K4W1G1646G-BC08 - Samsung - Datasheet.Directory

- 1 -

Rev. 1.1, Jan. 2011

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datasheet

K4W1G1646G

1Gb G-die gDDR3 SDRAM

96 FBGA with Lead-Free & Halogen-Free

(RoHS Compliant)

- 2 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

Revision History

Revision No. History Draft Date Remark Editor

0.5 - Preliminary Spec. Release. Jul. 2010 - S.H.Kim

0.51 - Corrected package ordering information on page 6. Sep. 2010 - S.H.Kim

- Corrected package dimension on page 8.

0.52 - Corrected MRS table and added note on page 67. Sep. 2010 - S.H.Kim

1.0 - First release Nov. 2010 - S.H.Kim

- Added corrent spec up to 2133Mbps on page 36.

1.1 - Added Values of Thermal Characteristics on page 37. Jan. 2011 - J.Y.Lee

- 3 -
datasheet gDDR3 SDRAM
Rev. 1.1
K4W1G1646G
Table Of Contents
1Gb G-die gDDR3 SDRAM
FEATURES................................................................................................................................................................... 6
Key Features................................................................................................................................................................. 6
Package pinout/Mechanical Dimension & Addressing..................................................................................................7
1 x16 Package Pinout (Top view) : 96ball FBGA  Package ....................................................................................... 7
2 FBGA Package Dimension (x16)............................................................................................................................. 8
Input/Output Functional Description.............................................................................................................................. 9
gDDR3 SDRAM Addressing .........................................................................................................................................10
Absolute Maximum Ratings .......................................................................................................................................... 11
1 Absolute Maximum DC Ratings............................................................................................................................... 11
2 DRAM Component Operating Temperature Range ................................................................................................ 11
AC & DC Operating Conditions..................................................................................................................................... 11
1 Recommended DC operating Conditions (SSTL_1.5)............................................................................................. 11
AC & DC Input Measurement Levels ............................................................................................................................12
1 AC & DC Logic input levels for single-ended signals .............................................................................................. 12
2 VREF Tolerances...................................................................................................................................................... 13
3  AC & DC Logic Input Levels for Differential Signals............................................................................................... 14
3.1. Differential signals definition ............................................................................................................................ 14
3.2. Differential swing requirement for clock (CK - CK) and strobe (DQS - DQS) .................................................. 14
3.3. Single-ended requirements for differential signals ........................................................................................... 15
4 Differential Input Cross Point Voltage...................................................................................................................... 16
5 Slew rate definition for Differential Input Signals ..................................................................................................... 16
6 Slew rate definitions for Differential Input Signals ................................................................................................... 16
AC & DC Output Measurement Levels .........................................................................................................................17
1 Single-ended AC & DC Output Levels..................................................................................................................... 17
2 Differential AC & DC Output Levels......................................................................................................................... 17
3 Single-ended Output Slew Rate .............................................................................................................................. 17
4 Differential Output Slew Rate .................................................................................................................................. 18
5 Reference Load for AC Timing and Output Slew Rate ............................................................................................ 18
6 Overshoot/Undershoot Specification ....................................................................................................................... 19
6.1. Address and Control Overshoot and Undershoot specifications...................................................................... 19
6.2. Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications ...................................................... 19
7 34ohm Output Driver DC Electrical Characteristics................................................................................................. 20
7.1. Output Drive Temperature and Voltage Sensitivity .......................................................................................... 21
8 On-Die Termination (ODT) Levels and I-V Characteristics ..................................................................................... 21
8.1. ODT DC Electrical Characteristics ................................................................................................................... 22
8.2. ODT Temperature and Voltage sensitivity ....................................................................................................... 23
9 ODT Timing Definitions ........................................................................................................................................... 24
9.1. Test Load for ODT Timings.............................................................................................................................. 24
9.2. ODT Timing Definitions .................................................................................................................................... 24
IDD Current Measure Method..................................................................................................................................... 27
1 IDD Measurement Conditions ............................................................................................................................... 27
1Gb gDDR3 SDRAM G-die IDD Specification Table ..................................................................................................36
Thermal Characteristics Table .................................................................................................................................... 37
Input/Output Capacitance ........................................................................................................................................... 38
Electrical Characteristics and AC timing for gDDR3-1333 to gDDR3-2133................................................................ 39
1 Clock Specification ................................................................................................................................................ 39
1.1. Definition for tCK(avg).................................................................................................................................... 39
1.2. Definition for tCK(abs).................................................................................................................................... 39
1.3. Definition for tCH(avg) and tCL(avg).............................................................................................................. 39
1.4. Definition for note for tJIT(per), tJIT(per, Ick) ................................................................................................. 39
1.5. Definition for tJIT(cc), tJIT(cc, Ick) ................................................................................................................. 39
1.6. Definition for tERR(nper)................................................................................................................................ 39
2 Refresh Parameters by Device Density................................................................................................................. 40
3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin ................................................................. 40
3.1. Speed Bin Table Notes .................................................................................................................................. 44

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datasheet gDDR3 SDRAM
Rev. 1.1
K4W1G1646G
Timing Parameters by Speed Grade .......................................................................................................................... 45
1 Jitter Notes ............................................................................................................................................................ 48
2 Timing Parameter Notes........................................................................................................................................ 49
3 Address/Command Setup, Hold and Derating : .................................................................................................... 50
4 Data Setup, Hold and Slew Rate Derating : .......................................................................................................... 57
Functional Description ................................................................................................................................................ 63
1 Simplified State Diagram ....................................................................................................................................... 63
2 Basic Functionality................................................................................................................................................. 64
3 RESET and Initialization Procedure ...................................................................................................................... 64
3.1. Power-up Initialization Sequence................................................................................................................... 64
3.2. Reset Initialization with Stable Power ............................................................................................................ 65
4 Register Definition ................................................................................................................................................. 66
4.1. Programming the Mode Registers ................................................................................................................. 66
4.2. Mode Register MR0 ....................................................................................................................................... 67
4.3. Burst Length, Type and Order........................................................................................................................ 67
4.4. CAS Latency .................................................................................................................................................. 68
4.5. Test Mode ...................................................................................................................................................... 68
4.6. DLL Reset ...................................................................................................................................................... 68
4.7. Write Recovery............................................................................................................................................... 68
4.8. Precharge PD DLL ......................................................................................................................................... 68
4.9. Mode Register MR1 ....................................................................................................................................... 69
4.10. DLL Enable/Disable ..................................................................................................................................... 70
4.11. Output Driver Impedance Control ................................................................................................................ 70
4.12. ODT Rtt Values ............................................................................................................................................ 70
4.13. Additive Latency (AL) ................................................................................................................................... 70
4.14. Write leveling................................................................................................................................................ 70
4.15. Output Disable ............................................................................................................................................. 70
4.16. TDQS, TDQS ............................................................................................................................................... 71
4.17. Mode Register MR2 ..................................................................................................................................... 72
4.18. Partial Array Self-Refresh (PASR) ............................................................................................................... 73
4.19. CAS Write Latency (CWL) ........................................................................................................................... 73
4.20. Auto Self-Refresh (ASR) and Self-Refresh Temperature (SRT).................................................................. 73
4.21. Dynamic ODT (Rtt_WR)............................................................................................................................... 73
4.22. Mode Register MR3 ..................................................................................................................................... 73
4.23. Multi-Purpose Register (MPR) ..................................................................................................................... 73
gDDR3 SDRAM Command Description and Operation.............................................................................................. 74
1 Command Truth Table........................................................................................................................................... 74
2 Clock Enable (CKE) Truth Table ........................................................................................................................... 75
3 No OPeration (NOP) Command ............................................................................................................................ 75
4 Deselect Command ............................................................................................................................................... 75
5 DLL-off Mode......................................................................................................................................................... 76
6 DLL on/off switching procedure ............................................................................................................................. 77
6.1. DLL "on" to DLL "off" Procedure .................................................................................................................... 77
6.2. DLL "off" to DLL "on" Procedure .................................................................................................................... 78
7 Input clock frequency change................................................................................................................................ 79
8 Write Leveling........................................................................................................................................................ 80
8.1. DRAM setting for write leveling & DRAM termination function in that mode.................................................. 80
8.2. Procedure Description.................................................................................................................................... 81
8.3. Write Leveling Mode Exit ............................................................................................................................... 82
9 Extended Temperature Usage .............................................................................................................................. 83
9.1. Auto Self-Refresh mode - ASR Mode (optional) ............................................................................................ 83
9.2. Self-Refresh Temperature Range - SRT........................................................................................................ 83
10 Multi Purpose Register ........................................................................................................................................ 84
10.1. MPR Functional Description......................................................................................................................... 84
10.2. MPR Register Address Definition................................................................................................................. 85
10.3. Relevant Timing Parameters........................................................................................................................ 85
10.4. Protocol Example......................................................................................................................................... 85
11 ACTIVE Command .............................................................................................................................................. 88
12 PRECHARGE Command .................................................................................................................................... 88
13 READ Operation.................................................................................................................................................. 88
13.1. READ Burst Operation ................................................................................................................................. 88
13.2. READ Timing Definitions.............................................................................................................................. 89
13.3. gDDR3 Clock to Data Strobe relationship.................................................................................................... 91

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datasheet gDDR3 SDRAM
Rev. 1.1
K4W1G1646G
13.4. gDDR3 Data Strobe to Data relationship ..................................................................................................... 92
13.5. tLZ(DQS), tLZ(DQ), tHZ(DQS), tHZ(DQ) Calculation .................................................................................. 92
13.6. tRPRE Calculation ....................................................................................................................................... 93
13.7. tRPST Calculation........................................................................................................................................ 93
13.8. Burst Read Operation followed by a Precharge........................................................................................... 99
14 WRITE Operation ................................................................................................................................................ 100
14.1. gDDR3 Burst Operation ............................................................................................................................... 100
14.2. WRITE Timing Violations ............................................................................................................................. 100
14.3. Motivation..................................................................................................................................................... 100
14.4. Data Setup and Hold Violations ................................................................................................................... 100
14.5. Strobe to Strobe and Strobe to Clock Violations.......................................................................................... 100
14.6. Write Timing Parameters ............................................................................................................................. 100
14.7. Write Data Mask........................................................................................................................................... 101
14.8. tWPRE Calculation....................................................................................................................................... 102
14.9. tWPST Calculation ....................................................................................................................................... 102
15 Refresh Command .............................................................................................................................................. 108
16 Self-Refresh Operation........................................................................................................................................ 109
17 Power-Down Modes ............................................................................................................................................ 110
17.1. Power-Down Entry and Exit ......................................................................................................................... 110
17.2. Power-Down clarifications - Case 1 ............................................................................................................. 114
17.3. Power-Down clarifications - Case 2 ............................................................................................................. 114
17.4. Power-Down clarifications - Case 3 ............................................................................................................. 115
18 ZQ Calibration Commands .................................................................................................................................. 116
18.1. Calibration Description ................................................................................................................................. 116
18.2. ZQ Calibration Timing .................................................................................................................................. 116
18.3. ZQ External Resistor Value and Tolerance and Capacitive loading ............................................................ 116
On-Die Termination (ODT).......................................................................................................................................... 117
1 ODT Mode Register and ODT Truth Table............................................................................................................ 117
2 Synchronous ODT Mode ....................................................................................................................................... 118
2.1. ODT Latency and Posted ODT ...................................................................................................................... 118
2.2. Timing Parameters......................................................................................................................................... 118
2.3. ODT during Reads: ........................................................................................................................................ 120
3 Dynamic ODT ........................................................................................................................................................ 121
3.1. Functional Description:................................................................................................................................... 121
3.2. ODT Timing Diagrams ................................................................................................................................... 122
4 Asynchronous ODT mode ..................................................................................................................................... 124
4.1. Synchronous to Asynchronous ODT Mode Transition ................................................................................... 124
4.2. Synchronous to Asynchronous ODT Mode Transition during Powerdown Entry........................................... 125
4.3. Asynchronous to Synchronous ODT Mode Transition during Power-Down Exit ........................................... 127
4.4. Asynchronous to Synchronous ODT Mode during short CKE high and short CKE low periods .................... 128

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datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

1. FEATURES

[ Table 1 ] Samsung gDDR3 ordering information table

NOTE :

1. Speed bin is in order of CL-tRCD-tRP.

2. Backward compatible to gDDR3-2133(14-14-14), gDDR3-1866(13-13-13), gDDR3-1600(11-11-11), gDDR3-1333(9-9-9)

2400 speed bin will be updated when JEDEC standard is fixed.

3. Backward compatible to gDDR3-1866(13-13-13), gDDR3-1600(11-11-11), gDDR3-1333(9-9-9)

4. Backward compatible to gDDR3-1600(11-11-11), gDDR3-1333(9-9-9)

5. Backward compatible to gDDR3-1333(9-9-9)

2. Key Features

[ Table 2 ] 1Gb gDDR3 G-die Speed bins

Organization gDDR3-1333

(9-9-9)

gDDR3-16005

(11-11-11)

gDDR3-18664

(13-13-13)

gDDR3-21333

(14-14-14)

gDDR3-24002

(16-16-16) Package

64Mx16 K4W1G1646G-BC15 K4W1G1646G-BC12 K4W1G1646G-BC11 K4W1G1646G-BC1A K4W1G1646G-BC08 96 FBGA

Speed gDDR3-1333 gDDR3-1600 gDDR3-1866 gDDR3-2133 gDDR3-2400 Unit

9-9-9 11-11-11 13-13-13 14-14-14 16-16-16

tCK(min) 1.5 1.25 1.07 0.935 0.83 ns

CAS Latency 911 13 14 16 tCK

tRCD(min) 13.5 13.75 13.91 13.09 13.28 ns

tRP(min) 13.5 13.75 13.91 13.09 13.28 ns

tRAS(min) 36 35 34 33 32 ns

tRC(min) 49.5 48.75 47.91 46.09 45.28 ns

•V

DD/VDDQ= 1.5V ± 0.075V at 1333/1600/1866/2133/2400

• 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin

933MHz fCK for 1866Mb/sec/pin, 1066MHz fCK for 2133Mb/sec/pin ,

1200MHz fCK for 2400Mb/sec/pin

•8 Banks

• Programmable CAS Latency(posted CAS): 9,11,12,13,14,16

• Programmable Additive Latency: 0, CL-2 or CL-1 clock

• Programmable CAS Write Latency: (CWL) = 7(1333Mbps),

8(1600Mbps), 9(1866Mbps),10(2133Mbps), 11(2400Mbps)

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with starting

address “000” only), 4 with tCCD = 4 which does not allow seamless

read or write [either On the fly using A12 or MRS]

• Bi-directional Differential Data-Strobe

• Internal(self) calibration : Internal self calibration through ZQ pin

(RZQ : 240 ohm ± 1%)

• On Die Termination using ODT pin

• Average Refresh Period : 7.8us at lower than TCASE 85°C, 3.9us at

85°C < TCASE < 95 °C,

• Asynchronous Reset

• Package : 96 balls FBGA - x16

• All of Lead-Free products are compliant for RoHS

• All of products are Halogen-Free

The 1Gb gDDR3 SDRAM G-die is organized as 8Mbit x 16 I/Os x 8 banks

device. This synchronous device achieves high speed double-data-rate

transfer rates of up to 2400Mb/sec/pin (gDDR3-2400) for general applica-

tions.

The chip is designed to comply with the following key gDDR3 SDRAM

features such as posted CAS, Programmable CWL, Internal (Self) Cali-

bration, On Die Termination using ODT pin and Asynchronous Reset .

All of the control and address inputs are synchronized with a pair of exter-

nally supplied differential clocks. Inputs are latched at the crosspoint of

differential clocks (CK rising and CK falling). All I/Os are synchronized

with a pair of bidirectional strobes (DQS and DQS) in a source synchro-

nous fashion. The address bus is used to convey row, column, and bank

address information in a RAS/CAS multiplexing style.

The gDDR3 G-die device operates with a 1.5V ± 0.075V power supply

and 1.5V ± 0.075VDDQ based upon operation frequency.

The 1Gb gDDR3 G-die device is available in 96ball FBGA(x16)

NOTE :

1. The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation.

2. Any gDDR3 speed bin also supports functional operation at lower frequencies as shown in the Table 2 if voltage rail is identical.

- 7 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

3. Package pinout/Mechanical Dimension & Addressing

3.1 x16 Package Pinout (Top view) : 96ball FBGA Package

1 2 3 4 5 6 7 8 9

AVDDQ DQU5 DQU7 DQU4 VDDQ VSS A

BVSSQ VDD VSS DQSU DQU6 VSSQ B

CVDDQ DQU3 DQU1 DQSU DQU2 VDDQ C

DVSSQ VDDQ DMU DQU0 VSSQ VDD D

EVSS VSSQ DQL0 DML VSSQ VDDQ E

FVDDQ DQL2 DQSL DQL1 DQL3 VSSQ F

GVSSQ DQL6 DQSL VDD VSS VSSQ G

HVREFDQ VDDQ DQL4 DQL7 DQL5 VDDQ H

JNC VSS RAS CK VSS NC J

KODT VDD CAS CK VDD CKE K

LNC CS WE A10/AP ZQ NC L

MVSS BA0 BA2 NC VREFCA VSS M

NVDD A3 A0 A12/BC BA1 VDD N

PVSS A5 A2 A1 A4 VSS P

RVDD A7 A9 A11 A6 VDD R

TVSS RESET NC NC A8 VSS T

Populated ball

Ball not populated

Ball Locations (x16)

Top view

(See the balls through the package)

1234 89567

- 8 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

3.2 FBGA Package Dimension (x16)

7.50 ± 0.10

3.20

0.80

6.00

(Datum B)

(Datum A)

0.10MAX

1.10 ± 0.10

#A1

87654329

1.60

7.50 ± 0.10

13.30 ± 0.10

0.37 ± 0.05

#A1 INDEX MARK

TOP VIEW

13.30 ± 0.10

0.80 x 15 = 12.00

0.80 0.40

96 - ∅0.48 Solder ball

0.2 ABM

MOLDING AREA

(Post Reflow ∅0.50 ± 0.05) (0.30)

(0.60)

BOTTOM VIEW

Units : Millimeters

0.80 x 8 = 6.40

- 9 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

4. Input/Output Functional Description

[ Table 3 ] Input/Output function description

Symbol Type Function

CK, CK Input Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of

the positive edge of CK and negative edge of CK. Output (read) data is referenced to the crossings of CK and CK

CKE Input

Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and

output drivers. Taking CKE Low provides Precharge Power-Down and Self Refresh operation (all banks idle), or

Active Power-Down (Row Active in any bank). CKE is asynchronous for self refresh exit. After VREFCA has become

stable during the power on and initialization sequence, it must be maintained during all operations (including Self-

Refresh). CKE must be maintained high throughout read and write accesses. Input buffers, excluding CK, CK, ODT

and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled during Self -Refresh.

CS Input Chip Select: All commands are masked when CS is registered HIGH. CS provides for external Rank selection on

systems with multiple Ranks. CS is considered part of the command code.

ODT Input

On Die Termination: ODT (registered HIGH) enables termination resistance internal to the gDDR3 SDRAM. When

enabled, ODT is only applied to each DQ, DQS, DQS and DM/TDQS, NU/TDQS (When TDQS is enabled via Mode

grammed to disable ODT.

RAS, CAS, WE Input Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.

(DMU), (DML) Input

Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coinci-

dent with that input data during a Write access. DM is sampled on both edges of DQS. For x8 device, the function of

DM or TDQS/TDQS is enabled by Mode Register A11 setting in MR1.

BA0 - BA2 Input

Bank Address Inputs: BA0 - BA2 define to which bank an Active, Read, Write or Precharge command is being

applied. Bank address also determines if the mode register or extended mode register is to be accessed during a

MRS cycle.

A0 - A12 Input

Address Inputs: Provided the row address for Active commands and the column address for Read/Write commands

to select one location out of the memory array in the respective bank. (A10/AP and A12/BC have additional functions,

see below)

The address inputs also provide the op-code during Mode Register Set commands.

A10 / AP Input

Autoprecharge: A10 is sampled during Read/Write commands to determine whether Autoprecharge should be per-

formed to the accessed bank after the Read/Write operation. (HIGH:Autoprecharge; LOW: No Autoprecharge)

A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or

all banks (A10 HIGH). if only one bank is to be precharged, the bank is selected by bank addresses.

A12 / BC Input Burst Chop:A12 is sampled during Read and Write commands to determine if burst chop(on-the-fly) will be per-

formed. (HIGH : no burst chop, LOW : burst chopped). See command truth table for details

RESET Input

Active Low Asynchronous Reset: Reset is active when RESET is LOW, and inactive when RESET is HIGH.

RESET must be HIGH during normal operation. RESET is a CMOS rail to rail signal with DC high and low at 80% and

20% of VDD, i.e. 1.20V for DC high and 0.30V for DC low.

DQ Input/Output Data Input/ Output: Bi-directional data bus.

DQS, (DQS) Input/Output Data Strobe: Output with read data, input with write data. Edge-aligned with read data, centered in write data.

TDQS, (TDQS) fout

Termination Data Strobe: TDQS/TDQS is applicable for X8 DRAMs only. When enabled via Mode Register A11=1 in

MR1, DRAM will enable the same termination resistance function on TDQS/TDQS that is applied to DQS/DQS. When

disabled via mode register A11=0 in MR1, DM/TDQS will provide the data mask function and TDQS is not used.

NC No Connect: No internal electrical connection is present.

VDDQ Supply DQ Power Supply: 1.5V +/- 0.075V

VSSQ Supply DQ Ground

VDD Supply Power Supply: 1.5V +/- 0.075V

VSS Supply Ground

VREFDQ Supply Reference voltage for DQ

VREFCA Supply Reference voltage for CA

ZQ Supply Reference Pin for ZQ calibration

Note : Input only pins (BA0-BA2, A0-A12, RAS, CAS, WE, CS, CKE, ODT and RESET) do not supply termination.

- 10 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

5. gDDR3 SDRAM Addressing

1Gb

2Gb

4Gb

8Gb

NOTE 1 : Page size is the number of bytes of data delivered from the array to the internal sense amplifiers when an ACTIVE command is registered.

Page size is per bank, calculated as follows: page size = 2 COLBITS * ORG÷8

where, COLBITS = the number of column address bits, ORG = the number of I/O (DQ) bits

Configuration 256Mb x 4 128Mb x 8 64Mb x 16

# of Bank 8 8 8

Bank Address BA0 - BA2 BA0 - BA2 BA0 - BA2

Auto precharge A10/AP A10/AP A10/AP

Row Address A0 - A13 A0 - A13 A0 - A12

Column Address A0 - A9,A11 A0 - A9 A0 - A9

BC switch on the fly A12/BC A12/BC A12/BC

Page size *1 1 KB 1 KB 2 KB

Configuration 512Mb x 4 256Mb x 8 128Mb x 16

# of Bank 8 8 8

Bank Address BA0 - BA2 BA0 - BA2 BA0 - BA2

Auto precharge A10/AP A10/AP A10/AP

Row Address A0 - A14 A0 - A14 A0 - A13

Column Address A0 - A9,A11 A0 - A9 A0 - A9

BC switch on the fly A12/BC A12/BC A12/BC

Page size *1 1 KB 1 KB 2 KB

Configuration 1Gb x 4 512Mb x 8 256Mb x 16

# of Bank 8 8 8

Bank Address BA0 - BA2 BA0 - BA2 BA0 - BA2

Auto precharge A10/AP A10/AP A10/AP

Row Address A0 - A15 A0 - A15 A0 - A14

Column Address A0 - A9,A11 A0 - A9 A0 - A9

BC switch on the fly A12/BC A12/BC A12/BC

Page size *1 1 KB 1 KB 2 KB

Configuration 2Gb x 4 1Gb x 8 512Mb x 16

# of Bank 8 8 8

Bank Address BA0 - BA2 BA0 - BA2 BA0 - BA2

Auto precharge A10/AP A10/AP A10/AP

Row Address A0 - A15 A0 - A15 A0 - A15

Column Address A0 - A9,A11,A13 A0 - A9,A11 A0 - A9

BC switch on the fly A12/BC A12/BC A12/BC

Page size *1 2 KB 2 KB 2 KB

- 11 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

6. Absolute Maximum Ratings

6.1 Absolute Maximum DC Ratings

[ Table 4 ] Absolute Maximum DC Ratings

NOTE :

1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions

for extended periods may affect reliability.

2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.

3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than 0.6 x VDDQ, When VDD and VDDQ are less than 500mV; VREF may be

equal to or less than 300mV.

6.2 DRAM Component Operating Temperature Range

[ Table 5 ] Temperature Range

NOTE :

1. Operating Temperature TOPER is the case surface temperature on the center/top side of the DRAM. For measurement conditions, please refer to the JEDEC document

JESD51-2.

2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be main-

tained between 0-85°C under all operating conditions

3. Some applications require operation of the Extended Temperature Range between 85°C and 95°C case temperature. Full specifications are guaranteed in this range, but the

following additional conditions apply:

a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9us.

b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature

Range capability (MR2 A6 = 0b and MR2 A7 = 1b), in this case IDD6 current can be increased around 10~20% than normal Temperature range.

7. AC & DC Operating Conditions

7.1 Recommended DC operating Conditions (SSTL_1.5)

[ Table 6 ] Recommended DC Operating Conditions

NOTE :

1. Under all conditions VDDQ must be less than or equal to VDD.

2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.

Symbol Parameter Rating Units NOTE

VDD Voltage on VDD pin relative to Vss -0.4 V ~ 1.975 V V 1,3

VDDQ Voltage on VDDQ pin relative to Vss -0.4 V ~ 1.975 V V 1,3

VIN, VOUT Voltage on any pin relative to Vss -0.4 V ~ 1.975 V V 1

TSTG Storage Temperature -55 to +100 °C 1, 2

Symbol Parameter rating Unit NOTE

TOPER Operating Temperature Range 0 to 95 °C 1, 2, 3

Symbol Parameter Rating Units NOTE

Min. Typ. Max.

VDD Supply Voltage 1.425 1.5 1.575 V 1,2

VDDQ Supply Voltage for Output 1.425 1.5 1.575 V 1,2

- 12 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

8. AC & DC Input Measurement Levels

8.1 AC & DC Logic input levels for single-ended signals

[ Table 7 ] Single-ended AC & DC input levels for Command and Address

NOTE :

1. For input only pins except RESET, VREF = VREFCA(DC)

2. See ’Overshoot/Undershoot Specification’ on page 19.

3. The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ± 1% VDD (for reference : approx. ± 15mV)

4. For reference : approx. VDD/2 ± 15mV

5. VIH(dc) is used as a simplified symbol for VIH.CA(DC100)

6. VIL(dc) is used as a simplified symbol for VIL.CA(DC100)

7. VIH(ac) is used as a simplified symbol for VIH.CA(AC175), VIH.CA(AC150), VIH.CA(AC135) and VIH.CA(AC125); VIH.CA(AC175) value is used when VREF + 175mV is referenced

, VIH.CA(AC150) value is used when VREF + 150mV is referenced, VIH.CA(AC135) value is used when VREF + 135mV is referenced and VIH.CA(AC125) value is used when

VREF + 125mV is referenced.

8. VIL(ac) is used as a simplified symbol for VIL.CA(AC175) and VIL.CA(AC150), VIL.CA(AC135) and VIL.CA(AC125); VIL.CA(AC175) value is used when VREF - 175mV is refer-

enced, VIL.CA(AC150) value is used when VREF - 150mV is referenced, VIL.CA(AC135) value is used when VREF - 135mV is referenced and VIL.CA(AC125) value is used

when VREF - 125mV is referenced.

[ Table 8 ] Single-ended AC & DC input levels for DQ and DM

NOTE :

1. For input only pins except RESET, VREF = VREFDQ(DC)

2. See ’Overshoot/Undershoot Specification’ on page 19.

3. The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ± 1% VDD (for reference : approx. ± 15mV)

4. For reference : approx. VDD/2 ± 15mV

5. VIH(dc) is used as a simplified symbol for VIH.DQ(DC100)

6. VIL(dc) is used as a simplified symbol for VIL.DQ(DC100)

7. VIH(ac) is used as a simplified symbol for VIH.DQ(AC175), VIH.DQ(AC150) and VIH.DQ(AC135) ; VIH.DQ(AC175) value is used when VREF + 175mV is referenced,

VIH.DQ(AC150) value is used when VREF + 150mV is referenced.

8. VIL(ac) is used as a simplified symbol for VIL.DQ(AC175), VIL.DQ(AC150) ; VIL.DQ(AC175) value is used when VREF - 175mV is referenced, VIL.DQ(AC150) value is used when

VREF - 150mV is referenced.

Symbol Parameter gDDR3-1333/1600 gDDR3-1866/2133 Unit NOTE

Min. Max. Min. Max.

VIH.CA(DC100) DC input logic high VREF + 100 VDD VREF + 100 VDD mV 1,5

VIL.CA(DC100) DC input logic low VSS VREF - 100 VSS VREF - 100 mV 1,6

VIH.CA(AC175) AC input logic high VREF + 175 Note 2 - - mV 1,2,7

VIL.CA(AC175) AC input logic low Note 2 VREF - 175 --mV1,2,8

VIH.CA(AC150) AC input logic high VREF+150 Note 2 - - mV 1,2,7

VIL.CA(AC150) AC input logic low Note 2 VREF-150 --mV1,2,8

VIH.CA(AC135) AC input logic high - - VREF + 135 Note 2 mV 1,2,7

VIL.CA(AC135) AC input logic low - - Note 2 VREF - 135 mV 1,2,8

VIH.CA(AC125) AC input logic high - - VREF+125 Note 2 mV 1,2,7

VIL.CA(AC125) AC input logic low - - Note 2 VREF-125 mV 1,2,8

VREFCA(DC) Reference Voltage for ADD,

CMD inputs 0.49*VDD 0.51*VDD 0.49*VDD 0.51*VDD V3,4

Symbol Parameter gDDR3-1333/1600 gDDR3-1866/2133 Unit NOTE

Min. Max. Min. Max.

VIH.DQ(DC100) DC input logic high VREF + 100 VDD VREF + 100 VDD mV 1,5

VIL.DQ(DC100) DC input logic low VSS VREF - 100 VSS VREF - 100 mV 1,6

VIH.DQ(AC175) AC input logic high - - - - mV 1,2,7

VIL.DQ(AC175) AC input logic low - - - - mV 1,2,8

VIH.DQ(AC150) AC input logic high VREF + 150 NOTE 2 - - mV 1,2,7

VIL.DQ(AC150) AC input logic low NOTE 2 VREF - 150 --mV1,2,8

VIH.DQ(AC135) AC input logic high - - VREF + 135 NOTE 2 mV 1,2,7

VIL.DQ(AC135) AC input logic low - - NOTE 2 VREF - 135 mV 1,2,8

VREFDQ(DC) Reference Voltage for DQ,

DM inputs 0.49*VDD 0.51*VDD 0.49*VDD 0.51*VDD V3,4

- 13 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

8.2 VREF Tolerances

The dc-tolerance limits and ac-noise limits for the reference voltages VREFCA and VREFDQ are illustrate in Figure 1. It shows a valid reference voltage

VREF(t) as a function of time. (VREF stands for VREFCA and VREFDQ likewise).

VREF(DC) is the linear average of VREF(t) over a very long period of time (e.g. 1 sec). This average has to meet the min/max requirement in Table 7 on

page 12. Furthermore VREF(t) may temporarily deviate from VREF(DC) by no more than ± 1% VDD.

Figure 1. Illustration of VREF(DC) tolerance and VREF ac-noise limits

The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC) and VIL(DC) are dependent on VREF

"VREF" shall be understood as VREF(DC), as defined in Figure 1 .

This clarifies, that dc-variations of VREF affect the absolute voltage a signal has to reach to achieve a valid high or low level and therefore the time to

which setup and hold is measured. System timing and voltage budgets need to account for VREF(DC) deviations from the optimum position within the

data-eye of the input signals.

This also clarifies that the DRAM setup/hold specification and derating values need to include time and voltage associated with VREF ac-noise. Timing

and voltage effects due to ac-noise on VREF up to the specified limit (+/-1% of VDD) are included in DRAM timings and their associated deratings.

voltage

VDD

VSS

time

- 14 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

8.3 AC & DC Logic Input Levels for Differential Signals

8.3.1 Differential signals definition

Figure 2. Definition of differential ac-swing and "time above ac level" tDVAC

8.3.2 Differential swing requirement for clock (CK - CK) and strobe (DQS - DQS)

[ Table 9 ] Differential AC & DC Input Levels

NOTE :

1. Used to define a differential signal slew-rate.

2. for CK - CK use VIH/VIL(AC) of ADD/CMD and VREFCA; for DQS - DQS, DQSL - DQSL, DQSU - DQSU use VIH/VIL(AC) of DQs and VREFDQ; if a reduced ac-high or ac-low

level is used for a signal group, then the reduced level applies also here.

3. These values are not defined, however they single-ended signals CK, CK, DQS, DQS, DQSL, DQSL, DQSU, DQSU need to be within the respective limits (VIH(DC) max,

VIL(DC)min) for single-ended signals as well as the limitations for overshoot and undershoot. Refer to "overshoot and Undershoot Specification"

[ Table 10 ] Allowed time before ringback (tDVAC) for CK - CK and DQS - DQS

Symbol Parameter gDDR3-1333/1600/1866/2133 unit NOTE

min max

VIHdiff differential input high +0.2 NOTE 3 V 1

VILdiff differential input low NOTE 3 -0.2 V 1

VIHdiff(AC) differential input high ac 2 x (VIH(AC) - VREF)NOTE 3 V 2

VILdiff(AC) differential input low ac NOTE 3 2 x (VIL(AC) - VREF)V2

Slew Rate [V/ns]

tDVAC [ps] @ |VIH/Ldiff(AC)|

= 350mV

tDVAC [ps] @ |VIH/Ldiff(AC)|

= 300mV

tDVAC [ps] @ |VIH/Ldiff(AC)|

= 270mV

tDVAC [ps] @ |VIH/Ldiff(AC)|

= 250mV

min max min max min max min max

> 4.0 75 - 175 - TBD - TBD -

4.0 57 - 170 - TBD - TBD -

3.0 50 - 167 - TBD - TBD -

2.0 38 - 163 - TBD - TBD -

1.8 34 - 162 - TBD - TBD -

1.6 29 - 161 - TBD - TBD -

1.4 22 - 159 - TBD - TBD -

1.2 13 - 155 - TBD - TBD -

1.0 0 - 150 - TBD - TBD -

< 1.0 0 - 150 - TBD - TBD -

0.0

tDVAC

VIH.DIFF.MIN

half cycle

Differential Input Voltage (i.e. DQS-DQS, CK-CK)

time

tDVAC

VIH.DIFF.AC.MIN

VIL.DIFF.MAX

VIL.DIFF.AC.MAX

- 15 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

8.3.3 Single-ended requirements for differential signals

Each individual component of a differential signal (CK, DQS, DQSL, DQSU, CK, DQS, DQSL, or DQSU) has also to comply with certain requirements for

single-ended signals.

CK and CK have to approximately reach VSEHmin / VSELmax [approximately equal to the ac-levels { VIH(AC) / VIL(AC)} for ADD/CMD signals] in every

half-cycle.

DQS, DQSL, DQSU, DQS, DQSL have to reach VSEHmin / VSELmax [approximately the ac-levels { VIH(AC) / VIL(AC)} for DQ signals] in every half-cycle

proceeding and following a valid transition.

Note that the applicable ac-levels for ADD/CMD and DQ’s might be different per speed-bin etc. E.g. if VIH150(AC)/VIL150(AC) is used for ADD/CMD sig-

nals, then these ac-levels apply also for the single-ended signals CK and CK .

Figure 3. Single-ended requirement for differential signals

Note that while ADD/CMD and DQ signal requirements are with respect to VREF

, the single-ended components of differential signals have a requirement

with respect to VDD/2; this is nominally the same. The transition of single-ended signals through the ac-levels is used to measure setup time. For single-

ended components of differential signals the requirement to reach VSELmax, VSEHmin has no bearing on timing, but adds a restriction on the common

mode characteristics of these signals.

[ Table 11 ] Single-ended levels for CK, DQS, DQSL, DQSU, CK, DQS, DQSL, or DQSU

NOTE :

1. For CK, CK use VIH/VIL(AC) of ADD/CMD; for strobes (DQS, DQS, DQSL, DQSL, DQSU, DQSU) use VIH/VIL(AC) of DQs.

2. VIH(AC)/VIL(AC) for DQs is based on VREFDQ; VIH(AC)/VIL(AC) for ADD/CMD is based on VREFCA; if a reduced ac-high or ac-low level is used for a signal group, then the

reduced level applies also here

3. These values are not defined, however the single-ended signals CK, CK, DQS, DQS, DQSL, DQSL, DQSU, DQSU need to be within the respective

limits (VIH(DC) max, VIL(DC)min) for single-ended signals as well as the limitations for overshoot and undershoot. Refer to "Overshoot and Undershoot

Specification"

Symbol Parameter gDDR3-1333/1600/1866/2133 Unit NOTE

Min Max

VSEH

Single-ended high-level for strobes (VDD/2)+0.175 NOTE3 V 1, 2

Single-ended high-level for CK, CK (VDD/2)+0.175 NOTE3 V 1, 2

VSEL

Single-ended low-level for strobes NOTE3 (VDD/2)-0.175 V1, 2

Single-ended low-level for CK, CK NOTE3 (VDD/2)-0.175 V1, 2

VDD or VDDQ

VSEH min

VDD/2 or VDDQ/2

VSEL max

VSEH

VSS or VSSQ

VSEL

CK or DQS

time

- 16 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

8.4 Differential Input Cross Point Voltage

To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each cross point voltage of differential input

signals (CK, CK and DQS, DQS) must meet the requirements in below table. The differential input cross point voltage VIX is measured from the actual

cross point of true and complement signal to the mid level between of VDD and VSS.

