NTE5426
Silicon Controlled Rectifier (SCR)
Sensitive Gate
Description:
The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device
may be switched from off–state to conduction by a current pulse applied to the gate terminal and is
designed for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, TC = +110°C), VDRM 400V. . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Reverse Voltage (Gate Open, TC = +110°C), VRRM 400V. . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (TC = +80°C, 180° Conduction Angle), IT(RMS) 10A. . . . . . . . . . . . . . . . . . . .
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50 or 60Hz), ITSM 80A. . . . . . . . . . . .
Peak Gate–Trigger Current (3µs max), IGTM 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate–Power Dissipation (IGT = IGTM), PGM 16W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation, PG(AV) 500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, Topr –40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Case, RthJC 3.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C and “Maximum Ratings” unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current IDRM,
IRRM Rated VDRM or VRRM, TC = +110°C,
RG – K = 1kΩ– – 0.1 mA
Maximum On–State Voltage VTM IT = Rated Amps – – 2.0 V
Gate Trigger Current, Continuous DC IGT Anode Voltage = 12V, RL = 60Ω– – 200 µA
Gate Trigger Voltage, Continuous DC VGT Anode Voltage = 12V, RL = 60Ω– – 0.8 V
DC Holding Current IHGate Open, RG – K = 1kΩ– – 3.0 mA
Turn–On Time tgt (td + tr) IGT = 150mA – – 2.5 µs
Critical Rate of Rise of Off–State
Voltage critical
dv/dt Gate Open, TC = +110°C,
RG – K = 1kΩ– 8 – V/µs
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Cathode
.100 (2.54) Anode
Gate
.147 (3.75)
Dia Max
Isol
