IXFA16N50P IXFP16N50P IXFH16N50P Polar TM HiPerFETTM Power MOSFET VDSS ID25 = 500V = 16A 400m RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 16 A IDM TC = 25C, Pulse Width Limited by TJM 35 A IA TC = 25C 16 A EAS TC = 25C 750 mJ dv/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 300 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 C C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 TO-220 (IXFP) G D S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 500 VGS(th) VDS = VGS, ID = 2.5mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 V 5.5 V 100 nA TJ = 125C 15 A 250 A Applications 400 m (c) 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS99357H(6/18) IXFA16N50P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs 9 VDS = 20V, ID = 0.5 * ID25, Note 1 16 Ciss Coss pF 237 pF 18 pF 23 ns 25 ns 70 ns 22 ns 36 nC 16 nC 12 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 0.42 C/W RthJC RthCS S 2480 VGS = 0V, VDS = 25V, f = 1MHz IXFP16N50P IXFH16N50P TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 16 A ISM Repetitive, pulse Width Limited by TJM 64 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 16A, -di/dt = 100A/s 600 6 200 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA16N50P o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Output Characteristics @ TJ = 125 C 20 20 VGS = 10V 8V 7V VGS = 10V 8V 15 15 7V I D - Amperes I D - Amperes IXFP16N50P IXFH16N50P 10 5 10 6V 5 6V 5V 0 0 0 1 2 3 4 5 6 7 8 9 0 2 4 6 Fig. 3. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature 3.2 10 12 14 16 2.6 R DS(on) - Normalized RDS(on) - Normalized I D = 16A 2.0 I D = 8A 1.6 1.2 18 20 o TJ = 125 C 2.2 2.0 1.8 1.6 1.4 o TJ = 25 C 1.2 0.8 1.0 0.8 0.4 -50 -25 0 25 50 75 100 125 0 150 2 4 6 8 10 12 14 16 I D - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 18 20 16 18 14 16 14 12 I D - Amperes I D - Amperes 20 VGS = 10V 2.4 2.4 18 Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Drain Current 2.8 VGS = 10V 2.8 8 VDS - Volts VDS - Volts 10 8 6 o TJ = 125 C 12 o 25 C o - 40 C 10 8 6 4 4 2 2 0 0 -50 -25 0 25 50 75 TJ - Degrees Centigrade (c) 2018 IXYS CORPORATION, All Rights Reserved 100 125 150 4.0 4.4 4.8 5.2 5.6 VGS - Volts 6.0 6.4 6.8 7.2 IXFA16N50P IXFP16N50P IXFH16N50P Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 70 28 o TJ = - 40 C 60 24 50 o 25 C I S - Amperes g f s - Siemens 20 16 o 125 C 12 40 30 o TJ = 125 C 20 8 o TJ = 25 C 10 4 0 0 0 2 4 6 8 10 12 14 16 18 0.3 20 0.4 0.5 I D - Amperes 0.7 0.8 0.9 1 1.1 1.2 VSD - Volts Fig. 10. Capacitance Fig. 9. Gate Charge 10,000 10 VDS = 250V 9 Capacitance - PicoFarads I D = 8A 8 I G = 10mA 7 VGS - Volts 0.6 6 5 4 3 Ciss 1,000 100 Coss 10 Crss 2 1 f = 1 MHz 1 0 0 5 10 15 20 25 30 35 40 0 45 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 100 1 Z(th)JC - K / W I D - Amperes RDS(on) Limit 25s 10 100s 1ms o TJ = 150 C o TC = 25 C Single Pulse DC 10ms 1 10 0.1 100 1000 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_16N50P (5J) 12-22-08-G IXFA16N50P TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source (c) 2018 IXYS CORPORATION, All Rights Reserved IXFP16N50P IXFH16N50P Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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