© 2007 Microchip Technology Inc. DS21354D-page 1
TC1072/TC1073
Features:
50 µA Ground Current for Longer Battery Life
Very Low Dropout Voltage
Choice of 50 mA (TC1072) and 100 mA (TC1073)
Output
High Output Voltage Accuracy
Standard or Custom Output Voltages
Power-Saving Shutdown Mode
ERROR Output Can Be Used as a Low Battery
Detector or Processor Reset Generator
Bypass Input for Ultra Quiet Operation
Overcurrent and Overtemperature Protection
Space-Saving 6-Pin SOT-23 Package
Pin Compatible Upgrades for Bipolar Regulators
Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 3.6V, 4.0V, 5.0V
Other output voltages are available. Please
contact Microchip Technology Inc. for details.
Applications:
Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulators for SMPS
Pagers
Typical Application Circuit
General Description
The TC1072 and TC1073 are high accuracy (typically
±0.5%) CMOS upgrades for older (bipolar) low dropout
regulators. Designed specifically for battery-operated
systems, the devices’ CMOS construction eliminates
wasted ground current, significantly extending battery
life. Total supply current is typically 50 µA at full load
(20 to 60 times lower than in bipolar regulators).
The devices’ key features include ultra low noise
operation (plus optional Bypass input); very low
dropout voltage (typically 85 mV, TC1072 and 180 mV,
TC1073 at full load) and fast response to step changes
in load. An error output (ERROR) is asserted when the
devices are out-of-regulation (due to a low input
voltage or excessive output current). ERROR can be
used as a low battery warning or as a processor
RESET signal (with the addition of an external RC
network). Supply current is reduced to 0.5 µA (max)
and both VOUT and ERROR are disabled when the
shutdown input is low. The devices incorporate both
overtemperature and overcurrent protection.
The TC1072 and TC1073 are stable with an output
capacitor of only 1 µF and have a maximum output
current of 50 mA, and 100 mA, respectively. For higher
output current versions, please see the TC1185,
TC1186, TC1187 (IOUT = 150 mA) and TC1107,
TC1108 and TC1173 (IOUT = 300 mA) data sheets.
Package Type
TC1072
TC1073
VOUT
GND
1 µF
+
VIN VIN VOUT
16
2
4
3
SHDN
Shutdown Control
(from Power Control Logic)
ERRO
R
ERROR
Bypass
CBYPASS
470 pF
5
RP
6
1
4
23
6-Pin SOT-23
VOUT ERROR
SHDNGNDVIN
5
Bypass
50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass
TC1072/TC1073
DS21354D-page 2 © 2007 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (VIN + 0.3V)
Power Dissipation................Internally Limited (Note 6)
Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V
Operating Temperature Range......-40°C < TJ < 125°C
Storage Temperature..........................-65°C to +150°C
Note: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC1072/TC1073 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, VIN =V
OUT + 1V, IL= 0.1 mA, CL=3.3μF, S HDN >V
IH, TA=+25°C.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Symbol Parameter Min Typ Max Units Test Conditions
VIN Input Operating Voltage 2.7 6.0 VNote 9
IOUTMAX Maximum Output Current 50
100
mA
mA
TC1072
TC1073
VOUT Output Voltage VR
2.5%
VR ±0.5% VR + 2.5% VNote 1
TCVOUT VOUT Temperature Coefficient
20
40
ppm/°C Note 2
ΔVOUT/ΔVIN Line Regulation 0.05 0.35 %(V
R + 1V) VIN6V
ΔVOUT/VOUT Load Regulation 0.5 2.0 %I
L = 0.1 mA to IOUTMAX
(Note 3)
VIN-VOUT Dropout Voltage
2
65
85
180
120
250
mV IL=0.1mA
IL=20mA
IL=50mA
IL= 100 mA (Note 4),
TC1073
IIN Supply Current 50 80 µA SHDN =V
IH, IL=0 (Note 8)
IINSD Shutdown Supply Current 0.05 0.5 µA SHDN =0V
PSRR Power Supply Rejection Ratio 64 dB FRE 1kHz
IOUTSC Output Short Circuit Current 300 450 mA VOUT =0V
ΔVOUT/ΔPDThermal Regulation 0.04 V/W Notes 5, 6
TSD Thermal Shutdown Die Temperature 160 °C
ΔTSD Thermal Shutdown Hysteresis 10 °C
eN Output Noise 260 nV/Hz IL=I
OUTMAX
470 pF from Bypass to GND
Note 1: VR is the regulator output voltage setting. For example: VR= 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
2:
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN =6V for T=10 ms.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
7: Hysteresis voltage is referenced by VR.