Figure 4. VIX Definition

[ Table 12 ] Cross point voltage for differential input signals (CK, DQS)

NOTE :

1. Extended range for VIX is only allowed for clock and if single-ended clock input signals CKand CK are monotonic, have a single-ended swing VSEL / VSEH of at least VDD/2

±250 mV, and the differential slew rate of CK-CK is larger than 3 V/ ns. Refer to Table 11 on page 15 for VSEL and VSEH standard values.

2. The relation between VIX Min/Max and VSEL/VSEH should satisfy following.

(VDD/2) + VIX(Min) - VSEL ≥ 25mV

VSEH - ((VDD/2) + VIX(Max)) ≥ 25mV

8.5 Slew rate definition for Differential Input Signals

See 14.3 “Address/Command Setup, Hold and Derating :” on page 48 for single-ended slew rate definitions for address and command signals.

See 14.4 “Data Setup, Hold and Slew Rate Derating :” on page 54 for single-ended slew rate definitions for data signals.

8.6 Slew rate definitions for Differential Input Signals

Input slew rate for differential signals (CK, CK and DQS, DQS) are defined and measured as shown in Table 13 and Figure 5.

[ Table 13 ] Differential input slew rate definition

NOTE :

The differential signal (i.e. CK - CK and DQS - DQS) must be linear between these thresholds.

Figure 5. Differential Input Slew Rate definition for DQS, DQS, and CK, CK

Symbol Parameter gDDR3-1333/1600/1866/2133 Unit NOTE

Min Max

VIX Differential Input Cross Point Voltage relative to VDD/2 for CK,CK -150 150 mV 2

-175 175 mV 1

VIX Differential Input Cross Point Voltage relative to VDD/2 for DQS,DQS -150 150 mV 2

Description Measured Defined by

From To

Differential input slew rate for rising edge (CK-CK and DQS-DQS)VILdiffmax VIHdiffmin

VIHdiffmin - VILdiffmax

Delta TRdiff

Differential input slew rate for falling edge (CK-CK and DQS-DQS)VIHdiffmin VILdiffmax

VIHdiffmin - VILdiffmax

Delta TFdiff

VDD

CK, DQS

VDD/2

CK, DQS

VSS

VIX

VSEH VSEL

VIHdiffmin

VILdiffmax

delta TRdiff

delta TFdiff

- 17 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

9. AC & DC Output Measurement Levels

9.1 Single-ended AC & DC Output Levels

[ Table 14 ] Single-ended AC & DC output levels

NOTE : 1. The swing of +/-0.1 x VDDQ is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 40Ω and an effective test

load of 25Ω to VTT=VDDQ/2.

9.2 Differential AC & DC Output Levels

[ Table 15 ] Differential AC & DC output levels

NOTE : 1. The swing of +/-0.2xVDDQ is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 40Ω and an effective test

load of 25Ω to VTT=VDDQ/2 at each of the differential outputs.

9.3 Single-ended Output Slew Rate

With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between VOL(AC) and VOH(AC)

for single ended signals as shown in Table 16 and Figure 6.

[ Table 16 ] Single-ended output slew rate definition

NOTE : Output slew rate is verified by design and characterization, and may not be subject to production test.

[ Table 17 ] Single-ended output slew rate

Description : SR : Slew Rate

Q : Query Output (like in DQ, which stands for Data-in, Query-Output)

se : Single-ended Signals

For Ron = RZQ/7 setting

NOTE : 1) In two cased, a maximum slew rate of 6V/ns applies for a single DQ signal within a byte lane.

- Case_1 is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from high to low of low to high) while all remaining DQ

signals in the same byte lane are static (i.e they stay at either high or low).

- Case_2 is defined for a single DQ signals in the same byte lane are switching into the opposite direction (i.e. from low to high or high to low respectively). For the

remaining DQ signal switching into the opposite direction, the regular maximum limit of 5 V/ns applies.

Figure 6. Single-ended Output Slew Rate Definition

Symbol Parameter gDDR3-1333/1600/1866/2133 Units NOTE

VOH(DC) DC output high measurement level (for IV curve linearity) 0.8 x VDDQ V

VOM(DC) DC output mid measurement level (for IV curve linearity) 0.5 x VDDQ V

VOL(DC) DC output low measurement level (for IV curve linearity) 0.2 x VDDQ V

VOH(AC) AC output high measurement level (for output SR) VTT + 0.1 x VDDQ V1

VOL(AC) AC output low measurement level (for output SR) VTT - 0.1 x VDDQ V1

Symbol Parameter gDDR3-1333/1600/1866/2133 Units NOTE

VOHdiff(AC) AC differential output high measurement level (for output SR) +0.2 x VDDQ V1

VOLdiff(AC) AC differential output low measurement level (for output SR) -0.2 x VDDQ V1

Description Measured Defined by

From To

Single ended output slew rate for rising edge VOL(AC) VOH(AC) VOH(AC)-VOL(AC)

Delta TRse

Single ended output slew rate for falling edge VOH(AC) VOL(AC) VOH(AC)-VOL(AC)

Delta TFse

Parameter Symbol gDDR3-1333 gDDR3-1600 gDDR3-1866 gDDR3-2133 Units

Min Max Min Max Min Max Min Max

Single ended output slew rate SRQse 2.5 5 2.5 5 2.5 51) 2.5 51) V/ns

VOH(AC)

VOL(AC)

delta TRsedelta TFse

VTT

- 18 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

9.4 Differential Output Slew Rate

With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between VOLdiff(AC) and VOH-

diff(AC) for differential signals as shown in Table 18 and Figure 7.

[ Table 18 ] Differential output slew rate definition

NOTE : Output slew rate is verified by design and characterization, and may not be subject to production test.

[ Table 19 ] Differential output slew rate

Description : SR : Slew Rate

Q : Query Output (like in DQ, which stands for Data-in, Query-Output)

diff : Differential Signals

For Ron = RZQ/7 setting

Figure 7. Differential Output Slew Rate Definition

9.5 Reference Load for AC Timing and Output Slew Rate

Figure 8 represents the effective reference load of 25 ohms used in defining the relevant AC timing parameters of the device as well as output slew rate

measurements.

It is not intended as a precise representation of any particular system environment or a depiction of the actual load presented by a production tester. Sys-

tem designers should use IBIS or other simulation tools to correlate the timing reference load to a system environment. Manufacturers correlate to their

production test conditions, generally one or more coaxial transmission lines terminated at the tester electronics.

Figure 8. Reference Load for AC Timing and Output Slew Rate

Description Measured Defined by

From To

Differential output slew rate for rising edge VOLdiff(AC) VOHdiff(AC) VOHdiff(AC)-VOLdiff(AC)

Delta TRdiff

Differential output slew rate for falling edge VOHdiff(AC) VOLdiff(AC) VOHdiff(AC)-VOLdiff(AC)

Delta TFdiff

Parameter Symbol gDDR3-1333 gDDR3-1600 gDDR3-1866 gDDR3-2133 Units

Min Max Min Max Min Max Min Max

Differential output slew rate SRQdiff 5 10 5 10 5 12 5 12 V/ns

VOHdiff(AC)

VOLdiff(AC)

delta TRdiffdelta TFdiff

VTT

VDDQ

DUT

DQS

VTT = VDDQ/2

25Ω

CK/CK

Reference

Point

- 19 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

9.6 Overshoot/Undershoot Specification

9.6.1 Address and Control Overshoot and Undershoot specifications

[ Table 20 ] AC overshoot/undershoot specification for Address and Control pins (A0-A12, BA0-BA2. CS. RAS. CAS. WE. CKE, ODT)

Figure 9. Address and Control Overshoot and Undershoot Definition

9.6.2 Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications

[ Table 21 ] AC overshoot/undershoot specification for Clock, Data, Strobe and Mask (DQ, DQS, DQS, DM, CK, CK)

Figure 10. Clock, Data, Strobe and Mask Overshoot and Undershoot Definition

Parameter Specification Unit

gDDR3-1333 gDDR3-1600 gDDR3-1866 gDDR3-2133

Maximum peak amplitude allowed for overshoot area (See Figure 9) 0.4 0.4 0.4 0.4 V

Maximum peak amplitude allowed for undershoot area (See Figure 9) 0.4 0.4 0.4 0.4 V

Maximum overshoot area above VDD (See Figure 9) 0.4 0.33 0.28 0.25 V-ns

Maximum undershoot area below VSS (See Figure 9) 0.4 0.33 0.28 0.25 V-ns

Parameter Specification Unit

gDDR3-1333 gDDR3-1600 gDDR3-1866 gDDR3-2133

Maximum peak amplitude allowed for overshoot area (See Figure 10) 0.4 0.4 0.4 0.4 V

Maximum peak amplitude allowed for undershoot area (See Figure 10) 0.4 0.4 0.4 0.4 V

Maximum overshoot area above VDDQ (See Figure 10) 0.15 0.13 0.11 0.10 V-ns

Maximum undershoot area below VSSQ (See Figure 10) 0.15 0.13 0.11 0.10 V-ns

Overshoot Area

Maximum Amplitude

VDD

Undershoot Area

Maximum Amplitude

VSS

Volts

(V)

Time (ns)

Overshoot Area

Maximum Amplitude

VDDQ

Undershoot Area

Maximum Amplitude

VSSQ

Volts

(V)

Time (ns)

- 20 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

9.7 34ohm Output Driver DC Electrical Characteristics

A functional representation of the output buffer is shown below. Output driver impedance RON is defined by the value of external reference resistor RZQ

as follows:

RON34 = RZQ/7 (Nominal 34.3ohms +/- 10% with nominal RZQ=240ohm)

The individual Pull-up and Pull-down resistors (RONpu and RONpd) are defined as follows

Figure 11. Output Driver : Definition of Voltages and Currents

[ Table 22 ] Output Driver DC Electrical Characteristics, assuming RZQ=240ohms ;

entire operating temperature range ; after proper ZQ calibration

NOTE :

1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance limits if temperature or voltage changes after calibra-

tion, see following section on voltage and temperature sensitivity

2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS

3. Pull-down and pull-up output driver impedance are recommended to be calibrated at 0.5 X VDDQ. Other calibration schemes may be used to achieve the linearity spec shown

above, e.g. calibration at 0.2 X VDDQ and 0.8 X VDDQ

4. Measurement definition for mismatch between pull-up and pull-down, MMpupd: Measure RONpu and RONpd. both at 0.5 X VDDQ:

RONnom Resistor Vout Min Nom Max Units NOTE

34Ohms

RON34pd

VOLdc = 0.2 x VDDQ 0.6 1.0 1.1

RZQ/7

1,2,3

VOMdc = 0.5 x VDDQ 0.9 1.0 1.1 1,2,3

VOHdc = 0.8 x VDDQ 0.9 1.0 1.4 1,2,3

RON34pu

VOLdc = 0.2 x VDDQ 0.9 1.0 1.4 1,2,3

VOMdc = 0.5 x VDDQ 0.9 1.0 1.1 1,2,3

VOHdc = 0.8 x VDDQ 0.6 1.0 1.1 1,2,3

40Ohms

RON40pd

VOLdc = 0.2 x VDDQ 0.6 1.0 1.1

RZQ/6

1,2,3

VOMdc = 0.5 x VDDQ 0.9 1.0 1.1 1,2,3

VOHdc = 0.8 x VDDQ 0.9 1.0 1.4 1,2,3

RON40pu

VOLdc = 0.2 x VDDQ 0.9 1.0 1.4 1,2,3

VOMdc = 0.5 x VDDQ 0.9 1.0 1.1 1,2,3

VOHdc = 0.8 x VDDQ 0.6 1.0 1.1 1,2,3

Mismatch between Pull-up and Pull-down,

MMpupd VOMdc = 0.5 x VDDQ -10 10 % 1,2,4

RONpu =

VDDQ-VOUT

l Iout l

under the condition that RONpd is turned off

RONpd =

VOUT

l Iout l

under the condition that RONpu is turned off

VDDQ

VSSQ

RONPu

Ipd

RONPd

other

circuity

Output Driver

Ipu

Iout

Vout

MMpupd = RONpu - RONpd x 100

RONnom

- 21 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

9.7.1 Output Drive Temperature and Voltage Sensitivity

If temperature and/or voltage change after calibration, the tolerance limits widen according to Table 23 and Table 24.

ΔT = T - T(@calibration); ΔV = VDDQ - VDDQ (@calibration); VDD = VDDQ

*dRONdT and dRONdV are not subject to production test but are verified by design and characterization

[ Table 23 ] Output Driver Sensitivity Definition

[ Table 24 ] Output Driver Voltage and Temperature Sensitivity

9.8 On-Die Termination (ODT) Levels and I-V Characteristics

On-Die Termination effective resistance RTT is defined by bits A9, A6 and A2 of MR1 register.

ODT is applied to the DQ,DM, DQS/DQS and TDQS,TDQS (x8 devices only) pins.

A functional representation of the on-die termination is shown below. The individual pull-up and pull-down resistors (RTTpu and RTTpd) are defined as

follows :

Chip in Termination Mode

Figure 12. On-Die Termination : Definition of Voltages and Currents

Min Max Units

RONPU@VOHDC 0.6 - dRONdTH * |ΔT| - dRONdVH * |ΔV| 1.1 + dRONdTH * |ΔT| + dRONdVH * |ΔV| RZQ/7

RON@VOMDC 0.9 - dRONdTM * |ΔT| - dRONdVM * |ΔV| 1.1 + dRONdTM * |ΔT| + dRONdVM * |ΔV| RZQ/7

RONPD@VOLDC 0.6 - dRONdTL * |ΔT| - dRONdVL * |ΔV| 1.1 + dRONdTL * |ΔT| + dRONdVL * |ΔV| RZQ/7

Speed Bin gDDR3-1333 gDDR3-1600/1866/2133 Units

Min Max Min Max

dRONdTM 01.501.5

%/°C

dRONdVM 0 0.15 0 0.13 %/mV

dRONdTL 01.501.5

%/°C

dRONdVL 0 0.15 0 0.13 %/mV

dRONdTH 01.501.5

%/°C

dRONdVH 0 0.15 0 0.13 %/mV

RTTpu =

VDDQ-VOUT

l Iout l

under the condition that RTTpd is turned off

RTTpd =

VOUT

l Iout l

under the condition that RTTpu is turned off

VDDQ

VSSQ

RTT

Ipd

RTT

other

circuitry

RCV,

...

ODT

Ipu

Iout

VOUT

Iout=Ipd-Ipu

- 22 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

9.8.1 ODT DC Electrical Characteristics

Table 25 provides and overview of the ODT DC electrical characteristics. They values for RTT60pd120, RTT60pu120, RTT120pd240, RTT120pu240, RTT40pd80,

RTT40pu80, RTT30pd60, RTT30pu60, RTT20pd40, RTT20pu40 are not specification requirements, but can be used as design guide lines:

[ Table 25 ] ODT DC Electrical Characteristics, assuming RZQ=240ohm +/- 1% entire operating temperature range; after proper ZQ calibration

MR1 (A9,A6,A2) RTT RESISTOR Vout Min Nom Max Unit NOTE

(0,1,0) 120 ohm

RTT120pd240

VOL(DC) 0.2XVDDQ 0.6 1.0 1.1 RZQ 1,2,3,4

0.5XVDDQ 0.9 1.0 1.1 RZQ 1,2,3,4

VOH(DC) 0.8XVDDQ 0.9 1.0 1.4 RZQ 1,2,3,4

RTT120pu240

VOL(DC) 0.2XVDDQ 0.9 1.0 1.4 RZQ 1,2,3,4

0.5XVDDQ 0.9 1.0 1.1 RZQ 1,2,3,4

VOH(DC) 0.8XVDDQ 0.6 1.0 1.1 RZQ 1,2,3,4

RTT120 VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/2 1,2,5

(0,0,1) 60 ohm

RTT60pd240

VOL(DC) 0.2XVDDQ 0.6 1.0 1.1 RZQ/2 1,2,3,4

0.5XVDDQ 0.9 1.0 1.1 RZQ/2 1,2,3,4

VOH(DC) 0.8XVDDQ 0.9 1.0 1.4 RZQ/2 1,2,3,4

RTT60pu240

VOL(DC) 0.2XVDDQ 0.9 1.0 1.4 RZQ/2 1,2,3,4

0.5XVDDQ 0.9 1.0 1.1 RZQ/2 1,2,3,4

VOH(DC) 0.8XVDDQ 0.6 1.0 1.1 RZQ/2 1,2,3,4

RTT60 VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/4 1,2,5

(0,1,1) 40 ohm

RTT40pd240

VOL(DC) 0.2XVDDQ 0.6 1.0 1.1 RZQ/3 1,2,3,4

0.5XVDDQ 0.9 1.0 1.1 RZQ/3 1,2,3,4

VOH(DC) 0.8XVDDQ 0.9 1.0 1.4 RZQ/3 1,2,3,4

RTT40pu240

VOL(DC) 0.2XVDDQ 0.9 1.0 1.4 RZQ/3 1,2,3,4

0.5XVDDQ 0.9 1.0 1.1 RZQ/3 1,2,3,4

VOH(DC) 0.8XVDDQ 0.6 1.0 1.1 RZQ/3 1,2,3,4

RTT40 VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/6 1,2,5

(1,0,1) 30 ohm

RTT60pd240

VOL(DC) 0.2XVDDQ 0.6 1.0 1.1 RZQ/4 1,2,3,4

0.5XVDDQ 0.9 1.0 1.1 RZQ/4 1,2,3,4

VOH(DC) 0.8XVDDQ 0.9 1.0 1.4 RZQ/4 1,2,3,4

RTT60pu240

VOL(DC) 0.2XVDDQ 0.9 1.0 1.4 RZQ/4 1,2,3,4

0.5XVDDQ 0.9 1.0 1.1 RZQ/4 1,2,3,4

VOH(DC) 0.8XVDDQ 0.6 1.0 1.1 RZQ/4 1,2,3,4

RTT60 VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/8 1,2,5

(1,0,0) 20 ohm

RTT60pd240

VOL(DC) 0.2XVDDQ 0.6 1.0 1.1 RZQ/6 1,2,3,4

0.5XVDDQ 0.9 1.0 1.1 RZQ/6 1,2,3,4

VOH(DC) 0.8XVDDQ 0.9 1.0 1.4 RZQ/6 1,2,3,4

RTT60pu240

VOL(DC) 0.2XVDDQ 0.9 1.0 1.4 RZQ/6 1,2,3,4

0.5XVDDQ 0.9 1.0 1.1 RZQ/6 1,2,3,4

VOH(DC) 0.8XVDDQ 0.6 1.0 1.1 RZQ/6 1,2,3,4

RTT60 VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/12 1,2,5

Deviation of VM w.r.t VDDQ/2, ΔVM -5 5 % 1,2,5,6

- 23 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

NOTE :

1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance limits if temperature or voltage changes after calibra-

tion, see following section on voltage and temperature sensitivity

2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS

3. Pull-down and pull-up ODT resistors are recommended to be calibrated at 0.5XVDDQ. Other calibration schemes may be used to achieve the linearity spec shown above, e.g.

calibration at 0.2XVDDQ and 0.8XVDDQ.

4. Not a specification requirement, but a design guide line

5. Measurement definition for RTT:

Apply VIH(AC) to pin under test and measure current I(VIH(AC)), then apply VIL(AC) to pin under test and measure current I(VIL(AC)) respectively

6. Measurement definition for VM and ΔVM : Measure voltage (VM) at test pin (midpoint) with no load

9.8.2 ODT Temperature and Voltage sensitivity

If temperature and/or voltage change after calibration, the tolerance limits widen according to table below

ΔT = T - T(@calibration); ΔV = VDDQ - VDDQ (@calibration); VDD = VDDQ

[ Table 26 ] ODT Sensitivity Definition

[ Table 27 ] ODT Voltage and Temperature Sensitivity

NOTE : These parameters may not be subject to production test. They are verified by design and characterization.

Min Max Units

RTT 0.9 - dRTTdT * |ΔT| - dRTTdV * |ΔV| 1.6 + dRTTdT * |ΔT| + dRTTdV * |ΔV| RZQ/2,4,6,8,12

Min Max Units

dRTTdT 01.5

%/°C

dRTTdV 00.15%/mV

RTT =

VIH(AC) - VIL(AC)

I(VIH(AC)) - I(VIL(AC))

Δ VM =

2 x VM

VDDQ

x 100

- 1

- 24 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

9.9 ODT Timing Definitions

9.9.1 Test Load for ODT Timings

Different than for timing measurements, the reference load for ODT timings is defined in Figure 13.

Figure 13. ODT Timing Reference Load

9.9.2 ODT Timing Definitions

Definitions for tAON, tAONPD, tAOF, tAOFPD and tADC are provided in Table 28 and subsequent figures. Measurement reference settings are provided

in Table 29.

[ Table 28 ] ODT Timing Definitions

[ Table 29 ] Reference Settings for ODT Timing Measurements

Symbol Begin Point Definition End Point Definition Figure

tAON Rising edge of CK - CK defined by the end point of ODTLon Extrapolated point at VSSQ Figure 14

tAONPD Rising edge of CK - CK with ODT being first registered high Extrapolated point at VSSQ Figure 15

tAOF Rising edge of CK - CK defined by the end point of ODTLoff End point: Extrapolated point at VRTT_Nom Figure 16

tAOFPD Rising edge of CK - CK with ODT being first registered low End point: Extrapolated point at VRTT_Nom Figure 17

tADC Rising edge of CK - CK defined by the end point of ODTLcnw,

ODTLcwn4 of ODTLcwn8

End point: Extrapolated point at VRTT_Wr and VRTT_Nom

respectively Figure 18

Measured

Parameter RTT_Nom Setting RTT_Wr Setting VSW1[V] VSW2[V] NOTE

tAON RZQ/4 NA 0.05 0.10

RZQ/12 NA 0.10 0.20

tAONPD RZQ/4 NA 0.05 0.10

RZQ/12 NA 0.10 0.20

tAOF RZQ/4 NA 0.05 0.10

RZQ/12 NA 0.10 0.20

tAOFPD RZQ/4 NA 0.05 0.10

RZQ/12 NA 0.10 0.20

tADC RZQ/12 RZQ/2 0.20 0.30

VDDQ

CK,CK

DUT DQ, DM

DQS , DQS

TDQS , TDQS RTT

=25 ohm

VTT=

VSSQ

Timing Reference Points

VSSQ

- 25 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

Figure 14. Definition of tAON

Figure 15. Definition of tAONPD

Figure 16. Definition of tAOF

Begin point : Rising edge of CK - CK

defined by the end point of ODTLon

AON

DQ, DM

DQS , DQS

TDQS , TDQS V

SSQ

SW1

SW2

SW1

SW2

End point Extrapolated point at V

SSQ

Begin point : Rising edge of CK - CK

with ODT being first registered high

AONPD

DQ, DM

DQS , DQS

TDQS , TDQS V

SSQ

SW1

SW2

SW1

SW2

End point Extrapolated point at V

SSQ

Begin point : Rising edge of CK - CK

defined by the end point of ODTLoff

AOF

DQ, DM

DQS , DQS

TDQS , TDQS

RTT_Nom

SW1

SW2

SW1

SW2

End point Extrapolated point at V

RTT_Nom

SSQ

TD_TAON_DEF

- 26 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

Figure 17. Definition of tAOFPD

Figure 18. Definition of tADC

Begin point : Rising edge of CK - CK

with ODT being first registered low

AOFPD

DQ, DM

DQS , DQS

TDQS , TDQS

RTT_Nom

SW1

SW2

SW1

SW2

End point Extrapolated point at V

RTT_Nom

SSQ

Begin point : Rising edge of CK - CK

defined by the end point of ODTLcnw

ADC

DQ, DM

DQS , DQS

TDQS , TDQS

RTT_Nom

SW11

SW21

SW1

End point Extrapolated point at V

RTT_Nom

RTT_Wr

End point Extrapolated point at V

RTT_Wr

ADC

SW2

Begin point : Rising edge of CK - CK defined by

the end point of ODTLcwn4 or ODTLcwn8

End point

Extrapolated point

at V

RTT_Nom

SW12

SW22

RTT_Nom

SSQ

- 27 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

10. IDD Current Measure Method

10.1 IDD Measurement Conditions

In this chapter, IDD and IDDQ measurement conditions such as test load and patterns are defined. Figure 19 shows the setup and test load for IDD and

IDDQ measurements.

- IDD currents (such as IDD0, IDD1, IDD2N, IDD2NT, IDD2P0, IDD2P1, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, IDD5B, IDD6, IDD6ET, IDD6TC and

IDD7) are measured as time-averaged currents with all VDD balls of the gDDR3 SDRAM under test tied together. Any IDDQ current is not included in

IDD currents.

- IDDQ currents (such as IDDQ2NT and IDDQ4R) are measured as time-averaged currents with all VDDQ balls of the gDDR3 SDRAM under test tied

together. Any IDD current is not included in IDDQ currents.

Attention : IDDQ values cannot be directly used to calculate IO power of the gDDR3 SDRAM. They can be used to support correlation of simulated IO

power to actual IO power as outlined in Figure 20. In DRAM module application, IDDQ cannot be measured separately since VDD and VDDQ

are using one merged-power layer in Module PCB.

For IDD and IDDQ measurements, the following definitions apply :

- "0" and "LOW" is defined as VIN <= VILAC(max).

- "1" and "HIGH" is defined as VIN >= VIHAC(min).

- "FLOATING" is defined as inputs are VREF = VDD / 2.

- "Timing used for IDD and IDDQ Measured - Loop Patterns" are provided in Table 30

- "Basic IDD and IDDQ Measurement Conditions" are described in Table 31

- Detailed IDD and IDDQ Measurement-Loop Patterns are described in Table 32 on page 31 through Table 39.

- IDD Measurements are done after properly initializing the gDDR3 SDRAM. This includes but is not limited to setting

RON = RZQ/7 (34 Ohm in MR1);

Qoff = 0B (Output Buffer enabled in MR1);

RTT_Nom = RZQ/6 (40 Ohm in MR1);

RTT_Wr = RZQ/2 (120 Ohm in MR2);

TDQS Feature disabled in MR1

- Attention : The IDD and IDDQ Measurement-Loop Patterns need to be executed at least one time before actual IDD or IDDQ measurement is started.

- Define D = {CS, RAS, CAS, WE} := {HIGH, LOW, LOW, LOW}

- Define D = {CS, RAS, CAS, WE} := {HIGH, HIGH, HIGH, HIGH}

- RESET Stable time is : During a Cold Bood RESET (Initialization), current reading is valid once power is stable and RESET has been LOW for 1ms;

During Warm Boot RESET(while operating), current reading is valid after RESET has been LOW for 200ns + tRFC

[ Table 30 ] Timing used for IDD and IDDQ Measured - Loop Patterns

Parameter Bin gDDR3-1333 gDDR3-1600 gDDR3-1866 gDDR3-2133 Unit

9-9-9 11-11-11 13-13-13 14-14-14

tCKmin(IDD) 1.5 1.25 1.07 0.935 ns

CL(IDD) 9 11 13 14 nCK

tRCDmin(IDD) 9 11 13 14 nCK

tRCmin(IDD) 33 39 45 50 nCK

tRASmin(IDD) 24 28 32 36 nCK

tRPmin(IDD) 9 11 13 14 nCK

tFAW(IDD) 30 32 33 38 nCK

tRRD(IDD) 5 6 6 7 nCK

tRFC(IDD) - 512Mb 60 72 85 97 nCK

tRFC(IDD) - 1Gb 74 88 103 118 nCK

tRFC(IDD) - 2Gb 107 128 150 172 nCK

tRFC(IDD) - 4Gb 200 240 281 321 nCK

tRFC(IDD) - 8Gb 234 280 328 375 nCK

- 28 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

Figure 19. Measurement Setup and Test Load for IDD and IDDQ Measurements

Figure 20. Correlation from simulated Channel IO Power to actual Channel IO Power supported by IDDQ Measurement.

DDQ

RESET

CK/CK

CKE

RAS, CAS, WE

A, BA

ODT

SSQ

DQS, DQS

DQ, DM,

TDQS, TDQS

DDQ

= 25 Ohm

[

NOTE

: DIMM level Output test load condition may be different from above]

Application specific

memory channel

environment

Channel

IO Power

Simulation

IDDQ

Measurement

Correlation

Correction

Channel IO Power

Number

IDDQ

Test Load

IDDQ

Simulation

- 29 -
datasheet gDDR3 SDRAM
Rev. 1.1
K4W1G1646G
[ Table 31 ] Basic IDD and IDDQ Measurement Conditions
Symbol Description
IDD0 
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, CL: see Table 30 on page 27 ; BL: 81); AL: 0; CS: High between ACT and PRE; Command, Address, 
Bank Address Inputs: partially toggling according to Table 32 on page 31 ; Data IO: FLOATING; DM:stable at 0; Bank Activity: Cycling with one bank active 
at a time: 0,0,1,1,2,2,... (see Table 32); Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: stable at 0; Pattern Details: see Table 32
IDD1
Operating One Bank Active-Read-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Table 30 on page 27 ; BL: 81); AL: 0; CS: High between ACT, RD and PRE; Command, 
Address, Bank Address Inputs, Data IO: partially toggling according to Table 33 on page 32 ; DM:stable at 0; Bank Activity: Cycling with one bank active at 
a time: 0,0,1,1,2,2,... (see Table 33); Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: stable at 0; Pattern Details: see Table 33
IDD2N
Precharge Standby Current
CKE: High; External clock: On; tCK, CL: see Table 30 on page 27 ; BL: 81); AL: 0; CS: stable at 1; Command, Address, Bank Address Inputs: partially tog-
gling according to Table 34 on page 32 ; Data IO: FLOATING; DM:stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode 
Registers2); ODT Signal: stable at 0; Pattern Details: see Table 34
IDD2NT
Precharge Standby ODT Current
CKE: High; External clock: On; tCK, CL: see Table 30 on page 27 ; BL: 81); AL: 0; CS: stable at 1; Command, Address, Bank Address Inputs: partially tog-
gling according to Table 35 on page 33 ; Data IO: FLOATING;DM:stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode 
Registers2); ODT Signal: toggling according to Table 35 ; Pattern Details: see Table 35
IDDQ2NT Precharge Standby ODT IDDQ Current
Same definition like for IDD2NT, however measuring IDDQ current instead of IDD current
IDD2P0 
Precharge Power-Down Current Slow Exit
CKE: Low; External clock: On; tCK, CL: see Table 30 on page 27 ; BL: 81); AL: 0; CS: stable at 1; Command, Address, Bank Address Inputs: stable at 0; 
Data IO: FLOATING; DM:stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: stable at 0; Pre-
charge Power Down Mode: Slow Exi3)
IDD2P1 
Precharge Power-Down Current Fast Exit
CKE: Low; External clock: On; tCK, CL: see Table 30 on page 27; BL: 81); AL: 0; CS: stable at 1;  Command, Address, Bank Address Inputs: stable at 0; 
Data IO: FLOATING; DM:stable at 0; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: stable at 0; Pre-
charge Power Down Mode: Fast Exit3)
IDD2Q 
Precharge Quiet Standby Current
CKE: High; External clock: On; tCK, CL: see Table 30 on page 27 ; BL: 81); AL: 0; CS: stable at 1; Command, Address, Bank Address Inputs: stable at 0; 
Data IO: FLOATING; DM:stable at 0;Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: stable at 0
IDD3N 
Active Standby Current
CKE: High; External clock: On; tCK, CL: see Table 30 on page 27 ; BL: 81); AL: 0; CS: stable at 1; Command, Address, Bank Address Inputs: partially tog-
gling according to Table 34 on page 32 ; Data IO: FLOATING; DM:stable at 0;Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode 
Registers2); ODT Signal: stable at 0; Pattern Details: see Table 34
IDD3P
Active Power-Down Current
CKE: Low; External clock: On; tCK, CL: see Table 30 on page 27 ; BL: 81); AL: 0; CS: stable at 1; Command, Address, Bank Address Inputs: stable at 0; 
Data IO: FLOATING;DM:stable at 0; Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: stable at 0
IDD4R
Operating Burst Read Current
CKE: High; External clock: On; tCK, CL: see Table 30 on page 27 ; BL: 81); AL: 0; CS: High between RD; Command, Address, Bank Address Inputs: par-
tially toggling according to Table 36 on page 33 ; Data IO: seamless read data burst with different data between one burst and the next one according to 
Table 36 ; DM:stable at 0; Bank Activity: all banks open, RD commands cycling through banks: 0,0,1,1,2,2,... (see Table 7 on page 12); Output Buffer and 
RTT: Enabled in Mode Registers2); ODT Signal: stable at 0; Pattern Details: see Table 36
IDDQ4R Operating Burst Read IDDQ Current
Same definition like for IDD4R, however measuring IDDQ current instead of IDD current
IDD4W
Operating Burst Write Current
CKE: High; External clock: On; tCK, CL: see Table 30 on page 27 ; BL: 81); AL: 0; CS: High between WR; Command, Address, Bank Address Inputs: par-
tially toggling according to Table 37 on page 34 ; Data IO: seamless write data burst with different data between one burst and the next one according to 
Table 37; DM: stable at 0; Bank Activity: all banks open, WR commands cycling through banks: 0,0,1,1,2,2,... (see Table 37); Output Buffer and RTT: 
Enabled in Mode Registers2); ODT Signal: stable at HIGH; Pattern Details: see Table 37
IDD5B
Burst Refresh Current
CKE: High; External clock: On; tCK, CL, nRFC: see Table 30 on page 27 ; BL: 81); AL: 0; CS: High between REF; Command, Address, Bank Address 
Inputs: partially toggling according to Table 38 on page 34 ; Data IO: FLOATING;DM:stable at 0; Bank Activity: REF command every nRFC (see Table 38); 
Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: stable at 0; Pattern Details: see Table 38
IDD6
Self Refresh Current: Normal Temperature Range
TCASE: 0 - 85°C; Auto Self-Refresh (ASR): Disabled4); Self-Refresh Temperature Range (SRT): Normale); CKE: Low; External clock: Off; CK and CK: 
LOW; CL: see Table 30 on page 27 ; BL: 81); AL: 0; CS, Command, Address, Bank Address, Data IO: FLOATING;DM:stable at 0; Bank Activity: Self-
Refresh operation; Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: FLOATING

- 30 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 31 ] Basic IDD and IDDQ Measurement Conditions

NOTE :

1) Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00B

2) Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2] = 011B; RTT_Wr enable: set MR2 A[10,9] = 10B

3) Precharge Power Down Mode: set MR0 A12=0B for Slow Exit or MR0 A12=1B for Fast Exit

4) Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable or 1B to enable feature

5) Self-Refresh Temperature Range (SRT): set MR2 A7=0B for normal or 1B for extended temperature range

6) Read Burst type : Nibble Sequential, set MR0 A[3]=0B

Symbol Description

IDD7

Operating Bank Interleave Read Current

CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: see Table 30 on page 27 ; BL: 81); AL: CL-1; CS: High between ACT and RDA;

Command, Address, Bank Address Inputs: partially toggling according to Table 39 on page 35 ; Data IO: read data bursts with different data between one

burst and the next one according to Table 39 ; DM:stable at 0; Bank Activity: two times interleaved cycling through banks (0, 1, ...7) with different addressing,

see Table 39 ; Output Buffer and RTT: Enabled in Mode Registers2); ODT Signal: stable at 0; Pattern Details: see Table 39

IDD8

RESET Low Current

RESET : Low; External clock : off; CK and CK : LOW; CKE : FLOATING ; CS, Command, Address, Bank Address, Data IO : FLOATING ; ODT Signal :

FLOATING

- 31 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 32 ] IDD0 Measurement - Loop Pattern1)

NOTE :

1. DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.

2. DQ signals are MID-LEVEL.

CK/CK

CKE

Sub-Loop

Cycle

Number

Command

RAS

CAS

ODT

BA[2:0]

A[15:11]

A[10]

A[9:7]

A[6:3]

A[2:0]

Data2)

toggling

Static High

0 0 ACT001100000000 -

1,2 D, D100000000000 -

3,4 D, D 111100000000 -

... repeat pattern 1...4 until nRAS - 1, truncate if necessary

nRAS PRE001000000000 -

... repeat pattern 1...4 until nRC - 1, truncate if necessary

1*nRC + 0 ACT00110000 0 0 F0-

1*nRC + 1, 2 D, D10000000 0 0 F0-

1*nRC + 3, 4 D, D 11110000 0 0 F0-

... repeat pattern 1...4 until 1*nRC + nRAS - 1, truncate if necessary

1*nRC + nRASPRE00100000 0 0 F0

... repeat 1...4 until 2*nRC - 1, truncate if necessary

1 2*nRC repeat Sub-Loop 0, use BA[2:0] = 1 instead

2 4*nRC repeat Sub-Loop 0, use BA[2:0] = 2 instead

3 6*nRC repeat Sub-Loop 0, use BA[2:0] = 3 instead

4 8*nRC repeat Sub-Loop 0, use BA[2:0] = 4 instead

5 10*nRC repeat Sub-Loop 0, use BA[2:0] = 5 instead

6 12*nRC repeat Sub-Loop 0, use BA[2:0] = 6 instead

7 14*nRC repeat Sub-Loop 0, use BA[2:0] = 7 instead

- 32 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 33 ] IDD1 Measurement - Loop Pattern1)

NOTE :

1. DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL.

2. Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.

