2SA1201
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1201
Voltage Amplifier Applications
Power Amplifier Applications
High voltage: VCEO = 120 V
High transition frequency: fT = 120 MHz (typ.)
Small flat package
PC = 1 to 2 W (mounted on a ceramic substrate)
Complementary to 2SC2881
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 120 V
Collector-emitter voltage VCEO 120 V
Emitter-base voltage VEBO 5 V
Collector current IC 800 mA
Base current IB 160 mA
PC 500
Collector power dissipation PC
(Note 1)
1000
mW
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
PW-MINI
JEDEC
JEITA SC-62
TOSHIBA 2-5K1A
Weight: 0.05 g (typ.)
2SA1201
2004-07-07
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 120 V, IE = 0 0.1 µA
Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 µA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 120 V
Emitter-base breakdown voltage V (BR) EBO IE = 1 mA, IC = 0 5 V
DC current gain hFE
(Note 2) VCE = 5 V, IC = 100 mA 80 240
Collector-emitter saturation voltage VCE (sat) IC = 500 mA, IB = 50 mA 1.0 V
Base-emitter voltage VBE VCE = 5 V, IC = 500 mA 1.0 V
Transition frequency fT VCE = 5 V, IC = 100 mA 120 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 30 pF
Note 2: hFE classification O: 80 to 160, Y: 120 to 240
Marking
D
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics indicator
2SA1201
2004-07-07
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Safe Operating Area
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFEIC
DC current gain hFE
Collector current IC (mA)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
Common emitter
VCE = 5 V
3
500
30 1000 10
100
10
100 300
300
1000
Ta = 100°C
25
25
50
30
0 0.8 0.40.2
0
0.4
0.8
Common emitter
VCE = 5 V
0.6
0.6
0.2
1.0 1.2
Ta = 100°C 25 25
3
0.1
30 300 10
0.05
Common emitter
IC/IB = 10
0.01
100
0.3
0.5
Ta = 100°C
25
25
0.03
1000
0 16 8 4
0
400
800
600
12
200 IB = 1 mA
10
0
7
5
4
3
2
Common emitter
Ta = 2 5 ° C
*: Single nonrepetitive pulse
Ta = 2 5 ° C
Curves must be derated linearly
with increase in temperature.
Tested without a substrate.
0.3
1
10 1 100 300
3
30
10
100
5
50
IC max (pulse)*
IC max (continuous)
100 ms*
1 ms*
10 ms*
VCEO max
30 3
300
3000
1000
500
DC
operation
Ta = 2C
0
0
0.6
0.2
0.8
0.4
1.2
1.0
120 80 100 40 6020 140 160
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
(1)
(2)
2SA1201
2004-07-07
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The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
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document shall be made at the customer’s own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE