VBO30-08NO7 3~ 1~ Rectifier Standard Rectifier Module VRRM = 800 V I DAV = 25 A I FSM = 400 A 1~ Rectifier Bridge Part number VBO30-08NO7 - ~ ~ + Features / Advantages: Applications: Package: PWS-A Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Diode for main rectification For one phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Industry standard outline RoHS compliant Easy to mount with two screws Base plate: Aluminium internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130606d VBO30-08NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 900 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 800 V IR reverse current VF VR = 800 V TVJ = 25C 40 A TVJ = 150C 1.5 mA TVJ = 25C 1.10 V 1.25 V 1.01 V 15 A IF = 30 A IF = 15 A IF = 30 A TVJ = 125 C TC = 85C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1.21 V T VJ = 150 C 25 A TVJ = 150 C 0.80 V d = 0.5 for power loss calculation only Ptot typ. VR = 800 V IF = forward voltage drop min. 12.9 m 4.2 K/W 0.6 K/W TC = 25C 29 W t = 10 ms; (50 Hz), sine TVJ = 45C 400 A t = 8,3 ms; (60 Hz), sine VR = 0 V 430 A t = 10 ms; (50 Hz), sine TVJ = 150 C 340 A t = 8,3 ms; (60 Hz), sine VR = 0 V 365 A t = 10 ms; (50 Hz), sine TVJ = 45C 800 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 770 As TVJ = 150 C 580 As 555 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 10 pF 20130606d VBO30-08NO7 Package Ratings PWS-A Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. max. 100 Unit A -40 125 C -40 150 C Weight typ. 104 MD mounting torque MT terminal torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute Made in Germany Product Number 1.25 1.75 1.25 1.75 Nm Nm terminal to terminal 6.5 mm terminal to backside 8.5 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Circuit Diagram XXXX-XXXX YYCW Lot# Date Code Ordering Standard Part Number VBO30-08NO7 Equivalent Circuits for Simulation I V0 R0 Marking on Product VBO30-08NO7 * on die level Delivery Mode Box Code No. 470481 T VJ = 150 C Rectifier V 0 max threshold voltage 0.8 V R 0 max slope resistance * 11.7 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 20 Data according to IEC 60747and per semiconductor unless otherwise specified 20130606d VBO30-08NO7 Outlines PWS-A 7 M4 ~ 9 ~ 10 27 45 4.3 9 8 9 27 4.8 45 5 22 24 1.1 55 - IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved ~ ~ + Data according to IEC 60747and per semiconductor unless otherwise specified 20130606d VBO30-08NO7 Rectifier 350 60 50 Hz 0.8 x V RRM 800 VR = 0 V 50 300 600 40 TVJ = 45C 250 30 TVJ = 45C 400 TVJ = 150C TVJ = 150C 20 200 TVJ = 125C 150C 10 0 0.4 200 TVJ = 25C 0.6 0.8 1.0 1.2 1.4 150 10-3 1.6 Fig. 1 Forward current vs. voltage drop per diode 10-2 10-1 1 Fig. 3 I t vs. time per diode 32 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 10 2 Fig. 2 Surge overload current vs. time per diode 16 12 100 0.6 KW DC = 28 1 0.8 KW 8 1 KW 2 KW 4 KW 8 KW 24 0.5 0.4 20 0.33 0.17 16 0.08 12 8 4 4 0 0 4 8 12 0 25 50 75 100 125 150 175 0 Fig. 4 Power dissipation vs. forward current and ambient temperature per diode 0 25 50 75 100 125 150 Fig. 5 Max. forward current vs. case temperature per diode 5 4 3 Constants for ZthJC calculation: 2 1 0 1 10 100 1000 10000 i Rth (K/W) ti (s) 1 0.194 0.024 2 0.556 0.070 3 0.450 3.250 4 3.000 9.300 100000 Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130606d