1791 PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 8 Power transistors for complementary AF stages The transistors BD 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase power transistors in a TO 126 plastic package (12 A 3 DIN 41869, sheet 4). The collector is electrically connected to the metallic mounting area. The transistors are particularly suitable for use in push-pull output stages, driver stages and for general AF applications. Their complementary types are the NPN transistors BD 433, BD 435, BD 437, BD 439, - 25C ) MM 4235605 0004368 3 MMSIEG 8236320 SIEMENS/ SPCL. SEMICONDS 0 rel Be ye T3349 BD 434 BD 436 BD 438 BD 440 BD 442 and BD 441, Type Ordering code BD 434 Q62702-D202 BD 434/BD 433 paired | Q62702-D217 BD 436 Q62702-D204 BD 436/B8D 435 paired | Q62702-D218 8D 438 Q62702-D213 ' ~ S BD 4380BD 437 paired | G62702-0219 Teed tal nt BD 440 Q62702-D281 ohne! BD 440/BD 439 paired | 062702-D284 O 242/80 441 ired oes) Oa eee Approx. weight 0.6 g Dimensions in mm pair - ; : Mica washer 062902-862 torque man OB Nin; washer or serine Spring washer A3 DIN137| Q62902-B63 eer BO ratee scesher (ungreased) Is used, the thermal resistance increases by 8 K/W and in case of a greased ona by 4 K/W. Maximum ratings BD 434 | BD 436 | BD 438 | 8D 440| BD 442 Collector-emitter voltage ~Veeo | 22 32 45 60 80 Vv Collector-emitter voltage Vces | 22 32 45 60 80 Vv Collector-base voltage Vego | 22 32 45 60 80 Vv Emitter-base voltage ~Vepo | 5 5 5 5 5 Vv Collector current le 4 4 4 4 4 A Collector peak current (t < 10 ms) -low =| 7 7 7 7 7 A Emitter peak current (t < 10 ms) ~ley | 7 7 7 7 7 A Base current ~Ig 1 1 1 1 1 A Junction temperature Tj 150 150 150 150 150 c Storage temperature range Tstg -55 to +150 C Total power dissipation (Tease 8 25C; Voge S12V) Prog | 36 36 36 36 36 Ww Thermal resistance Junction to ambien air Rihoa | $100 |s100 | $100 |s100 |<100 |K/W Junction to mounting area = Ring) $3,5 23,5 3,5 $3,5 $3,5 K/W 414 B-08 ee a ns _ 25 D M 8235b05 0004369 5 MESIE G. SIEMENS AKTIENGESELLSCHAF 262... 9: BD 434 BD 436 BD 438 BD 440 BD 442 Static characteristics (Tyas, = 25C) BD 434] BD 436! BD 438) BD 440 | BD 442 Collector-emitter breakdown , voltage (Jc = 100 mA) Vipriceo} > 22 >32 >45 >60 >80 |V Collector-emitter breakdown voltage (J = 100 pA) Visrices| > 22 >32 >45 >60 >80 Collector-base breakdown voltage (J, = 100 pA) Viericao| > 22 >32 >45 >60 >80 |V Emitter-base breakdown voltage (Je = 1 mA) Vierjieso| >5 >5 >5 >5 >5 Collector cutoff current . (-Veg = 22 V) Icgo <100 | - - - - pA Collector cutoff current (-Vog = 32 V) Icgo - <100 | - - - pA Collector cutoff current (-Veg = 45 V) Icgo - - <100 - - pA Collector cutoff current (Veg = 60 V) ~Icgo - ~ - <100 - pA Collector cutoff current (-Vcg =80V) Icga - - - - <100 pA Collector cutoff current (-Vog = 10 V: Tamb = 