ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 1/29
SDRAM 1M x 16Bit x 2Banks
Synchronous DRAM
FEATURES
z JEDEC standard 3.3V power supply
z LVTTL compatible with multiplexed address
z Dual banks operation
z MRS cycle with address key programs
- CAS Latency (2 & 3 )
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
z All inputs are sampled at the positive going edge of the
system clock
z Burst Read Single-bit Write operation
z DQM for masking
z Auto & self refresh
z 64ms refresh period (4K cycle)
GENERAL DESCRIPTION
The M12L32162A is 33,554,432 bits synchronous high
data rate Dynamic RAM organized as 2 x 1,048,576 words
by 16 bits, fabricated with high performance CMOS
technology. Synchronous design allows precise cycle
control with the use of system clock I/O transactions are
possible on every clock cycle. Range of operating
frequencies, programmable burst length and programmable
latencies allow the same device to be useful for a variety of
high bandwidth, high performance memory system
applications.
ORDERING INFORMATION
Part NO. MAX Freq. PACKAGE COMMENTS
M12L32162A-5TG 200MHz 54Pin TSOP(II) Pb-free
M12L32162A-6TG 166MHz 54Pin TSOP(II) Pb-free
M12L32162A-7TG 143MHz 54Pin TSOP(II) Pb-free
M12L32162A-5BG 200MHz 54 Ball BGA Pb-free
M12L32162A-6BG 166MHz 54 Ball BGA Pb-free
M12L32162A-7BG 143MHz 54 Ball BGA Pb-free
PIN CONFIGURATION (TOP VIEW)
54 PIN TSOP(II) 54 Ball BGA(8mmx8mm)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
WE
CAS
RAS
CS
NC
BA
A
10
/AP
A
0
A
1
A
2
A
3
V
DD
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
V
SS
NC
UDQM
CLK
CKE
NC
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
VSS
DQ14
DQ12
DQ8
UDQM
DQ15
DQ13
DQ11
DQ9
NC
CLK
A11
A7
NC
A8
VSSQ
CKE
A9
A6
123456789
A
B
C
D
E
F
G
H
J
DQ0
DQ2
DQ4
DQ6
LDQM
RAS
NC
A1
VDD
DQ1
DQ3
DQ5
DQ7
WE
CS
A10
VDDQ
VSSQ
VDDQ
VSSQ
VDD
CAS
BA
A0
DQ10
A5
VSS A4 A2 VDDA9
VDD Q
VSSQ
VDD Q
VSS
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 2/29
FUNCTIONAL BLOCK DIAGRAM
Bank Select Data Input Register
Column Decoder
Latency & Burst Length
Programming Register
1M x 16
1M x 16
Timing Register
CLK CKE CS RAS CAS WE L(U)DQM
LDQM
LWCBR
DQi
LDQM
LWE
LRAS LCBR LWE LCAS
CLK
ADD
LCKE
PIN FUNCTION DESCRIPTION
Pin Name Input Function
CLK System Clock Active on the positive going edge to sample all inputs.
CS Chip Select Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and L(U)DQM.
CKE Clock Enable Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
A0 ~ A11 Address Row / column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, column address : CA0 ~ CA7
BA Bank Select Address Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
RAS Row Address Strobe Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
CAS Column Address S trobe Latches column addresses on the positive going edge of the CLK with
CAS low.
Enables column access.
WE Write Enable Enables write operation and row precharge.
Latches data in starting from CAS , WE active.
L(U)DQM Data Input / Output Mask Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 3/29
DQ0 ~ 15 Data Input / Output Data inputs/outputs are multiplexed on the same pins.
VDD/VSS Power Supply/Ground Power and ground for the input buffers and the core logic.
VDDQ/VSSQ Data Output Power/Ground Isolated power supply and ground for the output buffers to provide improved
noise immunity.
N.C/RFU No Connection/
Reserved for Future Use This pin is recommended to be left No Connection on the device.
