2SC3264 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) Electrical Characteristics Symbol ICBO Unit VCB=230V 100max A VEB=5V 100max A IC=25mA 230min V 24.40.2 VCEO 230 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=5A 50min IB 5 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 200(Tc=25C) W fT VCE=12V, IE=-2A 60typ MHz Tj 150 C COB VCB=10V, f=1MHz 250typ pF -55 to +150 C hFE Rank O(50 to 100), Y(70 to 140) 21.40.3 7 9 a b 2 3 5.450.1 RL () IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (s) tstg (s) tf (s) 60 12 5 10 -5 0.5 -0.5 0.30typ 2.40typ 0.50typ A 400m 10 A A 200m 10 0m A 5 50mA I B =20mA 0 0 1 2 3 15 2 1 I C =10A 0 4 0 0.5 1.0 1.5 0 2.0 h FE - I C Temperature Characteristics (Typical) (V C E =4V) 200 200 Typ 50 100 Transient Thermal Resistance DC Curr ent Gain h FE 100 25C -30C 50 10 5 10 17 0.02 Collector Current I C (A) 0.1 0.5 f T - I E Characteristics (Typical) 2 3 1 5 10 17 j-a - t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) Safe Operating Area (Single Pulse) P c - T a Derating (V C E =12V) 40 200 10 80 3 10 100 Collector-Emitter Voltage V C E (V) 300 Co lle ctor Cu rren t I C ( A) nk Emitter Current I E (A) -10 si -1 at 0.1 -0.1 he 0 -0.02 120 ite Without Heatsink Natural Cooling fin 0.5 20 In 1 ith 40 5 160 W Typ s DC 10 60 m Ma xim um Powe r Dissipat io n P C (W) 100 Cut-o ff Fr eque ncy f T ( MH Z ) DC Curr ent Gain h FE 125C 1 1 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 Base Current I B (A) h FE - I C Characteristics (Typical) 0.1 5 5A Collector-Emitter Voltage V C E (V) 10 0.02 10 p) Collector Current I C (A) 600m em A 17 eT 1.0 15 (V C E =4V) 3 Cas A C ( 1.5 125 0A Collector Current I C (A) 2. E I C - V BE Temperature Characteristics (Typical) j- a ( C/W) A C Weight : Approx 18.4g a. Part No. b. Lot No. V CE ( sat ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 0 3. 3.0 +0.3 -0.1 5.450.1 B VCC (V) 17 0.65 +0.2 -0.1 1.05 +0.2 -0.1 Typical Switching Characteristics (Common Emitter) I C - V CE Characteristics (Typical) 2.1 2-o3.20.1 20.0min Tstg 6.00.2 36.40.3 mp) V Ratings e Te 230 VCBO External Dimensions MT-200 (Ta=25C) Conditions (Cas Unit -30C Ratings 25C Absolute maximum ratings (Ta=25C) Symbol Application : Audio and General Purpose 4.0max LAPT 80 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(C) 65