© 2018 IXYS CORPORATION, All Rights Reserved DS99357H(6/18)
N-Channel Enhancement Mode
Avalanche Rated
IXFA16N50P
IXFP16N50P
IXFH16N50P
VDSS = 500V
ID25 = 16A
RDS(on)
400m
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 500 V
VGS(th) VDS = VGS, ID = 2.5mA 3.0 5.5 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 15 A
TJ = 125C 250 A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 400 m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 500 V
VDGR TJ= 25C to 150C, RGS = 1M500 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C16A
IDM TC= 25C, Pulse Width Limited by TJM 35 A
IATC= 25C16A
EAS TC= 25C 750 mJ
dv/dt IS IDM, VDD VDSS, TJ 150°C 10 V/ns
PDTC= 25C 300 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
MdMounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
TO-247 6.0 g
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
SD (Tab)
D
G
S
D (Tab)
TO-220 (IXFP)
TO-263 (IXFA)
D (Tab)
S
GD
Polar TM HiPerFETTM
Power MOSFET
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA16N50P IXFP16N50P
IXFH16N50P
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 16 A
ISM Repetitive, pulse Width Limited by TJM 64 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 200 ns
QRM 600 nC
IRM 6 A
IF = 16A, -di/dt = 100A/μs
VR = 100V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 9 16 S
Ciss 2480 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 237 pF
Crss 18 pF
td(on) 23 ns
tr 25 ns
td(off) 70 ns
tf 22 ns
Qg(on) 36 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 16 nC
Qgd 12 nC
RthJC 0.42 C/W
RthCS TO-220 0.50 C/W
TO-247 0.21 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA16N50P IXFP16N50P
IXFH16N50P
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
5
10
15
20
0123456789
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6V
7V
Fig. 2. Output Characteristics @ T
J
= 125
o
C
0
5
10
15
20
0 2 4 6 8 101214161820
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 3. R
DS(on)
Normalized to I
D
= 8A Value
vs. Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 16A
I
D
= 8A
Fig. 4. R
DS(on)
Normalized to I
D
= 8A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0 2 4 6 8 101214161820
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 6. Input Admittance
0
2
4
6
8
10
12
14
16
18
20
4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 5. Maximum Drain Current vs. Case Temperature
0
2
4
6
8
10
12
14
16
18
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA16N50P IXFP16N50P
IXFH16N50P
Fig. 7. Transconductance
0
4
8
12
16
20
24
28
0 2 4 6 8 101214161820
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
25
o
C
125
o
C
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 8A
I
G
= 10mA
Fig. 10. Capacitance
1
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 11. Forward-Bias Safe Operating Area
1
10
100
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
25μs
1ms
100μs
R
DS(on)
Limit
10ms
DC
Fig. 12. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
IXYS REF: F_16N50P (5J) 12-22-08-G
© 2018 IXYS CORPORATION, All Rights Reserved
TO-263 Outline
TO-220 Outline
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
1 - Gate
2,4 - Drain
3 - Source
1 - Gate
2,4 - Drain
3 - Source
IXFA16N50P IXFP16N50P
IXFH16N50P
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
