PTF080101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz Description The PTF080101S is a 10-watt, internally-matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible. Full gold metallization ensures excellent device lifetime and reliability. PTF080101S Package 32259 Features Typical EDGE Performance VDD = 28 V, IDQ = 150 mA, f = 959.8 MHz TCASE = 25C TCASE = 85C 4 40 Efficiency 3 30 2 20 1 10 EVM 0 0 28 30 Thermally-enhanced packaging * Broadband internal matching * Typical EDGE performance - Average output power = 5 W - Gain = 18.5 dB - Efficiency = 38% * Typical CW performance - Output power at P-1dB = 13 W - Gain = 17.5 dB - Efficiency = 55% * Integrated ESD protection: Human Body Model, Class 1 (minimum) * Excellent thermal stability * Low HCI drift * Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power 50 Drain Efficiency (%) RMS EVM (Average %). 5 * 32 34 36 38 Output Power (dBm) ESD: Electrostatic discharge sensitive device--observe handling precautions! RF Characteristics at TCASE = 25C unless otherwise indicated EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 150 mA, P OUT = 5.0 W, f = 959.8 MHz Characteristic Symbol Min Typ Max Units EVM (RMS) -- 2.0 -- % Modulation Spectrum @ 400 kHz ACPR -- -61 -- dBc Modulation Spectrum @ 600 kHz ACPR -- -71 -- dBc Gain Gps -- 18.5 -- dB Drain Efficiency D -- 38 -- % Error Vector Magnitude Data Sheet 1 of 9 2004-10-05 PTF080101S RF Characteristics (cont.) Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 150 mA, POUT = 10 W PEP, f = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Units Gain Gps 18.0 18.5 -- dB Drain Efficiency D 36.0 38 -- % Intermodulation Distortion IMD -- -32 -30 dBc DC Characteristics at TCASE = 25C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 A V(BR)DSS 65 -- -- V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS -- -- 1.0 A On-State Resistance VGS = 10 V, IDS = 0.1 A RDS(on) -- 0.83 -- Operating Gate Voltage VDS = 28 V, IDQ = 150 mA VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS -- -- 1.0 A Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS -0.5 to +12 V Junction Temperature TJ 200 C Total Device Dissipation PD 58 W 0.333 W/C Above 25C derate by Storage Temperature Range TSTG -40 to +150 C Thermal Resistance (TCASE = 70C) RJC 3.0 C/W Ordering Information Type Package Outline Package Description Marking PTF080101S 32259 Thermally-enhanced SMD, single-ended PTF080101S Data Sheet 2 of 9 2004-10-05 PTF080101S Typical Performance (measurements taken in production test fixture) EDGE Modulation Spectrum Performance EVM & Modulation Spectrum Performance VDD = 28 V, IDQ = 150 mA, f = 959.8 MHz 2.0 50 400 kHz 30 -65 20 -70 600 kHz 10 -75 Drain Efficiency (%) 40 -60 EVM RMS (Average %) . Efficiency 28 30 32 34 36 38 400 KHz 1.8 -60 1.6 -65 EVM -70 1.4 1.2 1.0 0.08 0 -80 -55 600 KHz 0.10 Output Power (dBm) 0.12 0.14 0.16 0.18 0.20 -75 Modulation Spectrum (dBc) TCASE = 25C TCASE = 85C -55 Modulation Spectrum (dBc) VDD = 28 V, POUT = 4 W, f = 959.8 MHz -80 