180C) lepe <1 <1 <1 <1 <1 mA Collector cutoff current (-Vep=Veemax: Tamb=150C) ~Jcgo <3 <3 <3 <3 <3 mA Base-emitter forward voltage (-Ig = 2A; Vee = 1 V) Vee <1.1 <1.1 <1.2 <1.5 <1.5 |V Base-emitter forward voltage (~lo = 3A; -Vce = 1 V) Vee - - <1.3 <1.6 <1.6 |V Collector-emitter saturation voltage (Jg = 2 Aj") Veesat | <0.8 | 40 >40 >30 >20 >15 - (~Ig=600 mA;Vee=1V)?) hee >85 |>85 |>85 |>40 >40 | - (-Ig = 2A; -Vee = 1 V) hee >50 >60 >40 >26 >15 - 1) For the characteristics which passes through the point Jc = 2.2 mA and VCE = 1 V at constant base current. 2) Available as matching pairs with BD 433, BD 435, 8D 437, BD 439, and BD 441. Condition for matching pairs hfe1/hFe2 4 1.41. 1792 B-09 eS 415 MD aie weeds atanta | tage Near owe se AM AEN da adh feat oe apes a a a ~~ = esc Db - 25C 04370 SIEMENS AKTIENGESELLSCHAF Dynamic characteristics (T,g5, = 25C) mm 8235405 0004370 1 MESIEG 4 93-/F - 5 BD 434 BD 436 BD 438 BD 440 BD 442 | BD 434| Bp 436| BD 438| BD 440| BD 442| Transition frequency (-I = 0,25 A; Veg =1V; f =1MHz) fr >3 >3 Cutoff frequency in common emitter configuration (-Ig = 0.25 A; -Vee=1V) fate | >20 >20 Total perm. power dissipation versus temperature Prot = f (Tease) Vee = 0 to 12 V BD 434, BD 436, 8D 438, W BD 440, BD 442 Upp 20 to 12V 0 50 {00 150C lay 416 eee 1793 B-10 Ta >3 >3 >3 MHz >20 >20 >20 kHz Permissible putse load fic = f (0; V = parameter BD 434, BD 436, 8D 438, K W BD 440, BD 442 10 Fine sR oe staan ay ee 0 25C D MM B235b05 0004371 3 MESIEG 7 35-/P Permissible operating range _BD 434 . . BD 436 SIEMENS AKTIENGESELLSCHAF ; 04371 0-gpa43g BD 440 BD 442 Permissible operating range Permissible operating range Tq = # (Vee): Tease = 25C, v =O To = f (Vee): Tease = 26C, v =O A BD 434, BD 436, BD 438 A BD 440, BD 442 10? ie +t lt 10! io 10 0 107 ot 199 10! t02v 10 10! vy ee Vee Collector cutoff current OC current gain hire = f (7c) versus temperature Jogo = f (Tease Vee = 1V: Tossa = parameter -Veg = Veemax BD 434, BD 436, BD 438, BD 434, BD 436, 8D 438, BD 440, BD 442 mA BD 440, BD 442 hee -hag Limit valus 10 0! 10? 103 toma 0 50 100 150C P,, wlheass 417 1794 B-11 a saat doneiand ume Wm re Per tory Collector currant Io = fee} Veg =2 NV: Tease = 6C BD 434, BD 436, BD 438, mA BD 440, BD 442 0 05 1 45 a _- Vag Output characteristics Ic = f (Voge) 4g = parameter (common emitter configuration) BD 434, BD 436, BD 438, BOD 440, BD 442 np le 418 7s 1795 B-12 25C D mE 8235605 0004372 5 M@ESIEG T-BFSF _ 25C 04372 D BD 434 STEMENS AKTIENGESELLSCHAF BD 436 BD 438 BD 440 BD 442 Collector-emitter saturation voltage Veesat = f Uch: hee = 10 BD 434, BD 436, BD 438, mA BD 440, BD 442 0 05 Vv < Veesat Transition frequency FFU) Tease = 25 8D 434, 8D 436, BD 438, Miz BD 440, BD 442 30 20 10 10 iv 10 iA ah +? ney ang nO sie ot Nel sins uae os J mane comme Ye Waele nt be Mb Pata