[ Table 34 ] IDD2 and IDD3N Measurement - Loop Pattern1)

NOTE :

1. DM must be driven Low all the time. DQS, DQS are MID-LEVEL.

2. DQ signals are MID-LEVEL.

CK/CK

CKE

Sub-Loop

Cycle

Number

Command

RAS

CAS

ODT

BA[2:0]

A[15:11]

A[10]

A[9:7]

A[6:3]

A[2:0]

Data2)

toggling

Static High

0 0 ACT 001100000000 -

1,2 D, D 100000000000 -

3,4 D, D 111100000000 -

... repeat pattern 1...4 until nRCD- 1, truncate if necessary

nRCD RD 010100000000 00000000

... repeat pattern 1...4 until nRAS - 1, truncate if necessary

nRAS PRE 001000000000 -

... repeat pattern 1...4 until nRC - 1, truncate if necessary

1*nRC+0 ACT 00110000 0 0 F0-

1*nRC + 1, 2 D, D 10000000 0 0 F0-

1*nRC + 3, 4 D, D 11110000 0 0 F0-

... repeat pattern nRC + 1,..., 4 until nRC + nRCD - 1, truncate if necessary

1*nRC + nRCD RD 01010000 0 0 F0 00110011

... repeat pattern nRC + 1,..., 4 until nRC +nRAS - 1, truncate if necessary

1*nRC + nRAS PRE 00100000 0 0 F0-

... repeat pattern nRC + 1,..., 4 until 2 * nRC - 1, truncate if necessary

1 2*nRC repeat Sub-Loop 0, use BA[2:0] = 1 instead

2 4*nRC repeat Sub-Loop 0, use BA[2:0] = 2 instead

3 6*nRC repeat Sub-Loop 0, use BA[2:0] = 3 instead

4 8*nRC repeat Sub-Loop 0, use BA[2:0] = 4 instead

5 10*nRC repeat Sub-Loop 0, use BA[2:0] = 5 instead

6 12*nRC repeat Sub-Loop 0, use BA[2:0] = 6 instead

7 14*nRC repeat Sub-Loop 0, use BA[2:0] = 7 instead

CK/CK

CKE

Sub-Loop

Cycle

Number

Command

RAS

CAS

ODT

BA[2:0]

A[15:11]

A[10]

A[9:7]

A[6:3]

A[2:0]

Data2)

toggling

Static High

0 0 D 100000000000 -

1 D 100000000000 -

11110000 0 0 F0-

1 4-7 repeat Sub-Loop 0, use BA[2:0] = 1 instead

2 8-11 repeat Sub-Loop 0, use BA[2:0] = 2 instead

3 12-15 repeat Sub-Loop 0, use BA[2:0] = 3 instead

4 16-19 repeat Sub-Loop 0, use BA[2:0] = 4 instead

5 20-23 repeat Sub-Loop 0, use BA[2:0] = 5 instead

6 24-27 repeat Sub-Loop 0, use BA[2:0] = 6 instead

7 28-31 repeat Sub-Loop 0, use BA[2:0] = 7 instead

- 33 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 35 ] IDD2NT and IDDQ2NT Measurement - Loop Pattern1)

NOTE :

1. DM must be driven Low all the time. DQS, DQS are MID-LEVEL.

2. DQ signals are MID-LEVEL.

[ Table 36 ] IDD4R and IDDQ4R Measurement - Loop Pattern1)

NOTE :

1. DM must be driven LOW all the time. DQS, DQS are used according to WR Commands, otherwise MID-LEVEL.

2. Burst Sequence driven on each DQ signal by Write Command. Outside burst operation, DQ signals are MID-LEVEL.

CK/CK

CKE

Sub-Loop

Cycle

Number

Command

RAS

CAS

ODT

BA[2:0]

A[15:11]

A[10]

A[9:7]

A[6:3]

A[2:0]

Data2)

toggling

Static High

0 0 D 100000000000 -

1 D 100000000000

11110000 0 0 F0

1 4-7 repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 1

2 8-11 repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 2

3 12-15 repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 3

4 16-19 repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 4

5 20-23 repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 5

6 24-27 repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 6

7 28-31 repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 7

CK/CK

CKE

Sub-Loop

Cycle

Number

Command

RAS

CAS

ODT

BA[2:0]

A[15:11]

A[10]

A[9:7]

A[6:3]

A[2:0]

Data2)

toggling

Static High

0 0 RD 010100000000 00000000

1 D 100000000000 -

2,3 D,D 111100000000 -

4 RD 01010000 0 0 F0 00110011

5 D 10000000 0 0 F0-

6,7 D,D 11110000 0 0 F0-

1 8-15 repeat Sub-Loop 0, but BA[2:0] = 1

2 16-23 repeat Sub-Loop 0, but BA[2:0] = 2

3 24-31 repeat Sub-Loop 0, but BA[2:0] = 3

4 32-39 repeat Sub-Loop 0, but BA[2:0] = 4

5 40-47 repeat Sub-Loop 0, but BA[2:0] = 5

6 48-55 repeat Sub-Loop 0, but BA[2:0] = 6

7 56-63 repeat Sub-Loop 0, but BA[2:0] = 7

- 34 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 37 ] IDD4W Measurement - Loop Pattern1)

NOTE :

1. DM must be driven LOW all the time. DQS, DQS are used according to WR Commands, otherwise MID-LEVEL.

2. Burst Sequence driven on each DQ signal by Write Command. Outside burst operation, DQ signals are MID-LEVEL.

[ Table 38 ] IDD5B Measurement - Loop Pattern1)

NOTE :

1. DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.

2. DQ signals are MID-LEVEL.

CK/CK

CKE

Sub-Loop

Cycle

Number

Command

RAS

CAS

ODT

BA[2:0]

A[15:11]

A[10]

A[9:7]

A[6:3]

A[2:0]

Data2)

toggling

Static High

0 0 WR 010010000000 00000000

1 D 100010000000 -

2,3 D,D 111110000000 -

4 WR 01001000 0 0 F0 00110011

5 D 10001000 0 0 F0-

6,7 D,D 11111000 0 0 F0-

1 8-15 repeat Sub-Loop 0, but BA[2:0] = 1

2 16-23 repeat Sub-Loop 0, but BA[2:0] = 2

3 24-31 repeat Sub-Loop 0, but BA[2:0] = 3

4 32-39 repeat Sub-Loop 0, but BA[2:0] = 4

5 40-47 repeat Sub-Loop 0, but BA[2:0] = 5

6 48-55 repeat Sub-Loop 0, but BA[2:0] = 6

7 56-63 repeat Sub-Loop 0, but BA[2:0] = 7

CK/CK

CKE

Sub-Loop

Cycle

Number

Command

RAS

CAS

ODT

BA[2:0]

A[15:11]

A[10]

A[9:7]

A[6:3]

A[2:0]

Data2)

toggling

Static High

0 0 REF 000100000000 -

1 1,2 D 100000000000 -

3,4 D,D 11110000 0 0 F 0 -

5...8 repeat cycles 1...4, but BA[2:0] = 1

9...12 repeat cycles 1...4, but BA[2:0] = 2

13...16 repeat cycles 1...4, but BA[2:0] = 3

17...20 repeat cycles 1...4, but BA[2:0] = 4

21...24 repeat cycles 1...4, but BA[2:0] = 5

25...28 repeat cycles 1...4, but BA[2:0] = 6

29...32 repeat cycles 1...4, but BA[2:0] = 7

2 33...nRFC - 1 repeat Sub-Loop 1, until nRFC - 1. Truncate, if necessary.

- 35 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 39 ] IDD7 Measurement - Loop Pattern1)

NOTE :

1. DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL.

2. Burst Sequence driven on each DQ signal by Read Command. Outside burst operation. DQ signals are MID-LEVEL.

CK/CK

CKE

Sub-Loop

Cycle

Number

Command

RAS

CAS

ODT

BA[2:0]

A[15:11]

A[10]

A[9:7]

A[6:3]

A[2:0]

Data2)

toggling

Static High

0 ACT 00110000 0 0 00-

1 RDA 01010000 1 0 00 00000000

2 D 10000000 0 0 00-

... repeat above D Command until nRRD - 1

nRRD ACT 00110100 0 0 F0-

nRRD + 1 RDA 01010100 1 0 F0 00110011

nRRD + 2 D 10000100 0 0 F0-

... repeat above D Command until 2*nRRD-1

2 2 * nRRD repeat Sub-Loop 0, but BA[2:0] = 2

3 3 * nRRD repeat Sub-Loop 1, but BA[2:0] = 3

44 * nRRD D 10000300 0 0 F0-

Assert and repeat above D Command until nFAW - 1, if necessary

5 nFAW repeat Sub-Loop 0, but BA[2:0] = 4

6 nFAW+nRRD repeat Sub-Loop 1, but BA[2:0] = 5

7 nFAW+2*nRRD repeat Sub-Loop 0, but BA[2:0] = 6

8 nFAW+3*nRRD repeat Sub-Loop 1, but BA[2:0] = 7

9 nFAW+4*nRRD D 10000700 0 0 F0-

Assert and repeat above D Command until 2*nFAW - 1, if necessary

2*nFAW+0 ACT 00110000 0 0 F0-

2*nFAW+1 RDA 01010000 1 0 F0 00110011

2*nFAW+2 D 10000000 0 0 F0-

Repeat above D Command until 2*nFAW + nRRD - 1

2*nFAW+nRRD ACT 00110100 0 0 00-

2*nFAW+nRRD+1 RDA 01010100 1 0 00 00000000

2*nFAW+nRRD+2 D 10000100 0 0 00-

Repeat above D Command until 2*nFAW + 2*nRRD - 1

12 2*nFAW+2*nRRD repeat Sub-Loop 10, but BA[2:0] = 2

13 2*nFAW+3*nRRD repeat Sub-Loop 11, but BA[2:0] = 3

14 2*nFAW+4*nRRD D 10000300 0 0 00-

Assert and repeat above D Command until 3*nFAW - 1, if necessary

15 3*nFAW repeat Sub-Loop 10, but BA[2:0] = 4

16 3*nFAW+nRRD repeat Sub-Loop 11, but BA[2:0] = 5

17 3*nFAW+2*nRRD repeat Sub-Loop 10, but BA[2:0] = 6

18 3*nFAW+3*nRRD repeat Sub-Loop 11, but BA[2:0] = 7

19 3*nFAW+4*nRRD D 10000700 0 0 00-

Assert and repeat above D Command until 4*nFAW - 1, if necessary

- 36 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

11. 1Gb gDDR3 SDRAM G-die IDD Specification Table

[ Table 40 ] IDD Specification for 1Gb gDDR3 G-die

Symbol

64Mx16 (K4W1G1646G)

Unit NOTEgDDR3-1333 gDDR3-1600 gDDR3-1866 gDDR3-2133 gDDR3-2400

9-9-9 11-11-11 13-13-13 14-14-14 16-16-16

IDD0 45 45 50 55 TBD mA

IDD1 60 65 70 75 TBD mA

IDD2P0(slow exit)10101010TBDmA

IDD2P1(fast exit)12121212TBDmA

IDD2N15152020TBDmA

IDD2NT 25 25 25 27 TBD mA

IDDQ2NT 145 145 145 145 TBD mA

IDD2Q15152020TBDmA

IDD3P20202020TBDmA

IDD3N25253030TBDmA

IDD4R 120 135 150 170 TBD mA

IDDQ4R 105 105 105 105 TBD mA

IDD4W 110 120 140 155 TBD mA

IDD5B 90 95 105 120 TBD mA

IDD6 10 10 10 10 TBD mA

IDD7 170 195 195 210 TBD mA

IDD8 10 10 10 10 TBD mA

- 37 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

12. Thermal Characteristics Table

(1333Mbps/1600Mbps/1866Mbps/2133Mbps at VDD=1.5V + 0.075V, VDDQ=1.5V + 0.075V)

NOTE :

1. Measurement procedures for each parameter must follow standard procedures defined in the current JEDEC JESD-51 standard.

2. Theta_JA and Theta_JB must be measured with the high effective thermal conductivity test board defined in JESD51-7

3. Airflow information must be documented for Theta JA.

4. Max_Tj and Max_Tc are documented for normal operation in this table. These are not intended to reflect reliablility limits.

5. Theta_JA should only be used for comparing the thermal performance of single packages and not for system related junction.

6. Theta_JB and Theta_JC are derived through a package thermal simulation and measurement.

Parameter Description Value Units NOTE

Theta_JA Thermal resistance junction to ambient 33.9 °C/W Thermal measurement : 1,2,3,5

Max_Tj Maximum operating junction temperature

30.9

31.4

32.5

33.3

°C

1.333Gbps@Max 1.575V(Pd=0.173W)

1.6Gbps@Max 1.575V(Pd=0.0.189W)

1.866Gbps@Max 1.575V(Pd=0.221W)

2.133Gbps@Max 1.575V(Pd=0.244W)

Max_Tc Maximum operating case temperature

29.6

30.0

30.8

31.4

°C

1.333Gbps@Max 1.575V

1.6Gbps@Max 1.575V

1.866Gbps@Max 1.575V

2.133Gbps@Max 1.575V

Theta_Jc Thermal resistance junction to case 7.6 °C/W Thermal measurement : 1, 6

Theta_JB Thermal resistance junction to board 13.4 °C/W Thermal simulation : 1, 2, 6

- 38 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

13. Input/Output Capacitance

[ Table 41 ] Input/Output Capacitance

NOTE :

1. Although the DM, TDQS and TDQS pins have different functions, the loading matches DQ and DQS

2. This parameter is not subject to production test. It is verified by design and characterization.

The capacitance is measured according to JEP147("PROCEDURE FOR MEASURING INPUT CAPACITANCE USING A VECTOR NETWORK ANALYZER( VNA)") with

VDD, VDDQ, VSS, VSSQ applied and all other pins floating (except the pin under test, CKE, RESET and ODT as necessary). VDD=VDDQ=1.5V, VBIAS=VDD/2 and on-die

termination off.

3. This parameter applies to monolithic devices only; stacked/dual-die devices are not covered here

4. Absolute value of CCK-CCK

5. Absolute value of CIO(DQS)-CIO(DQS)

6. CI applies to ODT, CS, CKE, A0-A15, BA0-BA2, RAS, CAS, WE.

7. CDI_CTRL applies to ODT, CS and CKE

8. CDI_CTRL=CI(CTRL)-0.5*(CI(CLK)+CI(CLK))

9. CDI_ADD_CMD applies to A0-A15, BA0-BA2, RAS, CAS and WE

10. CDI_ADD_CMD=CI(ADD_CMD) - 0.5*(CI(CLK)+CI(CLK))

11. CDIO=CIO(DQ,DM) - 0.5*(CIO(DQS)+CIO(DQS))

12. Maximum external load capacitance on ZQ pin: 5pF

Parameter Symbol gDDR3-1333 gDDR3-1600 gDDR3-1866 gDDR3-2133 Units NOTE

Min Max Min Max Min Max Min Max

Input/output capacitance

(DQ, DM, DQS, DQS, TDQS, TDQS)CIO 1.5 2.5 1.5 2.3 1.4 2.2 1.4 2.1 pF 1,2,3

Input capacitance

(CK and CK) CCK 0.8 1.4 0.8 1.4 0.8 1.3 0.8 1.3 pF 2,3

Input capacitance delta

(CK and CK) CDCK 0 0.15 0 0.15 0 0.15 0 0.15 pF 2,3,4

Input capacitance

(All other input-only pins) CI 0.75 1.3 0.75 1.3 0.75 1.2 0.75 1.2 pF 2,3,5

Input capacitance delta

(DQS and DQS) CDDQS 0 0.15 0 0.15 0 0.15 0 0.15 pF 2,3,6

Input capacitance delta

(All control input-only pins) CDI_CTRL -0.4 0.2 -0.4 0.2 -0.4 0.2 -0.4 0.2 pF 2,3,7,8

Input capacitance delta

(all ADD and CMD input-only pins) CDI_ADD_CMD -0.4 0.4 -0.4 0.4 -0.4 0.4 -0.4 0.4 pF 2,3,9,10

Input/output capacitance delta

(DQ, DM, DQS, DQS, TDQS, TDQS)CDIO -0.5 0.3 -0.5 0.3 -0.5 0.3 -0.5 0.3 pF 2,3,11

Input/output capacitance of ZQ pin CZQ - 3 - 3 - 3 - 3 pF 2, 3, 12

- 39 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

14. Electrical Characteristics and AC timing for gDDR3-1333 to gDDR3-2133

14.1 Clock Specification

The jitter specified is a random jitter meeting a Gaussian distribution. Input clocks violating the min/max values may result in malfunction of the gDDR3

SDRAM device.

14.1.1 Definition for tCK(avg)

tCK(avg) is calculated as the average clock period across any consecutive 200 cycle window, where each clock period is calculated from rising edge to

rising edge.

14.1.2 Definition for tCK(abs)

tCK(abs) is defined as the absolute clock period, as measured from one rising edge to the next consecutive rising edge. tCK(abs) is not subject to produc-

tion test.

14.1.3 Definition for tCH(avg) and tCL(avg)

tCH(avg) is defined as the average high pulse width, as calculated across any consecutive 200 high pulses:

tCL(avg) is defined as the average low pulse width, as calculated across any consecutive 200 low pulses:

14.1.4 Definition for note for tJIT(per), tJIT(per, Ick)

tJIT(per) is defined as the largest deviation of any single tCK from tCK(avg). tJIT(per) = min/max of {tCKi-tCK(avg) where i=1 to 200}

tJIT(per) defines the single period jitter when the DLL is already locked.

tJIT(per,lck) uses the same definition for single period jitter, during the DLL locking period only.

tJIT(per) and tJIT(per,lck) are not subject to production test.

14.1.5 Definition for tJIT(cc), tJIT(cc, Ick)

tJIT(cc) is defined as the absolute difference in clock period between two consecutive clock cycles: tJIT(cc) = Max of {tCKi+1-tCKi}

tJIT(cc) defines the cycle to cycle jitter when the DLL is already locked.

tJIT(cc,lck) uses the same definition for cycle to cycle jitter, during the DLL locking period only.

tJIT(cc) and tJIT(cc,lck) are not subject to production test.

14.1.6 Definition for tERR(nper)

tERR is defined as the cumulative error across n multiple consecutive cycles from tCK(avg). tERR is not subject to production test.

j=1

tCKj NN=200

∑

j=1

tCHj N x tCK(avg) N=200

j=1

tCLj N x tCK(avg) N=200

∑

- 40 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

14.2 Refresh Parameters by Device Density

[ Table 42 ] Refresh parameters by device density

NOTE :

1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if gDDR3 SDRAM devices support the following options or requirements referred to

in this material.

14.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin

gDDR3 SDRAM Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.

[ Table 43 ] gDDR3-1333 Speed Bins

Parameter Symbol 1Gb 2Gb 4Gb 8Gb Units NOTE

All Bank Refresh to active/refresh cmd time tRFC 110 160 300 350 ns

Average periodic refresh interval tREFI

0 °C ≤ TCASE ≤ 85°C7.8 7.8 7.8 7.8 μs

85 °C < TCASE ≤ 95°C3.9 3.9 3.9 3.9 μs 1

Speed gDDR3-1333

Units NOTECL-nRCD-nRP 9 -9 - 9

Parameter Symbol min max

Internal read command to first data tAA 13.5

(13.125)920 ns

ACT to internal read or write delay time tRCD 13.5

(13.125)9-ns

PRE command period tRP 13.5

(13.125)9-ns

ACT to ACT or REF command period tRC 49.5

(49.125)9-ns

ACT to PRE command period tRAS 36 9*tREFI ns

CL = 5 CWL = 5 tCK(AVG) 3.0 3.3 ns 1,2,3,4,5,10,

CWL = 6,7 tCK(AVG) Reserved ns 4

CL = 6

CWL = 5 tCK(AVG) 2.5 3.3 ns 1,2,3,5

CWL = 6 tCK(AVG) Reserved ns 1,2,3,4,5

CWL = 7 tCK(AVG) Reserved ns 4

CL = 7

CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3,4,5

CWL = 7 tCK(AVG) Reserved ns 1,2,3,4

CL = 8

CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3,5

CWL = 7 tCK(AVG) Reserved ns 1,2,3,4

CL = 9 CWL = 5,6 tCK(AVG) Reserved ns 4

CWL = 7 tCK(AVG) 1.5 <1.875 ns 1,2,3,4,9

CL = 10 CWL = 5,6 tCK(AVG) Reserved ns 4

CWL = 7 tCK(AVG) Reserved ns 1,2,3

Supported CL Settings 5,6,7,8,9 nCK

Supported CWL Settings 5,6,7 nCK

- 41 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 44 ] gDDR3-1600 Speed Bins

Speed gDDR3-1600

Units NOTECL-nRCD-nRP 11-11-11

Parameter Symbol min max

Internal read command to first data tAA 13.75

(13.125)920 ns

ACT to internal read or write delay time tRCD 13.75

(13.125)9-ns

PRE command period tRP 13.75

(13.125)9-ns

ACT to ACT or REF command period tRC 48.75

(48.125)9-ns

ACT to PRE command period tRAS 35 9*tREFI ns

CL = 5 CWL = 5 tCK(AVG) 3.0 3.3 ns 1,2,3,4,6,10,

CWL = 6,7,8 tCK(AVG) Reserved ns 4

CL = 6

CWL = 5 tCK(AVG) 2.5 3.3 ns 1,2,3,6

CWL = 6 tCK(AVG) Reserved ns 1,2,3,4,6

CWL = 7, 8 tCK(AVG) Reserved ns 4

CL = 7

CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3,4,6

CWL = 7 tCK(AVG) Reserved ns 1,2,3,4,6

CWL = 8 tCK(AVG) Reserved ns 4

CL = 8

CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3,6

CWL = 7 tCK(AVG) Reserved ns 1,2,3,4,6

CWL = 8 tCK(AVG) Reserved ns 1,2,3,4

CL = 9

CWL = 5,6 tCK(AVG) Reserved ns 4

CWL = 7 tCK(AVG) 1.5 <1.875 ns 1,2,3,4,6

CWL = 8 tCK(AVG) Reserved ns 1,2,3,4

CL = 10

CWL = 5,6 tCK(AVG) Reserved ns 4

CWL = 7 tCK(AVG) 1.5 <1.875 ns 1,2,3,6

CWL = 8 tCK(AVG) Reserved ns 1,2,3,4

CL = 11 CWL = 5,6,7 tCK(AVG) Reserved ns 4

CWL = 8 tCK(AVG) 1.25 <1.5 ns 1,2,3,9

Supported CL Settings 5,6,7,8,9,10,11 nCK

Supported CWL Settings 5,6,7,8 nCK

- 42 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 45 ] gDDR3-1866 Speed Bins

Speed gDDR3-1866

Units NOTECL-nRCD-nRP 13-13-13

Parameter Symbol min max

Internal read command to first data tAA 13.91

(13.125)12 20 ns

ACT to internal read or write delay time tRCD 13.91

(13.125)12 -ns

PRE command period tRP 13.91

(13.125)12 -ns

ACT to ACT or REF command period tRC 47.91

(47.125)12 -ns

ACT to PRE command period tRAS 34 9*tREFI ns

CL = 5 CWL = 5 tCK(AVG) 3.0 3.3 ns 1,2,3,4,7,10,

CWL = 6,7,8,9 tCK(AVG) Reserved ns 4

CL = 6

CWL = 5 tCK(AVG) 2.5 3.3 ns 1,2,3,7

CWL = 6 tCK(AVG) Reserved ns 1,2,3,4,7

CWL = 7,8,9 tCK(AVG) Reserved ns 4

CL = 7

CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 2.5 ns 1,2,3,4,7

CWL = 7,8,9 tCK(AVG) Reserved ns 4

CL = 8

CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3,7

CWL = 7 tCK(AVG) Reserved ns 1,2,3,4,7

CWL = 8,9 tCK(AVG) Reserved ns 4

CL = 9

CWL = 5,6 tCK(AVG) Reserved ns 4

CWL = 7 tCK(AVG) 1.5 1.875 ns 1,2,3,4,7

CWL = 8 tCK(AVG) Reserved ns 4

CWL = 9 tCK(AVG) Reserved ns 4

CL = 10

CWL = 5,6 tCK(AVG) Reserved ns 4

CWL = 7 tCK(AVG) 1.5 <1.875 ns 1,2,3,7

CWL = 8 tCK(AVG) Reserved ns 1,2,3,4,7

CL = 11

CWL = 5,6,7 tCK(AVG) Reserved ns 4

CWL = 8 tCK(AVG) 1.25 1.5 ns 1,2,3,4,7

CWL = 9 tCK(AVG) Reserved ns 1,2,3,4

CL = 12 CWL = 5,6,7,8 tCK(AVG) Reserved ns 4

CWL = 9 tCK(AVG) Reserved ns 1,2,3,4

CL = 13 CWL = 5,6,7,8 tCK(AVG) Reserved ns 4

CWL = 9 tCK(AVG) 1.07 <1.25 ns 1,2,3,9

Supported CL Settings 5,6,7,8,9,10,11,13 nCK

Supported CWL Settings 5,6,7,8,9 nCK

- 43 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 46 ] gDDR3-2133 Speed Bins

Speed gDDR3-2133

Units NOTECL-nRCD-nRP 14-14-14

Parameter Symbol min max

Internal read command to first data tAA 13.09 20 ns

ACT to internal read or write delay time tRCD 13.09 -ns

PRE command period tRP 13.09 -ns

ACT to ACT or REF command period tRC 46.09 -ns

ACT to PRE command period tRAS 33 9*tREFI ns

CL = 5 CWL = 5 tCK(AVG) 3.0 3.3 ns 1,2,3,4,8,10,

CWL = 6,7,8,9,10 tCK(AVG) Reserved ns 4

CL = 6

CWL = 5 tCK(AVG) 2.5 3.3 ns 1,2,3,8

CWL = 6 tCK(AVG) Reserved ns 1,2,3,4,8

CWL = 7,8,9,10 tCK(AVG) Reserved ns 4

CL = 7

CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3,8

CWL = 7 tCK(AVG) Reserved ns 1,2,3,4,8

CWL = 8,9,10 tCK(AVG) Reserved ns 4

CL = 8

CWL = 5 tCK(AVG) Reserved ns 4

CWL = 6 tCK(AVG) 1.875 <2.5 ns 1,2,3,8

CWL = 7 tCK(AVG) Reserved ns 1,2,3,4,8

CWL = 8,9,10 tCK(AVG) Reserved ns 4

CL = 9

CWL = 5,6 tCK(AVG) Reserved ns 4

CWL = 7 tCK(AVG) 1.5 <1.875 ns 1,2,3,8

CWL = 8 tCK(AVG) Reserved ns 1,2,3,4,8

CWL = 9,10 tCK(AVG) Reserved ns 4

CL = 10

CWL = 5,6 tCK(AVG) Reserved ns 4

CWL = 7 tCK(AVG) 1.5 <1.875 ns 1,2,3,8

CWL = 8,9 tCK(AVG) Reserved ns 1,2,3,4,8

CWL = 10 tCK(AVG) Reserved ns 4

CL = 11

CWL = 5,6,7 tCK(AVG) Reserved ns 4

CWL = 8 tCK(AVG) 1.25 <1.5 ns 1,2,3,8

CWL = 9 tCK(AVG) Reserved ns 1,2,3,4,8

CWL = 10 tCK(AVG) Reserved ns 1,2,3,4

CL = 12

CWL = 5,6,7,8 tCK(AVG) Reserved ns 4

CWL = 9 tCK(AVG) Reserved ns 1,2,3,4,8

CWL = 10 tCK(AVG) Reserved ns 1,2,3,4

CL = 13

CWL = 5,6,7,8 tCK(AVG) Reserved ns 4

CWL = 9 tCK(AVG) 1.07 <1.25 ns 1,2,3,8

CWL = 10 tCK(AVG) Reserved ns 1,2,3,4

CL = 14 CWL = 5,6,7,8,9 tCK(AVG) Reserved ns 4

CWL = 10 tCK(AVG) 0.935 <1.07 ns 1,2,3,9

Supported CL Settings 5,6,7,8,9,10,11,13,14 nCK

Supported CWL Settings 5,6,7,8,9,10 nCK

- 44 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

14.3.1 Speed Bin Table Notes

Absolute Specification (TOPER; VDDQ = VDD = 1.5V +/- 0.075 V);

NOTE :

1. The CL setting and CWL setting result in tCK(AVG).MIN and tCK(AVG).MAX requirements. When making a selection of tCK(AVG), both need to be fulfilled: Requirements

from CL setting as well as requirements from CWL setting.

2. tCK(AVG).MIN limits: Since CAS Latency is not purely analog - data and strobe output are synchronized by the DLL - all possible intermediate frequencies may not be guar-

anteed. An application should use the next smaller JEDEC standard tCK(AVG) value (2.5, 1.875, 1.5, or 1.25 ns) when calculating CL [nCK] = tAA [ns] / tCK(AVG) [ns],

rounding up to the next "Supported CL".

3. tCK(AVG).MAX limits: Calculate tCK(AVG) = tAA.MAX / CL SELECTED and round the resulting tCK(AVG) down to the next valid speed bin (i.e. 3.3ns or 2.5ns or 1.875 ns or

1.25 ns). This result is tCK(AVG).MAX corresponding to CL SELECTED.

4. "Reserved" settings are not allowed. User must program a different value.

5. Any gDDR3-1333 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/

Characterization.

6. Any gDDR3-1600 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/

Characterization.

7. Any gDDR3-1866 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/

Characterization.

8. Any gDDR3-2133 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/

Characterization.

9. For devices supporting optional downshift to CL=7 and CL=9, tAA/tRCD/tRP min must be 13.125 ns or lower. SPD settings must be programmed to match. For example,

gDDR3-1333(CL9) devices supporting downshift to gDDR3-1066(CL7) should program 13.125 ns in SPD bytes for tAAmin (Byte 16), tRCDmin (Byte 18), and tRPmin (Byte

20). gDDR3-1600(CL11) devices supporting downshift to gDDR3-1333(CL9) or gDDR3-1066(CL7) should program 13.125 ns in SPD bytes for tAAmin (Byte16), tRCDmin

(Byte 18), and tRPmin (Byte 20). gDDR3-1866(CL13) devices supporting downshift to gDDR3-1600(CL11) or gDDR3-1333(CL9) or gDDR3-1066(CL7) should program

13.125 ns in SPD bytes for tAAmin (Byte16), tRCDmin (Byte 18), and tRPmin (Byte 20). gDDR3-2133(CL14) devices supporting downshift to gDDR3-1866(CL13) or

gDDR3-1600(CL11) or gDDR3-1333(CL9) or gDDR3-1066(CL7) should program 13.125 ns in SPD bytes for tAAmin (Byte16), tRCDmin (Byte 18), and tRPmin (Byte 20).

Once tRP (Byte 20) is programmed to 13.125ns, tRCmin (Byte 21,23) also should be programmed accordingly. For example, 49.125ns (tRASmin + tRPmin=36ns+13.125ns)

for gDDR3-1333(CL9) and 48.125ns (tRASmin+tRPmin=35ns+13.125ns) for gDDR3-1600(CL11).

10. gDDR3 800 AC timing apply if DRAM operates at lower than 800 MT/s data rate.

11. For CL5 support, refer to DIMM SPD information. DRAM is required to support CL5. CL5 is not mandatory in SPD coding.

12. For devices supporting optional down binning to CL=11, CL=9 and CL=7, tAA/tRCD/tRPmin must be 13.125ns. SPD setting must be programed to match. For example,

gDDR3-1866 devices supporting down binning to gDDR3-1600 or gDDR3-1333 or 1066 should program 13.125ns in SPD bytes for tAAmin(byte16), tRCDmin(Byte18) and

tRPmin (byte20). Once tRP (Byte20) is programmed to 13.125ns, tRCmin (Byte21,23) also should be programmed accordingly. For example, 47.125ns (tRASmin + tRP-

min = 34ns + 13.125ns)

- 45 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

15. Timing Parameters by Speed Grade

[ Table 47 ] Timing Parameters by Speed Bins for gDDR3-1333 to gDDR3-2133 (Cont.)

Speed gDDR3-1333 gDDR3-1600 gDDR3-1866 gDDR3-2133

Units NOTE

Parameter Symbol MIN MAX MIN MAX MIN MAX MIN MAX

Clock Timing

Minimum Clock Cycle Time (DLL off mode) tCK(DLL_OFF) 8 - 8 - 8 - 8 - ns 6

Average Clock Period tCK(avg) See Speed Bins Table ps

Clock Period tCK(abs)

tCK(avg)min

tJIT(per)min

tCK(avg)max

tJIT(per)max

tCK(avg)min

tJIT(per)min

tCK(avg)max

tJIT(per)max

tCK(avg)min

tJIT(per)min

tCK(avg)max

tJIT(per)max

tCK(avg)min

tJIT(per)min

tCK(avg)max

tJIT(per)max

Average high pulse width tCH(avg) 0.47 0.53 0.47 0.53 0.47 0.53 0.47 0.53 tCK(avg)

Average low pulse width tCL(avg) 0.47 0.53 0.47 0.53 0.47 0.53 0.47 0.53 tCK(avg)

Clock Period Jitter tJIT(per) -80 80 -70 70 -60 60 -50 50 ps

Clock Period Jitter during DLL locking period tJIT(per, lck) -70 70 -60 60 -50 50 -40 40 ps

Cycle to Cycle Period Jitter tJIT(cc) 160 140 120 100 ps

Cycle to Cycle Period Jitter during DLL locking period tJIT(cc, lck) 140 120 100 80 ps

Cumulative error across 2 cycles tERR(2per) - 118 118 -103 103 -88 88 -74 74 ps

Cumulative error across 3 cycles tERR(3per) - 140 140 -122 122 -105 105 -87 87 ps

Cumulative error across 4 cycles tERR(4per) - 155 155 -136 136 -117 117 -97 97 ps

Cumulative error across 5 cycles tERR(5per) - 168 168 -147 147 -126 126 -105 105 ps

Cumulative error across 6 cycles tERR(6per) - 177 177 -155 155 -133 133 -111 111 ps

Cumulative error across 7 cycles tERR(7per) - 186 186 -163 163 -139 139 -116 116 ps

Cumulative error across 8 cycles tERR(8per) - 193 193 -169 169 -145 145 -121 121 ps

Cumulative error across 9 cycles tERR(9per) - 200 200 -175 175 -150 150 -125 125 ps

Cumulative error across 10 cycles tERR(10per) - 205 205 -180 180 -154 154 -128 128 ps

Cumulative error across 11 cycles tERR(11per) - 210 210 -184 184 -158 158 -132 132 ps

Cumulative error across 12 cycles tERR(12per) - 215 215 -188 188 -161 161 -134 134 ps

Cumulative error across n = 13, 14 ... 49, 50 cycles tERR(nper) tERR(nper)min = (1 + 0.68ln(n))*tJIT(per)min

tERR(nper)max = (1 + 0.68ln(n))*tJIT(per)max ps 24

Absolute clock HIGH pulse width tCH(abs) 0.43 -0.43 -0.43 -0.43 -tCK(avg) 25

Absolute clock Low pulse width tCL(abs) 0.43 -0.43 -0.43 -0.43 -tCK(avg) 26

Data Timing

DQS,DQS to DQ skew, per group, per access tDQSQ -125 -100 -85 -75 ps 13

DQ output hold time from DQS, DQS tQH 0.38 -0.38 -0.38 -0.38 -tCK(avg) 13, g

DQ low-impedance time from CK, CK tLZ(DQ) -500 250 -450 225 -390 195 -360 180 ps 13,14, f

DQ high-impedance time from CK, CK tHZ(DQ) -250 -225 -195 -180 ps 13,14, f

Data setup time to DQS, DQS referenced

to VIH(AC)VIL(AC) levels

tDS(base)

AC150 30 -10 - - -- - ps d, 17

tDS(base)

AC135 ----0--15 -ps d, 17

Data hold time to DQS, DQS referenced

to VIH(AC)VIL(AC) levels

tDH(base)

DC100 65 -45 -20 -5 - ps d, 17

DQ and DM Input pulse width for each input tDIPW 400 -360 -320 -280 -ps 28

Data Strobe Timing

DQS, DQS differential READ Preamble tRPRE 0.9 NOTE 19 0.9 NOTE 19 0.9 NOTE 19 0.9 NOTE 19 tCK 13, 19, g

DQS, DQS differential READ Postamble tRPST 0.3 NOTE 11 0.3 NOTE 11 0.3 NOTE 11 0.3 NOTE 11 tCK 11, 13, b

DQS, DQS differential output high time tQSH 0.4 -0.4 -0.4 -0.4 -tCK(avg) 13, g

DQS, DQS differential output low time tQSL 0.4 -0.4 -0.4 -0.4 -tCK(avg) 13, g

DQS, DQS differential WRITE Preamble tWPRE 0.9 -0.9 -0.9 -0.9 - tCK

DQS, DQS differential WRITE Postamble tWPST 0.3 -0.3 -0.3 -0.3 - tCK

DQS, DQS rising edge output access time from rising CK, CK tDQSCK -255 255 -225 225 -195 195 -180 180 ps 13,f

DQS, DQS low-impedance time (Referenced from RL-1) tLZ(DQS) -500 250 -450 225 -390 195 -360 180 ps 13,14,f

DQS, DQS high-impedance time (Referenced from RL+BL/2) tHZ(DQS) -250 -225 -195 -180 ps 12,13,14

DQS, DQS differential input low pulse width tDQSL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK 29, 31

DQS, DQS differential input high pulse width tDQSH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK 30, 31

DQS, DQS rising edge to CK, CK rising edge tDQSS -0.25 0.25 -0.27 0.27 -0.27 0.27 -0.27 0.27 tCK(avg) c

DQS,DQS falling edge setup time to CK, CK rising edge tDSS 0.2 -0.18 -0.18 -0.18 -tCK(avg) c, 32

DQS,DQS falling edge hold time to CK, CK rising edge tDSH 0.2 -0.18 -0.18 -0.18 -tCK(avg) c, 32

- 46 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 47 ] Timing Parameters by Speed Bins for gDDR3-1333 to gDDR3-2133 (Cont.)

