MMBZ20VAWT1G - ON Semiconductor L.L.C.

November, 2011 − Rev. 3

1Publication Order Number:

MMBZ27VAW/D

MMBZxxVAWT1G Series,

SZMMBZxxVAWT1G Series

40 Watt Peak Power

Zener Transient Voltage

Suppressors

SC−70 Dual Common Anode Zeners

for ESD Protection

These dual monolithic silicon Zener diodes are designed for

applications requiring transient overvoltage protection capability. They

are intended for use in voltage and ESD sensitive equipment such as

computers, printers, business machines, communication systems,

medical equipment and other applications. Their dual junction common

anode design protects two separate lines using only one package. These

devices are ideal for situations where board space is at a premium.

Features

•SC−70 Package Allows Either Two Separate Unidirectional

Configurations or a Single Bidirectional Configuration

•Working Peak Reverse Voltage Range

•Standard Zener Breakdown Voltage Range: 15 − 33 V

•Peak Power − 40 W @ 1.0 ms (Unidirectional),

per Figure 5 Waveform

•ESD Rating:

− Class 3B (>16 kV) per the Human Body Model

− Class C (>400 V) per the Machine Model

•Low Leakage < 5.0 mA

•Flammability Rating UL 94 V−0

•AEC−Q101 Qualified and PPAP Capable − SZMMBZxxVAWT1G

•SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

•These are Pb−Free Devices

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

Package designed for optimal automated board assembly

Small package size for high density applications

Available in 8 mm Tape and Reel

Use the Device Number to order the 7 inch/3,000 unit reel.

http://onsemi.com

SC−70

CASE 419

STYLE 4

Device Package Shipping†

ORDERING INFORMATION

MARKING

DIAGRAM

XX = Specific Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

XX MG

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBZxxVAWT1G SC−70

(Pb−Free)

3000 / Tape &

Reel

See specific marking information in the device marking

column of the table on page 2 of this data sheet.

DEVICE MARKING INFORMATION

SZMMBZxxVAWT1G SC−70

(Pb−Free)

3000 / Tape &

Reel

Uni−Directional TVS

IPP

VRWM

VCVBR

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series

http://onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Power Dissipation @ 1.0 ms (Note 1)

@ TL ≤ 25°C

Ppk 40 W

Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C

Derate above 25°C

°PD°200

1.6

°mW°

mW/°C

Thermal Resistance Junction−to−Ambient RqJA 618 °C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Non−repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.

2. FR−5 = 1.0 x 0.75 x 0.62 in.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)

Symbol Parameter

IPP Maximum Reverse Peak Pulse Current

VCClamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IRMaximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

ITTest Current

QVBR Maximum Temperature Coefficient of VBR

IFForward Current

VFForward Voltage @ IF

ZZT Maximum Zener Impedance @ IZT

IZK Reverse Current

ZZK Maximum Zener Impedance @ IZK

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)

(VF = 0.9 V Max @ IF = 10 mA)

Device

Marking

VRWM

IR @

VRWM

Breakdown Voltage VC @ IPP (Note 4)

QVBR

VBR (Note 3) (V) @ ITVCIPP

Volts nA Min Nom Max mA V A mV/5C

SZ/MMBZ15VAWT1G AT 12 50 14.25 15 15.75 1.0 21 1.9 12.3

SZ/MMBZ20VAWT1G AU 17 50 19.00 20 21.00 1.0 28 1.4 17.2

SZ/MMBZ27VAWT1G AA 22 50 25.65 27 28.35 1.0 40 1.0 24.3

SZ/MMBZ33VAWT1G AV 26 50 31.35 33 34.65 1.0 46 0.87 30.4

3. VBR measured at pulse test current IT at an ambient temperature of 25°C.

4. Surge current waveform per Figure 5 and derate per Figure 6

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series

http://onsemi.com

TYPICAL CHARACTERISTICS

−40 + 50

Figure 1. Typical Breakdown Voltage

versus Temperature

(Upper curve for each voltage is bidirectional mode,

lower curve is unidirectional mode)

TEMPERATURE (°C)

+ 100 + 150

−40 + 25

1000

Figure 2. Typical Leakage Current

versus Temperature

TEMPERATURE (°C)

+ 85 + 125

100

0.1

0.01

BREAKDOWN VOLTAGE (VOLTS)

(VBR @ IT)

IR (nA)

Figure 3. Typical Capacitance versus Bias Voltage

(Upper curve for each voltage is unidirectional mode,

lower curve is bidirectional mode)

0 25 50 75 100 125 150 175

300

250

200

150

100

Figure 4. Steady State Power Derating Curve

TEMPERATURE (°C)

FR−5 BOARD

ALUMINA SUBSTRATE

01 2 3

320

280

240

160

120

C, CAPACITANCE (pF)

BIAS (V)

200

15 V

5.6 V

PD, POWER DISSIPATION (mW)

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series

http://onsemi.com

TYPICAL CHARACTERISTICS

0.1 1 10 100 1000

100

Power is defined as VRSM x IZ(pk) where VRSM is

the clamping voltage at IZ(pk).

PW, PULSE WIDTH (ms)

UNIDIRECTIONAL

RECTANGULAR

WAVEFORM, TA = 25°C

BIDIRECTIONAL

Figure 5. Pulse Waveform

VALUE (%)

100

001 2 34

t, TIME (ms)

Figure 6. Pulse Derating Curve

PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAYS TO

50% OF IPP

HALF VALUE −IPP

tr≤ 10 ms

PEAK VALUE −IPP

100

0 25 50 75 100 125 150 175 200

TA, AMBIENT TEMPERATURE (°C)

Figure 7. Maximum Non−repetitive Surge

Power, Ppk versus PW

Figure 8. Maximum Non−repetitive Surge

Power, Ppk(NOM) versus PW

0.1 1 10 100 1000

100

PW, PULSE WIDTH (ms)

UNIDIRECTIONAL

RECTANGULAR

WAVEFORM, TA = 25°C

BIDIRECTIONAL

Power is defined as VZ(NOM) x IZ(pk) where

VZ(NOM) is the nominal Zener voltage measured at

the low test current used for voltage classification.

PEAK PULSE DERATING IN % OF PEAK

POWER OR CURRENT @ TA = 25°C

Ppk, PEAK SURGE POWER (W)

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series

http://onsemi.com

PACKAGE DIMENSIONS

SC−70 (SOT−323)

CASE 419−04

ISSUE N

1.9

0.075

0.65

0.025

0.65

0.025

0.9

0.035

0.7

0.028 ǒmm

inchesǓ

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. ANODE

AA2

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.05 (0.002)

DIM

MIN NOM MAX MIN

MILLIMETERS

0.80 0.90 1.00 0.032

INCHES

A1 0.00 0.05 0.10 0.000

A2 0.70 REF

b0.30 0.35 0.40 0.012

c0.10 0.18 0.25 0.004

D1.80 2.10 2.20 0.071

E1.15 1.24 1.35 0.045

e1.20 1.30 1.40 0.047

0.035 0.040

0.002 0.004

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

NOM MAX

2.00 2.10 2.40 0.079 0.083 0.095

e1 0.65 BSC

0.38

0.028 REF

0.026 BSC

0.015

0.20 0.56 0.008 0.022

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

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Phone: 81−3−5817−1050

MMBZ27VAW/D

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