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Unit
Voltage on any pin relative to VSS VIN,VOUT -1.0 ~ 4.6 V
Voltage on VDD supply relative to VSS VDD,VDDQ -1.0 ~ 4.6 V
Storage temperature TSTG -55 ~ + 150 C°
Power dissipation PD 0.7 W
Short circuit current IOS 50 MA
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA=0 to 70 C° )
Parameter Symbol Min Typ Max Unit Note
Supply voltage VDD,VDDQ 3.0 3.3 3.6 V
Input logic high voltage VIH 2.0 3.0 VDD+0.3 V 1
Input logic low voltage VIL -0.3 0 0.8 V 2
Output logic high voltage VOH 2.4 - - V IOH =-2mA
Output logic low voltage VOL - - 0.4 V IOL = 2mA
Input leakage current IIL -5 - 5 uA 3
Output leakage current IOL -5 - 5 uA 4
Note : 1.VIH (max) = 4.6V AC for pulse width ≤ 10ns acceptable.
2.VIL (min) = -1.5V AC for pulse width ≤ 10ns acceptable.
3.Any input 0V ≤ VIN ≤ VDD+ 0.3V, all other pins are not under test = 0V.
4.Dout is disabled, 0V ≤ VOUT ≤ VDD.
CAPACITANCE (VDD = 3.3V, TA = 25 C° , f = 1MHz)
Pin Symbol Min Max Unit
CLOCK CCLK 2.5 4.0 pF
RAS , CAS , WE , CS , CKE, LDQM,
UDQM CIN 2.5 5.0 pF
ADDRESS CADD 2.5 5.0 pF
DQ0 ~DQ15 COUT 4.0 6.5 pF
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 4/29
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70 C° VIH(min)/VIL(max)=2.0V/0.8V)
Version
Parameter Symbol Test Condition CAS
Latency -5 -6 -7 Unit Note
Operating Current
(One Bank Active) ICC1 Burst Length = 1
tRC ≥ tRC (min), tCC ≥ tCC (min), IOL= 0mA 160 140 100 mA 1
ICC2P CKE ≤VIL(max), tCC =15ns 2 mA
Precharge Standby
Current in power-down
mode ICC2PS CKE ≤VIL(max), CLK
≤
VIL(max), tCC =
∞
2
ICC2N CKE ≥VIH(min), CS ≥VIH(min), tCC =15ns
Input signals are changed one time during 30ns
25 mA
Precharge Standby
Current in non
power-down mode
ICC2NS
CKE ≥VIH(min), CLK
≤
VIL(max), tCC =
∞
Input signals are stable 15 mA
ICC3P CKE ≤VIL(max), tCC =15ns 10
Active Standby Current
in power-down mode ICC3PS CKE ≤ VIL(max), CLK
≤
VIL(max), tCC =
∞
10
mA
ICC3N CKE ≥VIH(min), CS ≥ VIH(min), tCC=15ns
Input signals are changed one time during 2clks
All other pins ≥ V
DD-0.2V or
≤
0.2V
25 mA
Active Standby Current
in non power-down
mode
(One Bank Active)
ICC3NS CKE ≥VIH (min), CLK
≤
VIL(max), tCC=
∞
Input signals are stable 15 mA
3 160 140 120 1
Operating Current
(Burst Mode) ICC4
IOL= 0mA, Page Burst
All Band Activated, tCCD = tCCD (min)
2 160 140 120
mA
Refresh Current ICC5 tRC ≥tRC(min) 160 140 120
mA 2
Self Refresh Current ICC6 CKE ≤0.2V 1 mA
Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min).
2.Refresh period is 64ms. Addresses are changed only one time during tCC(min).