Speed gDDR3-1333 gDDR3-1600 gDDR3-1866 gDDR3-2133

Units NOTE

Parameter Symbol MIN MAX MIN MAX MIN MAX MIN MAX

Command and Address Timing

DLL locking time tDLLK 512 -512 -512 -512 -nCK

internal READ Command to PRECHARGE Command delay tRTP

max

(4nCK,7.5

ns)

max

(4nCK,7.5

ns)

max

(4nCK,7.5

ns)

max

(4nCK,7.5

ns)

- e

Delay from start of internal write transaction to internal read com-

mand tWTR

max

(4nCK,7.5

ns)

max

(4nCK,7.5

ns)

max

(4nCK,7.5

ns)

max

(4nCK,7.5

ns)

-e,18

WRITE recovery time tWR 15 -15 -15 -15 -ns e

Mode Register Set command cycle time tMRD 4 - 4 - 4 - 4 - nCK

Mode Register Set command update delay tMOD

max

(12nCK,15

ns)

max

(12nCK,15

ns)

max

(12nCK,15

ns)

max

(12nCK,15

ns)

CAS# to CAS# command delay tCCD 4 - 4 - 4 - 4 - nCK

Auto precharge write recovery + precharge time tDAL(min) WR + roundup (tRP / tCK(AVG)) nCK

Multi-Purpose Register Recovery Time tMPRR 1 - 1 - 1 - nCK 22

ACTIVE to PRECHARGE command period tRAS See “Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin” on page 42 ns e

ACTIVE to ACTIVE command period for 1KB page size tRRD

max

(4nCK,6ns

)

max

(4nCK,6ns

)

max

(4nCK,

5ns)

max

(4nCK,

5ns)

- e

ACTIVE to ACTIVE command period for 2KB page size tRRD

max

(4nCK,7.5

ns)

max

(4nCK,7.5

ns)

max

(4nCK,

6ns)

max

(4nCK,

6ns)

- e

Four activate window for 1KB page size tFAW 30 -30 -27 -25 -ns e

Four activate window for 2KB page size tFAW 45 -40 -35 -35 -ns e

Command and Address setup time to CK, CK referenced to

VIH(AC) / VIL(AC) levels

tIS(base)

AC175 65 -45 -----ps b,16

tIS(base)

AC150 65+125 -45+125 -----ps b,16

tIS(base)

AC135 ----65 -60 -ps b,16

tIS(base)

AC125 ----150 -135 -ps b,16,27

Command and Address hold time from CK, CK referenced to

VIH(AC) / VIL(AC) levels

tIH(base)

DC100 140 -120 -100 -95 -ps b,16

Control & Address Input pulse width for each input tIPW 620 -560 -535 -470 -ps 28

Calibration Timing

Power-up and RESET calibration time tZQinitI 512 -512 -max(512n

CK,640ns) -max(512n

CK,640ns) -nCK

Normal operation Full calibration time tZQoper 256 -256 -max(256n

CK,320ns) -max(256n

CK,320ns) -nCK

Normal operation short calibration time tZQCS 64 -64 -max(64nC

K,80ns) -max(64nC

K,80ns) -nCK 23

Reset Timing

Exit Reset from CKE HIGH to a valid command tXPR

max(5nCK

, tRFC +

10ns)

max(5nCK

, tRFC +

10ns)

max(5nCK

tRFC(min)

+ 10ns)

max(5nCK

tRFC(min)

+ 10ns)

Self Refresh Timing

Exit Self Refresh to commands not requiring a locked DLL tXS

max(5nCK

,tRFC +

10ns)

max(5nCK

,tRFC +

10ns)

max(5nCK

,tRFC(min)

+ 10ns)

max(5nCK

,tRFC(min)

+ 10ns)

Exit Self Refresh to commands requiring a locked DLL tXSDLL tDLLK(min

)-tDLLK(min

)-nCK

Minimum CKE low width for Self refresh entry to exit timing tCKESR tCKE(min)

+ 1tCK -tCKE(min)

+ 1nCK -tCKE(min)

+ 1nCK -

Valid Clock Requirement after Self Refresh Entry (SRE) or Pow-

er-Down Entry (PDE) tCKSRE

max(5nCK

10ns)

max(5nCK

10ns)

max(5nCK

10ns)

max(5nCK

10ns)

Valid Clock Requirement before Self Refresh Exit (SRX) or Pow-

er-Down Exit (PDX) or Reset Exit tCKSRX

max(5nCK

10ns)

max(5nCK

10ns)

max(5nCK

10ns)

max(5nCK

10ns)

- 47 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 47 ] Timing Parameters by Speed Bins for gDDR3-1333 to gDDR3-2133

Speed gDDR3-1333 gDDR3-1600 gDDR3-1866 gDDR3-2133

Units NOTE

Parameter Symbol MIN MAX MIN MAX MIN MAX MIN MAX

Power Down Timing

Exit Power Down with DLL on to any valid command;Exit Pre-

charge Power Down with DLL

frozen to commands not requiring a locked DLL

tXP

max

(3nCK,6n

max

(3nCK,6n

-max(3nC

K,6ns) -max(3nC

K,6ns) -

Exit Precharge Power Down with DLL frozen to commands re-

quiring a locked DLL tXPDLL

max

(10nCK,

24ns)

max

(10nCK,

24ns)

-max(10nC

K,24ns) -max(10nC

K,24ns) - 2

CKE minimum pulse width tCKE

max

(3nCK,

5.625ns)

max

(3nCK,5n

-max(3nC

K,5ns) -max(3nC

K,5ns) -

Command pass disable delay tCPDED 1 - 1 - 2 - 2 - nCK

Power Down Entry to Exit Timing tPD tCKE(min) 9*tREFI tCKE(min) 9*tREFI tCKE(min) 9*tREFI tCKE(min) 9*tREFI tCK 15

Timing of ACT command to Power Down entry tACTPDEN 1 - 1 - 1 - 2 - nCK 20

Timing of PRE command to Power Down entry tPRPDEN 1 - 1 - 1 - 2 - nCK 20

Timing of RD/RDA command to Power Down entry tRDPDEN RL + 4 +1 -RL + 4 +1 -RL + 4 +1 -RL + 4 +1 -

Timing of WR command to Power Down entry

(BL8OTF, BL8MRS, BC4OTF) tWRPDEN

WL + 4

+(tWR/

tCK(avg))

WL + 4

+(tWR/

tCK(avg))

WL + 4

+(tWR/

tCK(avg))

WL + 4

+(tWR/

tCK(avg))

-nCK 9

Timing of WRA command to Power Down entry

(BL8OTF, BL8MRS, BC4OTF) tWRAPDEN WL+4+W

R+1 -WL + 4

+WR +1 -WL + 4

+WR +1 -nCK 10

Timing of WR command to Power Down entry

(BC4MRS) tWRPDEN

WL + 2

+(tWR/

tCK(avg))

WL + 2

+(tWR/

tCK(avg))

WL + 2

+(tWR/

tCK(avg))

WL + 2

+(tWR/

tCK(avg))

-nCK 9

Timing of WRA command to Power Down entry

(BC4MRS) tWRAPDEN WL +2

+WR +1 -WL +2

+WR +1 -nCK 10

Timing of REF command to Power Down entry tREFPDEN 1 - 1 - 1 - 2 - 20,21

Timing of MRS command to Power Down entry tMRSPDEN tMOD(min

)-tMOD(min

ODT Timing

ODT high time without write command or with write command

and BC4 ODTH4 4 - 4 - 4 - 4 - nCK

ODT high time with Write command and BL8 ODTH8 6 - 6 - 6 - 6 - nCK

Asynchronous RTT turn-on delay (Power-Down with DLL fro-

zen) tAONPD 28.5 28.5 28.5 28.5 ns

Asynchronous RTT turn-off delay (Power-Down with DLL fro-

zen) tAOFPD 28.5 28.5 28.5 28.5 ns

RTT turn-on tAON -250 250 -225 225 -195 195 -180 180 ps 7,f

RTT_NOM and RTT_WR turn-off time from ODTLoff reference tAOF 0.3 0.7 0.3 0.7 0.3 0.7 0.3 0.7 tCK(avg) 8,f

RTT dynamic change skew tADC 0.3 0.7 0.3 0.7 0.3 0.7 0.3 0.7 tCK(avg) f

Write Leveling Timing

First DQS pulse rising edge after tDQSS margining mode is pro-

grammed tWLMRD 40 -40 -40 -40 - tCK 3

DQS/DQS delay after tDQS margining mode is programmed tWLDQSEN 25 -25 -25 -25 - tCK 3

Write leveling setup time from rising CK, CK crossing to rising

DQS, DQS crossing tWLS 195 -165 -140 -125 -ps

Write leveling hold time from rising DQS, DQS crossing to rising

CK, CK crossing tWLH 195 -165 -140 -125 -ps

Write leveling output delay tWLO 0 9 0 7.5 07.5 07.5 ns

Write leveling output error tWLOE 02020202ns

- 48 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

15.1 Jitter Notes

Specific Note a Unit ’tCK(avg)’ represents the actual tCK(avg) of the input clock under operation. Unit ’nCK’ represents one clock cycle of the

input clock, counting the actual clock edges.ex) tMRD = 4 [nCK] means; if one Mode Register Set command is registered at Tm,

another Mode Register Set command may be registered at Tm+4, even if (Tm+4 - Tm) is 4 x tCK(avg) + tERR(4per),min.

Specific Note b These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition

edge to its respective clock signal (CK/CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e.

tJIT(per), tJIT(cc), etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is,

these parameters should be met whether clock jitter is present or not.

Specific Note c These parameters are measured from a data strobe signal (DQS(L/U), DQS(L/U)) crossing to its respective clock signal (CK, CK)

crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as these are relative

to the clock signal crossing. That is, these parameters should be met whether clock jitter is present or not.

Specific Note d These parameters are measured from a data signal (DM(L/U), DQ(L/U)0, DQ(L/U)1, etc.) transition edge to its respective data

strobe signal (DQS(L/U), DQS(L/U)) crossing.

Specific Note e For these parameters, the gDDR3 SDRAM device supports tnPARAM [nCK] = RU{ tPARAM [ns] / tCK(avg) [ns] }, which is in

clock cycles, assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP = RU{tRP /

tCK(avg)}, which is in clock cycles, if all input clock jitter specifications are met. This means: For gDDR3-800 6-6-6, of which tRP

= 15ns, the device will support tnRP = RU{tRP / tCK(avg)} = 6, as long as the input clock jitter specifications are met, i.e. Pre-

charge command at Tm and Active command at Tm+6 is valid even if (Tm+6 - Tm) is less than 15ns due to input clock jitter.

Specific Note f When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(mper),act of the input

clock, where 2 <= m <= 12. (output deratings are relative to the SDRAM input clock.)

For example, if the measured jitter into a gDDR3-800 SDRAM has tERR(mper),act,min = - 172 ps and tERR(mper),act,max = +

193 ps, then tDQSCK,min(derated) = tDQSCK,min - tERR(mper),act,max = - 400 ps - 193 ps = - 593 ps and tDQSCK,max(der-

ated) = tDQSCK,max - tERR(mper),act,min = 400 ps + 172 ps = + 572 ps. Similarly, tLZ(DQ) for gDDR3-800 derates to

tLZ(DQ),min(derated) = - 800 ps - 193 ps = - 993 ps and tLZ(DQ),max(derated) = 400 ps + 172 ps = + 572 ps. (Caution on the

min/max usage!)

Note that tERR(mper),act,min is the minimum measured value of tERR(nper) where 2 <= n <=

12, and tERR(mper),act,max is the maximum measured value of tERR(nper) where 2 <= n <= 12.

Specific Note g When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per),act of the input

clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a gDDR3-800 SDRAM

has tCK(avg),act = 2500 ps, tJIT(per),act,min = - 72 ps and tJIT(per),act,max = + 93 ps, then tRPRE,min(derated) = tRPRE,min +

tJIT(per),act,min = 0.9 x tCK(avg),act + tJIT(per),act,min = 0.9 x 2500 ps - 72 ps = + 2178 ps. Similarly, tQH,min(derated) =

tQH,min + tJIT(per),act,min = 0.38 x tCK(avg),act + tJIT(per),act,min = 0.38 x 2500 ps - 72 ps = + 878 ps. (Caution on the min/

max usage!)

- 49 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

15.2 Timing Parameter Notes

1. Actual value dependant upon measurement level definitions which are TBD.

2. Commands requiring a locked DLL are: READ (and RAP) and synchronous ODT commands.

3. The max values are system dependent.

4. WR as programmed in mode register

5. Value must be rounded-up to next higher integer value

6. There is no maximum cycle time limit besides the need to satisfy the refresh interval, tREFI.

7. For definition of RTT turn-on time tAON see "Device Operation & Timing Diagram Datasheet"

8. For definition of RTT turn-off time tAOF see "Device Operation & Timing Diagram Datasheet".

9. tWR is defined in ns, for calculation of tWRPDEN it is necessary to round up tWR / tCK to the next integer.

10. WR in clock cycles as programmed in MR0

11. The maximum read postamble is bound by tDQSCK(min) plus tQSH(min) on the left side and tHZ(DQS)max on the right side. See "Device Operation & Timing

Diagram Datasheet.

12. Output timing deratings are relative to the SDRAM input clock. When the device is operated with input clock jitter, this parameter needs to be derated by TBD

13. Value is only valid for RON34

14. Single ended signal parameter. Refer to chapter 8 and chapter 9 for definition and measurement method.

15. tREFI depends on TOPER

16. tIS(base) and tIH(base) values are for 1V/ns CMD/ADD single-ended slew rate and 2V/ns CK, CK differential slew rate, Note for DQ and DM signals,

VREF(DC) = VREFDQ(DC). For input only pins except RESET, VREF(DC)=VREFCA(DC).

See "Address/Command Setup, Hold and Derating :" on page 50. .

17. tDS(base) and tDH(base) values are for 1V/ns DQ single-ended slew rate and 2V/ns DQS, DQS differential slew rate. Note for DQ and DM signals,

VREF(DC)= VREFDQ(DC). For input only pins except RESET, VREF(DC)=VREFCA(DC).

See "Data Setup, Hold and Slew Rate Derating :" on page 57.

18. Start of internal write transaction is defined as follows ;

For BL8 (fixed by MRS and on-the-fly) : Rising clock edge 4 clock cycles after WL.

For BC4 (on-the-fly) : Rising clock edge 4 clock cycles after WL

For BC4 (fixed by MRS) : Rising clock edge 2 clock cycles after WL

19. The maximum read preamble is bound by tLZDQS(min) on the left side and tDQSCK(max) on the right side. See "Device Operation & Timing Diagram

Datasheet"

20. CKE is allowed to be registered low while operations such as row activation, precharge, autoprecharge or refresh are in progress, but power-down

IDD spec will not be applied until finishing those operations.

21. Although CKE is allowed to be registered LOW after a REFRESH command once tREFPDEN(min) is satisfied, there are cases where additional time

such as tXPDLL(min) is also required. See "Device Operation & Timing Diagram Datasheet".

22. Defined between end of MPR read burst and MRS which reloads MPR or disables MPR function.

23. One ZQCS command can effectively correct a minimum of 0.5 % (ZQCorrection) of RON and RTT impedance error within 64 nCK for all speed bins assuming

the maximum sensitivities specified in the ’Output Driver Voltage and Temperature Sensitivity’ and ’ODT Voltage and Temperature Sensitivity’ tables. The

appropriate interval between ZQCS commands can be determined from these tables and other application specific parameters.

One method for calculating the interval between ZQCS commands, given the temperature (Tdriftrate) and voltage (Vdriftrate) drift rates that the SDRAM is sub-

ject to in the application, is illustrated. The interval could be defined by the following formula:

where TSens = max(dRTTdT, dRONdTM) and VSens = max(dRTTdV, dRONdVM) define the SDRAM temperature and voltage sensitivities.

For example, if TSens = 1.5% /°C, VSens = 0.15% / mV, Tdriftrate = 1°C / sec and Vdriftrate = 15 mV / sec, then the interval between ZQCS commands is calcu-

lated as:

24. n = from 13 cycles to 50 cycles. This row defines 38 parameters.

25. tCH(abs) is the absolute instantaneous clock high pulse width, as measured from one rising edge to the following falling edge.

26. tCL(abs) is the absolute instantaneous clock low pulse width, as measured from one falling edge to the following rising edge.

27. The tIS(base) AC150 specifications are adjusted from the tIS(base) AC175 specification by adding an additional 125 ps for gDDR3-800/1066 or 100ps for

gDDR3-1333/1600 of derating to accommodate for the lower alternate threshold of 150mV and another 25ps to account for the earlier reference point [(175mv

- 150 mV) / 1 V/ns].

28. Pulse width of a input signal is defined as the width between the first crossing of VREF(DC) and the consecutive crossing of VREF(DC)

29. tDQSL describes the instantaneous differential input low pulse width on DQS-DQS, as measured from one falling edge to the next consecutive rising edge.

30. tDQSH describes the instantaneous differential input high pulse width on DQS-DQS, as measured from one rising edge to the next consecutive falling edge.

31. tDQSH, act + tDQSL, act = 1 tCK, act ; with tXYZ, act being the actual measured value of the respective timing parameter in the application.

32. tDSH, act + tDSS, act = 1 tCK, act ; with tXYZ, act being the actual measured value of the respective timing parameter in the application.

33. The tIS(base) AC125 specifications are adjusted from the tIS(base) AC135 specification by adding an additional 75ps for gDDR3-1866 and 65ps for gDDR3-

2133 to accommodate for the lower alternate threshold of 125mV and another 10ps to account for the earlier reference point [(135mv - 125mV) / 1 V/ns].

ZQCorrection

(TSens x Tdriftrate) + (VSens x Vdriftrate)

0.5

(1.5 x 1) + (0.15 x 15) = 0.133

128ms

- 50 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

15.3 Address/Command Setup, Hold and Derating :

For all input signals the total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS(base) and tIH(base) value (see

Table 48) to the ΔtIS and ΔtIH derating value (see Table 49) respectively.

Example: tIS (total setup time) = tIS(base) + ΔtIS Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of

VREF(DC) and the first crossing of VIH(AC)min. Setup (tIS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of

VREF(DC) and the first crossing of VIL(AC)max. If the actual signal is always earlier than the nominal slew rate line between shaded ’VREF(DC) to ac

region’, use nominal slew rate for derating value (see Figure 21). If the actual signal is later than the nominal slew rate line anywhere between shaded

’VREF(DC) to ac region’, the slew rate of a tangent line to the actual signal from the ac level to dc level is used for derating value (see Figure 23).

Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC).

Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC). If

the actual signal is always later than the nominal slew rate line between shaded ’dc to VREF(DC) region’, use nominal slew rate for derating value (see

Figure 22). If the actual signal is earlier than the nominal slew rate line anywhere between shaded ’dc to VREF(DC) region’, the slew rate of a tangent line

to the actual signal from the dc level to VREF(DC) level is used for derating value (see Figure 24).

For a valid transition the input signal has to remain above/below VIH/IL(AC) for some time tVAC (see Table 53).

Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(AC) at the time of the rising clock

transition) a valid input signal is still required to complete the transition and reach VIH/IL(AC).

For slew rates in between the values listed in Table 49, the derating values may obtained by linear interpolation.

These values are typically not subject to production test. They are verified by design and characterization.

[ Table 48 ] ADD/CMD Setup and Hold Base-Values for 1V/ns

NOTE :

1. AC/DC referenced for 1V/ns Address/Command slew rate and 2 V/ns differential CK-Ck slew rate

2. The tIS(base)-AC150 specifications are adjusted from the tIS(base) AC175 specification by adding an additional 125ps for gDDR3-800/1066 or 100ps for

gDDR3-1333/1600 of derating to accommodate for the lower alternate threshold of 150mV and another 25ps to account for the earlier reference point

[(175mV-150mV)/1 V/ns]

3. The tIS(base) AC125 specifications are adjusted from the tIS(base) AC135 specification by adding an additional 75ps for gDDR3-1866 and 65ps for gDDR3-2133 to accom-

modate for the lower alternate threshold of 125mV and another 10ps to account for the earlier reference point [(135mV-125mV)/1V/ns].

[ Table 49 ] Derating values gDDR3-1333/1600 tIS/tIH-AC/DC based AC175 Threshold

[ps] gDDR3-1333 gDDR3-1600 gDDR3-1866 gDDR3-2133 reference

tIS(base) AC175 65 45 --V

IH/L(AC)

tIS(base) AC150 190 170 --V

IH/L(AC)

tIS(base)-AC135 - - 65 60 VIH/L(AC)

tIS(base)-AC125 - - 150 135 VIH/L(AC)

tIH(base)-DC100 140 120 100 95 VIH/L(DC)

ΔtIS, ΔtIH Derating [ps] AC/DC based

Alternate AC175 Threshold -> VIH(AC) = VREF(DC) + 175mV, VIL(AC) = VREF(DC) - 175mV

CLK,CLK Differential Slew Rate

4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4V/ns 1.2V/ns 1.0V/ns

ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH

CMD/

ADD

Slew

rate

V/ns

2.08850885088509658104661127412084128100

1.559345934593467427550835891689984

1.0000000881616242432344050

0.9-2-4-2-4-2-4 6 41412222030303846

0.8-6-10-6-10-6-102 -210 6 181426243440

0.7 -11 -16 -11 -16 -11 -16 -3 -8 5 0 13 8 21 18 29 34

0.6 -17 -26 -17 -26 -17 -26 -9 -18 -1 -10 7 -2 15 8 23 24

0.5 -35 -40 -35 -40 -35 -40 -27 -32 -19 -24 -11 -16 -2 -6 5 10

0.4 -62 -60 -62 -60 -62 -60 -54 -52 -46 -44 -38 -36 -30 -26 -22 -10

- 51 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 50 ] Derating values gDDR3-1333/1600 tIS/tIH-AC/DC based - Alternate AC150 Threshold

[ Table 51 ] Derating values gDDR3-1866/2133 tIS/tIH-AC/DC based Alternate AC135 Threshold

ΔtIS, ΔtIH Derating [ps] AC/DC based

Alternate AC150 Threshold -> VIH(AC) = VREF(DC) + 150mV, VIL(AC) = VREF(DC) - 150mV

CLK,CLK Differential Slew Rate

4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4V/ns 1.2V/ns 1.0V/ns

ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH

CMD/

ADD

Slew

rate

V/ns

2.075507550755083589166997410784115100

1.550345034503458426650745882689084

1.0000000881616242432344050

0.9 0 -4 0 -4 0 -4 8 4 1612242032304046

0.8 0 -100 -10 0 -108 -2 16 6 241432244040

0.70-160-160-168-816024832184034

0.6 -1 -26 -1 -26 -1 -26 7 -18 15 -10 23 -2 31 8 39 24

0.5 -10 -40 -10 -40 -10 -40 -2 -32 6 -24 14 -16 22 -6 30 10

0.4 -25 -60 -25 -60 -25 -60 -17 -52 -9 -44 -1 -36 7 -26 15 -10

ΔtIS, ΔtIH Derating [ps] AC/DC based

Alternate AC125 Threshold -> VIH(AC) = VREF(DC) + 135mV, VIL(AC) = VREF(DC) - 135mV

CLK,CLK Differential Slew Rate

4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4V/ns 1.2V/ns 1.0V/ns

ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH

CMD/

ADD

Slew

rate

V/ns

2.068506850685076588466927410084108100

1.545344534453453426150695877688584

1.0000000881616242432344050

0.9 2 -4 2 -4 2 -4 10 4 1812262034304246

0.8 3 -103 -10 3-1011 -2 19 6 271435244340

0.7 6 -16 6 -16 6 -16 14 -8 22 0 30 8 38 18 46 34

0.6 9 -26 9 -26 9 -26 17 -18 25 -10 33 -2 41 8 49 24

0.5 5 -40 5 -40 5 -40 13 -32 21 -24 29 -16 37 -6 45 10

0.4 -3 -60 -3 -60 -3 -60 6 -52 14 -44 22 -36 30 -26 38 -10

- 52 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 52 ] Derating values gDDR3-1866/2133 tIS/tIH-AC/DC based - Alternate AC125 Threshold

[ Table 53 ] Required time tVAC above VIH(AC) {blow VIL(AC)} for valid ADD/CMD transition

ΔtIS, ΔtIH Derating [ps] AC/DC based

Alternate AC125 Threshold -> VIH(AC) = VREF(DC) + 125mV, VIL(AC) = VREF(DC) - 125mV

CLK,CLK Differential Slew Rate

4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4V/ns 1.2V/ns 1.0V/ns

ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH

CMD/

ADD

Slew

rate

V/ns

2.06350635063507158796687749584103100

1.542344234423450425850665874688284

1.0000000881616242432344050

0.9 4 -4 4 -4 4 -412 4 2012282036304446

0.8 6 -10 6 -10 6 -10 14 -2 22 6 30 14 38 24 46 40

0.7 11 -16 11 -16 11 -16 19 -8 27 0 35 8 43 18 51 34

0.6 16 -26 16 -26 16 -26 24 -18 32 -10 40 -2 48 8 56 24

0.5 15 -40 15 -40 15 -40 23 -32 31 -24 39 -16 47 -6 55 10

0.4 13 -60 13 -60 13 -60 21 -52 29 -44 37 -36 45 -26 53 -10

Slew Rate[V/ns] tVAC @175mV [ps] tVAC @150mV [ps] tVAC @135mV [ps] tVAC @125mV [ps]

min max min max min max min max

>2.0 75 - 175 - TBD - TBD -

2.0 57 - 170 -TBD-TBD-

1.5 50 - 167 - TBD - TBD -

1.0 38 - 163 -TBD-TBD-

0.9 34 - 162 - TBD - TBD -

0.8 29 - 161 -TBD-TBD-

0.7 22 - 159 - TBD - TBD -

0.6 13 - 155 -TBD-TBD-

0.5 0 - 150 - TBD - TBD -

< 0.5 0 - 150 -TBD-TBD-

- 53 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

Figure 21. Illustration of nominal slew rate and tVAC for setup time tDS (for DQ with respect to strobe) and tIS

(for ADD/CMD with respect to clock).

VSS

tDS tDH

Setup Slew Rate

Setup Slew Rate Rising Signal

Falling Signal

Δ TF Δ TR

VREF(DC) - VIL(AC)max

Δ TF

=VIH(AC)min - VREF(DC)

Δ TR

VDDQ

VIH(AC) min

VIH(DC) min

VREF(DC)

VIL(DC) max

VIL(AC) max

nominal slew

rate

nominal

slew rate

VREF to ac

region

VREF to ac

region

tIS tIH

tDS tDH

tIS tIH

tVAC

NOTE :Clock and Strobe are drawn on a different time scale.

DQS

- 54 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

Figure 22. Illustration of nominal slew rate for hold time tDH (for DQ with respect to strobe) and tIH

(for ADD/CMD with respect to clock).

VSS

Hold Slew Rate

Falling Signal

Rising Signal

Δ TR Δ TF

VREF(DC) - VIL(DC)max

Δ TR

=VIH(DC)min - VREF(DC)

Δ TF

VDDQ

VIH(AC) min

VIH(DC) min

VREF(DC)

VIL(DC) max

VIL(AC) max

nominal

slew rate

nominal

slew rate

dc to VREF

region

tIS tIH tIS tIH

dc to VREF

region

NOTE :Clock and Strobe are drawn on a different time scale.

tDS tDH tDS tDH

DQS

- 55 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

Figure 23. Illustration of tangent line for setup time tDS (for DQ with respect to strobe) and tIS

(for ADD/CMD with respect to clock)

VSS

Setup Slew Rate

Rising Signal

Falling Signal

Δ TF

Δ TR

tangent line[VREF(DC) - VIL(AC)max]

Δ TF

tangent line[VIH(AC)min - VREF(DC)]

Δ TR

VDDQ

VIH(AC) min

VIH(DC) min

VREF(DC)

VIL(DC) max

VIL(AC) max

tangent

VREF to ac

region

VREF to ac

region

line

nominal

line

nominal

line

tIS tIH tIS tIH

tVAC

NOTE :Clock and Strobe are drawn on a different time scale.

tDS tDH tDS tDH

DQS

tVAC

- 56 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

Figure 24. Illustration of tangent line for hold time tDH (for DQ with respect to strobe) and tIH

(for ADD/CMD with respect to clock)

VSS

Hold Slew Rate

Δ TF

Δ TR

tangent line [ VIH(DC)min - VREF(DC) ]

Δ TF

VDDQ

VIH(AC) min

VIH(DC) min

VREF(DC)

VIL(DC) max

VIL(AC) max

tangent

dc to VREF

region

dc to VREF

region

line

nominal

line

nominal

line

Falling Signal

Hold Slew Rate tangent line [ VREF(DC) - VIL(DC)max ]

Δ TR

Rising Signal

tIS tIH tIS tIH

NOTE :Clock and Strobe are drawn on a different time scale.

tDS tDH tDS tDH

DQS

- 57 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

15.4 Data Setup, Hold and Slew Rate Derating :

For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDS(base) and tDH(base) value (see

Table 54) to the Δ tDS and ΔtDH (see Table 55) derating value respectively. Example: tDS (total setup time) = tDS(base) + ΔtDS.

Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC)min.

Setup (tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC)max

(see Figure 25). If the actual signal is always earlier than the nominal slew rate line between shaded ’VREF(DC) to ac region’, use nominal slew rate for

derating value. If the actual signal is later than the nominal slew rate line anywhere

between shaded ’VREF(DC) to ac region’, the slew rate of a tangent line to the actual signal from the ac level to dc level is used for derating value (see

Figure 27).

Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC).

Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC)

(see Figure ). If the actual signal is always later than the nominal slew rate line between shaded ’dc level to VREF(DC) region’, use nominal slew rate for

derating value. If the actual signal is earlier than the nominal slew rate line anywhere between shaded ’dc to VREF(DC) region’, the slew rate of a tangent

line to the actual signal from the dc level to VREF(DC) level is used for derating value (see Figure 28).

For a valid transition the input signal has to remain above/below VIH/IL(AC) for some time tVAC (see Table 56).

Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(AC) at the time of the rising clock

transition) a valid input signal is still required to complete the transition and reach VIH/IL(AC).

For slew rates in between the values listed in the tables the derating values may obtained by linear interpolation.

These values are typically not subject to production test. They are verified by design and characterization.

[ Table 54 ] Data Setup and Hold Base-Values

NOTE : AC/DC referenced for 1V/ns DQ-slew rate and 2 V/ns DQS slew rate)

[ Table 55 ] Derating values for gDDR3-1333/1600 tDS/tDH - (AC150)

NOTE : 1. Cell contents shaded in red are defined as ’not supported’.

[ Table 56 ] Derating values for gDDR3-1866/2133 tDS/tDH - (AC135)

NOTE : 1. Cell contents shaded in red are defined as ’not supported’.

[ps] gDDR3-1333 gDDR3-1600 gDDR3-1866 gDDR3-2133 reference

tDS(base) AC150 30 10 --V

IH/L(AC)

tDS(base) AC135 - - 0 -15 VIH/L(AC)

tDH(base) DC100 65 45 20 5V

IH/L(DC)

ΔtDS, ΔtDH Derating in [ps] AC/DC based1

DQS,DQS Differential Slew Rate

4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4V/ns 1.2V/ns 1.0V/ns

ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH

Slew

rate

V/ns

2.0755075507550----------

1.55034503450345842 - - - - - - - -

1.0000000881616- - - - - -

0.9- - 0 -4 0 -4 8 4 16122420 - - - -

0.8 - - - - 0 -10 8 -2 16 6 24 14 32 24 - -

0.7 - - - - - - 8 -8 16 0 24 8 32 18 40 34

0.6--------15-1023-23183924

0.5----------14-1622-63010

0.4------------7-2615-10

ΔtDS, ΔtDH Derating in [ps] AC/DC based1

DQS,DQS Differential Slew Rate

4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4V/ns 1.2V/ns 1.0V/ns

ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH

Slew

rate

V/ns

2.0685068506850----------

1.54534453445345342 - - - - - - - -

1.0000000881616- - - - - -

0.9 - - 2 -4 2 -4 10 4 18 12 26 20 - - - -

0.8 - - - - 3 -10 11 -2 19 6 27 14 35 24 - -

0.7------14-822030838184634

0.6--------25-1033-24184924

0.5----------29-1637-64510

0.4------------30-2638-10

- 58 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 57 ] Required time tVAC above VIH(AC) {blow VIL(AC)} for valid DQ transition

Slew Rate[V/ns]

tVAC[ps] gDDR3-1333/1600 (AC150) tVAC[ps] gDDR3-1866

(AC135)

tVAC[ps] gDDR3-2133

(AC135)

min max min max min max

>2.0 175 - 114 - 89 -

2.0 170 -109- 86 -

1.5 167 - 66 - 41 -

1.0 163 -TBD - TBD -

0.9 162 - TBD - TBD -

0.8 161 -TBD - TBD -

0.7 159 - TBD - TBD -

0.6 155 -TBD - TBD -

0.5 155 - TBD - TBD -

<0.5 150 -TBD - TBD -

- 59 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

Figure 25. Illustration of nominal slew rate and tVAC for setup time tDS (for DQ with respect to strobe) and tIS

(for ADD/CMD with respect to clock).

VSS

tDS tDH

Setup Slew Rate

Setup Slew Rate Rising Signal

Falling Signal

Δ TF Δ TR

VREF(DC) - VIL(AC)max

Δ TF

=VIH(AC)min - VREF(DC)

Δ TR

VDDQ

VIH(AC) min

VIH(DC) min

VREF(DC)

VIL(DC) max

VIL(AC) max

nominal slew

rate

nominal

slew rate

VREF to ac

region

VREF to ac

region

tIS tIH

tDS tDH

tIS tIH

tVAC

NOTE :Clock and Strobe are drawn on a different time scale.

DQS

- 60 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

Figure 26. Illustration of nominal slew rate for hold time tDH (for DQ with respect to strobe) and tIH

(for ADD/CMD with respect to clock).

VSS

Hold Slew Rate

Falling Signal

Rising Signal

Δ TR Δ TF

VREF(DC) - VIL(DC)max

Δ TR

=VIH(DC)min - VREF(DC)

Δ TF

VDDQ

VIH(AC) min

VIH(DC) min

VREF(DC)

VIL(DC) max

VIL(AC) max

nominal

slew rate

nominal

slew rate

dc to VREF

region

tIS tIH tIS tIH

dc to VREF

region

NOTE :Clock and Strobe are drawn on a different time scale.

tDS tDH tDS tDH

DQS

- 61 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

Figure 27. Illustration of tangent line for setup time tDS (for DQ with respect to strobe) and tIS

(for ADD/CMD with respect to clock)

VSS

Setup Slew Rate

Rising Signal

Falling Signal

Δ TF

Δ TR

tangent line[VREF(DC) - VIL(AC)max]

Δ TF

tangent line[VIH(AC)min - VREF(DC)]

Δ TR

VDDQ

VIH(AC) min

VIH(DC) min

VREF(DC)

VIL(DC) max

VIL(AC) max

tangent

VREF to ac

region

VREF to ac

region

line

nominal

line

nominal

line

tIS tIH tIS tIH

tVAC

NOTE :Clock and Strobe are drawn on a different time scale.

tDS tDH tDS tDH

DQS

tVAC

- 62 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

Figure 28. Illustration of tangent line for hold time tDH (for DQ with respect to strobe) and tIH

(for ADD/CMD with respect to clock)

VSS

Hold Slew Rate

Δ TF

Δ TR

tangent line [ VIH(DC)min - VREF(DC) ]

Δ TF

VDDQ

VIH(AC) min

VIH(DC) min

VREF(DC)

VIL(DC) max

VIL(AC) max

tangent

dc to VREF

region

dc to VREF

region

line

nominal

line

nominal

line

Falling Signal

Hold Slew Rate tangent line [ VREF(DC) - VIL(DC)max ]

Δ TR

Rising Signal

tIS tIH tIS tIH

NOTE :Clock and Strobe are drawn on a different time scale.

tDS tDH tDS tDH

DQS

- 67 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

16. Functional Description

Figure 29. Simplified State Diagram

16.1 Simplified State Diagram

Self

Idle

Bank

Precharging

Power

Writing

ACT

ReadA

Read

SRE

REF

PDE

PDX

PDE

Write

Automatic Sequence

Command Sequence

ReadA

WriteA

Read

PRE, PREA

Refreshing

Down

Power

Down

Active

ReadA

Reading

WriteA

Active

Precharge

Reading

Writing

Activating

SRX

Read

Write

Calibration

CKE_L

CKE_L CKE_L

PRE, PREA PRE, PREA

Write

WriteA

Initialization

Reset

Procedure

Power

Applied

RESET

from any

state

MRS, MPR,

Write

Leveling

MRS

ZQCL

ZQCL, ZQCS

[ Table 62 ] State Diagram Command Definitions

NOTE : This simplified State Diagram is intended to provide an overview of the possible state transitions and the commands to control them. In particular, situations involving

more than one bank, the enabling or disabling of on-die termination, and some other events are not captured in full detail.

Abbreviation Function Abbreviation Function Abbreviation Function

ACT Activate Read RD,RDS4, RDS8 PDE Enter Power-down

PRE Precharge Read A RDA,RDAS4, RDAS8 PDX Exit Power-down

PREA Precharge All Write WR, WRS4, WRS8 SRE Self-Refresh entry

MRS Mode Register Set Write A WRA,WRAS4, WRAS8 SRX Self-Refresh exit

REF Refresh RESET Start RESET procedure MPR Multi Purpose Register

ZQCL ZQ Calibration Long ZQCS ZQ Calibration Short - -

- 68 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

16.2 Basic Functionality

The gDDR3 SDRAM is a high-speed CMOS, dynamic random-access memory internally configured as a eight-bank DRAM. The gDDR3 SDRAM uses

a 8n prefetch architecture to achieve high-speed operation. The 8n prefetch architecture, with an interface designed to transfer two data words per clock

cycle at the I/O pins. A single read or write access for the gDDR3 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM

core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins.