8: Apply for Junction Temperatures of -40°C to +85°C.
9: The minimum VIN has to justify the conditions = VIN VR+V
DROPOUT and VIN 2.7V for IL= 0.1 mA to IOUTMAX.
TC VOUT = (VOUTMAX – VOUTMIN) x 106
VOUT x ΔT
© 2007 Microchip Technology Inc. DS21354D-page 3
TC1072/TC1073
SHDN Input
VIH SHDN Input High Threshold 45 %VIN VIN = 2.5V to 6.5V
VIL SHDN Input Low Threshold 15 %VIN VIN = 2.5V to 6.5V
ERROR Open Drain Output
VINMIN Minimum VIN Operating Voltage 1.0 V
VOL Output Logic Low Voltage 400 mV 1 mA Flows to ERROR
VTH ERROR Threshold Voltage 0.95 x VR V See Figure 4-2
VHYS ERROR Positive Hysteresis 50 mV Note 7
tDELAY VOUT to ERROR Delay 2.5 ms Vout falling from VR to
VR-10%
TC1072/TC1073 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise noted, VIN =V
OUT + 1V, IL= 0.1 mA, CL=3.3μF, S HDN >V
IH, TA= +25°C.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Symbol Parameter Min Typ Max Units Test Conditions
Note 1: VR is the regulator output voltage setting. For example: VR= 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
2:
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN =6V for T=10 ms.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
7: Hysteresis voltage is referenced by VR.
8: Apply for Junction Temperatures of -40°C to +85°C.
9: The minimum VIN has to justify the conditions = VIN VR+V
DROPOUT and VIN 2.7V for IL= 0.1 mA to IOUTMAX.
TC VOUT = (VOUTMAX – VOUTMIN) x 106
VOUT x ΔT
TC1072/TC1073
DS21354D-page 4 © 2007 Microchip Technology Inc.
2.0 TYPICAL CHARACTERISTICS CURVES
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
ILOAD = 10mA
CIN = 1μF
COUT = 1μF
TEMPERATURE (°C)
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.140
0.160
0.180
0.200
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
ILOAD = 100mA
CIN = 1μF
COUT = 1μF
TEMPERATURE (°C)
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0
10
20
30
40
50
60
70
80
90
GND CURRENT (
μ
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
ILOAD = 10mA
CIN = 1μF
COUT = 1μF
Ground Current vs. VIN (VOUT = 3.3V)
VIN (V)
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
0.090
0.100
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
ILOAD = 50mA
CIN = 1μF
COUT = 1μF
TEMPERATURE (°C)
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0.000
0.050
0.100
0.150
0.200
0.250
0.300
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
ILOAD = 150mA
CIN = 1μF
COUT = 1μF
TEMPERATURE (°C)
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0
10
20
30
40
50
60
70
80
90
GND CURRENT (
μ
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
ILOAD = 100mA
CIN = 1μF
COUT = 1μF
Ground Current vs. VIN (VOUT = 3.3V)
VIN (V)
© 2007 Microchip Technology Inc. DS21354D-page 5
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
0
10
20
30
40
50
60
70
80
GND CURRENT (μA)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
ILOAD = 150mA
CIN = 1μF
COUT = 1μF
VIN (V)
Ground Current vs. VIN (VOUT = 3.3V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
LOAD
= 100mA
C
IN
= 1μF
C
OUT
= 1μF
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
IN
(V)
V
OUT
(V)
V
OUT
vs.
V
IN
(V
OUT
= 3.3V)
3.274
3.276
3.278
3.280
3.282
3.284
3.286
3.288
3.290
-40 -20 -10 0 20 40 85 125
ILOAD = 150mA
CIN = 1μF
COUT = 1μF
VIN = 4.3V
TEMPERATURE (°C)
VOUT (V)
Output Voltage vs. Temperature (VOUT = 3.3V)
0
0.5
1
1.5
2
2.5
3
3.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
I
LOAD
= 0
C
IN
= 1μF
C
OUT
= 1μF
V
IN
(V)
V
OUT
(V)
V
OUT
vs.