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 5/29
AC OPERATING TEST CONDITIONS (VDD=3.3V ±0.3V,TA= 0 to 70 C°)
Parameter Value Unit
Input levels (Vih/Vil) 2.4 / 0.4 V
Input timing measurement reference level 1.4 V
Input rise and fall time tr / tf = 1 / 1 ns
Output timing measurement reference level 1.4 V
Output load condition See Fig.2
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Version
Parameter Symbol
-5 -6 -7
Unit Note
Row active to row active delay tRRD(min) 10 12 14 ns 1
RAS to CAS delay tRCD(min) 15 18 20 ns 1
Row precharge time tRP(min) 15 18 20 ns 1
tRAS(min) 32 36 42 ns 1
Row active time
tRAS(max) 100 us
Row cycle time tRC(min) 60 62 63 ns 1
Last data in to new col. Address delay tCDL(min) 1 CLK 2
Last data in to row precharge tRDL(min) 2 CLK 2
Last data in to burst stop tBDL(min) 1 CLK 2
Col. Address to col. Address delay tCCD(min) 1 CLK 3
CAS latency=3 2
Number of valid output data
CAS latency=2 1
ea 4
Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and
then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
The earliest a precharge command can be issued after a Read command without the loss of data is CL+BL-2 clocks.
3.3V
Output
(Fig.2) AC Output Load Circuit
30 pF
Vtt =1.4V
VOH(DC) = 2.4V, IOH = -2mA
VOL(DC) = 0.4V, IOL = 2mA
30 pF
Output
(Fig.1) DC Output Load circuit
Z0=50 Ω
870 Ω
1200 Ω
50 Ω
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 6/29
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
-5 -6 -7
Parameter Symbol Min Max Min Max Min Max Unit Note
CAS Latency =3 5 6 7
CLK cycle time CAS Latency =2 tCC 10 1000 10 1000 10 1000 ns 1
CAS Latency =3 5 5.5 6
CLK to valid
output delay CAS Latency =2 t
SAC 5 5.5 6
ns 1
Output data hold time tOH 2 2 2.5 ns 2
CLK high pulse width tCH 2 2 2.5 ns 3
CLK low pulse width tCL 2 2 2.5 ns 3
Input setup time tSS 2 2 2 ns 3
Input hold time tSH 2 2 2 ns 3
CLK to output in Low-Z tSLZ 0 0 0 ns 2
CAS Latency =3 5 5.5 6
CLK to output in
Hi-Z CAS latency =2
t
SHZ
5 5.5 6
ns
*All AC parameters are measured from half to half.
Note: 1.Parameters depend on programmed CAS latency.
2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3.Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the
parameter.
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 7/29
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
Address BA A11~A10/AP A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Function RFU RFU W.B.L TM CAS Latency BT Burst Length
Test Mode CAS Latency Burst Type Burst Length
A8 A7 Type A6 A5 A4 Latency A3 Type A2 A1 A0 BT = 0 BT = 1
0 0 Mode Register Set 0 0 0 Reserved 0 Sequential 0 0 0 1 1
0 1 Reserved 0 0 1 Reserved 1 Interleave 0 0 1 2 2
1 0 Reserved 0 1 0 2 0 1 0 4 4
1 1 Reserved 0 1 1 3
0 1 1 8 8
Write Burst Length 1 0 0 Reserved 1 0 0 Reserved Reserved
A9 Length 1 0 1 Reserved 1 0 1 Reserved Reserved
0 Burst 1 1 0 Reserved 1 1 0 Reserved Reserved
1 Single Bit 1 1 1 Reserved
1 1 1 Full Page Reserved
Full Page Length : 256
Note : 1. RFU(Reserved for future use) should stay “0” during MRS cycle.