Read and write operation to the gDDR3 SDRAM are burst oriented, start at a selected location, and continue for a burst length of four or eight in a pro-

grammed sequence. Operation begins with the registration of an Active command, which is then followed by a Read or Write command. The address bits

registered coincident with the Active command are used to select the bank and row to be accessed (BA0-BA2 select the bank; A0-A15 select the row).

The address bits registered coincident with the Read or Write command are used to select the starting column location for the burst operation, determine

if the auto precharge command is to be issued (via A10/AP), and the select BC4 or BL8 mode ’on the fly’ (via A12) if enabled in the mode register.

Prior to normal operation, the gDDR3 SDRAM must be powered up and initialized in a predefined manner. The following sections provide detailed infor-

mation covering device reset and initialization, register definition, command descriptions and device operation.

16.3 RESET and Initialization Procedure

16.3.1 Power-up Initialization Sequence

The following sequence is required for POWER UP and Initialization.

1. Apply power and attempt to maintain RESET below 0.2*VDD (all other inputs may be undefined). RESET needs to be maintained for minimum 200us

with stable power. CKE is pulled “ Low” anytime before RESET being de-asserted (min. time 10ns). The power voltage ramp time between 300mV to

VDD min must be no longer than 200ms; and during the ramp, VDD>VDDQ and VDD -VDDQ<0.3volts.

• VDD and VDDQ are driven from a single power converter output, AND

• The voltage levels on all pins other than VDD,VDDQ,VSS,VSSQ must be less than or equal to VDDQ and VDD on one side and must be larger than or

equal to VSSQ and VSS on the other side. In addition, VTT is limited to 0.95V max once power ramp is finished, AND

• Vref tracks VDDQ/2.

• Apply VDD without any slope reversal before or at the same time as VDDQ

• Apply VDDQ without any slope reversal before or at the same time as VTT & Vref.

• The voltage levels on all pins other than VDD,VDDQ,VSS,VSSQ must be less than or equal to VDDQ and VDD on one side and must be larger than or

equal to VSSQ and VSS on the other side.

2. After RESET is de-asserted, wait for another 500us until CKE becomes active. During this time, the DRAM will start internal initialization; this will be

done independently of external clocks.

3. Clocks (CK, CK) need to be started and stabilized for at least 10ns or 5tCK (which is larger) before CKE goes active. Since CKE is a synchronous sig-

nal, the corresponding setup time to clock (tIS) must be met. Also a NOP or Deselect command must be registered (with tIS set up time to clock)

before CKE goes active. Once the CKE registered “High” after Reset, CKE needs to be continuously registered “High” until the initialization sequence

is finished, including expiration of tDLLK and tZQinit.

4. The gDDR3 SDRAM keeps its on-die termination in high-impedance state as long as RESET is asserted. Further, the SDRAM keeps its on-die termi-

nation in high impedance state after RESET deassertion until CKE is registered HIGH. The ODT input signal may be in undefined state until tIS before

CKE is registered HIGH. When CKE is registered HIGH, the ODT input signal may be statically held at either LOW or HIGH. If RTT_NOM is to be

enabled in MR1 and the on-die termination is required to remain in the high impedance state, the ODT input signal must be statically held LOW. In all

cases, the ODT input signal remains static until the power up initialization sequence is finished, including the expiration of tDLLK and tZQinit.

5. After CKE is registered high, wait minimum of Reset CKE Exit time, tXPR, before issuing the first MRS command to load mode register.

(tXPR=Max(tXS, 5tCK)]

6. Issue MRS Command to load MR2 with all application settings. (To issue MRS command for MR2, provide “Low” to BA0 and BA2, “High” to BA1.)

7. Issue MRS Command to load MR3 with all application settings. (To issue MRS command for MR3, provide “Low” to BA2, “High” to BA0 and BA1.)

8. Issue MRS Command to load MR1 with all application settings and DLL enabled. (To issue “DLL Enable “command, provide “Low” to A0, “Low” to A0,

“High” to BA0 and “Low” to BA1-BA2)

9. Issue MRS Command to load MR0 with all application settings and “DLL reset”. (To issue DLL reset command, provide “High” to A8 and “Low” to BA0-

2).

10. Issue ZQCL command to starting ZQ calibration

11. Wait for both tDLLK and tZQ init completed

12. The gDDR3 SDRAM is now ready for normal operation.

Figure 30. RESET and Initialization Sequence at Power-on Ramping

Figure 31. RESET procedure at Power stable condition

- 69 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

NOTE :

1) From time point ‘Td’ until ‘Tk’, NOP or DES commands must be applied between MRS and ZQCL commands

16.3.2 Reset Initialization with Stable Power

The following sequence is required for RESET at no power interruption initialization.

1. Asserted RESET below 0.2 * VDD anytime when reset is needed (all other inputs may be undefined). RESET needs to be maintained for minimum 100

ns. CKE is pulled "LOW" before RESET being de-asserted (min. time 10 ns).

2. Follow Power-up Initialization Sequence step 2 to 11.

3. The Reset sequence is now completed, gDDR3 SDRAM is ready for normal operation.

NOTE :

1) From time point ‘Td’ until ‘Tk’, NOP or DES commands must be applied between MRS and ZQCL commands

VDD/VDDQ

CK,CK

RESET

Tc.Td.Te.Tf. .Th.Ti.Tj.TkTg

tCKSRX

Ta . Tb

CKE

200 us 500 us

10 ns tIS

*) MRS

MR2

MRS

MR3

MRS

MR1

MRS

MR0

ZQCL

tXPR**

tIS

tMRD tMRD tMRD

tMOD

CMD

BA[2:0]

tIS

ODT

DRAM_RTT

tDLLK

Static LOW in case RTT_Nom is eanbled at time Tg, otherwise static HIGH or LOW

tZQinit

1) VALID

VALID

tIS

VDD/VDDQ

CK,CK

RESET

Tc . Td . Te . T f . . Th . Ti . T j . T k .TgTa . T b

CKE

100 ns 500 us

10 ns tIS

1) MRS

MR2

MRS

MR3

MRS

MR1

MRS

MR0

ZQCL

tXPR

tIS

tMRD tMRD tMRD

CMD

BA[2:0]

tIS

ODT

DRAM_RTT

tCKSRX

tMOD tZQin

tDLLK

Static LOW in case RTT_Nom is eanbled at time Tg, otherwise static HIGH or LOW

1) VALID

VALID

- 70 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

16.4 Register Definition

Figure 33. tMOD Timing

Figure 32. tMRD Timing

16.4.1 Programming the Mode Registers

For application flexibility, various functions, features, and modes are programmable in four Mode Registers, provided by the gDDR3 SDRAM, as user

defined variables and they must be programmed via a Mode Register Set (MRS) command. As the default values of the Mode Registers (MR#) are not

defined, contents of Mode Registers must be fully initialized and/or re-initialized, i.e., written, after power up and/or reset for proper operation. Also the

contents of the Mode Registers can be altered by re-executing the MRS command during normal operation. When programming the mode registers, even

if the user chooses to modify only a sub-set of the MRS fields, all address fields within the accessed mode register must be redefined when the MRS com-

mand is issued. MRS command and DLL Reset do not affect array contents, which means these commands can be executed any time after power-up

without affecting the array contents.

The mode register set command cycle time, tMRD is required to complete the write operation to the mode register and is the minimum time required

between two MRS commands shown in Figure 32

The MRS command to Non-MRS command delay, tMOD, is required for the DRAM to update the features, except DLL reset, and is the minimum time

required from an MRS command to a non-MRS command excluding NOP and DES shown in Figure 33

T0 T1 T2 Ta0 Ta1 Tb0 Tb1 Tb2 Tc0 Tc1 Tc2

VALID VALID VALID MRS NOP/DES NOP/DES MRS NOP/DES NOP/DES VALID VALID

Command

VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID VALIDAddress

CKE

Settings Old Settings Updating Settings New Settings

VALID VALID VALIDODT

VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID VALIDODT

RTT_Nom ENABLED prior and/or after MRS command

RTT_Nom DISABLED prior and after MRS command

tMRD tMOD

ODTLoff + 1

Time Break Don’t Care

T0 T1 T2 Ta0 Ta1 Ta2 Ta 3 Ta 4 T b0 Tb1 Tb2

VALID VALID VALID MRS NOP/DES NOP/DES NOP/DES NOP/DES VALID VALIDCommand

VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID

Address

CKE

Settings Old Settings Updating Settings New Settings

VALID VALID VALIDODT

VALID VALID VALID VALID VALID VALID VALID VALID VALID VALID VALIDODT

RTT_Nom ENABLED prior and/or after MRS command

RTT_Nom DISABLED prior and after MRS command

tMOD

ODTLoff + 1

Time Break Don’t Care

NOP/DES

- 71 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

15.4.1 Programming the Mode Registers (Cont)

The mode register contents can be changed using the same command and timing requirements during normal operation as long as the DRAM is in idle

state, i.e., all banks are in the precharged state with tRP satisfied, all data bursts are completed and CKE is high prior to writing into the mode register. If

the RTT_NOM feature is enabled in the Mode Register prior and/or after an MRS Command, the ODT Signal must continuously be registered LOW

ensuring RTT is in an off State prior to the MRS command. The ODT Signal may be registered high after tMOD has expired. If the RTT_NOM Feature is

disabled in the Mode Register prior and after an MRS command, the ODT Signal can be registered either LOW or HIGH before, during and after the MRS

command. The mode registers are divided into various fields depending on the functionality and/or modes.

16.4.2 Mode Register MR0

Figure 34. MR0 Definition

The mode register MR0 stores the data for controlling various operating modes of gDDR3 SDRAM. It controls burst length, read burst type, CAS latency,

test mode, DLL reset, WR and DLL control for precharge power down, which include various vendor specific options to make gDDR3 SDRAM useful for

various applications. The mode register is written by asserting low on CS, RAS, CAS, WE, BA0,BA1 and BA2, while controlling the states of address pins

according to the Figure below.

NOTE :

*1 : BA2 and A13~A15 are RFU and must be programmed to 0 during MRS.

*2 : WR(write recovery for autoprecharge)min in clock cycles is calculated by dividing tWR(in ns) by tCK(in ns) and rounding up to the next integer: WRmin[cycles] =

Roundup(tWR[ns]/tCK[ns]). The WR value in the mode register must be programmed to be equal or larger than WRmin. The programmed WR value is used with tRP to

determine tDAL.

*3 : The table only shows the encodings for a given Cas Latency. For actual supported Cas Latency, please refer to speedbin tables for each frequency

*4 : The table only shows the encodings for Write Recovery. For actual Write recovery timing, please refer to AC timingtable

*5 : RFU(Reserved for Future Use)

*6 : CL16 is used for gDDR3 1Gb S-die at 2400Mbps operation.

16.4.2.1 Burst Length, Type and Order

Accesses within a given burst may be programmed to sequential or interleaved order. The burst type is selected via bit A3 as shown in Figure 34. The

ordering of accesses within a burst is determined by the burst length, burst type, and the starting column address as shown in Table 63. The burst length

is defined by bits A0-A1. Burst length options include fixed BC4, fixed BL8, and ’on the fly’ which allows BC4 or BL8 to be selected coincident with the reg-

istration of a Read or Write command via A12/BC.

Address Field

A7 mode

0Normal

1Test

A3 Read Burst Type

0 Nibble Sequential

1 Interleave

A8 DLL Reset

0No

1Yes

Mode Register 0

0TM CAS Latency RBTDLL

Write recovery for autoprecharge

A11 A10 A9 WR(cycles)

000 16*2

001 5*2

010 6*2

011 7*2

100 8*2

101 10*2

110 12*2

111 14*2

~ A

0 BL

A1 A0 BL

0 0 8 (Fixed)

0 1 4 or 8(on the fly)

1 0 4 (Fixed)

11 Reserved

BA1 BA0 MRS mode

00 MR0

01 MR1

10 MR2

11 MR3

PPD

A12 DLL Control for Pre-

charge PD

0 Slow exit (DLL off)

1 Fast exit (DLL on)

CAS Latency

A6 A5 A4 A2 Latency

0000 Reserved

0010 5

0100 6

0110 7

1000 8

1010 9

1100 10

1110 11

0001 12

0011 13

0101 14

0111

Reserved for 15*5

1001 16*6

1011 Reserved

1101 Reserved

1111 Reserved

- 72 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

[ Table 63 ] Burst Type and Burst Order

NOTE :

1. In case of burst length being fixed to 4 by MR0 setting, the internal write operation starts two clock cycles earlier than for the BL8 mode. This means that the starting point for

tWR and tWTR will be pulled in by two clocks. In case of burst length being selected on-the-fly via A12/BC, the internal write operation starts at the same point in time like a

burst of 8 write operation. This means that during on-the-fly control, the starting point for tWR and tWTR will not be pulled in by two clocks.

2. 0...7 bit number is value of CA[2:0] that causes this bit to be the first read during a burst.

3. T: Output driver for data and strobes are in high impedance.

4. V: a valid logic level (0 or 1), but respective buffer input ignores level on input pins.

5. X: Don’t Care.

16.4.2.2 CAS Latency

The CAS Latency is defined by MR0(bits A4-A6) as shown in Figure 34. CAS Latency is the delay, in clock cycles, between the internal Read command

and the availability of the first bit of output data. gDDR3 SDRAM does not support any half clock latencies. The overall Read Latency (RL) is defined as

Additive Latency (AL) + CAS Latency (CL); RL = AL + CL. For more information on the supported CL and AL settings based on the operating clock fre-

quency, refer to " Standard Speed Bins" on each component datasheet. For detailed Read operation refer to "READ Operation" on page 92

16.4.2.3 Test Mode

The normal operating mode is selected by MR0(bit A7 = 0) and all other bits set to the desired values shown in Figure 34. Programming bit A7 to a ’1’

places the gDDR3 SDRAM into a test mode that is only used by the DRAM Manufacturer and should NOT be used. No operations or functionality is guar-

anteed if A7 = 1.

16.4.2.4 DLL Reset

The DLL Reset bit is self-clearing, meaning it returns back to the value of ’0’ after the DLL reset function has been issued. Once the DLL is enabled, a

subsequent DLL Reset should be applied. Any time the DLL reset function is used, tDLLK must be met before any functions that require the DLL can be

used (i.e. Read commands or ODT synchronous operations).

16.4.2.5 Write Recovery

The programmed WR value MR0(bits A9, A10, and A11) is used for the auto precharge feature along with tRP to determine tDAL WR(write recovery for

auto-precharge)min in clock cycles is calculated by dividing tWR(in ns) by tCK(in ns) and rounding up to the next integer: WRmin[cycles] =

Roundup(tWR[ns]/tCK[ns]). The WR must be programmed to be equal or larger than tWR(min).

16.4.2.6 Precharge PD DLL

MR0 (bit A12) is used to select the DLL usage during precharge power-down mode. When MR0(A12 = 0), or "slow-exit", the DLL is frozen after entering

precharge power-down (for potential power savings) and upon exit requires tXPDLL to be met prior to the next valid command. When MR0(A12 = 1), or

"fast-exit", the DLL is maintained after entering precharge power-down and upon exiting power-down requires tXP to be met prior to the next valid com-

mand.

Burst

Length

READ/

WRITE

Starting

Column

ADDRESS

(A2,A1,A0)

burst type = Sequential

(decimal)

A3 = 0

burst type = Interleaved

(decimal)

A3 = 1

Notes

Chop

READ

0 0 0 0,1,2,3,T,T,T,T 0,1,2,3,T,T,T,T 1, 2, 3

0 0 1 1,2,3,0,T,T,T,T 1,0,3,2,T,T,T,T 1, 2, 3

0 1 0 2,3,0,1,T,T,T,T 2,3,0,1,T,T,T,T 1, 2, 3

0 1 1 3,0,1,2,T,T,T,T 3,2,1,0,T,T,T,T 1, 2, 3

1 0 0 4,5,6,7,T,T,T,T 4,5,6,7,T,T,T,T 1, 2, 3

1 0 1 5,6,7,4,T,T,T,T 5,4,7,6,T,T,T,T 1, 2, 3

1 1 0 6,7,4,5,T,T,T,T 6,7,4,5,T,T,T,T 1, 2, 3

1 1 1 7,4,5,6,T,T,T,T 7,6,5,4,T,T,T,T 1, 2, 3

WRITE 0,V,V 0,1,2,3,X,X,X,X 0,1,2,3,X,X,X,X 1, 2, 4, 5

1,V,V 4,5,6,7,X,X,X,X 4,5,6,7,X,X,X,X 1, 2, 4, 5

8READ

0 0 0 0,1,2,3,4,5,6,7 0,1,2,3,4,5,6,7 2

0 0 1 1,2,3,0,5,6,7,4 1,0,3,2,5,4,7,6 2

0 1 0 2,3,0,1,6,7,4,5 2,3,0,1,6,7,4,5 2

0 1 1 3,0,1,2,7,4,5,6 3,2,1,0,7,6,5,4 2

1 0 0 4,5,6,7,0,1,2,3 4,5,6,7,0,1,2,3 2

1 0 1 5,6,7,4,1,2,3,0 5,4,7,6,1,0,3,2 2

1 1 0 6,7,4,5,2,3,0,1 6,7,4,5,2,3,0,1 2

1 1 1 7,4,5,6,3,0,1,2 7,6,5,4,3,2,1,0 2

WRITE V,V,V 0,1,2,3,4,5,6,7 0,1,2,3,4,5,6,7 2, 4

Figure 35. MR1 Definition

- 73 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

16.4.3 Mode Register MR1

The Mode Register MR1 stores the data for enabling or disabling the DLL, output driver strength, Rtt_Nom impedance, additive latency, Write leveling

enable, TDQS enable and Qoff. The Mode Register 1 is written by asserting low on CS, RAS, CAS, WE, high on BA0 and low on BA1 and BA2 while con-

trolling the states of address pins according to the Figure below.

* 1 : BA2 and A8, A10 and A13 ~ A15 are RFU and must be programmed to 0 during MRS

Mode Register 1

Address Field

0AL

~ A

Rtt_Nom

A0 DLL Enable

0 Enable

1 Disable

NOTE : RZQ=240ohms

A5 A1 Output Driver Impedance Control

00 RZQ/6

01 RZQ/7

10 Reserved

11 Reserved

D.I.C DLL

NOTE :RZQ=240ohms

*3 : In Write leveling Mode (MR1[bit7] = 1) with

MR1[bit12]=1, all RTT_Nom settings are

allowed; in Write Leveling Mode (MR1[bit7] = 1)

with MR1[bit12]=0, only RTT_Nom settings of

RZQ/2, RZQ/4 and RZQ/6 are allowed

*4 : If RTT_Nom is used during Writes, only the

values RZQ/2,RZQ/4 and RZQ/6 are allowed

A9 A6 A2 Rtt_Nom*3

0 0 0 Rtt Nom disabled

001 RZQ/4

010 RZQ/2

011 RZQ/6

100 RZQ/12*4

101 RZQ/8*4

1 1 0 Reserved

1 1 1 Reserved

A7 Write leveling enable

0 Disabled

1 Enabled

A4 A3 Additive Latency

0 0 0 (AL disabled)

01 CL-1

10 CL-2

11 Reserved

*2: Outputs disabled - DQs, DQSs, DQSs.

A12 Qoff *2

0 Output buffer enabled

1Output buffer disabled *2

Qoff Level

TDQS

Rtt_Nom

D.I.C

A11 TDQS enable

0 Disabled

1 Enabled

Rtt_Nom

BA1 BA0 MRS mode

00 MR0

01 MR1

10 MR2

11 MR3

- 74 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

16.4.3.1 DLL Enable/Disable

The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon returning to normal operation after having

the DLL disabled. During normal operation (DLL-on) with MR1(A0 = 0), the DLL is automatically disabled when entering Self-Refresh operation and is

automatically re-enabled upon exit of Self- Refresh operation. Any time the DLL is enabled and subsequently reset, tDLLK clock cycles must occur before

a Read or synchronous ODT command can be issued to allow time for the internal clock to be synchronized with the external clock. Failing to wait for syn-

chronization to occur may result in a violation of the tDQSCK, tAON or tAOF parameters. During tDLLK, CKE must continuously be registered high.

gDDR3 SDRAM does not require DLL for any Write operation. For more detailed information on DLL Disable operation refer to "DLL-off Mode" on

page 80

The direct ODT feature is not supported during DLL-off mode. The on-die termination resistors must be disabled by continuously registering the ODT pin

low and/or by programming the RTT_Nom bits MR1{A9,A6,A2} to {0,0,0} via a mode register set command during DLL-off mode.

The dynamic ODT feature is not supported at DLL-off mode. User must use MRS command to set Rtt_WR, MR2{A10, A9}={0,0}, to disable Dynamic ODT

externally.

16.4.3.2 Output Driver Impedance Control

The output driver impedance of the gDDR3 SDRAM device is selected by MR1(bits A1 and A5) as shown in Figure 35

16.4.3.3 ODT Rtt Values

gDDR3 SDRAM is capable of providing two different termination values (Rtt_Nom and Rtt_WR). The nominal termination value Rtt_Nom is programmed

in MR1. A separate value (Rtt_WR) may be programmed in MR2 to enable a unique RTT value when ODT is enabled during writes. The Rtt_WR value

can be applied during writes even when Rtt_Nom is disabled.

16.4.3.4 Additive Latency (AL)

Additive Latency (AL) operation is supported to make command and data bus efficient for sustainable bandwidths in gDDR3 SDRAM. In this operation,

the gDDR3 SDRAM allows a read or write command (either with or without auto-precharge) to be issued immediately after the active command. The com-

mand is held for the time of the Additive Latency (AL) before it is issued inside the device. The Read Latency (RL) is controlled by the sum of the AL and

CAS Latency (CL) register settings. Write Latency (WL) is controlled by the sum of the AL and CAS Write Latency (CWL) register settings. A summary of

the AL register options are shown in Table 64

[ Table 64 ] Additive Latency (AL) Settings

NOTE : AL has a value of CL - 1 or CL - 2 as per the CL values programmed in the MR0 register.

16.4.3.5 Write leveling

For better signal integrity, gDDR3 memory module adopted fly by topology for the commands, addresses, control signals and clocks. The fly by topology

has benefits from reducing number of stubs and their length but in other aspect, causes flight time skew between clock and strobe at every DRAM on

DIMM. It makes it difficult for the Controller to maintain tDQSS, tDSS and tDSH specification. Therefore, the gDDR3 SDRAM supports ’write leveling’ fea-

ture to allow the controller to compensate for skew. See "Write Leveling" on page 84. for more details.

16.4.3.6 Output Disable

The gDDR3 SDRAM outputs may be enabled/disabled by MR1(bit A12) as shown in Figure 35. When this feature is enabled (A12 = 1), all output pins

(DQs, DQS, DQS, etc.) are disconnected from the device removing any loading of the output drivers. This feature may be useful when measuring module

power for example. For normal operation, A12 should be set to ’0’.

A4 A3 AL

0 0 0 (AL Disabled)

01 CL - 1

10 CL - 2

11Reserved

- 75 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

16.4.3.7 TDQS, TDQS

TDQS (Termination Data Strobe) is a feature of X8 gDDR3 SDRAM that provides additional termination resistance outputs that may be useful in some

system configurations.

TDQS is not supported in X4 or X16 configurations. When enabled via the mode register, the same termination resistance function is applied to the

TDQS/TDQS pins that is applied to the DQS/DQS pins.

In contrast to the RDQS function of DDR2 SDRAM, TDQS provides the termination resistance function only. The data strobe function of RDQS is not pro-

vided by TDQS.

The TDQS and DM functions share the same pin. When the TDQS function is enabled via the mode register, the DM function is not supported. When the

TDQS function is disabled, the DM function is provided and the TDQS pin is not used. Table 65 for details.

The TDQS function is available in X8 gDDR3 SDRAM only and must be disabled via the mode register A11=0 in MR1 for X4 and X16 configurations.

[ Table 65 ] TDQS, TDQS Function Matrix

NOTE :

1. If TDQS is enabled, the DM function is disabled.

2. When not used, TDQS function can be disabled to save termination power.

3. TDQS function is only available for x8 DRAM and must be disabled for x4 and x16.

MR1(A11) DM / TDQS NU / TDQS

0 (TDQS Disabled) DM Hi-Z

1 (TDQS Enabled) TDQS TDQS

Figure 36. MR2 Definition

- 76 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

16.4.4 Mode Register MR2

The Mode Register MR2 stores the data for controlling refresh related features, Rtt_WR impedance, and CAS write latency. The Mode Register 2 is writ-

ten by asserting low on CS, RAS, CAS, WE, high on BA1 and low on BA0 and BA2, while controlling the states of address pins according to the table

below.

Mode Register 2

Address Field

~ A

00*

PASR*

A2 A1 A0 Partial Array Self Refresh (Optional)

000Full Array

0 0 1 HalfArray (BA[2:0]=000,001,010, & 011)

0 1 0 Quarter Array (BA[2:0]=000, & 001)

0 1 1 1/8th Array (BA[2:0] = 000)

1 0 0 3/4 Array (BA[2:0] = 010,011,100,101,110, & 111)

1 0 1 HalfArray (BA[2:0] = 100, 101, 110, &111)

1 1 0 Quarter Array (BA[2:0]=110, &111)

1 1 1 1/8th Array (BA[2:0]=111)

* 1 : BA2, A5, A8, A11 ~ A15 are RFU and must be programmed to 0 during MRS.

* 2 : The Rtt_WR value can be applied during writes even when Rtt_Nom is disabled.

During write leveling, Dynamic ODT is not available.

SRF ASR CWL

A5 A4 A3 CAS write Latency (CWL)

000 5 (tCK(avg)≥2.5ns)

0 0 1 6 (2.5ns >tCK(avg)≥1.875ns)

0 1 0 7 (1.875ns>tCK(avg)≥1.5ns)

0 1 1 8 (1.5ns>tCK(avg)≥1.25ns)

1 0 0 9 (1.25ns>tCK(avg)≥1.07ns)

1 0 1 10 (1.07ns>tCK(avg)≥0.935ns)

1 1 0 11 (0.935ns>tCK(avg)≥0.833ns)

1 1 1 12 (0.833ns>tCK(avg)≥0.75ns)

A7 Self-refresh temperature range(SRT)

0 Normal operating temperature range

1 Extend temperature self-refresh (Optional)

Rtt_WR

A10 A9 Rtt_WR*2

00 Dynamic ODT off

(Write does not affect Rtt value)

01 RZQ/4

10 RZQ/2

11 Reserved

BA1 BA0 MRS mode

00 MR0

01 MR1

10 MR2

11 MR3

A6 Auto Self-refresh (ASR)

0 Manual SR reference (SRT)

1 ASR enable (Optional)

Figure 37. MR3 Definition

- 77 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

16.4.4.1 Partial Array Self-Refresh (PASR)

Optional in gDDR3 SDRAM: Users should refer to the DRAM component data sheet and/or the DIMM SPD to determine if gDDR3 SDRAM devices sup-

port the following options or requirements referred to in this material. If PASR (Partial Array Self-Refresh) is enabled, data located in areas of the array

beyond the specified address range shown in Figure 36 will be lost if Self-Refresh is entered. Data integrity will be maintained if tREFI conditions are met

and no

Self-Refresh command is issued.

16.4.4.2 CAS Write Latency (CWL)

The CAS Write Latency is defined by MR2 (bits A3-A5), as shown in Figure 36. CAS Write Latency is the delay, in clock cycles, between the internal Write

command and the availability of the first bit of input data. gDDR3 SDRAM does not support any half clock latencies. The overall Write Latency (WL) is

defined as Additive Latency (AL) + CAS Write Latency (CWL); WL = AL + CWL. For more information on the supported CWL and AL settings based on

the operating clock frequency, refer to "Standard Speed Bins" on each component datasheet. For detailed Write operation refer to "WRITE Operation" on

page 103

16.4.4.3 Auto Self-Refresh (ASR) and Self-Refresh Temperature (SRT)

Optional in gDDR3 SDRAM: Users should refer to the DRAM component data sheet and/or the DIMM SPD to determine if gDDR3 SDRAM devices sup-

port the following options or requirements referred to in this material. For more details refer to ’Extended Temperature Usage’ gDDR3 SDRAM’s must

support Self-Refresh operation at all supported temperatures. Applications requiring Self-Refresh operation in the Extended Temperature Range must

use the optional ASR function or program the SRT bit appropriately.

16.4.4.4 Dynamic ODT (Rtt_WR)

gDDR3 SDRAM introduces a new feature "Dynamic ODT’. In certain application cases and to further enhance signal integrity on the data bus, it is desir-

able that the termination strength of the gDDR3 SDRAM can be changed without issuing an MRS command. MR2 Register locations A9 and A10 config-

ure the Dynamic ODT settings. In Write leveling mode, only RTT_Nom is available. For details on ODT operation, refer to "Dynamic ODT" on page 124.

16.4.5 Mode Register MR3

The Mode Register MR3 controls Multi purpose registers. The Mode Register 3 is written by asserting low on CS, RAS, CAS, WE, high on BA1 and BA0,

while controlling the states of address pins according to the table below.

16.4.5.1 Multi-Purpose Register (MPR)

The Multi Purpose Register (MPR) function is used to Read out a predefined system timing calibration bit sequence. To enable the MPR, a MODE Regis-

ter Set (MRS) command must be issued to MR3 Register with bit A2 = 1. Prior to issuing the MRS command, all banks must be in the idle state (all banks

precharged and tRP/tRPA met). Once the MPR is enabled, any subsequent RD or RDA commands will be redirected to the Multi Purpose Register. When

the MPR is enabled, only RD or RDA commands are allowed until a subsequent MRS command is issued with the MPR disabled (MR3 bit A2 = 0).

Power-Down mode, Self-Refresh, and any other non-RD/RDA command is not allowed during MPR enable mode. The RESET function is supported dur-

ing MPR enable mode. For detailed MPR operation refer to "Multi Purpose Register" on page 88.

Mode Register 3

Address Field

~ A

1 0*

MPR Address

A1 A0 MPR location

00 Predefined pattern*2

01 RFU

10 RFU

11 RFU

MPR Operation

A2 MPR

0Normal operation*3

1 Dataflow from MPR

MPR Loc MPR

* 1 : BA2, A3 - A15 are RFU and must be programmed to 0 during MRS.

* 2 : The predefined pattern will be used for read synchronization.

* 3 : When MPR control is set for normal operation, MR3 A[2]=0, MR3 A[1:0] will be ignored

BA1 BA0 MRS mode

00 MR0

01 MR1

10 MR2

11 MR3

- 78 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17. gDDR3 SDRAM Command Description and Operation

17.1 Command Truth Table

a) Note 1,2,3 and 4 apply to the entire Command truth table

(b) Note 5 applies to all Read/Write commands.

[BA=Bank Address, RA=Row Address, CA=Column Address, BC=Burst Chop, X=Don’t care, V=Valid]

[ Table 66 ] Command Truth Table

NOTE :

1. All gDDR3 SDRAM commands are defined by states of CS, RAS, CAS, WE and CKE at the rising edge of the clock. The MSB of BA, RA, and CA are

device density and configuration dependant

2. RESET is Low enable command which will be used only for asynchronous reset so must be maintained HIGH during any function.

3. Bank addresses (BA) determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode Register

4. “V” means “H or L (but a defined logic level)” and “X” means either “defined or undefined (like floating) logic level”

5. Burst reads or writes cannot be terminated or interrupted and Fixed/on the fly BL will be defined by MRS

6. The Power Down Mode does not perform any refresh operations.

7. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.

8. Self refresh exit is asynchronous.

9. VREF(Both VREFDQ and VREFCA) must be maintained during Self Refresh operation. VrefDQ supply man be turned OFF in system during Self Refresh operation, provided

that VrefDQ is valid and stable prior to CKE going back High and that first Write operation may not occur earlier than 512nCK after exit from Self Refresh.

10. The No Operation command should be used in cases when the gDDR3 SDRAM is in an idle or a wait state. The purpose of the No Operation

command (NOP) is to prevent the gDDR3 SDRAM from registering any unwanted commands between operations. A No Operation command will not

terminate a previous operation that is still executing, such as a burst read or write cycle.

11. The Deselect command performs the same function as a No Operation command.

12. Refer to the CKE Truth Table for more detail with CKE transition

Function Abbreviation

CKE

CS RAS CAS WE

BA0

BA2

A13

A15

A12

A10

A9,A11

NOTE

Cycle

Current

Cycle

Mode Register Set MRS H H L L L L BA OP Code

Refresh REF H H LLLHVVVV V

Self Refresh Entry SRE H L LLLHVVVV V 7,9,12

Self Refresh Exit SRX L H HVVVXXXX X 7,8,9,12

LHHHVVVV V

Single Bank Precharge PRE H H L L H L BA V V L V

Precharge all Banks PREA H H L L H L V V V H V

Bank Activate ACT H H L L H H BA Row Address (RA)

Write (Fixed BL8 or BL4) WR H H L H L L BA RFU V L CA

Write (BL4, on the Fly) WRS4 H H L H L L BA RFU L L CA

Write (BL8, on the Fly) WRS8 H H L H L L BA RFU H L CA

Write with Auto Precharge

(Fixed BL8 or BL4) WRA H H L H L L BA RFU V H CA

Write with Auto Precharge

(BL4, on the Fly) WRAS4 H H L H L L BA RFU L H CA

Write with Auto Precharge

(BL8, on the Fly) WRAS8 H H L H L L BA RFU H H CA

Read (Fixed BL8 or BL4) RD H H L H L H BA RFU V L CA

Read (BL4, on the Fly) RDS4 H H L H L H BA RFU L L CA

Read (BL8, on the Fly) RDS8 H H L H L H BA RFU H L CA

Read with Auto Precharge

(Fixed BL8 or BL4) RDA H H L H L H BA RFU V H CA

Read with Auto Precharge

(BL4, on the Fly) RDAS4 H H L H L H BA RFU L H CA

Read with Auto Precharge

(BL8, on the Fly) RDAS8 H H L H L H BA RFU H H CA

No Operation NOP H H LHHHVVVV V 10

Device Deselected DES H H HXXXXXXX X 11

ZQ calibration Long ZQCL H H L H H L X X X H X

ZQ calibration Short ZQCS H H L H H L X X X L X

Power Down Entry PDE H L LHHHVVVV V 6,12

HVXXXXXX X

Power Down Exit PDX L H LHHHVVVV V 6,12

HXXXXXXX X

- 79 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.2 Clock Enable (CKE) Truth Table

(a) Note 1~7 apply to the entire Command truth table

(b) For Power-down entry and exit parameters See 17.17, ?$paratext>,? on page 113

[ Table 67 ] CKE Truth Table

NOTE :

1. CKE (N) is the logic state of CKE at clock edge N; CKE (N–1) was the state of CKE at the previous clock edge.

2. Current state is defined as the state of the gDDR3 SDRAM immediately prior to clock edge N

3. COMMAND (N) is the command registered at clock edge N, and ACTION (N) is a result of COMMAND (N), ODT is not included here

4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document

5. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh

6. CKE must be registered with the same value on tCKEmin consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to achieve the

tCKEmin clocks of registeration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + tCKEmin + tIH.

7. DESELECT and NOP are defined in the Command truth table

8. On Self Refresh Exit DESELECT or NOP commands must be issued on every clock edge occurring during the tXS period. Read or ODT commands may be issued only after

tXSDLL is satisfied.

9. Self Refresh mode can only be entered from the All Banks Idle state.

10. Must be a legal command as defined in the Command Truth Table.

11. Valid commands for Power Down Entry and Exit are NOP and DESELECT only.

12. Valid commands for Self Refresh Exit are NOP and DESELECT only.

13. Self Refresh can not be entered while Read or Write operations. See Figure 17.16 and Figure 17.17 for a detailed list of restrictions.

14. The Power Down does not perform any refresh operations.

15. “X” means “don’t care (including floating around VREF)” in Self Refresh and Power Down. It also applies to Address pins

16. VREF (Both VREFDQ and VREFCA) must be maintained during Self Refresh operation. VrefDQ supply man be turned OFF in system during Self Refresh operation, provided

that VrefDQ is valid and stable prior to CKE going back High and that first Write operation may not occur earlier than 512nCK after exit from Self Refresh.

17. If all banks are closed at the conclusion of the read, write or precharge command, then Precharge Power Down is entered, otherwise Active Power Down is entered

18. ‘Idle state’ means that all banks are closed(tRP,tDAL,etc. satisfied) and CKE is high and all timings from previous operations are satisfied

(tMRD,tMOD,tRFC,tZQinit,tZQoper,tZQCS,etc)as well as all SRF exit and Power Down exit parameters are satisfied (tXS,tXP,tXPDLL,etc)

17.3 No OPeration (NOP) Command

The No OPeration (NOP) command is used to instruct the selected gDDR3 SDRAM to perform a NOP (CS LOW and RAS, CAS, and WE HIGH). This

prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected.

17.4 Deselect Command

The DESELECT function (CS HIGH) prevents new commands from being executed by the gDDR3 SDRAM. The gDDR3 SDRAM is effectively dese-

lected. Operations already in progress are not affected.

