BAS 125W Silicon Schottky Diodes * For low-loss, fast-recovery, meter protection, 3 bias isolation and clamping applications * Integrated diffused guard ring * Low forward voltage 2 1 BAS 125W 1 3 BAS 125-04W BAS 125-05W BAS 125-06W 3 3 3 1 2 1 2 EHA07005 EHA07002 1 VSO05561 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAS 125W 13s 1=A 2 n.c. 3=C SOT-323 BAS 125-04W 14s 1 = A1 2 = C2 3 = C1/A2 SOT-323 BAS 125-05W 15s 1 = A1 2 = A2 3 = C1/2 SOT-323 BAS 125-06W 16s 1 = C1 2 = C2 3 = A1/2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 25 V Forward current IF 100 mA Surge forward current (t< 100s) IFSM 500 Total power dissipation BAS 125W, TS = 93 C Ptot 250 BAS 125-04W, -05W, -06W Ptot 250 Junction temperature Tj 150 Operating temperature range Top -55 ... 150 Storage temperature Tstg -55 ... 150 Junction - ambient 1) BAS 125W RthJA 310 Junction - ambient 1) BAS 125-04W ... RthJA 425 Junction - soldering point BAS 125W RthJS 230 Junction - soldering point BAS 125-04W ... RthJS 265 , TS = 84 C Value Unit mW C Thermal Resistance K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu 1 Oct-19-1999 BAS 125W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current nA IR VR = 20 V - - 100 VR = 25 V - - 150 Forward voltage mV VF IF = 1 mA - 385 400 IF = 10 mA - 530 650 IF = 35 mA - 800 950 CT - - 1.1 pF Rf - 16 - AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz 2 Oct-19-1999 BAS 125W Forward current IF = f (TA *;TS ) * Package mounted on epoxy BAS 125W 100 mA 80 TS IF 70 TA 60 50 40 30 20 10 0 0 20 40 60 80 100 120 C 150 TA,TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load BAS 125W IFmax / IFDC = f (t p) BAS 125W 10 2 10 3 IFmax / IFDC RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Oct-19-1999 BAS 125W Forward current IF = f (TA *;TS ) * Package mounted on epoxy BAS 125-04W ... (IF per diode) 100 mA 80 TS IF 70 60 TA 50 40 30 20 10 0 0 20 40 60 80 100 120 C 150 TA,TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load BAS 125-04W ... IFmax / IFDC = f (tp) BAS 125-04W ... 10 2 10 3 IFmax / IFDC RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Oct-19-1999 BAS 125W Forward current IF = f (VF ) Diode capacitance CT = f (VR) TA = Parameter f = 1MHz 10 2 F BAS 125... EHD07115 1.0 CT mA BAS 125... EHD07117 pF 0.8 10 1 TA = -40C 25 C 85 C 150 C 10 0 0.6 0.4 10 -1 0.2 10 -2 0.0 0.5 V 0.0 1.0 10 0 VF Differential forward resistance rf = f (IF) f = 10 kHz TA = Parameter R BAS 125... EHD07116 10 4 rf TA = 125 C A 20 VR Reverse current IR = f (VR ) 10 1 V 10 0 BAS 125... EHD07118 10 3 TA = 85 C 10 -1 10 2 10 -2 10 -3 10 1 TA = 25 C 0 10 V 10 0 10 -2 20 10 -1 10 0 10 1 mA 10 2 F VR 5 Oct-19-1999