0.22 Quiscent Drain Current (A) Gain & Efficiency vs. Output Power Broadband Performance VDD = 28 V, IDQ = 150 mA, f = 960 MHz VDD = 28 V, IDQ = 150 mA, POUT = 10 W 30 70 21 60 19 50 Gain 18 40 17 30 16 20 Efficiency 15 10 0 14 20 25 30 35 40 20 10 40 0 30 -10 -20 840 45 Output Power (dBm) 50 Gain Return Loss 860 880 20 900 920 940 Drain Efficiency (%) 60 Gain (dB), Return Loss (dB) 20 Drain Efficiency (%) Gain (dB) Efficiency 10 960 Frequency (MHz) All published data at TCASE = 25C unless otherwise indicated Data Sheet 3 of 9 2004-10-05 PTF080101S Typical Performance (cont.) Gain vs. Output Power Output Power vs. Supply Voltage VDD = 28 V, f = 960 MHz IDQ = 150 mA, f = 960 MHz 42 20.5 Output Power (dBm) 19.5 IDQ = 150 mA 18.5 IDQ = 50 mA 41 40 39 38 37 17.5 27 30 33 36 39 20 42 25 Output Power (dBm) 35 Supply Voltage (V) Intermodulation Distortion vs. Output Power 3-Carrier CDMA 2000 Performance VDD = 28 V, IDQ = 150 mA, f1 = 959 MHz, f2 = 960 MHz VDD = 28 V, IDQ = 150 mA, f = 960 MHz -20 3rd Order Drain Efficiency (%) -30 IMD (dBc) 30 5th -40 -50 7th -60 -70 50 -30 45 -35 40 -40 35 Adj 1.98 MHz 30 -45 -50 Alt 1, 3.21 MHz 25 -55 20 -60 15 -65 10 -70 Alt 2, 5.23 MHz 5 -75 Efficiency 0 -80 25 30 35 40 24 26 28 30 32 34 36 38 40 Output Power (dBm) Output Power, PEP (dBm) Data Sheet -80 22 45 Adj. Ch. Power Ratio (dBc) Power Gain (dB) IDQ = 300 mA 4 of 9 2004-10-05 PTF080101S Typical Performance (cont.) IS-95 CDMA Performance Gate-Source Voltage vs. Temperature VDD = 28 V, IDQ = 150 mA, f = 960 MHz Voltage normalized to typical gate voltage, series show current -45 Adj 750 kHz 30 -50 25 -55 20 -60 Efficiency 15 -65 10 -70 5 -75 Alt 1 1.98MHz 0 Normalized Bias Voltage 35 Drain Efficiency (%) 1.04 -40 Adj. Ch. Power Ratio (dBc) 40 22 24 26 28 30 32 34 1.02 1.01 0.97 A 1.20 A 1.00 0.99 0.98 0.97 0.96 -80 18 20 0.05 A 0.28 A 0.51 A 0.74 A 1.03 -20 36 38 0 Output Power (dBm), Avg. 20 40 60 80 100 Case Temperature (C) Broadband Circuit Impedance Z0 = 50 D NER ATO R --> Z Load G 0. 2 Z Source 960 MHz 860 MHz S Z Load 0 .1 Z Load jX R jX 860 1.4 -0.8 10.0 8.0 880 1.3 -0.2 10.0 8.4 900 1.4 0.2 10.0 8.7 920 1.5 0.5 10.0 9.0 940 1.5 1.0 10.1 9.3 960 1.6 1.1 10.3 9.4 Data Sheet 5 of 9 Z Source 960 MHz 0.2 R 0.1 MHz 0.0 Z Source W ARD L OA D T HS T O Frequency 860 MHz 0.1 2004-10-05 PTF080101S Reference Circuit C11 0.001F R5 1.3KV R4 1.2KV QQ1 LM7805 VDD Q1 BCP56 C12 0.001F C13 0.001F R7 24KV R6 2K V R8 5.1KV + C14 10 F R9 10 V C1 36 pF C15 0.1 F R10 5.1KV l17 l10 C5 36pF R11 10 V C9 36 pF DUT l1 l3 l4 C2 2.4 pF l2 l5 C3 36 pF V DD l9 l16 RF_IN l11 + C7 C6 36 pF 100 F l6 l7 l8 l12 C4 7.5pF l13 C8 2.7 pF l14 l15 RF_OUT C10 3.0 pF 080101sf_sch Reference Circuit Schematic for 960 MHz Circuit Assembly Information DUT PCB PTF080101S 0.76 mm [.030"] thick, Microstrip Electrical Characteristics at 960 MHz* l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 l14 l15 l16 l17 r = 4.5 LDMOS Transistor 2 oz. copper Rogers TMM4 Dimensions: L x W (mm) Dimensions: L x W (in.) 0.023 , 50.0 0.172 , 16.0 0.044 , 50.0 0.084 , 50.0 0.149 , 9.3 0.010 , 9.3 0.023 , 27.0 0.065 , 11.9 0.031 , 70.0 0.108 , 70.0 0.108 , 70.0 0.094 , 11.9 0.041 , 11.9 0.078 , 50.0 0.011 , 50.0 0.076 , 70.0 0.165 , 70.0 3.68 x 1.27 25.40 x 0.64 6.99 x 1.27 13.46 x 1.27 21.46 x 11.94 1.52 x 11.94 3.56 x 3.25 9.53 x 9.02 5.08 x 0.64 17.78 x 0.64 17.78 x 0.64 13.72 x 9.02 5.97 x 9.02 12.45 x 1.27 1.78 x 1.27 11.18 x 0.64 24.38 x 0.64 0.145 1.000 0.275 0.530 0.845 0.060 0.140 0.375 0.200 0.700 0.700 0.540 0.235 0.490 0.070 0.440 0.960 x x x x x x x x x x x x x x x x x 0.050 0.025 0.050 0.050 0.470 0.470 0.128 0.355 0.025 0.025 0.025 0.355 0.355 0.050 0.050 0.025 0.025 *Electrical characteristics are rounded. Data Sheet 6 of 9 2004-10-05 PTF080101S Reference Circuit (cont.) R8 C14 V DD C12 R8 C14 + C15 + VDD QQ1 C11 C15 R6 R7 C1 LM C13 C6 RF_IN R11 R6 R7 C1 V DD C11 Q1 R9 R10 R5 R4 C5 C9 C3 C2 C4 QQ1 C13 LM C7 + Q1 R9 R10 R 5 R4 C12 R11 080101s_assy-dtl RF_OUT C10 C8 080101s_assy Reference Circuit1 (not to scale) Component Description Manufacturer P/N or Comment C2 C1, C3, C5, C6, C9 C4 C7 C8 C10 C11, C12, C13 C14 C15 Q1 QQ1 R1, R2, R3 R4 R5 R6 R7 R8, R10 R9, R11 Capacitor, 2.4 pF Capacitor, 36 pF Capacitor, 7.5 pF Capacitor, 100 F,50 V Capacitor, 2.7 pF Capacitor, 3.0 pF Capacitor, 0.001 F Capacitor, 10 F, 35 V Capacitor, 0.1 F Transistor Voltage Regulator Resistor, 220 ohm, 1/4W Resistor 1.2 k-ohms Resistor 1.3 k-ohms Potentiometer 2 k-ohms Resistor 24 k-ohms Resistor 5.1 k-ohms Resistor, 10 ohms ATC ATC ATC Digi-Key ATC ATC Digi-Key Digi-Key Digi-Key National Semiconductor Infineon Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 100B 2R4 100B 360 100B 7R5 P5182-ND 100B 2R7 100B 3R0 PCC1772CT-ND PCS6106TR-ND P4525-ND BCP56 LM7805 220QBK P1.2KGCT-ND P1.3KGCT-ND 3224W-202ETR-ND P24KECT-ND P5.1KECT-ND P10ECT-ND 1Gerber files for this circuit are available on request. Data Sheet 7 of 9 2004-10-05 PTF080101S Package Outline Specifications Package 32259 1.78 [.070] 60 X 6.60 [60 X .260] 2X 3.30 [.130] 2X 0.200.03 [.008.001] C L 4X R0.25 [R.010] MAX. D 2X 1.27 [.050] 1.02 [0.040] 0.51 [0.020] 2X 3.30 [.130] 6.86 [.270] C L 4X 0.51 [.020] G 4X 0.25 MAX [.010] 10.160.25 [.400.010] 2X 1.650.51 [.065.020] LEAD COPLANARITY BOTTOM OF LEAD TO BOTTOM OF PACKAGE .000.002 (TYP) 6.86 [.270] 6.48 [.255] SQ 0.740.05 [.028.002] 2.99 0.38 [1.14 .010] S 0-7 DRAFT ANGLE 6.35 [.250] SQ H-32259-2-1-2307 Diagram Notes: 1. Lead thickness: 0.21 0.03 [.008 .001]. 2. All tolerances 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products. Data Sheet 8 of 9 2004-10-05 PTF080101S Confidential, Limited Internal Revision History: 2004-10-05 Previous Version: 2004-08-23, Preliminary Data Sheet Page Data Sheet Subjects (major changes since last revision) Add specification data and information, remove Preliminary Status We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS(R) is a registered trademark of Infineon Technologies AG. Edition 2004-10-05 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 2004-10-05