EMH1402 Ordering number : EN8723 N-Channel Silicon MOSFET EMH1402 General-Purpose Switching Device Applications Features * * Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS 20 V 6 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW10s, duty cycle1% 24 A Mounted on a ceramic board (1200mm20.8mm) 1.5 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ Unit max ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=16V, VDS=0V 30 VDS=10V, ID=1mA VDS=10V, ID=3A 1.2 Forward Transfer Admittance VGS(off) yfs RDS(on)1 RDS(on)2 ID=3A, VGS=10V ID=1.5A, VGS=4.5V 21 28 Static Drain-to-Source On-State Resistance 35 49 m ID=1.5A, VGS=4V VDS=10V, f=1MHz 41 58 m Input Capacitance RDS(on)3 Ciss 740 pF Output Capacitance Coss 140 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz 120 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 11.0 ns See specified Test Circuit. 50 ns td(off) tf See specified Test Circuit. 62 ns See specified Test Circuit. 45 ns Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Rise Time Turn-OFF Delay Time Fall Time V(BR)DSS Conditions IDSS IGSS V 1 10 2.9 Marking : KB 2.6 4.9 A A V S m Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N3005PA MS IM TB-00001824 No.8723-1/4 EMH1402 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=10V, VGS=10V, ID=6A 14.5 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=6A 2.3 nC Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=6A Diode Forward Voltage VSD IS=6A, VGS=0V Package Dimensions unit : mm 7045-001 8 7 6 1 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 2.1 0.2 4 0.5 V 5 0.125 5 1.7 8 nC 1.2 Electrical Connection 0.2 0.2 2.6 0.83 2.0 1 0.05 0.75 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 2 3 Top view 4 SANYO : EMH8 Switching Time Test Circuit VDD=15V VIN 10V 0V ID=3A RL=5 VIN D VOUT PW=10s D.C.1% G EMH1402 50 ID -- VDS 9 8 3 2 VGS=2.5V 7 6 5 4 3 2 1 25 1 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT10421 C --25C 3.0V 5C Drain Current, ID -- A 15.0V 4 VDS=10V 6.0V 5 ID -- VGS 10 4.5V 4.0 V 10.0V 6 Drain Current, ID -- A S Ta= 7 P.G 0 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage, VGS -- V 3.5 4.0 IT10422 No.8723-2/4 EMH1402 RDS(on) -- VGS Ta=25C 3A 80 ID=1.5A 70 60 50 40 30 20 10 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V , 1.5A I D= 40 =4.0 VGS V =4.5 VGS .5A, I D=1 30 10.0V , V GS= 20 A I D=3.0 10 --40 --20 0 20 40 60 80 100 120 140 160 IT10424 IS -- VSD VGS=0V 3 --2 C 75 7 25 5 C 3 3 2 --25 C = Ta 1.0 1.0 7 5 25 C C 5 5 C 2 2 Ta= 7 3 Source Current, IS -- A Forward Transfer Admittance, yfs -- S V 50 10 7 5 0.1 7 5 3 2 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.01 0.3 5 7 10 IT10425 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 7 5 1.1 IT10426 Ciss, Coss, Crss -- VDS 3 VDD=15V VGS=10V f=1MHz 2 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 60 Ambient Temperature, Ta -- C 5 0.1 0.01 td(off) 100 7 5 tf 3 2 td(on) 10 7 5 tr 3 2 0.01 5 3 2 Coss 3 5 7 0.1 2 3 5 7 1.0 2 3 0 5 7 10 Drain Current, ID -- A 6 5 4 3 10 7 5 3 2 0 12 Total Gate Charge, Qg -- nC 14 16 IT10429 DC 30 IT10428 <10s 10 0 1m s s 10 ms 10 op era 0m s tio n( Ta = Operation in this area is limited by RDS(on). 3 2 1 10 25 ID=6A 1.0 7 5 0.1 7 5 8 20 IDP=24A 3 2 2 6 15 ASO 3 2 4 10 Drain-to-Source Voltage, VDS -- V 5 7 2 5 IT10427 8 0 Crss 5 2 VDS=10V ID=6A 9 Ciss 7 7 VGS -- Qg 10 1000 100 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 16 VDS=10V 7 70 IT10423 yfs -- ID 10 80 0 --60 0 0 RDS(on) -- Ta 90 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 90 25 C ) Ta=25C Single pulse Mounted on a ceramic board (1200mm20.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS -- V 2 3 5 IT10430 No.8723-3/4 EMH1402 PD -- Ta 1.5 1.4 M ou ed nt 1.2 on am er ac 1.0 b ic 0.8 rd oa (1 0.6 20 2 m 0m 0.4 m 8m 0. 0.2 ) Allowable Power Dissipation, PD -- W 1.6 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT10431 Note on usage : Since the EMH1402 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice. PS No.8723-4/4