PTF080101SV1 - Infineon Technologies

Data Sheet 1 of 9 2004-10-05

Typical EDGE Performance

VDD = 28 V, IDQ = 150 mA, f = 959.8 MHz

28 30 32 34 36 38

Output Power (dBm)

RMS EVM (Average %).

Drain Efficiency (%)

EVM

Efficiency

TCASE = 25°C

TCASE = 85°C

PTF080101S

Features

•Thermally-enhanced packaging

•Broadband internal matching

•Typical EDGE performance

- Average output power = 5 W

- Gain = 18.5 dB

- Efficiency = 38%

•Typical CW performance

- Output power at P–1dB = 13 W

- Gain = 17.5 dB

- Efficiency = 55%

•Integrated ESD protection: Human Body

Model, Class 1 (minimum)

•Excellent thermal stability

•Low HCI drift

•Capable of handling 10:1 VSWR @ 28 V,

10 W (CW) output power

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Thermally-Enhanced High Power RF LDMOS FET

10 W, 860 – 960 MHz

PTF080101S

Package 32259

RF Characteristics at TCASE = 25°C unless otherwise indicated

EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 28 V, IDQ = 150 mA, POUT = 5.0 W, f = 959.8 MHz

Characteristic Symbol Min Typ Max Units

Error Vector Magnitude EVM (RMS) —2.0 —%

Modulation Spectrum @ 400 kHz ACPR —–61 —dBc

Modulation Spectrum @ 600 kHz ACPR —–71 —dBc

Gain Gps —18.5 —dB

Drain Efficiency ηD—38 —%

Description

The PTF080101S is a 10-watt, internally-matched GOLDMOS FET in-

tended for EDGE and CDMA applications in the 860 to 960 MHz band.

Thermally-enhanced packaging provides the coolest operation possible.

Full gold metallization ensures excellent device lifetime and reliability.

Data Sheet 2 of 9 2004-10-05

PTF080101S

RF Characteristics (cont.)

Two-Tone Measurements (tested in Infineon test fixture)

VDD = 28 V, IDQ = 150 mA, POUT = 10 W PEP, f = 960 MHz, tone spacing = 1 MHz

Characteristic Symbol Min Typ Max Units

Gain Gps 18.0 18.5 —dB

Drain Efficiency ηD36.0 38 —%

Intermodulation Distortion IMD —–32 –30 dBc

DC Characteristics at TCASE = 25°C unless otherwise indicated

Characteristic Conditions Symbol Min Typ Max Units

Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V

Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA

On-State Resistance VGS = 10 V, IDS = 0.1 A RDS(on) —0.83 —Ω

Operating Gate Voltage VDS = 28 V, IDQ = 150 mA VGS 2.5 3.2 4.0 V

Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage VDSS 65 V

Gate-Source Voltage VGS –0.5 to +12 V

Junction Temperature TJ200 °C

Total Device Dissipation PD58 W

Above 25°C derate by 0.333 W/°C

Storage Temperature Range TSTG –40 to +150 °C

Thermal Resistance (TCASE = 70°C) RθJC 3.0 °C/W

Ordering Information

Type Package Outline Package Description Marking

PTF080101S 32259 Thermally-enhanced SMD, single-ended PTF080101S

Data Sheet 3 of 9 2004-10-05

PTF080101S

EDGE Modulation Spectrum Performance

VDD = 28 V, IDQ = 150 mA, f = 959.8 MHz

-80

-75

-70

-65

-60

-55

28 30 32 34 36 38

Output Power (dBm)

Modulation Spectrum (dBc)

Drain Efficiency (%)

Efficiency

400 kHz

600 kHz

TCASE = 25°C

TCASE = 85°C

EVM & Modulation Spectrum Performance

V DD = 28 V, POUT = 4 W, f = 959.8 MHz

1.0

1.2

1.4

1.6

1.8

2.0

0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22

Quiscent Drain Current (A)

EVM RMS (Average %)

-80

-75

-70

-65

-60

-55

Modulation Spectrum (dBc)

EVM

400 KHz

600 KHz

Gain & Efficiency vs. Output Power

VDD = 28 V, IDQ = 150 mA, f = 960 MHz

20 25 30 35 40 45

Output Power (dBm)

Gain (dB)

Drain Efficiency (%)

Efficiency

Gain

Broadband Performance

VDD = 28 V, IDQ = 150 mA, POUT = 10 W

-20

-10

840 860 880 900 920 940 960

Frequency (MHz)

Gain (dB), Return Loss (dB)

Drain Efficiency (%)

Gain

Return Loss

Efficiency

Typical Performance (measurements taken in production test fixture)