V
IN
(V
OUT
= 3.3V)
3.275
3.280
3.285
3.290
3.295
3.300
3.305
3.310
3.315
3.320
-40 -20 -10 0 20 40 85 125
ILOAD = 10mA
CIN = 1μF
COUT = 1μF
VIN = 4.3V
TEMPERATURE (°C)
VOUT (V)
Output Voltage vs. Temperature (VOUT = 3.3V)
TC1072/TC1073
DS21354D-page 6 © 2007 Microchip Technology Inc.
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
4.985
4.990
4.995
5.000
5.005
5.010
5.015
5.020
5.025
-40 -20 -10 0 20 40 85 125
ILOAD = 10mA
VIN = 6V
CIN = 1μF
COUT = 1μF
TEMPERATURE (°C)
Output Voltage vs. Temperature (VOUT = 5V)
VOUT (V)
0
10
20
30
40
50
60
70
-40 -20 -10 0 20 40 85 125
GND CURRENT (
μ
A)
ILOAD = 10mA
VIN = 6V
CIN = 1μF
COUT = 1μF
TEMPERATURE (°C)
Temperature
vs. Quiescent Current
(VOUT = 5V)
4.974
4.976
4.978
4.980
4.982
4.984
4.986
4.988
4.990
4.992
4.994
-40 -20 -10 0 20 40 85 125
ILOAD = 150mA
VIN = 6V
CIN = 1μF
COUT = 1μF
TEMPERATURE (°C)
Output Voltage vs. Temperature (VOUT = 5V)
VOUT (V)
Temperature vs. Quiescent Current (VOUT = 5V)
0
10
20
30
40
50
60
70
80
-40 -20 -10 0 20 40 85 125
GND CURRENT (μA)
ILOAD = 150mA
VIN = 6V
CIN = 1μF
COUT = 1μF
TEMPERATURE (°C)
10.0
1.0
0.1
0.0
0.01K 0.1K 1K 10K 100K 1000K
FREQUENCY (Hz)
Output Noise vs. Frequency
NOISE (μV/Hz)
RLOAD = 50Ω
COUT = 1μF
CIN = 1μF
CBYP = 0
1000
100
10
1
0.1
0.01
010 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
Stability Region vs. Load Current
COUT ESR (Ω)
COUT = 1μF
to 10μF
Stable Region
table Re
io
-30
-35
-40
-45
-50
-60
-55
-65
-70
-75
-80
0.01K 0.1K 1K 10K 100K 1000
K
FREQUENCY (Hz)
Power Supply Rejection Ratio
PSRR (dB)
IOUT = 10mA
VINDC = 4V
VINAC = 100mVp-p
VOUT = 3V
CIN = 0
COUT = 1μF
© 2007 Microchip Technology Inc. DS21354D-page 7
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
VOUT
Measure Rise Time of 3.3V LDO with Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 448μS
VSHDN
Measure Fall Time of 3.3V LDO with Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA
VIN = 4.3V, Temp = 25°C, Fall Time = 100μS
VOUT
VSHDN
Measure Rise Time of 3.3V LDO without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 184μS
VOUT
VSHDN
Measure Fall Time of 3.3V LDO without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Fall Time = 52μS
VOUT
VSHDN
TC1072/TC1073
DS21354D-page 8 © 2007 Microchip Technology Inc.
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Measure Rise Time of 5.0V LDO with Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Rise Time = 390μS
VOUT
VSHDN
Measure Fall Time of 5.0V LDO with Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA
VIN = 6V, Temp = 25°C, Fall Time = 167μS
VOUT
VSHDN
Measure Rise Time of 5.0V LDO without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Rise Time = 192μS
VOUT
VSHDN
Measure Fall Time of 5.0V LDO without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Fall Time = 88μS
VOUT
VSHDN
© 2007 Microchip Technology Inc. DS21354D-page 9
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
ILOAD
VOUT
Load Regulation of 3.3V LDO
Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
ILOAD = 50mA switched in at 10kHz, VOUT is AC coupled
Load Regulation of 3.3V LDO
Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
ILOAD = 150mA switched in at 10kHz, VOUT is AC coupled
ILOAD
VOUT
Load Regulation of 3.3V LDO
Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
ILOAD = 100mA switched in at 10kHz, VOUT is AC coupled
ILOAD
VOUT
VIN
VOUT
Line Regulation of 3.3V LDO
Conditions: VIN = 4V, + 1V Squarewave @ 2.5kHz
CIN = 0μF, COUT = 1μF, C BYP = 470pF,
ILOAD = 100mA, VIN & VOUT are AC coupled
TC1072/TC1073
DS21354D-page 10 © 2007 Microchip Technology Inc.
