UMF28N
Transistors
1/4
Power management (dual transistors)
UMF28N
2SA1774 and DTC124XE are housed independently in a UMT package.
zApplication zExternal dimensions (Unit : mm)
Power management circuit
ROHM : UMT6
EIAJ : SC-88
UMF28N
Abbreviated symbol : F28
0to0.1
(6)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
(1)
0.65
(4)
(3)
(2)
(5)
Each lead has same dimensions
zFeatures
1) Power sw itching circuit in a single package.
2) Mounting cost and area can be cut in half.
zStructure
Silicon epitaxial planar transistor
zEquiva lent circuit
R
1
R
2
DTr2 Tr1
(1)(2)(3)
(4) (5) (6)
R1=22kΩ
R2=47kΩ
zPackaging specifications
Type UMF28N
UMT6
F28
TR
3000
Package
Marking
Code
Basic ordering unit (pieces)
UMF28N
Transistors
2/4
zA bsolute maximum ratings (Ta=25°C)
Tr1
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
P
C
Limits
−60
−50
−6
−150
150
−55 to +150
150 (TOTAL)
Unit
V
V
V
mA
°C
°C
mW
∗
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power dissipation
∗ 120mW per element must not be exceeded.
DT r2
Parameter
∗ 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Symbol
V
CC
V
IN
I
O
I
C(Max.)
P
C
Tj
Tstg
Limits
50
−10 to +40
100
100
150(TOTAL)
150
−55 to +150
∗
Unit
V
V
mA
mW
°C
°C
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Range of storage temperature
zElectrical characteristics (Ta=25°C)
Tr1
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
−60
−50
−6
−
−
180
−
−
−
−
−
−
−
−
−
−
140
4
−
−
−
−0.1
−0.1
390
−0.5
−
5
VI
C
= −50µA
I
C
= −1mA
I
E
= −50µA
V
CB
= −60V
V
EB
= −6V
V
CE
= −6V, I
C
= −1mA
V
CE
= −12V, I
E
= 2mA, f = 100MHz
I
C
/I
B
= −50mA/−5mA
V
CB
= −12V, I
E
= 0A, f = 1MHz
V
V
µA
µA
−
V
MHz
pF
Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
DT r2
Parameter Symbol Min. Typ. Max. Unit Conditions
∗
Transition frequency fT−250 −MHz VCE=10V, IE= −5mA, f=100MHz
∗ Transition frequency of the device.
VI(off) −−0.4 VCC=5V, IO=100µA
Input voltage VI(on) 2.5 −−
VVO=0.3V, IO=2mA
VO(on) −0.1 0.3 VIO=10mA, II=0.5mA
Output voltage II−−
0.36 mA VI=5V
Input current IO(off) −−
0.5 µAVCC=50V, VI=0V
Output current
R115.4 22 28.6 kΩ−
Input resistance GI68 −−
−VO=5V, IO=5mA
DC current gain
−
R2/R11.7 2.1 2.6 −
Resistance ratio
UMF28N
Transistors
3/4
zElectrical characteristics curves
Tr1
-0.2
COLLECTOR CURRENT : Ic
(mA)
-50
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
VCE = −6V
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1 Grounded emitter propagation
characteristics
Ta = 100°C
25°C
−
40°C
-0.4
-4
-8
-1.20
-2
-6
-10
-0.8 -1.6 -2.0
-3.5µA
-7.0
-10.5
-14.0
-17.5
-21.0
-24.5
-28.0
-31.5
I
B
= 0
Ta = 25°C-35.0
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics ( Ι )
-40
-80
-5-3 -4-2-1
-20
-60
-100
0IB = 0
Ta = 25°C
COLLECTOR CURRENT : IC
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
-50µA
-100
-150
-200
-250
-500
-450
-400
-350
-300
500
200
100
50
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
DC CURRENT GAIN : h
FE
Ta = 25°CV
CE
= -5V
-3V
-1V
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current ( Ι )
500
200
100
50
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs. collector
current ( ΙΙ )
V
CE
= -6V
Ta = 100°C
-40°C
25°C
-0.1
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
-1
-0.5
-0.2
-0.05
Ta = 25°C
COLLECTOR SATURATION VOLTAGE : V
CE(sat) (V)
COLLECTOR CURRENT : I
C (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( Ι )
I
C
/I
B = 50
20
10
-0.1
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
-1
-0.5
-0.2
-0.05
COLLECTOR SATURATION VOLTAGE : V
CE(sat) (V)
COLLECTOR CURRENT : I
C (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
l
C
/l
B
= 10
Ta = 100°C
25°C
-40°C
50 1000.5 20
50
100
200
500
1000
12 510
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.8 Gain bandwidth product vs.
emitter current
Ta = 25°C
V
CE
= -12V
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
Collector output capacitance vs.
Emitter input capacitance vs.
collector-base voltage
emitter-base voltage
Fig.9
-0.5 -20
2
5
10
-1 -2 -5 -10
20
Cib
Cob
Ta = 25
°C
f = 1MHz
I
E = 0A
I
C = 0A
UMF28N
Transistors
4/4
DT r2
INPUT VOLTAGE : V
I(on)
(V)
OUTPUT CURRENT : I
O
(A)
100µ200µ500µ1m 2m 5m 10m 20m 50m 100m
100
50
20
10
5
2
1
500m
200m
100m
V
O
=0.3V
Ta=−40°C
25°C
100°C
Fig.1 Input voltage vs. output current
(ON characteristics)
INPUT VOLTAGE : V
I(off)
(V)
OUTPUT CURRENT : Io (A)
0 3.0
10m
1µ
2m
5m
1m
200µ
500µ
100µ
20µ
50µ
10µ
2µ
5µ
0.5 1.0 1.5 2.0 2.5
V
CC
=5V
Fig.2 Output current vs. input voltage
(OFF characteristics)
Ta=100°C
25°C
−40°C
VO=5V
100µ200µ500µ1m 2m 5m 10m 20m 50m 100m
1k
500
200
100
50
20
10
5
2
1
OUTPUT CURRENT : IO (A)
DC CURRENT GAIN : GI
Fig.3 DC current gain vs. output
current
Ta=100°C
25°C
−40°C
100µ200µ500µ1m 2m 5m 10m 20m 50m 100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
l
O
/l
I
=20
OUTPUT CURRENT : I
O
(A)
OUTPUT VOLTAGE : V
O(on)
(V)
Fig.4 Output voltage vs. output
current
Ta=100°C
25°C
−40°C
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