All published data at TCASE = 25°C unless otherwise indicated

Data Sheet 4 of 9 2004-10-05

PTF080101S

Gain vs. Output Power

VDD = 28 V, f = 960 MHz

17.5

18.5

19.5

20.5

27 30 33 36 39 42

Output Power (dBm)

Power Gain (dB)

IDQ = 150 mA

IDQ = 300 mA

IDQ = 50 mA

Output Power vs. Supply Voltage

IDQ = 150 mA, f = 960 MHz

20 25 30 35

Supply Voltage (V)

Output Power (dBm)

Intermodulation Distortion vs. Output Power

VDD = 28 V, IDQ = 150 mA, f1 = 959 MHz, f2 = 960 MHz

-80

-70

-60

-50

-40

-30

-20

25 30 35 40 45

Output Power, PEP (dBm)

IMD (dBc)

3rd Order

7th

5th

3-Carrier CDMA 2000 Performance

VDD = 28 V, IDQ = 150 mA, f = 960 MHz

22 24 26 28 30 32 34 36 38 40

Output Power (dBm)

Drain Efficiency (%)

-80

-75

-70

-65

-60

-55

-50

-45

-40

-35

-30

Adj. Ch. Power Ratio (dBc)

Efficiency Alt 2, 5.23 MHz

Adj 1.98 MHz

Alt 1, 3.21 MHz

Typical Performance (cont.)

Data Sheet 5 of 9 2004-10-05

PTF080101S

IS-95 CDMA Performance

VDD = 28 V, IDQ = 150 mA, f = 960 MHz

18 20 22 24 26 28 30 32 34 36 38

Output Power (dBm), Avg.

Drain Efficiency (%)

-80

-75

-70

-65

-60

-55

-50

-45

-40

Adj. Ch. Power Ratio (dBc)

Adj 750 kHz

Alt 1 1.98MHz

Efficiency

Gate-Source Voltage vs. Temperature

Voltage normalized to typical gate voltage,

series show current

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

1.04

-20 020 40 60 80 100

Case Temperature (°C)

Normalized Bias Voltage

0.05 A

0.28 A

0.51 A

0.74 A

0.97 A

1.20 A

Broadband Circuit Impedance

0.1

0.2

0.1

0.2

--->

960 MHz

860 MHz

Z Load

Z Source

Z0 = 50 Ω

Frequency Z Source ΩZ Load Ω

MHz RjX RjX

860 1.4 –0.8 10.0 8.0

880 1.3 –0.2 10.0 8.4

900 1.4 0.2 10.0 8.7

920 1.5 0.5 10.0 9.0

940 1.5 1.0 10.1 9.3

960 1.6 1.1 10.3 9.4

Z Source Z Load

Typical Performance (cont.)

Data Sheet 6 of 9 2004-10-05

PTF080101S

080101sf_sch

24KVR6

2KV

C13

0.001µF

C12

0.001µF

BCP56

1.3KVR4

1.2KV

LM7805

C11

0.001µF

VDD

QQ1

5.1KV

36 pF

7.5pF 2.7 pF

36pF 100 µF 36 pF

VDD

l1l3l4l5l7l13 l15

R10

R11

DUT

RF_IN

C5 C6 C7

36 pF

C1 5.1KV

10V

l22.4 pF

C2 C3

36 pF

l6l8

l10 l11 +

l12 l14

3.0 pF

C10

l16

l17

C15

R9V

C14

10 µF 0.1 µF

RF_OUT

Reference Circuit

Reference Circuit Schematic for 960 MHz

Circuit Assembly Information

DUT PTF080101S LDMOS Transistor

PCB 0.76 mm [.030”] thick, εr = 4.5 2 oz. copper Rogers TMM4

Microstrip Electrical Characteristics at 960 MHz* Dimensions: L x W (mm) Dimensions: L x W (in.)

