2N7000 - Diotec Semiconductor - Datasheet.Directory

2N7000

NN-Channel Enhancement Mode Field Effect Transistor

N-Kanal Feldeffekt Transistor – Anreicherungstyp N

Version 2011-02-16

Dimensions - Maße [mm]

Power dissipation

Verlustleistung

350 mW

Plastic case

Kunststoffgehäuse

TO-92

(10D3)

Weight approx.

Gewicht ca.

0.18 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)

2N7000

Drain-Source-voltage – Drain-Source-Spannung VDSS 60 V

Drain-Gate-voltage – Drain-Gate-Spannung RGS ≤ 1 MΩ VDGR 60 V

Gate-Source-voltage – Gate-Source-Spannung dc

tp < 50 µs

VGSS

± 20 V

± 40 V

Power dissipation – Verlustleistung Ptot 350 mW

Drain current continuos – Drainstrom (dc)

Peak Drain current – Drain-Spitzenstrom

IDM

200 mA

500 mA

Operating Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

150°C

-55…+150°C

2 x 2.54

SG D

2N7000

Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)

Min. Typ. Max.

Drain-Source breakdown voltage – Drain-Source Durchbruchspannung

ID = 10 µA V(BR)DSS 60 V

Drain-Source leakage current – Drain-Source Leckstrom G short

VDS = 48 V

VDS = 48 V, Tj = 125°C

IDSS

1 µA

1 mA

Gate-Body leakage current – Gate-Substrat Leckstrom

VGS = ±15 V ±IGSS 10 nA

Gate-Threshold voltage – Gate-Source Schwellspannung

VGS = VDS, ID = 1 mA VGS(th) 0.8 V 3 V

Drain-Source on-voltage – Drain-Source-Spannung

VGS = 10 V, ID = 500 mA

VGS = 4.5 V, ID = 75 mA

VDS(on) 2.5 V

0.45 V

Drain-Source on-state resistance – Drain-Source Einschaltwiderstand

VGS = 10 V, ID = 500 mA

VGS = 4.5 V, ID = 75 mA

RDS(on)

5 Ω

6 Ω

Forward Transconductance – Übertragungssteilheit

VDS = 10 V, ID = 200 mA

gFS 100 mS

Input Capacitance – Eingangskapazität

VDS = 25 V, f = 1 MHz Ciss 60 pF

Output Capacitance – Ausgangskapazität

VDS = 25 V, f = 1 MHz Coss 25 pF

Reverse Transfer Capacitance – Rückwirkungskapazität

VDS = 25 V, f = 1 MHz Crss 5 pF

Turn-On Delay Time – Einschaltverzögerung

VDD= 15 V, RL= 30 Ω, ID= 0.5 A, VGS= 10 V, RG= 25 Ω ton 10 ns

Turn-Off Delay Time – Ausschaltverzögerung

VDD= 15 V, RL= 30 Ω, ID= 0.5 A, VGS= 10 V, RG= 25 Ω toff 10 ns

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft RthA < 357 K/W 1)

1 Device mounted on standard PCB material

Bauteil montiert auf Standard-Leiterplattenmaterial