ; ! io) 100, 0 02 064 08 O08 1.0 12-14 16 -1D-Orain Current-A YS0-Source to Drain Yoltage-Y CAPACITANCE vs. DRAIN TO DRAIN TO SOURCE ON-STATE RESISTANCE SOURCE YOLTAGE _.. . vs, GATE 70 SOURCE YOLTAGE : Ico ne . . 30 % ES t {900 as g 3 s 20 & =o on - Yu . = . Ea ioe & ico @a ze ae ao [0 . { 10 ; 100 Q } 10 15 20 YOS-Drain to Source Yoltage- GS-Gate to Source Yoltage-Y DPAIN TO SOURCE ON-STATE RESISTANCE DRAIN TO SOURCE ON-STATE RESISTANCE Ys. CHANNEL TEMPERATURE vs. DRAIN CURSENT : yasai0 0.5 Pulsed tte a5 Go Ba 04 58 - 55 on : A on a3 =e 02 > ze <2 a s | e ye fe l s= OQ be 6s VOSaicy ae Zt 0.1 aS e 0 | HA | 0 43 0 12C 169 2C0 Qu 1 10 TahaPhaeenal Tesonratures T IN-frain CurrenteA 6427525 N & C ELECTRONICS INC 98D 18896 D T-39-13 NE C ELECTRONICS INC q4 DER Gue7se5 UULestb 5 a 2SK7 O07 NEC seomon cence: GATE TO SOURCE CUTOFF VOLTAGE TRANSTeR CHARACTERISTICS Ys. NNEL TEMPERATURE 100 = vs . Yostes. 8 3.0 : eo . 4 & z 10 se] 3 2S 2.0 Pe i ac ~ s c= 6 as = Ef == E Ze 10 ' e S22 ebe al . ; 0 2 4 6 8 10 {27 | 0 "40. 80. _120 160 200 YGS-Gate to Source Yoltage-Y Teh-Channe! Tezperature-"C TURN-ON AND TURN-OFF TIME 1000 === : ki t idCot#)| 100 te td(on), tr, td(off), tf-Tine-ns { Qu! i 10 100 10-Drain Current-A NEC Corporation INTERNATIONAL ELECTACN OEVICES DIV. . NEC Building, 32-1, Shita Gochome Minato-ku, Tekye 108, Jacan Tel: Tokyo 454-1111 Teiex Accress: NEZTTCK J226268 Gable Adoress: MICRCPHCHE TOXYD m