2. If A9 is high during MRS cycle, “Burst Read Single Bit Write” function will be enabled.
3. The full column burst (256 bit) is available only at sequential mode of burst type.
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 8/29
Burst Length and Sequence
(Burst of Two)
Starting Address
(column address A0 binary)
Sequential Addressing
Sequence (decimal)
Interleave Addressing
Sequence (decimal)
0 0,1 0,1
1 1,0 1,0
(Burst of Four)
Starting Address
(column address A1-A0, binary)
Sequential Addressing
Sequence (decimal)
Interleave Addressing
Sequence (decimal)
00 0,1,2,3 0,1,2,3
01 1,2,3,0 1,0,3,2
10 2,3,0,1 2,3,0,1
11 3,0,1,2 3,2,1,0
(Burst of Eight)
Starting Address
(column address A2-A0, binary)
Sequential Addressing
Sequence (decimal)
Interleave Addressing
Sequence (decimal)
000 0,1,2,3,4,5,6,7 0,1,2,3,4,5,6,7
001 1,2,3,4,5,6,7,0 1,0,3,2,5,4,7,6
010 2,3,4,5,6,7,0,1 2,3,0,1,6,7,4,5
011 3,4,5,6,7,0,1,2 3,2,1,0,7,6,5,4
100 4,5,6,7,0,1,2,3 4,5,6,7,0,1,2,3
101 5,6,7,0,1,2,3,4 5,4,7,6,1,0,3,2
110 6,7,0,1,2,3,4,5 6,7,4,5,2,3,0,1
111 7,0,1,2,3,4,5,6 7,6,5,4,3,2,1,0
Full page burst is an extension of the above tables of Sequential Addressing, with the length being 256 for 2Mx16 divice.
POWER UP SEQUENCE
1.Apply power and start clock, attempt to maintain CKE= “H”, L(U)DQM = “H” and the other pin are NOP condition at the inputs.
2.Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3.Issue precharge commands for all banks of the devices.
4.Issue 2 or more auto-refresh commands.
5.Issue mode register set command to initialize the mode register.
Cf.)Sequence of 4 & 5 is regardless of the order.
The device is now ready for normal operation.
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 9/29
SIMPLIFIED TRUTH TABLE
COMMAND CKEn-1 CKEn CS RAS CAS WE DQM BA A10/AP A11
A9~A0 Note
Register Mode Register Set H X L L L L X OP CODE 1,2
Auto Refresh H 3
Entry H L L L L H X X 3
L H H H 3
Refresh Self Refresh Exit L H H X X X X X
3
Bank Active & Row Addr. H X L L H H X V Row Address
Auto Precharge Disable L 4
Read &
Column Address Auto Precharge Enable
H X L H L H X V
H
Column
Address
(A0~A7) 4,5
Auto Precharge Disable L 4
Write & Column
Address Auto Precharge Enable
H X L H L L X V
H
Column
Address
(A0~A7) 4,5
Burst Stop H X L H H L X X 6
Bank Selection V L 4
Precharge Both Banks H X L L H L X
X H X 4
H X X X
Entry H L L V V V X
Clock Suspend or
Active Power Down Exit L H X X X X X
X
H X X X
Entry H L L H H H X
H X X X
Precharge Power Down Mode
Exit L H L V V V X
X
DQM H X V X 7
H H X X X
No Operation Command H X L H H H
X X
(V= Valid, X= Don’t Care, H= Logic High , L = Logic Low)
Note:
1. OP Code: Operation Code
A0~ A11, BA: Program keys.(@MRS)
2. MRS can be issued only at both banks precharge state.
A new command can be issued after 2 clock cycle of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by “Auto”.
Auto / self refresh can be issued only at both banks idle state.
4. BA: Bank select address.
If “Low”: at read, write, row active and precharge, bank A is selected.
If “High”: at read, write, row active and precharge, bank B is selected.
If A10/AP is “High” at row precharge, BA ignored and both banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read /write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK masks the data-in at the very CLK (Write DQM latency is 0), but
makes
Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 10/29
Single Bit Read-Write-Read Cycle (Same Page) @CAS Latency=3, Burst Length=1
: D o n ' t C a r e
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK
CKE
CS
RAS
CAS
ADDR
WE
DQ
DQM
A10/AP
tCH
tCL
tCC
Row Active
BA
*Note1
HIGH
tRCD
tSS
tSS
tSH
tSH
tSS
tSH
tSS
tSS
tSH
tSS
tSS
tSH
Ra Ca Cb Cc Rb
BS
BSBS
BS
BSBS
Ra
Qa Db Qc
Rb
Read Write Read
Precharge
Row Active
tRC
tRAS
tRP
tCCD
tRAC
*Note2 *Note2,3 *Note4 *Note2
*Note2,3
*Note 3 *Note 3
*Note2,3
tSH
tSLZ
tSAC
tOH
tSH
tSHtSS
*Note4*Note 3
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 11/29
*Note: 1. All inputs expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA.
