MITSUBISHI IGBT MODULES CM150DY-24A HIGH POWER SWITCHING USE CM150DY-24A IC ................................................................... 150A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 23 17 23 C1 12 12 G1 E1 12 2-6.5 MOUNTING HOLES 4 13 48 20 (14) E2 18 C2E1 E2 G2 4 17 3-M5 NUTS 800.25 4 12.5 (SCREWING DEPTH) 7 16 E2 21.2 29 +1.0 -0.5 C2E1 LABEL C1 G1 E1 16 7.5 7 E2 G2 TAB #110. t=0.5 16 CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM150DY-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- -- (Tj = 25C, unless otherwise specified) Parameter ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG G-E Short C-E Short DC, TC = 81C*1 Pulse Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value Unit V V A A W C C Vrms N*m g (Tj = 25C, unless otherwise specified) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance (Note 2) Pulse TC = 25C*1 VCE = VCES, VGE = 0V Min. -- Limits Typ. -- Max. 1 IC = 15mA, VCE = 10V 6 7 8 V -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.1 -- 2.1 2.4 -- -- -- 675 -- -- -- -- -- 6.0 -- -- -- 0.022 -- 0.5 3.0 -- 23 2 0.45 -- 130 100 450 350 150 -- 3.8 0.13 0.23 -- 31 A Test conditions Parameter Thermal resistance Ratings 1200 20 150 300 150 300 960 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 VGE = VGES, VCE = 0V Tj = 25C Tj = 125C IC = 150A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 150A, VGE = 15V VCC = 600V, IC = 150A VGE = 15V RG = 2.1, Inductive load IE = 150A IE = 150A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound Applied (1/2 module)*1,*2 Unit mA V nF nC ns ns C V K/W *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. Feb. 2009 2 MITSUBISHI IGBT MODULES CM150DY-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 12 200 150 11 100 10 50 9 0 4 2 6 8 10 4 VGE = 15V 3 2 1 Tj = 25C Tj = 125C 0 0 50 100 150 200 250 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 7 8 6 IC = 300A 4 IC = 150A 2 IC = 60A 0 6 8 10 12 14 16 18 5 3 2 102 7 5 3 2 101 20 Tj = 25C Tj = 125C 0 1 2 3 4 5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 103 7 5 7 5 3 2 3 2 Cies 101 7 5 3 2 Coes 100 7 5 3 2 300 103 Tj = 25C EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25C 15 13 250 0 CAPACITANCE Cies, Coes, Cres (nF) VGE = 20V SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 td(off) 102 7 5 3 2 td(on) tr Conditions: VCC = 600V VGE = 15V RG = 2.1 Tj = 125C Inductive load 101 7 5 3 2 100 1 10 COLLECTOR-EMITTER VOLTAGE VCE (V) tf 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM150DY-24A TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c') (ratio) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 7 5 3 2 Irr 102 trr 7 5 3 2 101 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = 15V RG = 2.1 Tj = 25C Inductive load 2 3 5 7 103 IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.13K/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.23K/W -3 10 10-2 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 SWITCHING LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) 7 5 3 2 SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) Esw(off) 101 7 5 3 2 Esw(on) Conditions: VCC = 600V VGE = 15V RG = 2.1 Tj = 125C Inductive load C snubber at bus 100 7 5 3 2 2 3 5 7 102 2 3 5 3 2 Esw(off) 101 7 Esw(on) Conditions: VCC = 600V VGE = 15V IC = 150A Tj = 125C Inductive load C snubber at bus 5 3 2 100 0 10 5 7 103 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG () RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 102 7 Conditions: VCC = 600V 5 VGE = 15V 3 RG = 2.1 Tj = 125C 2 Inductive load C snubber at bus 101 Err 7 5 3 2 2 3 5 7 102 Conditions: VCC = 600V VGE = 15V IE = 150A Tj = 125C Inductive load C snubber at bus 7 RECOVERY LOSS (mJ/pulse) RECOVERY LOSS (mJ/pulse) 10-1 7 5 3 2 TIME (s) 7 5 3 2 100 1 10 2 10-1 EMITTER CURRENT IE (A) 102 10-1 1 10 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse 7 5 TC = 25C 3 Under the chip 2 3 5 3 2 101 7 3 2 100 0 10 5 7 103 Err 5 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG () EMITTER CURRENT IE (A) Feb. 2009 4 MITSUBISHI IGBT MODULES CM150DY-24A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 150A VCC = 400V 16 VCC = 600V 12 8 4 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Feb. 2009 5