Current State 2

CKE Command (N) 3

RAS, CAS, WE, CS

Action (N) 3NOTE

Previous Cycle 1

(N-1)

Current Cycle 1

(N)

Power Down L L X Maintain Power-Down 14, 15

L H DESELECT or NOP Power Down Exit 11, 14

Self Refresh L L X Maintain Self Refresh 15, 16

L H DESELECT or NOP Self Refresh Exit 8, 12, 16

Bank(s) Active H L DESELECT or NOP Active Power Down Entry 11, 13, 14

Reading H L DESELECT or NOP Power Down Entry 11, 13, 14, 17

Writing H L DESELECT or NOP Power Down Entry 11, 13, 14, 17

Precharging H L DESELECT or NOP Power Down Entry 11, 13, 14, 17

Refreshing H L DESELECT or NOP Precharge Power Down Entry 11

All Banks Idle H L DESELECT or NOP Precharge Power Down Entry 11,13, 14, 18

H L REFRESH Self Refresh Entry 9, 13, 18

For more details with all signals See Table 66 "Command Truth Table" on page 78 10

Figure 38. DLL-off mode READ Timing Operation

- 80 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.5 DLL-off Mode

gDDR3 DLL-off mode is entered by setting MR1 bit A0 to "1"; this will disable the DLL for subsequent operations until A0 bit set back to "0" The MR1 A0

bit for DLL control can be switched either during initialization or later. Refer to"Input clock frequency change" on page 83.

The DLL-off Mode operations listed below are an optional feature for gDDR3. The maximum clock frequency for DLL-off Mode is specified by the param-

eter tCKDLL-OFF. There is no minimum frequency limit besides the need to satisfy the refresh interval, tREFI.

Due to latency counter and timing restrictions, only one value of CAS Latency (CL) in MR0 and CAS Write Latency (CWL) in MR2 are supported. The

DLL-off mode is only required to support setting of both CL=6 and CWL=6.

DLL-off mode will affect the Read data Clock to Data Strobe relationship (tDQSCK), but not the Data Strobe to Data relationship (tDQSQ, tQH). Special

attention is needed to line up Read data to controller time domain.

Comparing with DLL-on mode, where tDQSCK starts from the rising clock edge (AL+CL) cycles after the Read command, the DLL-off mode tDQSCK

starts (AL+CL - 1) cycles after the read command. Another difference is that tDQSCK may not be small compared to tCK (it might even be larger than

tCK) and the difference between tDQSCKmin and tDQSCKmax is significantly larger than in DLL-on mode.

The timing relations on DLL-off mode READ operation have shown at following Timing Diagram (CL=6, BL=8):

NOTE : The tDQSCK is used here for DQS, DQS and DQ to have a simplified diagram; the DLL_off shift will affectboth timings in the same way and the skew between all DQ

and DQS, DQS signals will still be tDQSQ.

DQSdiff_DLL_on

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11

ABA

CMD

DQ_DLL_on QA0 QA1 QA2 QA3 QA4 QA5 QA6 QA7

RL=AL+CL=6 (CL=6, AL=0)

CL=6

RL (DLL_off) = AL + (CL-1) = 5

QA0 QA1 QA2 QA3 QA4 QA5 QA6 QA7

tDQSCK(DLL_off)_min

tDQSCK(DLL_off)_max

DQSdiff_DLL_off

DQ_DLL_off

DQSdiff_DLL_off

DQ_DLL_off

- 81 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.6 DLL on/off switching procedure

Figure 39. DLL Switch Sequence from DLL-on to DLL-off

gDDR3 DLL-off mode is entered by setting MR1 bit A0 to "1"; this will disable the DLL for subsequent operations until A0 bit set back to "0".

17.6.1 DLL "on" to DLL "off" Procedure

To switch from DLL "on" to DLL "off" requires the frequency to be changed during Self-Refresh outlined in the following procedure:

1. Starting from Idle state (All banks pre-charged, all timings fulfilled, and DRAMs On-die Termination resistors, RTT, must be in high impedance state

before MRS to MR1 to disable the DLL.)

2. Set MR1 bit A0 to "1" to disable the DLL.

3. Wait tMOD.

4. Enter Self Refresh Mode; wait until (tCKSRE) is satisfied.

5. Change frequency, in guidance with "Input clock frequency change" on page 83

6. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs.

7. Starting with the Self Refresh Exit command, CKE must continuously be registered HIGH until all tMOD timings from any MRS command are satisfied.

In addition, if any ODT features were enabled in the mode registers when Self Refresh mode was entered, the ODT signal must continuously be regis-

tered LOW until all tMOD timings from any MRS command are satisfied. If both ODT features were disabled in the mode registers when Self Refresh

mode was entered, ODT signal can be registered LOW or HIGH.

8. Wait tXS, then set Mode Registers with appropriate values (especially an update of CL, CWL and WR may be necessary. A ZQCL command may also

be issued after tXS)

9. Wait for tMOD, then DRAM is ready for next command.

NOTE :

1. Starting with Idle State, RTT in Hi-Z state

2. Disable DLL by setting MR1 Bit A0 to 1

3. Enter SR

4. Change Frequency

5. Clock must be stable tCKSRX

6. Exit SR

7. Update Mode registers with DLL off parameters setting

8. Any valid command

T0 T1 Ta0 Ta1 Tb0 Tc0 Td0 Td1 Te0 Te1

CKE

ODT

Tf0

VALID

MRS(2) VALID SRE(3) NOP SRX(6) MRS(7) NOP VALID(8)Command NOP

(1) tMOD tCKSRE (4) tCKSRX(5) tXS tMOD

tCKESR

VALID(8)

ODT : Static LOW in case RTT_Nom and RTT_WR is enabled, otherwise staitc Low or High Time Break Don’t Care

Figure 40. DLL Switch Sequence from DLL-off to DLL-on

- 82 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.6.2 DLL "off" to DLL "on" Procedure

To switch from DLL "off" to DLL "on" (with required frequency change) during Self-Refresh:

1. Starting from Idle state (All banks pre-charged, all timings fulfilled and DRAMs On-die Termination resistors (RTT) must be in high impedance state

before Self-Refresh mode is entered.)

2. Enter Self Refresh Mode, wait until tCKSRE satisfied.

3. Change frequency, in guidance with "Input clock frequency change" on page 83

4. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs.

5. Starting with the Self Refresh Exit command, CKE must continuously be registered HIGH until tDLLK timing from subsequent DLL Reset command is

satisfied. In addition, if any ODT features were enabled in the mode registers when Self Refresh mode was entered, the ODT signal must continuously

be registered LOW until tDLLK timings from subsequent DLL Reset command is satisfied. If both ODT features are disabled in the mode registers when

Self Refresh mode was entered, ODT signal can be registered LOW or HIGH.

6. Wait tXS, then set MR1 bit A0 to "0" to enable the DLL.

7. Wait tMRD, then set MR0 bit A8 to "1" to start DLL Reset.

8. Wait tMRD, then set Mode Registers with appropriate values (especially an update of CL, CWL and WR may be necessary. After tMOD satisfied from

any proceeding MRS command, a ZQCL command may also be issued during or after tDLLK.)

9. Wait for tMOD, then DRAM is ready for next command (Remember to wait tDLLK after DLL Reset before applying command requiring a locked DLL!).

In addition, wait also for tZQoper in case a ZQCLcommand was issued.

NOTE :

1. Starting with Idle State

2. Enter SR

3. Change Frequency

4. Clock must be stable tCKSRX

5. Exit SR

6. Set DLL on by MR1 A0=0

7. Update Mode registers

8. Any valid command

T0 Ta 0 Ta 1 T b0 Tc 0 Tc1 T d0 Te0 Tf1 Tg0

CKE

ODT

Th0

VALID

NOP SRE(2) SRX(5) MRS(7) MRS(8) VALID(9)

MRS(6)

(1) DOTLoff + 1 x tCK (3) tCKSRX(4) tXS tMRD

tCKESR

ODT : Static LOW in case RTT_Nom and RTT_WR is enabled, otherwise staitc Low or High Time Break Don’t Care

Command NOP

tDLLK

tMRD

Figure 41. Change Frequency during Precharge Power-down

- 83 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.7 Input clock frequency change

Once the gDDR3 SDRAM is initialized, the gDDR3 SDRAM requires the clock to be "stable" during almost all states of normal operation. This means

once the clock frequency has been set and is to be in the "stable state", the clock period is not allowed to deviate except for what is allowed for by the

clock jitter and SSC (spread spectrum clocking) specifications.

The input clock frequency can be changed from one stable clock rate to another stable clock rate under two conditions:

(1) Self-Refresh mode and (2) Precharge Power-down mode. Outside of these two modes, it is illegal to change the clock frequency.

For the first condition, once the gDDR3 SDRAM has been successfully placed in to Self-Refresh mode and tCKSRE has been satisfied, the state of the

clock becomes a don’t care. Once a don’t care, changing the clock frequency is permissible, provided the new clock frequency is stable prior to tCKSRX.

When entering and exiting Self-Refresh mode for the sole purpose of changing the clock frequency, the Self-Refresh entry and exit specifications must

still be met as outlined in See Figure 17.16. The gDDR3 SDRAM input clock frequency is allowed to change only within the minimum and maximum oper-

ating frequency specified for the particular speed grade. Any frequency change below the minimum operating frequency would require the use of DLL_on-

mode -> DLL_off -mode transition sequence, refer to "DLL on/off switching procedure" on page 81

The second condition is when the gDDR3 SDRAM is in Precharge Power-down mode (either fast exit mode or slow exit mode). If the RTT_NOM feature

was enabled in the mode register prior to entering Precharge power down mode, the ODT signal must continuously be registered LOW ensuring RTT is in

an off state. If the RTT_NOM feature was disabled in the mode register prior to entering Precharge power down mode, RTT will remain in the off state.

The ODT signal can be registered either LOW or HIGH in this case.. A minimum of tCKSRE must occur after CKE goes LOW before the clock frequency

may change. The gDDR3 SDRAM input clock frequency is allowed to change only within the minimum and maximum operating frequency specified for

the particular speed grade. During the input clock frequency change, ODT and CKE must be held at stable LOW levels. Once the input clock frequency is

changed, stable new clocks must be provided to the DRAM tCKSRX before Precharge Power-down may be exited; after Precharge Power-down is exited

and tXP has expired, the DLL must be RESET via MRS. Depending on the new clock frequency additional MRS commands may need to be issued to

appropriately set the WR, CL, and CWL with CKE continuously registered high. During DLL re-lock period, ODT must remain LOW and CKE must remain

HIGH. After the DLL lock time, the DRAM is ready to operate with new clock frequency. This process is depicted in Figure 41 below.

NOTE :

1. Applicable for both SLOW EXIT and FAST EXIT Precharge Power-down

2. tAOFPD and tAOF must be statisfied and outputs High-Z prior to T1; refer to ODT timing section for exact requirements

3. If the RTT_NOM feature was enabled in the mode register prior to entering Precharge power down mode, the ODT signal must continuously be registered

LOW ensuring RTT is in an off state, as shown in Figure 41. If the RTT_NOM feature was disabled in the mode register prior to entering Precharge power down

mode, RTT will remain in the off state. The ODT signal can be registered either LOW or HIGH in this case.

T0 T1 T2 Ta0 Tb0 Tc0 Tc1 Td0 Td1 Te0 Te1

ADDR

CMD

tCH

tAOFPD / tAOF

tCL

tCK

CKE

tIH tIS

tCKSRE

tCKE

tIH

tIS

tCHb tCLb

tCKb

tCKSRX

tCHb tCLb

tCKb

tCHb tCLb

tCKb

NOP NOP NOP NOP NOP MRS NOP VALID

DLL RESET VALID

ODT tIS

tIH

tXP

DQS

High-Z

DQ High-Z

Enter PRECHARGE

Power-Down Mode

Frequency

Change

Exit PRECHARGE

Power-Down Mode

tDLLK

DON’T CARE

Previous clock frequency New clock frequency

Figure 42. Write leveling concept

- 84 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.8 Write Leveling

For better signal integrity, gDDR3 memory module adopted fly by topology for the commands, addresses, control signals and clocks. The fly by topology

has benefits from reducing number of stubs and their length but in other aspect, causes flight time skew between clock and strobe at every DRAM on

DIMM. It makes it difficult for the Controller to maintain tDQSS, tDSS and tDSH specification. Therefore, the controller should support ’write leveling’ in

gDDR3 SDRAM to compensate the skew.

The memory controller can use the ’write leveling’ feature and feedback from the gDDR3 SDRAM to adjust the DQS - DQS to CK - CK relationship. The

memory controller involved in the leveling must have adjustable delay setting on DQS - DQS to align the rising edge of DQS - DQS with that of the clock

at the DRAM pin. DRAM asynchronously feeds back CK - CK, sampled with the rising edge of DQS - DQS, through the DQ bus. The controller repeatedly

delays DQS - DQS until a transition from 0 to 1 is detected.

The DQS - DQS delay established though this exercise would ensure tDQSS specification. Besides tDQSS, tDSS and tDSH specification also needs to

be fulfilled. One way to achieve this is to combine the actual tDQSS in the application with an appropriate duty cycle and jitter on the DQS - DQS signals.

Depending on the actual tDQSS in the application, the actual values for tDQSL and tDQSH may have to be better than the absolute limits provided in the

chapter "AC Timing Parameters" in order to satisfy tDSS and tDSH specification. A conceptual timing of this scheme is shown in Figure 42.

DQS/DQS driven by the controller during leveling mode must be terminated by the DRAM based on ranks populated. Similarly, the DQ bus driven by the

DRAM must also be terminated at the controller.

One or more data bits should carry the leveling feedback to the controller across the DRAM configurations X4, X8, and X16. On a X16 device, both byte

lanes should be leveled independently. Therefore, a separate feedback mechanism should be available for each byte lane. The upper data bits should

provide the feedback of the upper diff_DQS(diff_UDQS) to clock relationship whereas the lower data bits would indicate the lower diff_DQS(diff_LDQS)

to clock relationship.

17.8.1 DRAM setting for write leveling & DRAM termination function in that mode

DRAM enters into Write leveling mode if A7 in MR1 set "High" and after finishing leveling, DRAM exits from write leveling mode if A7 in MR1 set "Low"

(Table 68). Note that in write leveling mode, only DQS/DQS terminations are activated and deactivated via ODT pin not like normal operation (Table 69).

[ Table 68 ] MR setting involved in the leveling procedure

[ Table 69 ] DRAM termination function in the leveling mode

NOTE : In Write Leveling Mode with its output buffer disabled (MR1[bit7] = 1 with MR1[bit12] = 1) all RTT_Nom settings are allowed; in Write Leveling Mode with its output buf-

fer enabled (MR1[bit7] = 1 with MR1[bit12] = 0) only RTT_Nom settings of RZQ/2, RZQ/4 and RZQ/6 are allowed.

Function MR1 Enable Disable

Write leveling enable A7 1 0

Output buffer mode (Qoff) A12 0 1

ODT pin @DRAM DQS/DQS termination DQs termination

De-asserted Off Off

Asserted On Off

T0 T1 T2 T3 T4 T5 T6 T7

Tn T0 T1 T2 T3 T4 T5 T6

Souce

Destination

diff_DQS

o or 1 0 0 0

Push DQS to capture 0-1

transition

0 or 1 111

Figure 43. Timing details of Write leveling sequence [DQS-DQS is capturing CK-CK low at T1 and CK-CK high at T2]

- 85 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.8.2 Procedure Description

The Memory controller initiates Leveling mode of all DRAMs by setting bit 7 of MR1 to 1. With entering write leveling mode, the DQ pins are in undefined

driving mode. During write leveling mode, only NOP or DESELECT commands are allowed, as well as an MRS command to change Qoff bit (MR1[A12])

and an MRS command to exit (MR1[A7]). Upon exiting write leveling mode, the MRS command performing the exit (MR1[A7]=0) may also change MR1

bits of A12-A11, A9, A6-A5 and A2-A1, Since the controller levels one rank at a time, the output of other ranks must be disabled by setting MR1 bit A12 to

1. The controller may assert ODT after tMOD, at which time the DRAM is ready to accept the ODT signal.

The Controller may drive DQS low and DQS high after a delay of tWLDQSEN, at which time DRAM has applied on-die termination on these signals. After

tDQSL and tWLMRD, controller provides a single DQS, DQS edge which is used by the DRAM to sample CK driven from controller. tWLMRD(max) timing

is controller dependent.

DRAM samples CK status with rising edge of DQS and provides feedback on all the DQ bits asynchronously after tWLO timing. There is a DQ output

uncertainty of tWLOE defined to allow mismatch on DQ bits; there are no read strobes (DQS/DQS) needed for these DQs. Controller samples incoming

DQ and decides to increment or decrement DQS delay setting and launches the next DQS/DQS pulse after some time, which is controller dependent.

Once a 0 to 1 transition is detected, the controller locks DQS delay setting and write leveling is achieved for the device.

Figure 43 describes the timing diagram and parameters for the overall Write Leveling procedure.

NOTE *:

1. DRAM has the option to drive leveling feedback on a prime DQ or all DQs. If feedback is driven only on one DQ, the remaining DQs must be driven low,

as shown in above Figure, and maintained at this state through out the leveling procedure.

2. MRS : Load MR1 to enter write leveling mode

3. NOP : NOP or deselect

4. diff_DQS is the differential data strobe (DQS-DQS). Timing reference points are the zero crossings. DQS is shown with solid line, DQS is shown with dotted line

5. CK/CK : CK is shown with solid dark line, where as CK is drawn with dotted line.

6. DQS, DQS needs to fulfill minimum pulse width requirements tDQSH(min) and tDQSL(min) as defined for regular Writes; the max pulse width is system dependent

T1 T2

tWLH

tWLS

tWLH

tWLS

(3)(2)

MRS NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

tWLDQSEN tDQSL(6) tDQSH(6) tDQSL(6) tDQSH(6)

tWLMRD tWLO tWLO

tWLO

tWLO tWLOE

tWLMRD tWLO

tWLO tWLOE

tWLOE

tWLO

CK(5)

COMMAND

ODT

diff_DQS(4)

One Prime DQ:

Prime DQ(1)

Late Remaining DQs

Early Remaining DQs

All DQs are Prime:

Late Prime DQs(1)

Early Prime DQs(1)

tMOD

Figure 44. Timing details of Write leveling exit

- 86 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.8.3 Write Leveling Mode Exit

The following sequence describes how the Write Leveling Mode should be exited:

1.After the last rising strobe (see ~T111) edge, stop driving the strobe signals (see ~T128). Note: From now on, DQ pins are in undefined driving mode,

and will remain undefined, until tMOD after the respective MR command (see T145).

2.Drive ODT pin low (tIS must be satisfied) and keep it low. (see T128).

3.After the RTT is switched off, disable Write Level Mode via MR command (see T132).

4. After tMOD is satisfied (T145), a any valid command may be registered. (MR commands may already be issued after tMRD (see T136).

CMD

ODT

WLoff

DQS_DQS

T111 T112 T116 T128 T131 T132 T136 T145

RTT_DQS_DQS

ODTLoff

valid

RTT_DQ

DQs result = 1

tWLO + tWLOE

MOD

MRD

MR1

- 87 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.9 Extended Temperature Usage

The following sequence describes how Write Leveling Mode should be exited:

1.After the last rising strobe (see ~T111) edge, stop driving the strobe signals (see ~T128). Note: From now on, DQ pins are in undefined driving mode,

and will remain undefined, until tMOD after the respective MR command (T145).

2.Drive ODT pin low (tIS must be satisfied) and keep it low. (see T128).

3.After the RTT is switched off, disable Write Level Mode via MR command (see T132).

4. After tMOD is satisfied (T145), a any valid command may be registered. (MR commands may already be issued after tMRD (T136).

[ Table 70 ] Mode Register Description

17.9.1 Auto Self-Refresh mode - ASR Mode (optional)

gDDR3 SDRAM provides an Auto Self-Refresh mode (ASR) for application ease. ASR mode is enabled by setting MR2 bit A6=1b and RR2 bit A7=0b.

The DRAM will also manage Self-Refresh entry in either the Normal or Extended (optional) Temperature Ranges. In this mode, the DRAM will also man-

age Self-Refresh power consumption when the DRAM operating temperature changes, lower at low temperatures and higher at high temperatures.

If the ASR option is not supported by the DRAM, MR2 bit A6 must be set to 0b.

If the ASR mode is not enabled (MR2 bit. A6=0b), the SRT bit(MR2 A7) must be manually programmed with the operating temperature range required

during Self-Refresh operation.

Support of the ASR option does not automatically imply support of the Extended Temperature Range and Auto Self-Refresh option availability.

17.9.2 Self-Refresh Temperature Range - SRT

SRT applies to devices supporting Extended Temperature Range only. If ASR = ’0’, the Self-Refresh Temperature (SRT) Range bit must be programmed

to guarantee proper self-refresh operation. If SRT = ’0’, then the DRAM will set an appropriate refresh rate for Self-Refresh operation in the Normal Tem-

perature Range. If SRT = ’1’ then the DRAM will set an appropriate, potentially different, refresh rate to allow Self-Refresh operation in either the Normal

or Extended Temperature Ranges. The value of the SRT bit can effect self-refresh power consumption, please refer to the IDD table for details.

For parts that do not support the Extended Temperature Range, MR2 bit A7 must be set to ’0’ and the DRAM should not be operated outside the Normal

Temperature Range.

Please refer to the component data sheet and/or the DIMM SPD for Extended Temperature Range availability.

[ Table 71 ] Self-Refresh mode summary

Field Bits Description

ASR MR2(A6)

Auto Self-Refresh (ASR) (Optional)

When enabled, gDDR3 SDRAM automatically provides Self-Refresh power management functions for all sup-

ported operating temperature values. If not enabled, the SRT bit must be programmed to indicate TOPER during

subsequent Self-Refresh operation.

0 = Manual SR Reference (SRT)

1 = ASR enable (optional)

SRT MR2(A7)

Self-Refresh Temperature (SRT) Range

If ASR = 0, the SRT bit must be programmed to indicate TOPER during subsequent Self-Refresh operation

If ASR = 1, SRT bit must be set to 0b

0 = Normal operating temperature range

1 = Extended (optional) operating temperature range

MR2 A[6] MR2 A[7] Self-Refresh operation Allowed Operating Temperature Range for

Self-Refresh Mode

0 0 Self-refresh rate appropriate for the Normal Temperature Range Normal (0 - 85 °C)

Self-refresh rate appropriate for either the Normal or Extended Temperature

Ranges. The DRAM must support Extended Temperature Range. The value

of the SRT bit can effect self-refresh power consumption, please refer to the

IDD table for details.

Normal and Extended (0 - 95 °C)

ASR enabled (not supported). Self-Refresh power consumption is tempera-

ture dependent Normal (0 - 85 °C)

ASR enabled (not supported). Self-Refresh power consumption is tempera-

ture dependent Normal and Extended (0 - 95 °C)

1 1 Illegal

Figure 45. MPR Block Diagram

- 88 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.10 Multi Purpose Register

The Multi Purpose Register (MPR) function is used to Read out a predefined system timing calibration bit sequence.

The basic concept of the MPR is shown in Figure 45.

To enable the MPR, a MODE Register Set (MRS) command must be issued to MR3 Register with bit A2 = 1, as shown in Table 72. Prior to issuing the

MRS command, all banks must be in the idle state (all banks precharged and tRP/tRPA met). Once the MPR is enabled, any subsequent RD or RDA

commands will be redirected to the Multi Purpose Register. The resulting operation when a RD or RDA command is issued is defined by MR3 bits A[1:0]

when the MPR is enabled as shown in Table 73. When the MPR is enabled, only RD or RDA commands are allowed until a subsequent MRS command

is issued with the MPR disabled (MR3 bit A2 = 0). Power-Down mode, Self-Refresh, and any other non-RD/RDA command is not allowed during MPR

enable mode. The RESET function is supported during MPR enable mode.

[ Table 72 ] MPR MR3 Register Definition

17.10.1 MPR Functional Description

- One bit wide logical interface via all DQ pins during READ operation.

- Register Read on x4:

DQ[0] drives information from MPR.

DQ[3:0] either drive the same information as DQ[0], or they drive 0b.

- Register Read on x8:

DQ[0] drives information from MPR.

DQ[7:1] either drive the same information as DQ[0], or they drive 0b.

-Register Read on x16:

DQL[0] and DQU[0] drive information from MPR.

DQL[7:1] and DQU[7:1] either drive the same information as DQL[0], or they drive 0b.

-Addressing during for Multi Purpose Register reads for all MPR agents:

BA[2:0]: don’t care

A[1:0]: A[1:0] must be equal to ’00’. Data read burst order in nibble is fixed

A[2]: For BL=8, A[2] must be equal to 0b, burst order is fixed to [0,1,2,3,4,5,6,7], *) For Burst Chop 4 cases, the burst order is switched on nibble base

A[2]=0b, Burst order: 0,1,2,3 *) A[2]=1b, Burst order : 4,5,6,7 *)

A[9:3]: don’t care

A10/AP: don’t care

A12/BC: Selects burst chop mode on-the-fly, if enabled within MR0.

A11, A13,... (if available): don’t care

- Regular interface functionality during register reads:

Support two Burst Ordering which are switched with A2 and A[1:0]=00.

Support of read burst chop (MRS and on-the-fly via A12/BC)

All other address bits (remaining column address bits including A10, all bank address bits) will be ignored by the gDDR3 SDRAM.

Regular read latencies and AC timings apply.

DLL must be locked prior to MPR Reads.

NOTE* : Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selected MPR agent.

MR3 A[2] MR3 A[1:0] Function

MPR MPR-Loc

0b don’t care

(0b or 1b)

Normal operation, no MPR transaction.

All subsequent Reads will come from DRAM array.

All subsequent Write will go to DRAM array.

1b see Table 75 on

page 120 Enable MPR mode, subsequent RD/RDA commands defined by MR3 A[1:0].

Memory Core

MR3 A2:

MPR-off Multi Purpose

Pre-defined data for

DQ,DM,DQS,DQS Pads

MPR R Reads

- 89 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.10.2 MPR Register Address Definition

Table 73 provides an overview of the available data locations, how they are addressed by MR3 A[1:0] during a MRS to MR3, and how their individual bits

are mapped into the burst order bits during a Multi Purpose Register Read.

[ Table 73 ] MPR MR3 Register Definition

NOTE : Burst order bit 0 is assigned to LSB and the burst order bit 7 is assigned to MSB of the selected MPR agent.

17.10.3 Relevant Timing Parameters

The following AC timing parameters are important for operating the Multi Purpose Register: tRP, tMRD, tMOD, and tMPRR. For more details refer to

"Electrical Characteristics & AC Timing for gDDR3-800 to gDDR3-1600" on each component datasheet.

17.10.4 Protocol Example

Protocol Example (This is one example) : Read out predetermined read-calibration pattern.

Description: Multiple reads from Multi Purpose Register, in order to do system level read timing calibration based on predetermined and standardized pat-

tern.

Protocol Steps:

- Precharge All.

- Wait until tRP is satisfied.

- MRS MR3, Opcode "A2 = 1b" and "A[1:0] = 00b"

Redirect all subsequent reads into the Multi Purpose Register, and load Pre-defined pattern into MPR.

- Wait until tMRD and tMOD are satisfied (Multi Purpose Register is then ready to be read). During the period MR3 A2 =1, no data write operation is

allowed.

- Read:

A[1:0] = ’00’b (Data burst order is fixed starting at nibble, always ’00b’ here)

A[2] = ’0’b (For BL=8, burst order is fixed as 0,1,2,3,4,5,6,7)

A12/BC = 1 (use regular burst length of 8)

All other address pins (including BA[2:0] and A10/AP): don’t care

MR3 A[2] MR3 A[1:0] Function Burst Length Read Address

A[2:0] Burst Order and Data Pattern

1b 00b

Read Predefined

Pattern for System

Calibration

BL8 000b Burst order 0,1,2,3,4,5,6,7

Pre-defined Data Pattern [0,1,0,1,0,1,0,1]

BC4 000b Burst order 0,1,2,3

Pre-defined Data Pattern [0,1,0,1]

BC4 100b Burst order 4,5,6,7

Pre-defined Data Pattern [0,1,0,1]

1b 01b RFU

BL8 000b BL8 000b Burst order 0,1,2,3,4,5,6,7

BC4 000b BC4 000b Burst order 0,1,2,3

BC4 100b BC4 100b Burst order 4,5,6,7

1b 10b RFU

BL8 000b BL8 000b Burst order 0,1,2,3,4,5,6,7

BC4 000b BC4 000b Burst order 0,1,2,3

BC4 100b BC4 100b Burst order 4,5,6,7

1b 11b RFU

BL8 000b BL8 000b Burst order 0,1,2,3,4,5,6,7

BC4 000b BC4 000b Burst order 0,1,2,3

BC4 100b BC4 100b Burst order 4,5,6,7

Figure 47. MPR Readout of predefined pattern, BL8 fixed burst order, back-to-back readout

Figure 46. MPR Readout of predefined pattern, BL8 fixed burst order, single readout

- 90 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

Readout of predefined pattern for system read calibration with BL8

(RL=5tCK, Fixed Burst order and Single Readout)

NOTE :

1) RD with BL8 either by MRS or On the fly

2) Memory Controller must drive Low on A[2:0]

Readout of predefined pattern for system read calibration with BL8

(RL=5tCK, Fixed Burst order and Back-to-Back Readout)

NOTE :

1) RD with BL8 either by MRS or On the fly

2) Memory Controller must drive Low on A[2:0]

CMD

tRP

PRE MRS

T5 T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31

RD1) MRS

BA 3 V 3

A[1:0] 0 02) V

A[2] 1 02) 0

A[9:3] 00 V00

A10,AP 0 V 0

A[11] 0 V 0

A12,BC# 0 V 0

A[15:13] 0 V 0

DQS,DQS

DQs

tMOD

tMRD tMRD

tMPRR

RL=5

CMD

tRP

PRE MRS

RD1) MRS

BA 3 V 3

A[1:0] 0 02) V

A[2] 1 02) 0

A[9:3] 00 V00

A10,AP 0 V 0

A[11] 0 V 0

A12,BC# 0 V 0

A[15:13] 0 V 0

DQS,DQS

DQs

tMOD

tMRD

tMPRR

RL=5

RD1)

02)

tCCD

tMRD

RL=5

T5 T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31

Figure 49. MPR Readout of predefined pattern, BC4, upper nibble then lower nibble

Figure 48. MPR Readout predefined pattern, BC4, lower nibble then upper nibble

- 91 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

Readout of predefined pattern for system read calibration with BC4

(RL=5tCK, First Lower Nibble than Upper Nibble)

NOTE :

1) RD with BL4 either by MRS or On the fly

2) Memory Controller must drive Low on A[2:0]

3) A[2]=0 selects lower 4 nibble bits 0...3

4) A[2]=1 selects upper 4 nibble bits 4...7

Readout of predefined pattern for system read calibration with BC4

(RL=5tCK, First Upper Nibble than Lower Nibble)

NOTE :

1) RD with BL4 either by MRS or On the fly

2) Memory Controller must drive Low on A[2:0]

3) A[2]=0 selects lower 4 nibble bits 0...3

4) A[2]=1 selects upper 4 nibble bits 4...7

CMD

tRP

PRE MRS

T5 T17 T21 T22

T23

T24 T25 T26 T27 T28 T29

RD1) MRS

BA 3 V 3

A[1:0] 0 02) V

A[2] 1 03) 0

A[9:3] 00 V00

A10,AP 0 V 0

A[11] 0 V 0

A12,BC# 0 V 0

A[15:13] 0 V 0

DQS,DQS

DQs

tMOD

tMRD

tMPRR

RL=5

RD1)

02)

14)

tCCD

tMRD

RL=5

CMD

tRP

PRE MRS

Tm T7 T21 T22 T23 T24 T25 T26 T27 T28 T29

RD1) MRS

BA 3 V 3

A[1:0] 0 02) V

A[2] 1 14) 0

A[9:3] 00 V00

A10,AP 0 V 0

A[11] 0 V 0

A12,BC# 0 V 0

A[15:13] 0 V 0

DQS,DQS

DQs

tMOD

tMRD

tMPRR

RL=5

RD1)

02)

0 3)

tCCD

tMRD

RL=5

- 92 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.11 ACTIVE Command

The ACTIVE command is used to open (or activate) a row in a particular bank for a subsequent access. The value on the BA0-BA2 inputs selects the

bank, and the address provided on inputs A0-A15 selects the row. This row remains active (or open) for accesses until a precharge command is issued to

that bank. A PRECHARGE command must be issued before opening a different row in the same bank.

17.12 PRECHARGE Command

The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a sub-

sequent row activation a specified time (tRP) after the PRECHARGE command is issued, except in the case of concurrent auto precharge, where a

READ or WRITE command to a different bank is allowed as long as it does not interrupt the data transfer in the current bank and does not violate any

other timing parameters. Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being

issued to that bank. A PRECHARGE command is allowed if there is no open row in that bank (idle state) or if the previously open row is already in the pro-

cess of precharging. However, the precharge period will be determined by the last PRECHARGE command issued to the bank.

17.13 READ Operation

Figure 50. READ Burst Operation RL = 5 (AL = 0, CL = 5, BL8)

Any system or application incorporating random access memory products should be properly designed, tested and qualified to ensure proper use or

access of such memory products. Disproportionate, excessive and/or repeated access to a particular address or addresses may result in reduction of

product life.

17.13.1 READ Burst Operation

During a READ or WRITE command, gDDR3 will support BC4 and BL8 on the fly using address A12 during the READ or WRITE (AUTO PRECHARGE

can be enabled or disabled).

A12 = 0, BC4 (BC4 = burst chop, tCCD = 4)

A12 = 1, BL8

A12 is used only for burst length control, not as a column address.

NOTE :

1. BL8, RL = 5, AL = 0, CL = 5.

2. DOUT n = data-out from column n.

3. NOP commands are shown for ease of illustration; other commands may be valid at these times.

4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ command at T0.

NOTE :

1. BL8, RL = 9, AL = (CL - 1), CL = 5.

2. DOUT n = data-out from column n.

3. NOP commands are shown for ease of illustration; other commands may be valid at these times.

READ

CMD

DQS

Dout

DQ2

T0 T1 T3 T4 T5 T6T2 T7 T8 T9 T10

NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS

tRPRE tRPST

n + 1

Dout

nDout

n + 2 Dout

n + 3 Dout

n + 4 Dout

n + 5 Dout

n + 6 Dout

n + 7

Col n

CL = 5

RL = AL + CL

READ

CMD

DQS

Dout

DQ2

T0 T1 T3 T4 T5 T6T2 T7 T8 T9 T10

NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS

n + 1

Dout

nDout

n + 2

Col n

AL = 4

RL = AL + CL

CL = 5

tRPRE

Figure 51. READ Burst Operation RL = 9 (AL = 4, CL = 5, BL8)

Figure 52. Read Timing Definition

- 93 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ command at T0.

17.13.2 READ Timing Definitions

Read timing is shown in Figure 52 and is applied when the DLL is enabled and locked.

Rising data strobe edge parameters:

- tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK, CK.

- tDQSCK is the actual position of a rising strobe edge relative to CK, CK.

- tQSH describes the DQS, DQS differential output high time.

- tDQSQ describes the latest valid transition of the associated DQ pins.

- tQH describes the earliest invalid transition of the associated DQ pins.

Falling data strobe edge parameters:

- tQSL describes the DQS, DQS differential output low time.

- tDQSQ describes the latest valid transition of the associated DQ pins.

- tQH describes the earliest invalid transition of the associated DQ pins.

- tDQSQ; both rising/falling edges of DQS, no tAC defined.

DQS

Rising Strobe

Region

tDQSCK,MIN

tDQSCK,MAX

Rising Strobe

Region

tDQSCK,MIN

tDQSCK,MAX

tDQSCK

tQSH tQSL

tQSH

tDQSQ tDQSQ

tQSH

Associated

DQ Pins

Figure 53. Clock to Data Strobe Relationship

- 94 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.13.2.1 gDDR3 Clock to Data Strobe relationship

Clock to Data Strobe relationship is shown in Figure 53 and is applied when the DLL is enabled and locked.

Rising data strobe edge parameters:

- tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK, CK.

- tDQSCK is the actual position of a rising strobe edge relative to CK, CK.

- tQSH describes the data strobe high pulse width.

Falling data strobe edge parameters:

- tQSL describes the data strobe low pulse width.

tLZ(DQS), tHZ(DQS) for preamble/postamble (see 17.13.2.3 and Figure 55)

NOTE :

1. Within a burst, rising strobe edge is not necessarily fixed to be always at tDQSCK(min) or tDQSCK(max). Instead, rising strobe edge can vary between tDQSCK(min) and

tDQSCK(max).

2. Notwithstanding note 1, a rising strobe edge with tDQSCK(max) at T(n) can not be immediately followed by a rising strobe edge with tDQSCK(min) at T(n+1). This is because

other timing relationships (tQSH, tQSL) exist:

if tDQSCK(n+1) < 0:

tDQSCK(n) < 1.0 tCK - (tQSHmin + tQSLmin) - |tDQSCK(n+1)|

3. The DQS, DQS differential output high time is defined by tQSH and the DQS, DQS differential output low time is defined by tQSL.

4. Likewise, tLZ(DQS)min and tHZ(DQS)min are not tied to tDQSCKmin (early strobe case) and tLZ(DQS)max and tHZ(DQS)max are not tied to tDQSCKmax (late strobe

case).