BA Active & Read/Write
0 Bank A
1 Bank B
3.Enable and disable auto precharge function are controlled by A10/AP in read/write command.
A10/AP BA Operation
0 Disable auto precharge, leave bank A active at end of burst. 0
1 Disable auto precharge, leave bank B active at end of burst.
0 Enable auto precharge, precharge bank A at end of burst. 1
1 Enable auto precharge, precharge bank B at end of burst.
4.A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP BA precharge
0 0 Bank A
0 1 Bank B
1 X Both Banks
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 12/29
Power Up Sequence
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK
CKE
ADDR
DQ
DQM
A10/AP
tRP
Key RAa
RAa
Precharge
All Banks
Auto Refresh Auto Refresh Mode Register Set
(A-Bank)
Row Active
: Don't care
tRC tRC
High level is necessary
High level is necessary
BA
High-Z
CS
RAS
CAS
WE
Key
Key
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 13/29
Read & Write Cycle at Same Bank @Burst Length = 4
t
RCD
t
RC
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK
CKE
CS
RAS
CAS
ADDR
DQM
BA
CL=2
CL=3
Ra Rb Cb0
t
OH
t
SAC
t
SHZ
t
SHZ
t
RDL
Read
(A-Bank)
Row Active Precharge
(A-Bank)
Precharge
(A-Bank) (A-Bank)
Write
(A-Bank)
Row Active
(A-Bank)
*Note3
*Note3
*Note4
*Note4
:Don'tcare
*Note1
Qa0 Qa1 Qa2 Qa3 Db0 Db3
Db1 Db2
Qa0 Qa1 Qa2 Qa3 Db0 Db3
Db1 Db2
t
RAC
t
RAC
t
RDL
Ca0
A10/AP
Ra Rb
HIGH
*Note2
WE
t
OH
t
SAC
QC
*Note: 1.Minimum row cycle times is required to complete internal DRAM operation.
2.Row precharge can interrupt burst on any cycle. [CAS Latency-1] number of valid output data is available after Row
precharge. Last valid output will be Hi-Z(tSHZ) after the clock.
3.Access time from Row active command. tcc*(tRCD +CAS latency-1)+tSAC
4.Ouput will be Hi-Z after the end of burst.(1,2,4,8 bit burst)
Burst can’t end in Full Page Mode.
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 14/29
Page Read & Write Cycle at Same Bank @ Burst Length=4
*Note :1.To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus
contention.
2.Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written.
3.DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst.
Input data after Row precharge cycle will be masked internally.
CLOCK
CKE
CS
RAS
CAS
BA
ADDR
A10/AP
CL=2
CL=3
WE
DQM
HIGH
tRCD
*Note2
Ra Ca0 Cb0 Cc0 Cd0
Ra
Qa0 Qa1 Qb0 Qb1 Qb2 Dc0 Dc1 Dd0 Dd1
Qa0 Qa1 Qb0 Qb1 Dc0 Dc1 Dd0 Dd2
tCDL
*Note1
Row Active
(A-Bank)
Read
(A-Bank)
Read
(A-Bank)
Write
(A-Bank)
Write
(A-Bank)
Precharge
(A-Bank)
: Don't care
DQ
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
tRDL
*Note3
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 15/29
Page Read Cycle at Different Bank @ Burst Length=4
*Note: 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going dege.