l10.023 λ, 50.0 Ω3.68 x 1.27 0.145 x 0.050

l20.172 λ, 16.0 Ω25.40 x 0.64 1.000 x 0.025

l30.044 λ, 50.0 Ω6.99 x 1.27 0.275 x 0.050

l40.084 λ, 50.0 Ω13.46 x 1.27 0.530 x 0.050

l50.149 λ, 9.3 Ω21.46 x 11.94 0.845 x 0.470

l60.010 λ, 9.3 Ω1.52 x 11.94 0.060 x 0.470

l70.023 λ, 27.0 Ω3.56 x 3.25 0.140 x 0.128

l80.065 λ, 11.9 Ω9.53 x 9.02 0.375 x 0.355

l90.031 λ, 70.0 Ω5.08 x 0.64 0.200 x 0.025

l10 0.108 λ, 70.0 Ω17.78 x 0.64 0.700 x 0.025

l11 0.108 λ, 70.0 Ω17.78 x 0.64 0.700 x 0.025

l12 0.094 λ, 11.9 Ω13.72 x 9.02 0.540 x 0.355

l13 0.041 λ, 11.9 Ω5.97 x 9.02 0.235 x 0.355

l14 0.078 λ, 50.0 Ω12.45 x 1.27 0.490 x 0.050

l15 0.011 λ, 50.0 Ω1.78 x 1.27 0.070 x 0.050

l16 0.076 λ, 70.0 Ω11.18 x 0.64 0.440 x 0.025

l17 0.165 λ, 70.0 Ω24.38 x 0.64 0.960 x 0.025

*Electrical characteristics are rounded.

Data Sheet 7 of 9 2004-10-05

PTF080101S

Reference Circuit (cont.)

Reference Circuit1 (not to scale)

Component Description Manufacturer P/N or Comment

C2 Capacitor, 2.4 pF ATC 100B 2R4

C1, C3, C5, C6, C9 Capacitor, 36 pF ATC 100B 360

C4 Capacitor, 7.5 pF ATC 100B 7R5

C7 Capacitor, 100 µF,50 V Digi-Key P5182-ND

C8 Capacitor, 2.7 pF ATC 100B 2R7

C10 Capacitor, 3.0 pF ATC 100B 3R0

C11, C12, C13 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND

C14 Capacitor, 10 µF, 35 VDigi-Key PCS6106TR-ND

C15 Capacitor, 0.1 µF Digi-Key P4525-ND

Q1 Transistor National Semiconductor BCP56

QQ1 Voltage Regulator Infineon LM7805

R1, R2, R3 Resistor, 220 ohm, 1/4W Digi-Key 220QBK

R4 Resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND

R5 Resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND

R6 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND

R7 Resistor 24 k-ohms Digi-Key P24KECT-ND

R8, R10 Resistor 5.1 k-ohms Digi-Key P5.1KECT-ND

R9, R11 Resistor, 10 ohms Digi-Key P10ECT-ND

1Gerber files for this circuit are available on request.

VDD

R10

QQ1

C12

C13

C15

R7 LM

C14

R11

C11

080101s_assy-dtl

080101s_assy

RF_IN RF_OUT

C11

C12

C10

R11

C14

R7 C13

QQ1

VDD

C15

R10

VDD

C1 C7

Data Sheet 8 of 9 2004-10-05

PTF080101S

Package Outline Specifications

Package 32259

Diagram Notes:

1. Lead thickness: 0.21 ±0.03 [.008 ± .001].

2. All tolerances ± 0.127 [.005] unless specified otherwise.

3. Pins: D = drain, S = source, G = gate.

4. Interpret dimensions and tolerances per ASME Y14.5M-1994.

5. Primary dimensions are mm. Alternate dimensions are inches.

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/products.

2X 3.30

[.130]

1.02 [0.040]

0.51 [0.020]

2X 0.20±0.03

[.008±.001]

4X R0.25

[R.010]

MAX.

0°-7°

DRAFT ANGLE

10.16±0.25

[.400±.010]

6.86

[.270]

2X 1.65±0.51

[.065±.020]

2X 1.27

[.050]

2X 3.30

[.130]

4X 0.51

[.020]

4X 0.25 MAX

[.010]

6.35

[.250] SQ

6.86

[.270]

6.48

[.255] SQ

0.74±0.05

[.028±.002]

1.78

[.070]

2.99 ±0.38

[1.14 ±.010]

H-32259-2-1-2307

LEAD COPLANARITY

BOTTOM OF LEAD

TO BOTTOM OF PACKAGE

.000±.002 (TYP)

60° X 6.60

[60° X .260]

Data Sheet 9 of 9 2004-10-05

GOLDMOS® is a registered trademark of Infineon Technologies AG.

Edition 2004-10-05

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

81669 München, Germany

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee of

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office (www.infineon.com/rfpower).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of

Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support

device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it

is reasonable to assume that the health of the user or other persons may be endangered.

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

highpowerRF@infineon.com

To request other information, contact us at:

+1 877 465 3667 (1-877-GOLDMOS) USA

or +1 408 776 0600 International

PTF080101S

Confidential, Limited Internal

Revision History: 2004-10-05 Data Sheet

Previous Version: 2004-08-23, Preliminary Data Sheet

Page Subjects (major changes since last revision)

Add specification data and information, remove Preliminary Status