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Line Regulation of 5.0V LDO
Conditions: VIN = 6V, + 1V Squarewave @ 2.5kHz
VIN
VOUT
CIN = 0μF, COUT = 1μF, C BYP = 470pF,
ILOAD = 100mA, VIN & VOUT are AC coupled
VOUT
Thermal Shutdown Response of 5.0V LDO
Conditions: VIN = 6V, CIN = 0μF, COUT = 1μF
ILOAD was increased until temperature of die reached about 160°C, at
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160°C. The regulator
remains off until die temperature drops to approximately 150°C.
© 2007 Microchip Technology Inc. DS21354D-page 11
TC1072/TC1073
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Input Voltage Supply (VIN)
Connect unregulated input supply to the VIN pin. If
there is a large distance between the input supply and
the LDO regulator, some input capacitance is
necessary for proper operation. A 1 µF capacitor
connected from VIN to ground is recommended for
most applications.
3.2 Ground (GND)
Connect the unregulated input supply ground return to
GND. Also connect the negative side of the 1 µF typical
input decoupling capacitor close to GND and the
negative side of the output capacitor COUT to GND.
3.3 Shutdown Control Input (SHDN)
The regulator is fully enabled when a logic-high is
applied to SHDN. The regulator enters shutdown when
a logic-low is applied to SHDN. During shutdown,
output voltage falls to zero, ERROR is open-circuited
and supply current is reduced to 0.5 µA (maximum).
3.4 Out-Of-Regulation Flag (ERROR)
ERROR goes low when VOUT is out-of-tolerance by
approximately – 5%.
3.5 Reference Bypass Input (Bypass)
Connecting a 470 pF to this input further reduces
output noise.
3.6 Regulated Voltage Output (VOUT)
Connect the output load to VOUT of the LDO. Also
connect the positive side of the LDO output capacitor
as close as possible to the VOUT pin.
Pin No.
(6-Pin SOT-23) Symbol Description
1V
IN Unregulated supply input.
2 GND Ground terminal.
3 SHDN Shutdown control input.
4ERROR
Out-of-Regulation Flag. (Open drain output).
5 Bypass Reference bypass input.
6V
OUT Regulated voltage output.
TC1072/TC1073
DS21354D-page 12 © 2007 Microchip Technology Inc.
4.0 DETAILED DESCRIPTION
The TC1072 and TC1073 are precision fixed output
voltage regulators. (If an adjustable version is desired,
please see the TC1070/TC1071/TC1187 data sheet.)
Unlike bipolar regulators, the TC1072 and TC1073’s
supply current does not increase with load current. In
addition, VOUT remains stable and within regulation
over the entire 0 mA to IOUTMAX load current range, (an
important consideration in RTC and CMOS RAM
battery back-up applications).
Figure 4-1 shows a typical application circuit. The
regulator is enabled any time the shutdown input
(SHDN) is at or above VIH, and shutdown (disabled)
when SHDN is at or below V
IL. SHDN may be
controlled by a CMOS logic gate, or I/O port of a
microcontroller. If the SHDN input is not required, it
should be connected directly to the input supply. While
in shutdown, supply current decreases to 0.05 µA
(typical), VOUT falls to zero volts, and ERROR is open-
circuited.
FIGURE 4-1: Typical Application Circuit.
4.1 ERROR Open-Drain Output
ERROR is driven low whenever VOUT falls out of
regulation by more than –5% (typical). This condition
may be caused by low input voltage, output current
limiting, or thermal limiting. The ERROR output voltage
value (e.g. ERROR =V
OL at 4.75V (typical) for a 5.0V
regulator and 2.85V (typical) for a 3.0V regulator).
ERROR output operation is shown in Figure 4-2.
Note that ERROR is active tDELAY (typically, 2.5 µs)
after VOUT falls to VTH, and inactive when VOUT rises
above VTH by VHYS.
As shown in Figure 4-1, ERROR can be used as a
battery low flag, or as a processor RESET signal (with
the addition of timing capacitor C2). R1 x C2 should be
chosen to maintain ERROR below VIH of the processor
RESET input for at least 200 ms to allow time for the
system to stabilize. Pull-up resistor R1 can be tied to
VOUT, VIN or any other voltage less than (VIN + 0.3V).
FIGURE 4-2: Error Output Operation.