2.To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
CLOCK
CKE
CS
RAS
CAS
BA
ADDR
A10/AP
CL=2
CL=3
WE
DQM
HIGH
*Note2
RAa CAa RBb
RAa
Read
(A-Bank)
Row Active
Row Active
(B-Bank)
(A-Bank)
Read
(A-Bank)
Read
(B-Bank)
Read
(A-Bank)
Read
(B-Bank)
Precharge
(A-Bank)
: Don't care
DQ
CBb CAc CBd CAe
QAa0
*Note1
RBb
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
QAa1 QAa2 QAa3 QBb0 QBb1 QBb2 QBb3 QAc0 QAc1 QBd0 QBd1 QAe0 QAe1
QAa0 QAa1 QAa2 QAa3 QBb0 QBb1 QBb2 QBb3 QAc0
QAc1 QBd0 QBd1 QAe0 QAe1
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 16/29
Page Write Cycle at Different Bank @Burst Length = 4
*Note: 1.To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2.To interrupt burst write by row precharge, both the write and the precharge banks must be the same.
CLOCK
CKE
CS
RAS
CAS
BA
ADDR
A10/AP
WE
DQM
HIGH
Row Active
(A-Bank) Row Active
(B-Bank)
Write
(A-Bank)
Precharge
(Both Banks)
: Don't care
DQ
Write
(A-Bank) Write
(B-Bank)
Write
(B-Bank)
DAa0 DAa1 DAa2 DAa3 DBb0 DBb1 DBb2 DBb3 DAc0 DAc1 DBd0 DBd1
RAa RBb
RAa CAa RBb CBb CAc CBd
*Note2
tCDL tRDL
*Note1
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 17/29
Read & Write Cycle at Different Bank @ Burst Length = 4
*Note: 1.tCDL should be met to complete write.
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 18/29
Read & Write Cycle with auto Precharge @ Burst Length =4
*Note: 1.tCDL Should be controlled to meet minimum tRAS before internal precharge start
(In the case of Burst Length=1 & 2 and BRSW mode)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK
CKE
CAS
ADDR
WE
DQ
DQM
A10/AP
BA
CL=2
CL=3
Row Active
( A - Bank )
Row Active
( B - Bank )
Read with
Auto Precharge
( A - Bank )
Auto Precharge
Start Point
(B-Bank)
: D o n ' t C a r e
Qa1 Qa2 Qa3 Db1 Db2 Db3
Db0Qa0
Ra
Cb
Ra CaRb
Rb
Qa1 Qa2 Qa3 Db1 Db2 Db3
Db0
Qa0
W rite with
Auto Precharge
(B-Bank)
HIGH
Auto Precharge
Start Point
( A - Bank)
CS
RAS
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 19/29
Clock Suspension & DQM Operation Cycle @CAS Latency=2, Burst Length=4
*Note:1.DQM is needed to prevent bus contention.
CLOCK
CKE
ADDR
DQ
DQM
A10/AP
Ra Ca Cb Cc
Ra
Qa0 Qa1 Qa2 Qa3
tSHZ
Qb1
Qb0
tSHZ
Dc0 Dc2
*Note1
Row Active Read Clock
Suspension Read
Read DQM Write
Write
DQM
Clock
Suspension
Write
DQM
:Don't Care
BA
CS
RAS
CAS
WE
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 20/29
Read Interrupted by Precharge Command & Read Burst Stop Cycle @Burst Length =Full page
*Note: 1.Burst can’t end in full page mode, so auto precharge can’t issue.
2.About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the label 1,2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycle”.
3.Burst stop is valid at every burst length.
CLOCK
CKE
ADDR
DQ
DQM
A10/AP
BA
RAa CAa CAb
RAa
QAa0 QAa1 QAb1
QAb0 QAb2
*Note1
Row Active
(A-Bank)
Read
(A-Bank)
Burst Stop Read
(A-Bank)
:Don't Care
HIGH
CL=2
CL=3
QAa2 QAa3 QAa4 QAb3 QAb4 QAb5
QAa0 QAa1 QAb1
QAb0 QAb2
QAa2 QAa3 QAa4 QAb3 QAb4 QAb5
11
22
Precharge
(A-Bank)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CS
RAS
CAS
WE
*Note2
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 21/29
Write Interrupted by Precharge Command & Write Burst stop Cycle @ Burst Length =Full page
*Note: 1. Burst can’t end in full page mode, so auto precharge can’t issue.