5. The minimum pulse width of read preamble is defined by tRPRE(min).

6. The maximum read postamble is bound by tDQSCK(min) plus tQSH(min) on the left side and tHZDSQ(max) on the right side.

7. The minimum pulse width of read postamble is defined by tRPST(min).

8. The maximum read preamble is bound by tLZDQS(min) on the left side and tDQSCK(max) on the right side.

CLK

DQS

CLK

tLZ(DQS)min

tRPRE

DQS

Early Strobe

tDQSCK (min)

tQSH

tDQSCK (min) tDQSCK (min) tDQSCK (min)

tHZ(DQS)min

tRPST

DQS tLZ(DQS)max

tRPRE

DQS

Late Strobe

tDQSCK (max) tDQSCK (max) tDQSCK (max) tDQSCK (max)

tHZ(DQS)max

tRPST

Bit 0 Bit 1 Bit 2 Bit 3 Bit 4 Bit 5 Bit 6 Bit 7

RL measured

to this point

tQSL tQSH tQSL tQSH tQSL

tQSH tQSL tQSH tQSL tQSH tQSL

Figure 55. tLZ and tHZ method for calculating transitions and endpoints

Figure 54. Data Strobe to Data Relationship

- 95 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.13.2.2 gDDR3 Data Strobe to Data relationship

The Data Strobe to Data relationship is shown in Figure 54 and is applied when the DLL is enabled and locked.

Rising data strobe edge parameters:

- tDQSQ describes the latest valid transition of the associated DQ pins.

- tQH describes the earliest invalid transition of the associated DQ pins.

Falling data strobe edge parameters:

- tDQSQ describes the latest valid transition of the associated DQ pins.

- tQH describes the earliest invalid transition of the associated DQ pins.

tDQSQ; both rising/falling edges of DQS, no tAC defined

NOTE :

1. BL = 8, RL = 5 (AL = 0, CL = 5)

2. DOUT n = data-out from column n.

3. NOP commands are shown for ease of illustration; other commands may be valid at these times.

4. BL8 setting activated by either MR0[A1:0 = 00] or MR0[A1:0 = 01] and A12 = 1 during READ command at T0.

5. Output timings are referenced to VDDQ/2, and DLL on for locking.

6. tDQSQ defines the skew between DQS,DQS to Data and does not define DQS, DQS to Clock.

7. Early Data transitions may not always happen at the same DQ. Data transitions of a DQ can vary (either early or late) within a burst.

17.13.2.3 tLZ(DQS), tLZ(DQ), tHZ(DQS), tHZ(DQ) Calculation

tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level which speci-

fies when the device output is no longer driving tHZ(DQS) and tHZ(DQ), or begins driving tLZ(DQS), tLZ(DQ). Figure 55 shows a method to calculate the

point when device is no longer driving tHZ(DQS) and tHZ(DQ), or begins driving tLZ(DQS), tLZ(DQ) by measuring the signal at two different voltages. The

actual voltage measurement points are not critical as long as the calculation is consistent. The parameters tLZ(DQS), tLZ(DQ), tHZ(DQS), and tHZ(DQ)

are defined as singled ended.

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10

READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

Bank

COMMAND

ADDRESS

Dout

n + 1

tDQSQ (max)

tLZ(DQ)min

tDQSQ (max) tRPST

tHZ(DQ)max

tQH

Data Valid

Dout

n + 1

Dout

n + 2

Dout

n + 3

Dout

n + 4

Dout

n + 5

Dout

n + 7

Dout

n + 6

Dout

n + 2

Dout

n + 3

Dout

n + 4

Dout

n + 5

Dout

n + 7

Dout

n + 6

Data Valid

Dout

tRPRE tQH

DQS

DQ (Last data valid)

DQ(First data no longer valid)

All DQs Collectively

Dout

n+1

Dout

n+2

Dout

n+3

Dout

n+4

Dout

n+5

Dout

n+6

Dout

n+7

tQSH tQSL

VOH + x mV

VOH + 2x mV

VOL + 2x mV

VOL + x mV

tLZ

tLZ(DQS),tLZ(DQ)

VTT + 2x mV

VTT + x mV

VTT - x mV

VTT - 2x mV

tLZ(DQS), tLZ(DQ) begin point = 2*T1-T2 tHZ(DQS), tHZ(DQ) end point = 2*T1-T2

tHZ(DQS), tHZ(DQ) with BL8: CK - CK rising crossing at RL + 4 nCK

tHZ(DQS), tHZ(DQ) with BC4: CK - CK rising crossing at RL + 2 nCK

tLZ(DQS): CK - CK rising crossing at RL - 1

tLZ(DQ): CK - CK rising crossing at RL

tHZ

tHZ(DQS),tHZ(DQ)

Figure 57. Method for calculating tRPST transitions and endpoints

Figure 56. Method for calculating tRPRE transitions and endpoints

- 96 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.13.2.4 tRPRE Calculation

Method for calculating differential pulse widths for tRPRE.

17.13.2.5 tRPST Calculation

Method for calculating differential pulse widths for tRPST.

DQS

VTT

DQS

Single ended signal, provided

as background information

Single ended signal,

provided as background information

DQS - DQS

Resulting differential signal,

relevant for tRPRE specification

tAtB

tRPRE

tRPRE_end

VTT

tCtD

tRPRE_begin

DQS

VTT

DQS

VTT

Single ended signal,

provided as background information

Single ended signal,

provided as background information

DQS - DQS

Resulting differential signal,

relevant for tRPST specification

tRPST

tRPST_begin

tRPST_end

TD_TRPST_DEF

Figure 59. READ (BC4) to READ (BC4)

Figure 58. READ (BL8) to READ (BL8)

- 97 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

NOTE :

1. BL8, RL = 5 (CL = 5, AL = 0)

2. Dout n (or b) = data-out from column n (or column b).

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BL8 setting activated by either MR0[A1:0=00] or MR0[A1:0 = 01]and A12 = 1 during READ commands at T0 and T4.

NOTE :

1. BL4, RL = 5 (CL = 5, AL = 0)

2. Dout n (or b) = data-out from column n (or column b).

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BL8 setting activated by either MR0[A1:0=00] or MR0[A1:0 = 01]and A12 = 0 during READ commands at T0 and T4.

READ

CMD

DQS

Dout

DQ2

T0 T3 T5 T6 T8T4 T9 T12 T13 T14

NOP READ NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS

tRPRE

n + 1

Dout

nDout

n + 2 Dout

n + 3 Dout

n + 4 Dout

n + 5 Dout

n + 6 Dout

n + 7

Col n

RL = 5

Bank

Col b

Dout

b + 5

Dout

bDout

b +6 Dout

b + 7

RL = 5

tRPST

READ

CMD

T0 T3 T5 T6 T7 T8T4 T9 T10 T11 T12

NOP READ NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS Col n

Bank

Col b

DQS

Dout

DQ2

tRPRE

n + 1

Dout

nDout

n + 2 Dout

n + 3

RL = 5

tRPST

Dout

tRPRE

b + 1

Dout

bDout

b + 2 Dout

b + 3

tRPST

Figure 60. Nonconsecutive READ (BL8) to READ (BL8)

- 98 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

NOTE :

1. BL8, RL = 5 (CL = 5, AL = 0), tCCD=5

2. Dout n (or b) = data-out from column n (or column b).

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BL8 setting activated by either MR0[A1:0=00] or MR0[A1:0 = 01] and A12 = 1 during READ commands at T0 and T5.

5. DQS-DQS is held logic low at T9.

n+2

NOP

T2 T3 T5 T6 T7 T8T4 T9 T10 T11 T12

NOP NOP READ NOP NOP NOP NOP NOP NOP NOP

Bank

Col n

Bank

Col b

T13 T14

NOP NOP

RL=5

Dout

nDout

n+1 Dout Dout

n+3 Dout

n+4 Dout

n+5 Dout

n+6 Dout

n+7 Dout

bDout

b+2 Dout

b+3

Dout

b+1 Dout

b+4 Dout

b+5 Dout

b+6 Dout

b+7

tRPRE tRPST

tCCD=5

T1T0

READ NOP

COMMAND

ADDRESS

DQS, DQS

Figure 62. READ (BC4) to WRITE (BC4) OTF

Figure 61. READ (BL8) to WRITE (BL8)

- 99 -

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

NOTE :

1. BL8, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)

2. Dout n = data-out from column, DIN b = data-in from column b.

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BL8 setting activated by either MR0[A1:0=00] or MR0[A1:0 = 01]and A12 = 1 during READ commands at T0 and WRITE command at T6.

NOTE :

1. BL4, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)

2. Dout n = data-out from column, DIN b = data-in from column b.

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BL4 setting activated by either MR0[A1:0=00] or MR0[A1:0 = 01]and A12 = 1 during READ commands at T0 and WRITE command at T4.

READ

CMD

DQS

Dout

DQ2

T0 T3 T5 T6 T9T4 T10 T11 T12 T13

NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP

Bank

ADDRESS

tRPRE

n + 1

Dout

nDout

n + 2 Dout

n + 3 Dout

n + 4 Dout

n + 7

Col n

RL = 5

Bank

Col b

WL = 5

tRPST

READ to WRITE Command Delay = RL + tCCD + 2tCK - WL

DIN

bb + 1 b + 3b + 2 b + 4

DIN DIN DIN DIN

tWPRE

tBL = 4 clocks

b + 5

DIN

READ

CMD

T0 T3 T5 T6 T8T4 T9 T10 T11 T12

NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS Col n

Bank

Col b

READ to WRITE Command Delay = RL + tCCD/2 + 2tCK - WL tBL = 4 clocks

DQS

Dout

DQ2

tRPRE

n + 1

Dout

nDout

n + 2 Dout

n + 3

RL = 5 WL = 5

tRPST tWPRE tWPST

DIN

b + 1

DIN

bDIN

b + 2 DIN

b + 3

Figure 64. READ (BC4) to READ (BL8) OTF

Figure 63. READ (BL8) to READ (BC4) OTF

- 100

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

NOTE :

1. RL = 5 (CL = 5, AL = 0)

2. Dout n (or b) = data-out from column n (or column b).

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BL8 setting activated by either MR0[A1:0=00] and A12 = 1 during READ commands at T0.

BC4 setting activated by either MR0[A1:0=01] and A12 = 0 during READ commands at T4.

NOTE :

1. RL = 5 (CL = 5, AL = 0)

2. Dout n (or b) = data-out from column n (or column b).

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BC4 setting activated by either MR0[A1:0=00] and A12 = 1 during READ commands at T0.

BL8 setting activated by either MR0[A1:0=01] and A12 = 0 during READ commands at T4.

READ

CMD

DQS

Dout

DQ2

T0 T3 T5 T6 T8T4 T9 T10 T11 T12

NOP READ NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS

tRPRE

n + 1

Dout

nDout

n + 2 Dout

n + 3 Dout

n + 4 Dout

n + 5 Dout

n + 6 Dout

n + 7

Col n

RL = 5

Bank

Col b

Dout

b + 1

Dout

bDout

b + 2 Dout

b +3

RL = 5

tRPST

tCCD

READ

CMD

T0 T3 T5 T6 T7 T8T4 T9 T10 T11 T12

NOP READ NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS Col n

Bank

Col b

DQS

Dout

DQ2

tRPRE

n + 1

Dout

nDout

n + 2 Dout

n + 3

RL = 5

tRPST

Dout

tRPRE

b + 1

Dout

bDout

b + 2 Dout

b + 3 Dout

b + 4 Dout

b + 5 Dout

b + 6

tCCD

Figure 66. READ (BL8) to WRITE (BC4) OTF

Figure 65. READ (BC4) to WRITE (BL8) OTF

- 101

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

NOTE :

1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL -1, AL = 0)

2. Dout n = data-out from column, DIN b = data-in from column b.

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BC4 setting activated by either MR0[A1:0=00] and A12 = 0 during READ commands at T0.

BL8 setting activated by either MR0[A1:0=01] and A12 = 1 during WRITE commands at T4.

NOTE :

1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)

2. Dout n = data-out from column, DIN b = data-in from column b.

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BL8 setting activated by either MR0[A1:0=00] and A12 = 1 during READ commands at T0.

BC4 setting activated by either MR0[A1:0=01] and A12 = 0 during WRITE commands at T6.

READ

CMD

DQS

Dout

DQ2

T0 T3 T5 T6 T8T4 T9 T10 T12 T13

NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP

ADDRESS

tRPRE

n + 1

Dout

nDout

n + 2 Dout

n + 3

RL = 5

WL = 5

tRPST

READ to WRITE Command Delay = RL + tCCD/2 + 2tCK - WL

DIN

bb + 1 b + 3b + 2 b + 6 b + 7

DIN DIN DIN DIN DIN

tWPRE

tBL = 4 clocks

Bank

Col n

Bank

Col b

tWPST

READ

CMD

DQS

Dout

DQ2

T0 T4 T6 T7 T9T5 T10 T11 T12 T13

NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP

ADDRESS

tRPRE

n + 1

Dout

nDout

n + 2 Dout

n + 3

RL = 5 WL = 5

tRPST

READ to WRITE Command Delay = RL + tCCD + 2tCK - WL

DIN

bb + 1 b + 3b + 2

DIN DIN DIN

tWPRE

tBL = 4 clocks

Bank

Col n

Bank

Col b

tWPST

Dout

n + 4 Dout

n + 5 Dout

n + 6 Dout

n + 7

Figure 68. READ to RRECHARGE, RL=8, AL=CL-2, CL=5, tRTP=6, tRP=5

Figure 67. READ to PRECHARGE, RL=5, AL=0, CL=5, tRTP=4, tRP=5

- 102

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.13.3 Burst Read Operation followed by a Precharge

The minimum external Read command to Precharge command spacing to the same bank is equal to AL + tRTP with tRTP being the Internal Read Com-

mand to Precharge Command Delay. Note that the minimum ACT to PRE timing, tRAS, must be satisfied as well. The minimum value for the Internal

Read Command to Precharge Command Delay is given by tRTP.MIN = max(4 x nCK, 7.5 ns). A new bank active command may be issued to the same

bank if the following two conditions are satisfied simultaneously:

1. The minimum RAS precharge time (tRP.MIN) has been satisfied from the clock at which the precharge begins.

2. The minimum RAS cycle time (tRC.MIN) from the previous bank activation has been satisfied.

Examples of Read commands followed by Precharge are show in Figure 67 and Figure 68.

NOTE :

1. RL = 5 (CL = 5, AL = 0)

2. DOUT n = data-out from column n.

3. NOP commands are shown for ease of illustration; other commands may be valid at these times.

4. The example assumes tRAS.MIN is satisfied at Precharge command time (T5) and that tRC.MIN is satisfied at the next Active command time (T10).

NOTE :

1. RL = 8 (CL = 5, AL = CL - 2)

2. DOUT n = data-out from column n.

3. NOP commands are shown for ease of illustration; other commands may be valid at these times.

4. The example assumes tRAS.MIN is satisfied at Precharge command time (T10) and that tRC.MIN is satisfied at the next Active command time (T15)

NOP

CMD

DQS

T0 T1 T5 T6 T7 T8 T9 T10 T11 T12

READ NOP PRE NOP NOP NOP NOP ACT NOP NOP

Ban a,

Col n

DIN

nDIN

n + 1 DIN

n + 2 DIN

n + 3 DIN

n + 4 DIN

n + 5 DIN

n + 6 DIN

n + 7

Bank a,

(or all)

Bank a,

Row b

Address

tRTP tRP

RL = AL + CL

DQ DIN

nDIN

n + 1 DIN

n + 2 DIN

n + 3

DQS

BL4 Operation :

BL8 Operation :

NOP

CMD

DQS

T0 T1 T4 T8 T9 T10 T11 T12 T13

READ NOP NOP PRE NOP NOP NOP ACT

Ban a,

Col n

DIN

nDIN

n + 1 DIN

n + 2 DIN

n + 3 DIN

n + 4 DIN

n + 5 DIN

n + 6 DIN

n + 7

Bank a,

Row b

Address

tRTP

CL = 5

DQ DIN

nDIN

n + 1 DIN

n + 2 DIN

n + 3

DQS

BL4 Operation :

BL8 Operation :

AL = CL-2 = 3

Bank a,

(or all)

tRTP

T15

NOP NOP

- 103

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.14 WRITE Operation

17.14.1 gDDR3 Burst Operation

During a READ or WRITE command, gDDR3 will support BC4 and BL8 on the fly using address A12 during the READ or WRITE (AUTO PRECHARGE

can be enabled or disabled).

A12 = 0, BC4 (BC4 = burst chop, tCCD = 4)

A12 = 1, BL8

A12 is used only for burst length control, not as a column address.

17.14.2 WRITE Timing Violations

17.14.2.1 Motivation

Generally, if timing parameters are violated, a complete reset/initialization procedure has to be initiated to make sure the DRAM works properly.

However, it is desirable for certain minor violations that the DRAM is guaranteed not to "hang up" and errors be limited to that particular operation. (for ref-

erence: add more motivation here later, or refer to the "Read Synchronization" section if available) For the following, it will be assumed that there are no

timing violations w.r.t. to the Write command itself (including ODT, etc.) and that it does satisfy all timing requirements not mentioned below.

17.14.2.2 Data Setup and Hold Violations

Should the data to strobe timing requirements (tDS, tDH) be violated, for any of the strobe edges associated with a write burst, then wrong data might be

written to the memory location addressed with this WRITE command. In the example (Figure 69 on page 104), the relevant strobe edges for write burst A

are associated with the clock edges: T5, T5.5, T6, T6.5, T7, T7.5, T8, T8.5.Subsequent reads from that location might result in unpredictable read data,

however the DRAM will work properly otherwise.

17.14.2.3 Strobe to Strobe and Strobe to Clock Violations

Should the strobe timing requirements (tDQSH, tDQSL, tWPRE, tWPST) or the strobe to clock timing requirements (tDSS, tDSH, tDQSS) be violated, for

any of the strobe edges associated with a Write burst, then wrong data might be written to the memory location addressed with the offending WRITE com-

mand. Subsequent reads from that location might result in unpredictable read data, however the DRAM will work properly otherwise.

In the example (Figure 69 on page 104) the relevant strobe edges for Write burst A are associated with the clock edges: T4, T4.5, T5, T5.5, T6, T6.5, T7,

T7.5, T8, T8.5 and T9. Any timing requirements starting or ending on one of these strobe edges need to be fulfilled for a valid burst.

For Write burst B the relevant edges are T8, T8.5, T9, T9.5, T10, T10.5, T11, T11.5, T12, T12.5 and T13. Some edges are associated with both bursts.

17.14.2.4 Write Timing Parameters

This drawing is for example only to enumerate the strobe edges that "belong" to a Write burst. No actual timing violations are shown here. For a valid

burst all timing parameters for each edge of a burst need to be satisfied (not only for one edge - as shown).

Figure 69. gDDR3 Write Timing Definition & Parameters

- 104

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

NOTE :

1. BL8, WL = 5 ( AL = 0, CWL = 5)

2. DIN n = data-in from column n

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BL8 setting activated by MR0[A1:0=10] or MR0[A1:0 = 01] and A12 = 1 during WRITE commands at T0.

5. tDQSS must be met at each rising clock edge.

17.14.3 Write Data Mask

One write data mask (DM) pin for each 8 data bits (DQ) will be supported on gDDR3 SDRAMs, consistent with the implementation on DDR2 SDRAMs. It

has identical timings on write operations as the data bits as shown in Figure 69, and though used in a unidirectional manner, is internally loaded identically

to data bits to ensure matched system timing. DM is not used during read cycles for any bit organizations including x4, x8, and x16, however, DM of x8 bit

organization can be used as TDQS during write cycles if enabled by the MR1[A11] setting. See Figure 16.4.3.7 for more details on TDQS vs. DM opera-

tions.

WRITE

CMD

DQS

DQ2

T0 T1 T3 T4 T5 T6T2 T7 T8 T9 Tn

NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS

tWRITE(min)

tDQSS

Col n

WL = AL + CWL

tDSH tDSH tDSH tDSH

tDQSH(min)

tDQSL

tDSS

tDQSH tDQSL tDQSH

tDSS

tDQSL tDQSH tDQSL tDQSH

tDSS tDSS

tWPST(min)

tDQSL(min)

tDSS

DIN

nDIN

n + 2 DIN

n + 3 DIN

n + 4 DIN

n + 6 DIN

n + 7

tDQSS(min)

tWRITE(min)

tDSH

tDQSH(min)

tDQSL

tDSS

tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH

tWPST(min)

DIN

nDIN

n + 2 DIN

n + 3 DIN

n + 4 DIN

n + 6 DIN

n + 7

DQS

DQ2

tDQSS(min)

DQS

DQ2

tDQSS(min)

tDSH tDSH tDSH

tDSS tDSS tDSS tDSS

tDQSL(min)

tWRITE(min)

tDSH

tDQSH(min)

tDQSL

tDSS

tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH

DIN

nDIN

n + 2 DIN

n + 3 DIN

n + 4 DIN

n + 6 DIN

n + 7

tDQSL(min)

tDSS tDSS tDSS tDSS

tWPST(min)

tDSH tDSH tDSH

tDQSS

Figure 70. Method for calculating tWPRE transitions and endpoints

Figure 71. Method for calculating tWPST transitions and endpoints

- 105

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.14.4 tWPRE Calculation

Method for calculating differential pulse widths for tWPRE is shown in Figure

17.14.5 tWPST Calculation

Method for calculating differential pulse widths for tWPST is shown in Figure

VTT

Resuiting differential signal rele-

veant for tWPRE specification t2

tWPRE_end

tWPRE_begin

DQS - DQS 0V

VTT

Resuiting differential signal rele-

veant for tWPST specification t2

tWPRE_end

tWPST

DQS - DQS 0V

tWPST_begin

Figure 73. WRITE Burst Operation WL=9 (AL=CL-1, CWL=5, BL8)

Figure 72. WRITE Burst Operation WL=5 (AL=0, CWL=5, BL8)

- 106

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

NOTE :

1. BL8, WL = 5, AL = 0, CWL = 5

2. DIN n = data-in from column n.

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BL8 setting activated by either MR0[A1:0=00] or MR0[A1:0=01] and A12 = 1 during WRITE commands at T0.

NOTE :

1. BL8, WL = 9, AL = (CL - 1), CL = 5, CWL = 5

2. DIN n = data-in from column n.

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BL8 setting activated by either MR0[A1:0=00] or MR0[A1:0=01] and A12 = 1 during WRITE commands at T0.

WRITE

CMD

DQS

DQ2

T0 T1 T3 T4 T5 T6T2 T7 T8 T9 T10

NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS

tWPRE tWPST

Col n

WL = AL + CWL

DIN

nDIN

n + 1 DIN

n + 2 DIN

n + 3 DIN

n + 4 DIN

n + 5 DIN

n + 6 DIN

n + 7

WRITE

CMD

DQS

DQ2

T0 T1 T3 T4 T5 T6T2 T7 T8 T9 T10

NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS

tWPRE

Col n

AL = 4

WL = AL + CWL

CWL = 5

DIN

n + 1

DIN

nDIN

n + 2 DIN

n + 3

Figure 76. WRITE (BC4) OTF to PRECHARGE Operation

Figure 75. WRITE (BC4) to PRECHARGE Operation

Figure 74. WRITE (BC4) to READ (BC4) Operation

- 107

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

NOTE :

1. BC4, WL = 5, RL = 0

2. DIN n = data-in from column n ; Dout b = data-out from column b.

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BC4 setting activated by MR0[A1:0=10] during WRITE commands at T0 and READ command at Tn.

5. tWTR controls the write to read delay to the same device and starts with the first rising clock edge after the last write data shown at T7.

NOTE :

1. BC4, WL = 5, RL = 5.

2. DIN n = data-in from column n; DOUT b = data-out from column b.

3. NOP commands are shown for ease of illustration; other commands may be valid at these times.

4. BC4 setting activated by MR0[A1:0 = 10] during WRITE command at T0.

5. The write recovery time (tWR) referenced from the first rising clock edge after the last write data shown at T7.

tWR specifies the last burst write cycle until the precharge command can be issued to the same bank.

NOTE :

1. BC4 OTF, WL = 5 (CWL = 5, AL = 0)

2. DIN n (or b) = data-in from column n.

3. NOP commands are shown for ease of illustration; other commands may be valid at these times.

4. BC4 OTF setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T0.

5. The write recovery time (tWR) starts at the rising clock edge T9 (4 clocks from T5).

WRITE

CMD

DQS

DQ2

T0 T1 T3 T4 T5 T6T2 T7 T8 T9 Tn

NOP NOP NOP NOP NOP NOP NOP NOP NOP READ

Bank

ADDRESS

tWRITE tWPST

Col n

WL = 5

tWTR5

Bank

Col b

RL = 5

DIN

n + 1

DIN

nDIN

n + 2 DIN

n + 3

WRITE

CMD

DQS

DQ2

T0 T1 T3 T4 T5 T6T2 T7 T8 T9 Tn

NOP NOP NOP NOP NOP NOP NOP NOP NOP PRE

Bank

ADDRESS

tWRITE tWPST

Col n

WL = 5

tWR5

DIN

n + 1

DIN

nDIN

n + 2 DIN

n + 3

WRITE

CMD

DQS

DQ2

T0 T1 T5 T6 T7 T9T4 T11 Ta0 Ta1 T14

NOP NOP NOP NOP NOP NOP NOP PRE NOP NOP

Bank

ADDRESS

tWRITE tWPST

Col n

WL = 5

tWR5

DIN

n + 1

DIN

nDIN

n + 2 DIN

n + 3

4 clocks

VALID

Figure 78. WRITE (BC4) to WRITE (BC4) OTF

Figure 77. WRITE (BL8) to WRITE (BL8)

- 108

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

NOTE :

1. BL8, WL = 5(CWL = 5, AL = 0)

2. DIN n (or b) = data-in from column n (or column b.)

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BL8 setting activated by either MR0[A1:0=00] or MR0[A1:0=01] and A12 = 1 during WRITE commands at T0 and T4

5. The write recovery time(tWR) and write timing parpmeter (tWTR) are referenced from the first rising clock edge after the last write data shown at T13.

NOTE :

1. BC4, WL = 5(CWL = 5, AL = 0)

2. DIN n (or b) = data-in from column n (or column b.)

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BC4 setting activated by MR0[A1:0=01] and A12 = 0 during WRITE commands at T0 and T4

5. BC4 setting activated by MR0[A1:0=01] and A12 = 0 during WRITE commands at T0 and T4

WRITE

CMD

DQS

DIN

DQ2

T0 T1 T5 T9 T10 T11 T12 T13 T14

NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS

tWPRE tWPST

n + 1

DIN

nDIN

n + 2 DIN

n + 7 DIN

bDIN

b + 1 DIN

b + 2 DIN

b + 3

Col n

WL = 5

tCCD

Bank

Col b

DIN

b + 4 DIN

b + 5 DIN

b + 6

WL = 5

tBL = 4 clocks

tWR

tWTR

DIN

b + 7

WRITE

CMD

DQS

DIN

DQ2

T0 T1 T5 T7 T8 T9 T10 T11 T12

NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS

tWPRE tWPST

n + 1

DIN

nDIN

n + 2 DIN

n + 7

Col n

WL = 5

tCCD

WL = 5

tBL = 4 clocks

Bank

Col b

DIN

bDIN

b + 1 DIN

b + 2 DIN

b + 3

tWPREtWPST

Figure 81. WRITE (BC4) to READ (BC4)

Figure 80. WRITE (BC4) to READ (BC4/BL8) OTF

Figure 79. WRITE (BL8) to READ (BC4/BL8)OTF

- 109

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

NOTE :

1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL =0)

2. DIN n = data-in from column n Dout = data-in from column b.

3. NOP commands are shown for ease of illustration ; other commands may be valid at these times.

4. BL8 setting activated by either MR0[A1:0=00] or MR0[A1:0=01] and A12 = 1 during WRITE commands at T0.

READ command at T11 can be either BC4 or BL8 depending on MR0[A1 : 0] and A12 status at T13.

NOTE :

1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL =5, AL = 0)

2. DIN n = data-in from column n; DOUT b = data-out from column b.

3. NOP commands are shown for ease of illustration; other commands may be valid at these times.

4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T0.

READ command at T11 can be either BC4 or BL8 depending on A12 status at T13.

NOTE :

1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL =5, AL = 0)

2. DIN n = data-in from column n; DOUT b = data-out from column b.

3. NOP commands are shown for ease of illustration; other commands may be valid at these times.

4. BC4 setting activated by MR0[A1:0 = 10].

WRITE

CMD

DQS

DIN

DQ2

T0 T1 T5 T9 T10 T11 T12 T13 T14

NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS

tWPRE tWPST

n + 1

DIN

nDIN

n + 2 DIN

n + 7

Col n

WL = 5

Bank

Col b

tWTR

RL =5

WRITE

CMD

DQS

DIN

DQ2

T0 T1 T5 T7 T10 T11 T12 T13

NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS

tWPRE

n + 1

DIN

nDIN

n + 2 DIN

n + 3

Col n

WL = 5

tWTR

Bank

Col b

tWPST

tBL = 4 clocks

RL =5

WRITE

CMD

DQS

DQ2

T0 T1 T5 T6 T7 T8T4 T10 T11 T12 T14

NOP NOP NOP NOP NOP NOP NOP PRE NOP NOP

Bank

ADDRESS

tWRITE tWPST

Col n

WL = 5

tWTR

DIN

n + 1

DIN

nDIN

n + 2 DIN

n + 3

Bank

Col b

RL = 5

Figure 83. WRITE (BC4) to WRITE (BL8) OTF

Figure 82. WRITE (BL8) to WRITE (BC4) OTF

- 110

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

NOTE :

1. WL = 5 (CWL = 5, AL = 0)

2. DIN n (or b) = data-in from column n (or column b).

3. NOP commands are shown for ease of illustration; other commands may be valid at these times.

4. BL8 setting activated by MR0[A1:0 = 01] and A12 = 1 during WRITE command at T0.

BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T4.

NOTE :

1. WL = 5 (CWL = 5, AL = 0)

2. DIN n (or b) = data-in from column n (or column b).

3. NOP commands are shown for ease of illustration; other commands may be valid at these times.

4. BC4 setting activated by MR0[A1:0 = 01] and A12 = 0 during WRITE command at T0.

BL8 setting activated by MR0[A1:0 = 01] and A12 = 1 during WRITE command at T4.

WRITE

CMD

DQS

DIN

DQ2

T0 T1 T5 T9 T10 T11 T12 T13 T14

NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS

tWPRE tWPST

n + 1

DIN

nDIN

n + 2 DIN

n + 7 DIN

bDIN

b + 1 DIN

b + 2 DIN

b + 3

Col n

WL = 5

tCCD

WL = 5

tBL = 4 clocks

tWR

tWTR

Bank

Col b

WRITE

CMD

DQS

DIN

DQ2

T0 T1 T5 T7 T8 T9 T13 T14

NOP WRITE NOP NOP NOP NOP NOP NOP NOP

Bank

ADDRESS

tWPRE tWPST

n + 1

DIN

nDIN

n + 2 DIN

n + 3

Col n

WL = 5

tCCD

WL = 5

tBL = 4 clocks

Bank

Col b

DIN

bDIN

b + 1 DIN

b + 7

tWPREtWPST

tWR

tWTR

NOP

DIN

b + 2

Figure 86. Pulling-in Refresh-Commands (Example)

Figure 85. Postponing Refresh - Commands (Example)

Figure 84. Refresh Command Timing

- 111

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.15 Refresh Command

The Refresh command (REF) is used during normal operation of the gDDR3 SDRAMs. This command is non persistent, so it must be issued each time a

refresh is required. The gDDR3 SDRAM requires Refresh cycles at an average periodic interval of tREFI. When CS, RAS and CAS are held Low and WE

High at the rising edge of the clock, the chip enters a Refresh cycle. All banks of the SDRAM must be precharged and idle for a minimum of the precharge

time tRP(min) before the Refresh Command can be applied.

The refresh addressing is generated by the internal refresh controller. This makes the address bits "Don’t Care" during a Refresh command. An internal

address counter supplies the addresses during the refresh cycle. No control of the external address bus is required once this cycle has started.

When the refresh cycle has completed, all banks of the SDRAM will be in the precharged (idle) state. A delay between the Refresh Command and the

next valid command, except NOP or DES, must be greater than or equal to the minimum Refresh cycle time tRFC(min). Note that the tRFC timing param-

eter depends on memory density.

In general, a Refresh command needs to be issued to the gDDR3 SDRAM regularly every tREFI interval. To allow for improved efficiency in scheduling

and switching between tasks, some flexibility in the absolute refresh interval is provided. A maximum of 8 Refresh commands can be postponed during

operation of the gDDR3 SDRAM, meaning that at no point in time more than a total of 8 Refresh commands are allowed to be postponed. In case that 8

Refresh commands are postponed in a row, the resulting maximum interval between the surrounding Refresh commands is limited to 9 x tREFI (see

Figure 85). A maximum of 8 additional Refresh commands can be issued in advance ("pulled in"), with each one reducing the number of regular Refresh

commands required later by one. Note that pulling in more than 8 Refresh commands in advance does not further reduce the number of regular Refresh

commands required later, so that the resulting maximum interval between two surrounding Refresh commands is limited to 9 x tREFI(see Figure 86). At

any given time, a maximum of 16 REF commands can be issued within 2 x tREFI. Self-refresh Mode may be entered with a maximum of eight Refresh

commands being postponed. After exiting Self-Refresh Mode with one or more Refresh commands postponed, additional Refresh commands may be

postponed to the extent that the total number of postponed Refresh commands (before and after the Self-Refresh) will never exceed eight.

NOTE :

1. Only NOP/DES commands allowed after Refresh command registered until tRFC.Min expires.

2. Time interval between two Refresh commands may be extended to a maximum of 9 x tREFI

T0 T1 Ta0 Ta1 Tb0 Tb1 Tb2 Tb3

CMD

REF NOP NOP

tRFC

Tc0 Tc1 Tc 2

REF NOP NOP VALID VALID VALID VALID REF VALID VALID VALID

tRFC,MIN

tREFI (max. 9 x tREFI)

DRAM Must be idle DRAM Must be idle

Tc3

VALID

DRAM must be ide TIME BREAK DON’T CARE

DRAM must be ide

a) Postponing Refresh Commands (Example)

9 x tREFI

REFI

8 REF-Commands postponed

tRFC

b) Pulling-in Refresh Commands (Example)

9 x tREFI

REFI

8 REF-Commands pulled-in

Figure 87. Self-Refresh Entry/Exit Timing

- 112

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.16 Self-Refresh Operation

The Self-Refresh command can be used to retain data in the gDDR3 SDRAM, even if the rest of the system is powered down. When in the Self-Refresh

mode, the gDDR3 SDRAM retains data without external clocking. The gDDR3 SDRAM device has a built-in timer to accommodate Self-Refresh opera-

tion. The Self-Refresh-Entry (SRE) Command is defined by having CS, RAS, CAS, and CKE held low with WE high at the rising edge of the clock.

Before issuing the Self-Refresh-Entry command, the gDDR3 SDRAM must be idle with all bank precharge state with tRP satisfied. Also, on-die termina-

tion must be turned off before issuing Self-Refresh-Entry command, by either registering ODT pin low "ODTL + 0.5tCK" prior to the Self-Refresh Entry

command or using MRS to MR1 command. Once the Self-Refresh Entry command is registered, CKE must be held low to keep the device in Self-Refresh

mode. During normal operation (DLL on), MR1(A0 = 0), the DLL is automatically disabled upon entering Self-Refresh and is automatically enabled

(including a DLL-Reset) upon exiting Self-Refresh.

When the gDDR3 SDRAM has entered Self-Refresh mode, all of the external control signals, except CKE and RESET, are "don’t care". For proper Self-

Refresh operation, all power supply and reference pins (VDD, VDDQ, VSS, VSSQ, VRefCA and VRefDQ) must be at valid levels. VrefDQ supply man be

turned OFF in system during Self Refresh operation, provided that VrefDQ is valid and stable prior to CKE going back High and that first Write operation

may not occur earlier than 512nCK after exit from Self Refresh.

The DRAM initiates a minimum of one Refresh command internally within tCKE period once it enters Self-Refresh mode.

The clock is internally disabled during Self-Refresh Operation to save power. The minimum time that the gDDR3 SDRAM must remain in Self-Refresh

mode is tCKE. The user may change the external clock frequency or halt the external clock tCKSRE after Self-Refresh entry is registered, however, the

clock must be restarted and stable tCKSRX before the device can exit Self-Refresh operation.

The procedure for exiting Self-Refresh requires a sequence of events. First, the clock must be stable prior to CKE going back HIGH. Once a Self-Refresh

Exit command (SRX, combination of CKE going high and either NOP or Deselect on command bus) is registered, a delay of at least tXS must be satisfied

before a valid command not requiring a locked DLL can be issued to the device to allow for any internal refresh in progress. Before a command which

requires a locked DLL can be applied, a delay of at least tXSDLL and applicable ZQCAL function requirements (TBD) must be satisfied.

Before a command that requires a locked DLL can be applied, a delay of at least tXSDLL must be satisfied. Depending on the system environment and

the amount of time spent in Self-Refresh, ZQ calibration commands may be required to compensate for the voltage and temperature drift as described in

"ZQ Calibration Commands" on page 119. To issue ZQ calibration commands, applicable timing requirements must be satisfied (See Figure 101, "ZQ Cal-

ibration Timing", on page 119)

CKE must remain HIGH for the entire Self-Refresh exit period tXSDLL for proper operation except for Self-Refresh re-entry. Upon exit from Self-Refresh,

the gDDR3 SDRAM can be put back into Self-Refresh mode after waiting at least tXS period and issuing one refresh command (refresh period of tRFC).

NOP or deselect commands must be registered on each positive clock edge during the Self-Refresh exit interval tXS. ODT must be turned off during tXS-

DLL.

The use of Self-Refresh mode introduces the possibility that an internally timed refresh event can be missed when CKE is raised for exit from Self-

Refresh mode. Upon exit from Self-Refresh, the gDDR3 SDRAM requires a minimum of one extra refresh command before it is put back into Self-Refresh

Mode.