4.2 Output Capacitor
A 1 µF (minimum) capacitor from VOUT to ground is
recommended. The output capacitor should have an
effective series resistance greater than 0.1Ω and less
than 5.0Ω, and a resonant frequency above 1 MHz. A
1 µF capacitor should be connected from VIN to GND if
there is more than 10 inches of wire between the
regulator and the AC filter capacitor, or if a battery is
used as the power source. Aluminum electrolytic or
tantalum capacitor types can be used. (Since many
aluminum electrolytic capacitors freeze at
approximately -30°C, solid tantalums are
recommended for applications operating below -25°C.)
When operating from sources other than batteries,
supply-noise rejection and transient response can be
improved by increasing the value of the input and
output capacitors and employing passive filtering
techniques.
4.3 Bypass Input
A 470 pF capacitor connected from the Bypass input to
ground reduces noise present on the internal
reference, which in turn significantly reduces output
noise. If output noise is not a concern, this input may be
left unconnected. Larger capacitor values may be
used, but results in a longer time period to rated output
voltage when power is initially applied.
TC1072
TC1073
VOUT
SHDN
GND
ERROR
1 μF
C1
+
VIN VOUT
Shutdown Control
(to CMOS Logic or Tie
to VIN if unused)
1 μF
+
Battery
+
0.2 μF
C2
C2 Required Only
if ERROR is used as a
Processor RESET Signal
(See Text)
R1
1M
V+
BATTLOW
or RESET
Bypass
C3, 470 pF
VTH
VOUT
ERROR
VIH
VOL
HYSTERESIS (VH)
tDELAY
© 2007 Microchip Technology Inc. DS21354D-page 13
TC1072/TC1073
5.0 THERMAL CONSIDERATIONS
5.1 Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
5.2 Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst-case actual power dissipation:
EQUATION 5-1:
The maximum allowable power dissipation
(Equation 5-2) is a function of the maximum ambient
temperature (TAMAX), the maximum allowable die tem-
perature (TJMAX) and the thermal resistance from junc-
tion-to-air (θJA). The 6-Pin SOT-23 package has a θJA
of approximately 220°C/Watt.
EQUATION 5-2:
Equation 5-1 can be used in conjunction with
Equation 5-2 to ensure regulator thermal operation is
within limits. For example:
Given:
VINMAX = 3.0V ±5%
VOUTMIN = 2.7V – 2.5%
ILOADMAX = 40 mA
TJMAX = 125°C
TAMAX = 55°C
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
PD
(VINMAX – VOUTMIN)ILOADMAX
= [(3.0 x 1.05) – (2.7 x 0.975)] x 40 x 10–3
= 20.7 mW
Maximum allowable power dissipation:
In this example, the TC1072 dissipates a maximum of
20.7 mW; below the allowable limit of 318 mW. In a
similar manner, Equation 5-1 and Equation 5-2 can be
used to calculate maximum current and/or input
voltage limits.
5.3 Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads, and wide power
supply bus lines combine to lower θJA and therefore
increase the maximum allowable power dissipation
limit.
Where:
PD
(VINMAX – VOUTMIN)ILOADMAX
PD
VINMAX
VOUTMIN
ILOADMAX
= Worst-case actual power dissipation
= Minimum regulator output voltage
= Maximum output (load) current
= Maximum voltage on VIN
PDMAX = (TJMAX – TAMAX)
θ
JA
where all terms are previously defined.
PDMAX = (TJMAX – TAMAX)
θ
JA
= (125 – 55)
220
= 318 mW
TC1072/TC1073
DS21354D-page 14 © 2007 Microchip Technology Inc.