2.Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by
AC parameter of tRDL.
DQM at write interrupted by precharge command is needed to prevent invalid write.
Input data after Row precharge cycle will be masked internally.
3.Burst stop is valid at every burst length.
CLOCK
CKE
ADDR
DQ
DQM
A10/AP
RAa CAa CAb
RAa
DAa0 DAa1 DAb1DAb0 DAb2
Row Active
(A-Bank)
Write
(A-Bank)
Burst Stop Write
(A-Bank)
:Don't Care
HIGH
DAa2 DAa3 DAa4 DAb3 DAb4 DAb5
Precharge
(A-Bank)
tBDL tRDL
*Note2
CS
RAS
CAS
WE
BA
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 22/29
Burst Read Single bit Write Cycle @Burst Length=2
*Note:1.BRSW modes is enabled by setting A9 “High” at MRS(Mode Register Set).
At the BRSW Mode, the burst length at write is fixed to “1” regardless of programmed burst length.
2.When BRSW write command with auto precharge is executed, keep it in mind that tRAS should not be violated.
Auto precharge is executed at the next cycle of burst-end, so in the case of BRSW write command, the precharge
command will be issued after two clock cycles.
CLOCK
CKE
ADDR
CL=2
DQM
A10/AP
BA
RAa RAc
RAa
QAb0
Row Active
(A-Bank)
Write
(A-Bank)
:Don't Care
HIGH
QAb1
Precharge
(A-Bank)
CAa RBb CAb CBc CAd
RAc
DBc0
DQ
DAa0 QAb0 DBc0
QAb1
CL=3
Row Active
(B-Bank)
Row Active
(A-Bank)
Write with
Auto Precharge
(B-Bank)
Read
(A-Bank)
DAa0 QAd0 QAd1
QAd0 QAd1
*Note1
CS
RAS
CAS
WE
RBb
*Note2
Read with
Auto Precharge
(A-Bank)
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 23/29
Active/Precharge Power Down Mode @CAS Latency=2, Burst Length=4
*Note :1.Both banks should be in idle state prior to entering precharge power down mode.
2.CKE should be set high at least 1CLK+tss prior to Row active command.
3.Can not violate minimum refresh specification. (64ms)
CLOCK
CKE
ADDR
DQ
DQM
A10/AP
Active
Power-down
Exit
Precharge
: Don't care
*Note3
*Note2
*Note1
tSS
Ra
Ra
Qa0 Qa1 Qa2
tSHZ
Precharge
Power-Down
Entry Prech arge
Power-Down
Exit
Row Active
Active
Power-down
Entry
Read
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
Ca
BA
RAS
CAS
CS
WE
tSS tSS
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 24/29
Self Refresh Entry & Exit Cycle
*Note: TO ENTER SELF REFRESH MODE
1. CS , RAS & CAS with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.
3. The device remains in self refresh mode as long as CKE stays “Low”.
cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5. CS Starts from high.
6. Minimum tRC is required after CKE going high to complete self refresh exit.
7. 2K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if the system uses burst
refresh.
CLOCK
CKE
ADDR
DQ
DQM
A10/AP
Self Refresh Entry Auto Refresh
: Don't care
Self Refresh Exit
Hi-Z Hi-Z
WE
BA
CAS
RAS
CS
*Note2
*Note1
*Note4 tRCmin
*Note6
*Note5
*Note7
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
tSS
*Note3
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 25/29
Mode Register Set Cycle Auto Refresh Cycle
*Both banks precharge should be completed before Mode Register Set cycle and auto refresh cycle.