NOTE :

1. Only NOP or DES commands

2. Valid commands not requiring a locked DLL

3. Valid commands requiring a locked DLL

T0 T1 Tc1Tc0T2 Ta0 Tb0 Td0 Te0 Tf0

tIS tCPDED tCKSRE tCKSRX

tCKESR

ODTL

NOP SRE NOP SRX NOP(1) VALID(2) VALID(3)

VALID

VALIDVALID

CKE

ODT

COMMAND

ADDR

tRP

Enter Self Refresh Exit Self Refresh

tXS

tXSDLL

tIS

DON’T CARE TIME BREAK

VALID

- 113

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.17 Power-Down Modes

Figure 88. Active Power-Down Entry and Exit Timing Diagram

17.17.1 Power-Down Entry and Exit

Power-down is synchronously entered when CKE is registered low (along with NOP or Deselect command). CKE is not allowed to go low while mode reg-

ister set command, MPR operations, ZQCAL operations, DLL locking or read / write operation are in progress. CKE is allowed to go low while any of other

operations such as row activation, precharge or auto-precharge and refresh are in progress, but power-down IDD spec will not be applied until finishing

those operations. Timing diagrams are shown in Figure 88 through Figure 100 with details for entry and exit of Power-Down.

The DLL should be in a locked state when power-down is entered for fastest power-down exit timing. If the DLL is not locked during power-down entry, the

DLL must be reset after exiting power-down mode for proper read operation and synchronous ODT operation. DRAM design provides all AC and DC tim-

ing and voltage specification as well proper DLL operation with any CKE intensive operations as long as DRAM controller complies with DRAM specifica-

tions.

During Power-Down, if all banks are closed after any in progress commands are completed, the device will be in precharge Power-Down mode; if any

bank is open after in progress commands are completed, the device will be in active Power-Down mode.

Entering power-down deactivates the input and output buffers, excluding CK, CK, ODT, CKE and RESET. To protect DRAM internal delay on CKE line to

block the input signals, multiple NOP or Deselect commands are needed during the CKE switch off and cycle(s) after, this timing period are defined as

tCPDED. CKE_low will result in deactivation of command and address receivers after tCPDED has expired.

[ Table 74 ] Power-Down Entry Definitions

Also, the DLL is disabled upon entering precharge power-down (Slow Exit Mode), but the DLL is kept enabled during precharge power-down (Fast Exit

Mode) or active power-down. In power-down mode, CKE low, RESET high and a stable clock signal must be maintained at the inputs of the gDDR3

SDRAM, and ODT should be in a valid state but all other input signals are "Don’t Care" (If RESET goes low during Power-Down, the DRAM will be out of

PD mode and into reset state.) CKE low must be maintained until tCKE has been satisfied. Power-down duration is limited by 9 times tREFI of the device.

The power-down state is synchronously exited when CKE is registered high (along with a NOP or Deselect command).

CKE high must be maintained until tCKE has been satisfied. A valid, executable command can be applied with power-down exit latency, tXP and/or tXP-

DLL after CKE goes high. Power-down exit latency is defined at AC spec table of component data sheet.

Active Power Down Entry and Exit timing diagram example is shown in Figure 88. Timing Diagrams for CKE with PD Entry, PD Exit with Read and Read

with Auto Precharge, Write, Write with Auto Precharge, Activate, Precharge, Refresh, and MRS are shown in Figure 89 through Figure 97. Additional clar-

ifications are shown in Figure 98 through Figure 100.

NOTE : VAL command at T0 is ACT, NOP, DES or Precharge with still one bank remaining open after completion of precharge command.

Status of DRAM MRS bit A12 DLL PD Exit Relevant Parameters

Active (A bank or more Open) Don’t Care On Fast tXP to any valid command

Pre Charged (All banks Precharged) 0Off Slow

tXP to any valid command. Since it is in precharge state, com-

mands here will be ACT, AR, MRS/EMRS, PR or PRA

tXPDLL to commands who need DLL to operate, such as RD, RDA

or ODT control line.

Pre Charged (All Banks Precharged) 1On FasttXP to any valid command

T0 T1 Tn Tn + 1 Tx Ty

CMD

tCPDED

tIH

CKE

tIS

tIH

tIS

tPD

VAL NOP NOP NOP NOP NOP NOP NOP VALD NOP NOP

tCKEmin

NOP

tXP

Figure 91. Power-Down Entry after Write

Figure 90. Power-Down Entry After Write with Auto Precharge

Figure 89. Power-Down Entry after Read and Read with Auto Precharge

- 114

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 Tn

CMD RD/RDA NOP NOP

BA Valid

CKE

DQ_BL8 Q0

tCPDEDtRDPDEN

tIS

tCKE

Q1 Q2 Q3 Q4 Q5 Q6 Q7

DQ_BL4 Q0 Q1 Q2 Q3

T0 T1 T4 T5 T6 T7 T8 T9 T10 T14 T15 T16 T17 T18

CMD WRA NOP

BA Valid

CKE

DQ_BL4

tCPDED

tWRAPDEN

tIS

tCKE

DQ_BL8

WRWL=5

D0 D1 D2 D3 D4 D5 D6 D7

D0 D1 D2 D3

WR is programmed though MRS

Start Internal Precharge

NOP NOP

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13

CMD WR

BA Valid

CKE

DQ_BL8

tCPDED

tWRPDEN

tIS

tCKE

DQ_BL4

T14

tWRWL=5

D0 D1 D2 D3 D4 D5 D6 D7

D0 D1 D2 D3

NOP NOP

Figure 95. Active Command to Power-Down Entry

Figure 94. Refresh Command to Power-Down Entry

Figure 93. Precharge Power-Down (Slow Exit Mode) Entry and Exit

Figure 92. Precharge Power-Down (Fast Exit Mode) Entry and Exit

- 115

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

T0 T1 Tn Tn+1

CKE

tCPDED

Tx Ty

tIH

tIS

tIH

tIS

tCKEmin tCKEmin

CMD VALID NOPNOP NOP NOP NOPNOP NOPNOPNOPNOP

tXP

T0 T1 Tn Tn+1

CKE

tCPDED

Tx Ty

tIH

tIS

tIH

tIS

tCKEmin tCKEmin

CMD NOP NOPNOP NOP NOP VALIDNOP NOPNOPNOPNOP

tXP

NOP

tXPDLL

CKE

tCPDED

tIS

tREFPDEN

CMD NOPREF NOP

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14

CKE

tCPDED

tIS

CMD NOPACT NOP

T0 T1 T2 T3 T4 Tn+1 Tn+2 End

tCKE

tACTPDEN

Figure 97. MRS Command to Power-Down Entry

Figure 96. Precharge/Precharge all Command to Power-Down Entry

- 116

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

CKE

tCPDED

tIS

CMD NOPPR or PRA NOP

T0 T1 T2 T3 T4 Tn+1 Tn+2 End

tCKE

tACTPDEN

CKE

tCPDED

tIS

tMRSPDEN

CMD NOPMRS NOP

T0 T1 T2 T3 Tn Tn+1 Tn+2 Tn+3 Tn+4 Tn+5 Tn+6 Tn+7

NOPNOP NOP

Figure 98. Power-Down Entry/Exit Clarifications - Case1

Figure 99. Power-Down Entry/Exit Clarifications - Case2

- 117

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.17.2 Power-Down clarifications - Case 1

When CKE is registered low for power-down entry, tPD(min) must be satisfied before CKE can be registered high for power-down exit. The minimum

value of parameter tPD(min) is equal to the minimum value

CASE 1 :

When CKE registered low for PD Entry, tCKE must be satisfied before CKE can be registered high as PD Exit

CASE 1a :

After PD Exit, tCKE must be satisfied before CKE can be registered low again.

17.17.3 Power-Down clarifications - Case 2

For certain CKE intensive operations, for example, repeated ’PD Exit - Refresh - PD Entry’ sequence, the number of clock cycles between PD Exit and

PD Entry may be insufficient to keep the DLL updated. Therefore the following conditions must be met in addition to tCKE in order to maintain proper

DRAM operation when the Refresh command is issued between PD Exit and PD Entry. Power-down mode can be used in conjunction with the Refresh

command if the following conditions are met: 1) tXP must be satisfied before issuing the command. 2) tXPDLL must be satisfied (referenced to the regis-

tration of PD Exit) before the next power-down can be entered. A detailed example of Case 2 is shown in Figure 99.

CASE 2 :

For certain CKE intensive operations, for example, repeated "PD Exit - Refresh - PD Entry" sequence, the number of clock cycles between PD Exit and PD Entry

may be insufficient to keep the DLL updated. Therefore the following conditions must be met in addition to tCKE in order to maintain proper DRAM operation when

Refresh command is issued in bet ween PD Exit and PD Entry.

Power down mode can be used in conjunction with Refresh command if the following conditions are met:

1. tXP must be satisfied before issuing the command

2. tXPDLL must be satisfied (referenced to registration of PD exit) before next power down can be entered.

T0 T1 Tn Tn + 1 Tx Ty

CMD

tCKE

tIH

CKE

tIS

tIH

tIS

NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP

Enter Power Down

tCKE

tCPDED

Enter Power Down

T0 T1 Tn Tn + 1 Tx Ty

CMD

tIH

CKE

tIS

tIH

tIS

NOP NOP NOP NOP NOP NOP NOP REN NOP NOP NOP

Enter Power Down

tXPDLL min

tCPDED

Enter Power Down

tCKE tCKE

Figure 100. Power-Down Entry/Exit Clarifications - Case3

- 118

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.17.4 Power-Down clarifications - Case 3

If an early PD Entry is issued after a Refresh command, once PD Exit is issued, NOP or DES with CKE High must be issued until tRFC(min) from the

Refresh command is satisfied. This means CKE can not be registered low twice within a tRFC(min) window. A detailed example of Case 3 is shown in

Figure 100.

CASE 3 :

If an early PD Entry is issued after Refresh command, once PD Exit is issued, NOP or DES with CKE High must be issued until tRFC from the Refresh command

is satisfied. This means CKE can not be registered low twice within tRFC window.

T0 T1 Tn Tn + 1 Tx Ty

CMD

tIH

CKE

tIS

tIH

tIS

Ref NOP NOP NOP NOP NOP NOP REN NOP NOP NOP

Enter Power Down

tXP min

tCPDED

Enter Power Down

tCKE

tRFC min

tCKE min

- 119

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

17.18 ZQ Calibration Commands

17.18.1 Calibration Description

Figure 101. ZQ Calibration Timing

ZQ Calibration command is used to calibrate DRAM Ron & ODT values over PVT. gDDR3 SDRAM needs longer time to calibrate Ron & ODT at initializa-

tion and relatively smaller time to perform periodic calibrations.

ZQCL command is used to perform the initial calibration during power-up initialization sequence. This command may be issued at any time by the control-

ler depending on the system environment. ZQCL command triggers the calibration engine inside the DRAM and once calibration is achieved the cali-

brated values are transferred from calibration engine to DRAM IO which gets reflected as updated Output Driver and ODT values.

The first ZQCL command issued after reset is allowed a timing period of tZQinit to perform the full calibration and the transfer of values. All other ZQCL

commands except the first ZQCL command issued after RESET is allowed a timing period of tZQoper.

ZQCS command is used to perform periodic calibrations to account for VT variations. A shorter timing window is provided to perform the calibration and

transfer of values as defined by timing parameter tZQCS. One ZQCS command can effectively correct a minimum of 0.5 % (ZQCorrection) of RON and

RTT impedance error within 64 nCK for all speed bins assuming the maximum sensitivities specified in the ’Output Driver Voltage and Temperature Sen-

sitivity’ and ’ODT Voltage and Temperature Sensitivity’ tables. The appropriate interval between ZQCS commands can be determined from these tables

and other application-specific parameters. One method for calculating the interval between ZQCS commands, given the temperature (Tdriftrate) and volt-

age (Vdriftrate) drift rates that the SDRAM is subject to in the application, is illustrated. The interval could be defined by the following formula:

where TSens = max(dRTTdT, dRONdTM) and VSens = max(dRTTdV, dRONdVM) define the SDRAM temperature and voltage sensitivities.

For example, if TSens = 1.5% / °C, VSens = 0.15% / mV, Tdriftrate = 1 °C / sec and

Vdriftrate = 15 mV / sec, then the interval between ZQCS commands is calculated as:

No other activities should be performed on the DRAM channel by the controller for the duration of tZQinit, tZQoper or tZQCS. The quiet time on the DRAM

channel helps in accurate calibration of Ron and ODT. Once DRAM calibration is achieved, the DRAM should disable ZQ current consumption path to

reduce power.

All banks must be precharged and tRP met before ZQCL or ZQCS commands are issued by the controller.

See "[BA=Bank Address, RA=Row Address, CA=Column Address, BC#=Burst Chop, X=Don’t Care, V=Valid]" on page 78 for a description of the ZQCL

and ZQCS commands.

ZQ calibration commands can also be issued in parallel to DLL lock time when coming out of self refresh. Upon Self-Refresh exit, gDDR3 SDRAM will not

perform an IO calibration without an explicit ZQ calibration command. The earliest possible time for ZQ Calibration command (short or long) after self

refresh exit is tXS.

In systems that share the ZQ resistor between devices, the controller must not allow any overlap of tZQoper or tZQinit or tZQCS between the devices.

17.18.2 ZQ Calibration Timing

NOTE : ODT must be disabled during calibration procedure

*1: All devices connected to DQ bus should be high impedance during calibration

17.18.3 ZQ External Resistor Value and Tolerance and Capacitive loading

In order to use the ZQ Calibration function, a 240 ohm +/- 1% tolerance external resistor must be connected between the ZQ pin and ground. The single

resistor can be used for each SDRAM or one resistor can be shared between two SDRAMs if the ZQ calibration timings for each SDRAM do not overlap.

The total capacitive loading on the ZQ pin must be limited. (See "Input/Output Capacitance" on component datasheet)

ZQCorrection

(TSens x Tdriftrate) + (VSens x Vdriftrate)

(1.5 x 1) + (0.15 x 15)

0.5 = 0.133 128ms

tZQinit or tZQoper

NOP Valid CMD NOPZQCL

CMD Valid CMDZQCS

A10=H

A10 A10=L

Don’t care

ADDR Don’t care

CKE

Hi-Z

DQ Bus*1Activities Hi-Z Activities

tZQCS

Figure 102. Functional Representation of ODT

- 120

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

18. On-Die Termination (ODT)

ODT (On-Die Termination) is a feature of the gDDR3 SDRAM that allows the DRAM to turn on/off termination resistance for each DQ, DQS, DQS and DM

for x4 and x8 configuration (and TDQS, TDQS for X8 configuration, when enabled via A11=1 in MR1) via the ODT control pin. For x16 configuration, ODT

is applied to each DQU, DQL, DQSU, DQSU, DQSL, DQSL, DMU and DML signal via the ODT control pin. The ODT feature is designed to improve sig-

nal integrity of the memory channel by allowing the DRAM controller to independently turn on/off termination resistance for any or all DRAM devices.

More details about ODT control modes and ODT timing modes can be found further down in this document :

- The ODT control modes are described in 3.1.

- The ODT synchronous mode is described in 3.2

- The dynamic ODT feature is described in 3.3

- The ODT asynchronous mode is described in 3.4

- The transitions between ODT synchronous and asynchronous are described in 3.4.1 through 3.4.4

The ODT feature is turned off and not supported in Self-Refresh mode.

A simple functional representation of the DRAM ODT feature is shown in Figure 102.

The switch is enabled by the internal ODT control logic, which uses the external ODT pin and other control information, see below. The value of RTT is

determined by the settings of Mode Register bits (see Figure 35 on page 73 and Figure 36 on page 76). The ODT pin will be ignored if the Mode Regis-

ters MR1 and MR2 are programmed to disable ODT and in self-refresh mode.

18.1 ODT Mode Register and ODT Truth Table

The ODT Mode is enabled if either of MR1 bits A2 or A6 or A9 are non zero. In this case, the value of RTT is determined by the settings of those bits (see

Figure 35 on page 73).

Application: Controller sends WR command together with ODT asserted.

- One possible application: The rank that is being written to provides termination.

- DRAM turns ON termination if it sees ODT asserted (except ODT is disabled by MR).

- DRAM does not use any write or read command decode information.

- The Termination Truth Table is shown in Table 75.

[ Table 75 ] Termination Truth Table

ODT pin DRAM Termination State

0 OFF

1 ON, (OFF, if disabled by MR1 {A9, A6, A2} and MR2 {A10, A9} in general)

RTT

other

circuity

RCV, ...

ODT VDDQ/2

Switch

DQ, DQS, DM, TDQS

- 121

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

18.2 Synchronous ODT Mode

Synchronous ODT mode is selected whenever the DLL is turned on and locked. Based on the power-down definition, these modes are:

- Any bank active with CKE high

- Refresh with CKE high

- Idle mode with CKE high

- Active power down mode (regardless of MR0 bit A12)

- Precharge power down mode if DLL is enabled during precharge power down by MR0 bit A12.

The direct ODT feature is not supported during DLL-off mode. The on-die termination resistors must be disabled by continuously registering the ODT pin

low and/or by programming the RTT_Nom bits MR1{A9,A6,A2} to {0,0,0} via a mode register set command during DLL-off mode.

In synchronous ODT mode, RTT will be turned on ODTLon clock cycles after ODT is sampled high by a rising clock edge and turned off ODTLoff clock

cycles after ODT is registered low by a rising clock edge. The ODT latency is tied to the write latency (WL) by: ODTLon = WL - 2; ODTLoff = WL - 2 .

18.2.1 ODT Latency and Posted ODT

In Synchronous ODT Mode, the Additive Latency (AL) programmed into the Mode Register (MR1) also applies to the ODT signal. The DRAM internal

ODT signal is delayed for a number of clock cycles defined by the Additive Latency (AL) relative to the external ODT signal. ODTLon = CWL + AL - 2;

ODTLoff = CWL + AL - 2. For details, refer to gDDR3 SDRAM latency definitions.

[ Table 76 ] ODT Latency

18.2.2 Timing Parameters

In synchronous ODT mode, the following timing parameters apply (see Figure 103 on page 122):

ODTLon, ODTLoff, tAON,min,max, tAOF,min,max.

Minimum RTT turn-on time (tAONmin) is the point in time when the device leaves high impedance and ODT resistance begins to turn on. Maximum RTT

turn on time (tAONmax) is the point in time when the ODT resistance is fully on. Both are measured from ODTLon.

Minimum RTT turn-off time (tAOFmin) is the point in time when the device starts to turn off the ODT resistance.

Maximum RTT turn off time (tAOFmax) is the point in time when the on-die termination has reached high impedance.

Both are measured from ODTLoff.

When ODT is asserted, it must remain high until ODTH4 is satisfied. If a Write command is registered by the SDRAM with ODT high, then ODT must

remain high until ODTH4 (BL = 4) or ODTH8 (BL = 8) after the Write command (see Figure 104 on page 122). ODTH4 and ODTH8 are measured from

ODT registered high to ODT registered low or from the registration of a Write command until ODT is registered low.

Symbol Parameter gDDR-1066 gDDR3-1333 gDDR3-1600 gDDR3-1866 gDDR3-2133 gDDR3-2400 Unit

ODTLon ODT turn on Latency WL - 2.0 = CWL + AL - 2.0 tCK

ODTLoff ODT turn on Latency WL - 2.0 = CWL + AL - 2.0

Figure 104. Synchronous ODT example with BL=4, WL=7

Figure 103. Synchronous ODT Timing Example for AL=3; CWL=5; ODTLon=AL+CWL-2=6.0; ODTLoff=AL+CWL-2=6

- 122

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16

CK/CK

ODT

DRAM_RTT

T17 T18

CMD

tAON min

tAON max

ODTH4, min

IntODT

AL = 3 AL = 3

ODTLon = CWL + AL - 2 ODTLoff = CWL + AL - 2

tAOF min

tAOF max

RTT_NOR

CWL - 2

TD_ODT_Sync-120

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16

CK/CK

ODT

DRAM_RTT

T17 T18

CMD

tAON min

tAON max

ODTH4

RTT_NOR

tAOF max

TD_ODT_ODTH - 120

WRS4

ODTH4

ODTLoff = WL - 2 ODTLoff = WL - 2

ODTLon = WL - 2

tAOF min

tAON max

tAON min

RTT_NOR

tAOF max

Figure 105. ODT must be disabled externally during Reads by driving ODT low.

- 123

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

ODT must be held high for at least ODTH4 after assertion (T1); ODT must be kept high ODTH4 (BL = 4) or ODTH8 (BL = 8) after Write command (T7 ).

ODTH is measured from ODT first registered high to ODT first registered low, or from registration of Write command with ODT high to ODT registered low.

Note that although ODTH4 is satisfied from ODT registered high at T6 ODT must not go low before T11 as ODTH4 must also be satisfied from the regis-

tration of the Write command at T7.

18.2.3 ODT during Reads:

As the gDDR3 SDRAM can not terminate and drive at the same time, RTT must be disabled at least half a clock cycle before the read preamble by driving

the ODT pin low appropriately. RTT may nominally not be enabled until one clock cycle after the end of the post-amble as shown in the example below. As

shown in Figure 105 below at cycle T15, DRAM turns on the termination when it stops driving which is determined by tHZ. If DRAM stops driving early (i.e

tHZ is early) than tAONmin timing may apply. If DRAM stops driving late (i.e tHZ is late) than DRAM complies with tAONmax timing. Note that ODT may

be disabled earlier before the Read and enabled later after the Read than shown in this example in Figure 105.

(example: CL=6; AL=CL-1=5; RL=AL+CL=11; CWL=5; ODTLon=CWL+AL-2=8; ODTLoff=CWL+AL-2=8)

diff_CK

CMD

RL = AL + CL

tAOF max

CKE

DRAM_ODT

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18

Addr A

ODTLoff = WL - 2 = CWL + AL - 2

ODTLon = WL - 2 = CWL + AL - 2

tAOFmin

RTT_NOR

tAONmin

RTT_NOR

DQSdiff

QA0 QA1 QA2 QA3 QA4 QA5 QA6 QA7

- 124

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

18.3 Dynamic ODT

In certain application cases and to further enhance signal integrity on the data bus, it is desirable that the termination strength of the gDDR3 SDRAM can

be changed without issuing an MRS command. This requirement is supported by the "Dynamic ODT" feature as described as follows:

18.3.1 Functional Description:

The Dynamic ODT Mode is enabled if bit (A9) or (A10) of MR2 is set to ’1’. The function is described as follows:

• Two RTT values are available:RTT_Nom and RTT_WR.

- The value for RTT_Nom is preselected via bits A[9,6,2] in MR1

- The value for RTT_WR is preselected via bits A[10,9] in MR2

• During operation without commands, the termination is controlled as follows;

- Nominal termination strength RTT_Nom is selected.

- Termination on/off timing is controlled via ODT pin and latencies ODTLon and ODTLoff.

• When a write command (WR, WRA, WRS4, WRS8, WRAS4, WRAS8)is registered, and if Dynamic ODT is enabled, the termination is controlled as

follows:

- A latency ODTLcnw after the write command, termination strength RTT_WR is selected.

- A latency ODTLcwn8 (for BL8, fixed by MRS or selected OTF)or ODTLcwn4 (for BC4, fixed by MRS or selected OTF) after the write command,

termination strength RTT_Nom is selected.

- Termination on/off timing is controlled via ODT pin and ODTLon, ODTLoff.

Table 77 shows latencies and timing parameters which are relevant for the on-die termination control in Dynamic ODT mode.

The dynamic ODT feature is not supported at DLL-off mode. User must use MRS command to set Rtt_WR, MR2{A10,A9}={0,0}, to disable Dynamic ODT

externally.

When ODT is asserted, it must remain high until ODTH4 is satisfied. If a Write command is registered by the SDRAM with ODT high, then ODT must

remain high until ODTH4 (BL = 4) or ODTH8 (BL = 8) after the Write command (see Figure 104) ODTH4 and ODTH8 are measured from ODT registered

high to ODT registered low or from the registration of a Write command until ODT is registered low.

[ Table 77 ] Latencies and timing parameters relevant for Dynamic ODT

NOTE : tAOF,nom and tADC,nom are 0.5 tCK (effectively adding half a clock cycle to ODTLoff, ODTcnw and ODTLcwn)

Name and Description Abbr. Defined from Define to Definition for all gDDR3

speed bins Unit

ODT turn-on Latency ODTLon registering external ODT

signal high turning termination on ODTLon = WL - 2 tCK

ODT turn-off Latency ODTLoff registering external ODT

signal low turning termination off ODTLoff = WL - 2 tCK

ODT Latency for changing from

RTT_Nom to RTT_WR ODTLcnw registering external write

command

change RTT strength from

RTT_Nom to RTT_WR ODTLcnw = WL - 2 tCK

ODT Latency for change from

RTT_WR to RTT_Nom (BL = 4) ODTLcwn4 registering external write

command

change RTT strength from

RTT_WR to RTT_Nom ODTLcwn4 = 4 + ODTLoff tCK

ODT Latency for change from

RTT_WR to RTT_Nom (BL = 8) ODTLcwn8 registering external write

command

change RTT strength from

RTT_WR to RTT_Nom ODTLcwn8 = 6 + ODTLoff tCK(avg)

minimum ODT hold time after ODT

assertion ODTH4 registering ODT high ODT registered low ODTH4 = 4 tCK(avg)

minimum ODT hold time after Write

(BL = 4) ODTH4 registering Write with ODT

high ODT registered low ODTH4 = 4 tCK(avg)

minimum ODT hold time after Write

(BL = 8) ODTH8 registering Write with ODT

high ODT registered low ODTH8 = 6 tCK(avg)

RTT change skew tADC ODTLcnw

ODTLcwn RTT valid tADC(min) = 0.3 * tCK(avg)

tADC(max) = 0.7 * tCK(avg) tCK(avg)

Figure 107. Dynamic ODT : Behavior without write command, AL=0, CWL=5

Figure 106. Dynamic ODT : Behavior with ODT being asserted before and after the write, example for BC4(via MRS or OTF), AL=0, CWL=5

- 125

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

18.3.2 ODT Timing Diagrams

The following pages provide exemplary timing diagrams as described in Table 78:

[ Table 78 ] Timing Diagrams for "Dynamic ODT"

Figure Description

Figure 106 Dynamic ODT: Behavior with ODT being asserted before and after the write.

Figure 107 Dynamic ODT: Behavior without write command, AL = 0, CWL = 5.

Figure 108 Dynamic ODT: Behavior with ODT pin being asserted together with write command for a duration of 6 clock cycles.

Figure 109 Dynamic ODT: Behavior with ODT pin being asserted together with write command for a duration of 6 clock cycles, example for

BC4 (via MRS or OTF), AL = 0, CWL = 5.

Figure 110 Dynamic ODT: Behavior with ODT pin being asserted together with write command for a duration of 4 clock cycles.

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16

CK/CK

ODT

DRAM_RTT

T17 T18

CMD WRS4

ODTLcnw

tAON max

tAON min

ODTH4, min

ODTLon ODTLoff

RTT_Nom RTT_WR RTT_Nom

tADC min tADC min

tAOF min

tADC max tADC max tAOF max

ODTLcwn4

DQS/DQS

DQ D2D0 D1 D3

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16

CK/CK

ODT

RTT

T17 T18

CMD

tAON max

tAON min

ODTH4, min

ODTLon ODTLoff

tAOF min

tAOF max

DQS/DQS

RTT_Nom

Figure 110. Dynamic ODT : Behavior with ODT pin being asserted together with write command for a duration of 4clock cycles,

Figure 109. Dynamic ODT : Behavior with ODT pin being asserted together with write command for a duration of 6clock cycles,

Figure 108. Dynamic ODT : Behavior with ODT pin being asserted together with write command for a duration of 6clock cycles,

- 126

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

example for BL8 (via MRS or OTF), AL=0, CWL=5

example for BC4 (via MRS or OTF), AL=0, CWL=5

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16

CK/CK

ODT

RTT

T17 T18

CMD

tADC max

ODTLcnw

ODTLoff

tAOF min

tAOF max

DQS/DQS

RTT_WR

WRS8

ODTH8, min

tAON min

ODTLcwn8

D6D4 D5 D7D2D0 D1 D3

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16

CK/CK

ODT

RTT

T17 T18

CMD

tADC max

ODTLcnw

ODTLoff

tADC min

tADC max

DQS/DQS

RTT_WR

WRS4

ODTH4, min

tAON min

ODTLcwn4

D2D0 D1 D3

ODTLon

tAOF min

tAOF max

RTT_Nom

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16

CK/CK

ODT

RTT

T17 T18

CMD

tADC max

ODTLcnw

ODTLoff

tAOFmin

tAOF max

DQS/DQS

RTT_WR

WRS4

ODTH4, min

tAON min

ODTLcwn4

D2D0 D1 D3

ODTLon

- 127

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

18.4 Asynchronous ODT mode

Asynchronous ODT mode is selected when DRAM runs in DLLon mode, but DLL is temporarily disabled (i.e. frozen) in precharge power-down(by MR0 bit

A12). Based on the power down mode definitions, this is currently Precharge power down mode if DLL is disabled during precharge power down by MR0

bit A12.

In asynchronous ODT timing mode, internal ODT command is NOT delayed by Additive Latency (AL) relative to the external ODT command.

In asynchronous ODT mode, the following timing parameters apply

tAONPD,min, max, tAOFPD,min,max.

Minimum RTT turn-on time (tAONPDmin)is the point in time when the device termination circuit leaves high impedance and ODT resistance begins to turn

on. Maximum RTT turn on time(tAONPDmax)is the point in time when the ODT resistance is fully on.

tAONPDmin and tAONPDmax are measured from ODT being sampled high.

Figure 111. Asynchronous ODT Timing on gDDR3 SDRAM with fast ODT transition: AL is ignored

Minimum RTT turn-off time (tAOFPDmin) is the point in time when the devices termination circuit starts to turn off the ODT resistance. Maximum ODT turn

off time (tAOFPDmax) is the point in time when the on-die termination has reached high impedance. tAOFPDmin and tAOFPDmax are measured from ODT

being sampled low.

In Precharge Power Down, ODT receiver remains active, however no Read or Write command can be issued, as the respective ADD/CMD receivers may

be disabled.

[ Table 79 ] Asynchronous ODT Timing Parameters for all Speed Bins

18.4.1 Synchronous to Asynchronous ODT Mode Transition

[ Table 80 ] ODT timing parameters for Power Down (with DLL frozen)entry and exit transition period

Symbol Description min max Unit

tAONPD Asynchronous RTT turn-on delay (Power-Down with DLL frozen) 2 8.5 ns

tAOFPD Asynchronous RTT turn-off delay (Power-Down with DLL frozen) 2 8.5 ns

Description min max

ODT to RTT turn-on delay min{ODTLon *tCK + tAONmin; tAONPDmin} max{ODTLon *tCK + tAONmax; tAONPDmax}

min{ (WL - 2.0) *tCK + tAONmin; tAONPDmin} max{ (WL - 2.0) *tCK + tAONmax; tAONPDmax}

ODT to RTT turn-off delay min{ODTLoff *tCK + tAOFmin; tAOFPDmin} max{ODTLoff *tCK + tAOFmax; tAOFPDmax}

min{ (WL - 2.0) *tCK + tAOFmin; tAOFPDmin} max{ (WL - 2.0) *tCK + tAOFmax; tAOFPDmax}

tANPD WL - 1

T0 T1 T2 T3 T4 T5 T6 Ti Ti+1 TI+2 Ti+3 Ti+4 Ti+5 Ti+6 Ta Tb Tc

CKE

ODT

DRAM_RTT

tIH

tIS

RTT_NOR

tAONPD max

tAONPD mix

tIH

tIS

tAOFPD mix

tAOFPD max

TD_ODT_Async

Figure 112. Synchronous to asynchronous transition after Refresh command (AL=0; CWL=5; tANPD=WL-1=4)

- 128

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

18.4.2 Synchronous to Asynchronous ODT Mode Transition during Powerdown Entry

if DLL is selected to be frozen in Precharge Power Down Mode by the setting of bit A12 in MR0 to "0" there is a transition period around power down

entry, where the gDDR3 SDRAM may show either synchronous or asynchronous ODT behavior.

This transition period ends when CKE is first registered low and starts tANPD before that. If there is a Refresh command in progress while CKE goes low,

then the transition period ends tRFC after the Refresh command. tANPD is equal to ( WL-1 ) and is counted (backwards)from the clock cycle where CKE is

first registered low.The transition period begins with the starting point of tANPD and terminates at the end point of tCPDED(min) as shown in Figure 112.

If there is a Refresh command in progress while CKE goes low, then the transition period ends at the later one of tRFC(min) after the Refresh command

and the end point of tCPDED(min) as shown in Figure 113. Please note that the actual starting point at tANPD is excluded from the transition period, and

the actual end point at tCPDED(min) and tRFC(min), respectively, are included in the transition period.

ODT assertion during the transition period may result in an RTT change as early as the smaller of tAONPD min and (ODTLon * tCK + tAONmin) and as late

as the larger of tAONPD max and (ODTLoff * tCK + tAONmax). ODT de-assertion during the transition period may late as the larger of tAOFPD max and

(ODTLoff * tCK + tAOFmax). Note that, if AL has a large Value, the range where RTT is uncertain becomes quite large. it shows the three different cases:

ODT_A, synchronous behavior before tANPD; ODT_B has a state change during the transition period; ODT_C shows a state change after the transition

period.

diff_CK

CMD NOP NOP

PD entry transition period

tANPD

tRFC

ODTL

tAOF max

tAOF min

ODTLoff + tAOFDmax

tAOFPD max

ODTLoff + tAOFmin

tAOFPD min

RTT

tAOFPD_max

tAOFPD_min

CKE

ODT_A_sync

DRAM_RTT_A_sync

ODT_B_tran

DRAM_RTT_B_tran

ODT_C_async

DRAM_RTT_C_async

REF

Figure 113. Synchronous to asynchronous transition after Refresh command (AL=0; CWL=5; tANPD=WL-1=4)

- 129

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

tRFC(min)

NOP

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 Ta0 Ta1 Ta2 Ta3

CKE

REF NOP NOP NOP NOP NOP NOP NOP

CMD

Last sync. ODT

Sync. or async. ODT

RTT

tANPD

tCPDEDmin

PD entry transition period

tAOFmin

RTT

ODTLoff tAOFmax

ODTLoff + tAOFPD min

tAOFPD max

RTT

ODTLoff

tAOFPDmin

ODTLoff + tAOFPD max

First async. ODT

RTT

tAOFPDmin

ODTLoff + tAOFPD max

Figure 114. Asynchronous to synchronous transition during Precharge Power Down

- 130

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

18.4.3 Asynchronous to Synchronous ODT Mode Transition during Power-Down Exit

If DLL is selected to be frozen in Precharge Power Down Mode by the setting of bit A12 in MR0 to "0", there is also a transition period around power down

exit, where either synchronous or asynchronous response to a change in ODT must be expected from the gDDR3 SDRAM.

This transition period starts tANPD before CKE is first registered high, and ends tXPDLL after CKE is first registered high. tANPD is equal to max{ODT-

Loff, ODTLon} and is counted from the clock cycle where CKE is first registered high.

ODT assertion during the transition period may result in an RTT change as early as the smaller of tAONPD min and (ODTLon * tCK + tAONmin) and as late

as the larger of tAFOPD max and (ODTLon * tCK + tAONmax). ODT de-assertion during the transition period may result in an RTT change as early as the

smaller of tAOFPD min and (ODTLoff * tCK + tAOFmin) and as late as the larger of tAOFPD max and (ODTLoff * tCK + tAOFmax).

Note that, if AL has a large Value, the range where RTT is uncertain becomes quite large. Figure 114 shows the three different cased: ODT_C, asynchro-

nous response before tANPD: ODT_B has a state change of ODT during the transition period; ODT_A shows a state change of ODT after the transition

period with synchronous response.

(with DLL frozen) exit (CL=6; AL=CL-1; CWL=5; tANPD=WL-1=9)

diff_CK

CMD

PD exit transition period

tANPD tXPDLL

tAOFPD min

CKE

ODT_C_async

DRAM_RTT_C_saync

ODT_B_tran

NOP NOP

tAOFPD max

T0 T3 T9T5 T6 T7 T8 T14T13 T15 T16 T24T22 T23 T25 T26 T27 T28

ODTLoff + tAOFmin

ODTLoff + tAOFmax

tAOFPD min

ODTLoff

DRAM_RTT_B_tran

ODT_A_async

DRAM_RTT_A_async

tAOFPD max

RTT

T29 T30 T31 T32 T33 T34 T35

RTT

tAOFmin

tAOFmax

Figure 115. Transition period for short CKE cycles with entry and exit period overlapping

- 131

datasheet gDDR3 SDRAM

Rev. 1.1

K4W1G1646G

18.4.4 Asynchronous to Synchronous ODT Mode during short CKE high and short CKE low periods

If the total time in Precharge Power Down state or Idle state is very short, the transition periods for PD entry and PD exit may overlap. In this case the

response of the gDDR3 SDRAMs RTT to a change in ODT state at the input may be synchronous OR asynchronous from the start of the PD entry transi-

tion period to the end of the PD exit transition period (even if the entry period ends later than the exit period).

If the total time in Idle state is very short, the transition periods for PD exit and PD exit and PD entry may overlap. In this case the response of the gDDR3

SDRAMs RTT to a change in ODT state at the input may be synchronous OR asynchronous from the start of the PD exit transition period to the end of the

PD entry transition period. Note that, it is assumed that there was no Refresh command in progress when Idle state was entered.

(AL=0, WL=5, tANPD=WL-1=4)

diff_CK

CMD

tRFC

CKE

REF NOPNOP NOP NOP

tANPD

PD entry transition period

PD exit transition period

tANPD tXPDLL

short CKE low transition period

CKE

tANPD

short CKE high transition period

TD_ODT_shortCKE