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
6.2 Taping Form
(V) TC1072
Code
TC1073
Code
1.8 EY FY
2.5 E1 F1
2.6 ET FT
2.7 E2 F2
2.8 EZ FZ
2.85 E8 F8
3.0 E3 F3
3.3 E4 F4
3.6 E9 F9
4.0 E0 F0
5.0 E6 F6
1& = part number code + threshold voltage
2
(two-digit code)
3represents year and quarter code
4represents production lot ID code
W, Width of
Carrier Tape
User Direction of Feed
P,Pitch
Standard Reel Component
Orientation Reverse Reel Component
Orientation
PIN 1
Device
Marking
PIN 1
Carrier Tape, Number of Components per Reel and Reel Size
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
6-Pin SOT-23 8 mm 4 mm 3000 7 in
© 2007 Microchip Technology Inc. DS21354D-page 15
TC1072/TC1073
6-Lead Plastic Small Outline Transistor (CH) [SOT-23]
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not ex ceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM M AX
Number of Pins N 6
Pitch e 0.95 BSC
Outside Lead Pitch e1 1.90 BSC
Overall Height A 0.90 1.45
Molded Package Thickness A2 0.89 1.30
Standoff A1 0.00 0.15
Overall Width E 2.20 3.20
Molded Package Width E1 1.30 1.80
Overall Length D 2.70 3.10
Foot Length L 0.10 0.60
Footprint L1 0.35 0.80
Foot Angle φ 30°
Lead Thickness c 0.08 0.26
Lead Width b 0.20 0.51
b
E
4
N
E1
PIN 1 ID BY
LASER MARK
D
123
e
e1
A
A1
A2 c
L
L1
φ
Microchip Technology Drawing C04-028B
TC1072/TC1073
DS21354D-page 16 © 2007 Microchip Technology Inc.
NOTES:
© 2007 Microchip Technology Inc. DS21354D-page 17
TC1072/TC1073
APPENDIX A: REVISION HISTORY
Revision D (February 2007)
Page 1: Ground current changed to 50 µA.
Package type changed from SOT-23A to SOT-23.
Added voltage options.
•T
DELAY added to Table 1-1.
Section 3.0 “Pin Descriptions”: Added pin
descriptions.
Section 4.1 “ERROR Open-Drain Output”:
Defined tDELAY
.
Changed Figure 4-2.
Updated Packaging Information.
Revision C (January 2006)
Undocumented changes.
Revision B (May 2002)
Undocumented changes.
Revision A (March 2002)
Original Release of this Document.
TC1072/TC1073
DS21354D-page 18 © 2007 Microchip Technology Inc.
NOTES:
© 2007 Microchip Technology Inc. DS21354D-page 19
TC1072/TC1073
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO. XXXXXX
Threshold PackageTemperature
Range
Device
Device TC1072: CMOS LDO with Shutdown, ERROR Output & VREF
Bypass
TC1073: CMOS LDO with Shutdown, ERROR Output & VREF
Bypass
Threshold voltage
(typical)
1.8 = 1.8V
2.5 = 2.5V
2.6 = 2.6V
2.7 = 2.7V
2.8 = 2.8V
2.85 = 2.85V
3.0 = 3.0V
3.3 = 3.3V
3.6 = 3.6V
4.0 = 4.0V
5.0 = 5.0V
Temperature Range V = -40°C to +125°C
Package CH713 = Plastic small outline transistor (CH) SOT-23,
6 lead, (tape and reel).
Examples:
a) TC1072-1.8VCH713: 1.8V
b) TC1072-2.5VCH713 2.5V
c) TC1072-2.6VCH713 2.6V
d) TC1072-2.7VCH713 2.7V
e) TC1072-2.8VCH713 2.8V
f) TC1072-2.85VCH713 2.85V
g) TC1072-3.0VCH713 3.0V
h) TC1072-3.3VCH713 3.3V
i) TC1072-3.6VCH713 3.6V
j) TC1072-4.0VCH713 4.0V
k) TC1072-5.0VCH713 5.0V
a) TC1073-1.8VCH713: 1.8V
b) TC1073-2.5VCH713 2.5V
c) TC1073-2.6VCH713 2.6V
d) TC1073-2.7VCH713 2.7V
e) TC1073-2.8VCH713 2.8V
f) TC1073-2.85VCH713 2.85V
g) TC1073-3.0VCH713 3.0V
h) TC1073-3.3VCH713 3.3V
i) TC1073-3.6VCH713 3.6V
j) TC1073-4.0VCH713 4.0V
k) TC1073-5.0VCH713 5.0V
X.X
Voltage
TC1072/TC1073
DS21354D-page 20 © 2007 Microchip Technology Inc.
NOTES:
© 2007 Microchip Technology Inc. DS21354D-page 21
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
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© 2007, Microchip Technology Incorporated, Printed in the
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Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
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Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
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Microchip received ISO/TS-16949:2002 certification for its worldwide
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Company’s quality system processes and procedures are for its PIC®
MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial
EEPROMs, microperipherals, nonvolatile memory and analog
products. In addition, Microchip’s quality system for the design and
manufacture of development systems is ISO 9001:2000 certified.
DS21354D-page 22 © 2007 Microchip Technology Inc.
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