MODE REGISTER SET CYCLE
*Note: 1. CS , RAS , CAS & WE activation at the same clock cycle with address key will set internal mode register.
2.Minimum 2 clock cycles should be met before new RAS activation.
3.Please refer to Mode Register Set table.
CLOCK
CKE
ADDR Key
:Don't Care
HIGH
CS
RAS
CAS
HIGH
*Note3
Ra
*Note1
DQ Hi-Z
DQM
1 2 3 4 5 6 0 1 2 3 4 5 6 7 8 9 10
Hi-Z
*Note2 tRC
MRS New Command Auto Refresh New Command
WE
0
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 26/29
PACKING DIMENSIONS
54-LEAD TSOP(II) SDRAM (400mil) (1:3)
Symbol Dimension in mm Dimension in inch
Min Norm Max Min Norm Max
A
1.20 0.047
A1 0.05 0.10 0.15 0.002 0.004 0.006
A2 0.95 1.00 1.05 0.037 0.039 0.041
b 0.25
0.45 0.010 0.018
b1 0.25 0.35 0.40 0.010 0.014 0.016
c 0.12
0.21 0.005 0.008
c1 0.10 0.127 0.16 0.004 0.005 0.006
D 22.22 BSC 0.875 BSC
E 11.76 BSC 0.463 BSC
E1 10.16 BSC 0.400 BSC
L 0.40 0.50 0.60 0.016 0.020 0.024
L1 0.80 REF 0.031 REF
e 0.80 BSC 0.031 BSC
Θ 0° 10° 0° 10°
O
L
DETAIL "A"
SECTION B-B
B
B
0.10
-C-
D
E
E1
e
PLANE
SEATING
1
L
127
28
54 A2
A
-H-
b
DETAIL A
-C-
IDENTIFIER
-C-
SEE
b
b
c
c
1
1
0.665 REF
0.21 REF
A1
PIN1
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 27/29
PACKING DIMENSIONS
54-BALL SDRAM ( 8x8 mm )
Symbol Dimension in mm Dimension in inch
Min Norm Max Min Norm Max
A
1.00
0.039
A1 0.20 0.25 0.30 0.008 0.010 0.012
A2 0.61 0.66 0.71 0.024 0.026 0.028
Φb 0.30 0.35 0.40 0.012 0.014 0.016
D 7.90 8.00 8.10 0.311 0.315 0.319
E 7.90 8.00 8.10 0.311 0.315 0.319
D1
6.40
0.252
E1
6.40
0.252
e
0.80
0.031
Controlling dimension : Millimeter.
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 28/29
Revision History
Revision Date Description
0.1 2006.08.11 Original
0.2 2007.03.20 Add BGA package
0.3 2007.04.27
Rename BGA pin name (BA1 to NC; BA0 to BA)
Modify DC Characteristics
0.4 2007.09.28 add speed –5 sepc.
1.0 2007.10.08 Delete “Preliminary”
1.1 2008.08.19
1. Move Revision History to the last
2. Add -6 spec
ESMT
M12L32162A
Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2008
Revision : 1.1 29/29
Important Notice
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any means without the prior permission of ESMT.
The contents contained in this document are believed to be accurate at the
time of publication. ESMT assumes no responsibility for any error in this
document, and reserves the right to change the products or specification in
this document without notice.
The information contained herein is presented only as a guide or examples
for the application of our products. No responsibility is assumed by ESMT for
any infringement of patents, copyrights, or other intellectual property rights of
third parties which may result from its use. No license, either express ,
implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of ESMT or others.
Any semiconductor devices may have inherently a certain rate of failure. To
minimize risks associated with customer's application, adequate design and
operating safeguards against injury, damage, or loss from such failure,
should be provided by the customer when making application designs.
ESMT's products are not authorized for use in critical applications such as,
but not limited to, life support devices or system, where failure or abnormal
operation may directly affect human lives or cause physical injury or property
damage. If products described here are to be used for such kinds of
application, purchaser must do its own quality assurance testing appropriate
to such applications.
