Feb. 2009
1
C1
E2
C2E1
E2 G2
LABEL
3-M5 NUTS
2-φ6.5 MOUNTING HOLES
TAB #110. t=0.5
17
48
13
94
232317
29
+1.0
–0.5
21.2 7.5
16 7 16 7 16
80
±0.25
4184
12 12 12
E1G1
C2E1
E2
E2 G2G1 E1
C1
CIRCUIT DIAGRAM
4
12.5
(SCREWING DEPTH)
20
(14)
CM150DY-24A
APPLICATION
AC drive inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM150DY-24A
HIGH POWER SWITCHING USE
¡IC ...................................................................150A
¡VCES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
Feb. 2009
2
Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
External gate resistance
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 600V, IC = 150A, VGE = 15V
VCC = 600V, IC = 150A
VGE = ±15V
RG = 2.1Ω, Inductive load
IE = 150A
IE = 150A, VGE = 0V
IGBT part (1/2 module)*1
FWDi part (1/2 module)*1
Case to heat sink, Thermal compound Applied (1/2 module)
*1,*2
1200
±20
150
300
150
300
960
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
MITSUBISHI IGBT MODULES
CM150DY-24A
HIGH POWER SWITCHING USE
V
V
A
A
W
°C
°C
Vrms
N • m
g
1
0.5
3.0
—
23
2
0.45
—
130
100
450
350
150
—
3.8
0.13
0.23
—
31
mA
µA
nF
nC
ns
µC
V
K/W
Ω
—
—
2.1
2.4
—
—
—
675
—
—
—
—
—
6.0
—
—
—
0.022
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.1
7V
V
68
ns
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
RG
Symbol Parameter
VGE(th)
VCE(sat)
*1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips.
*2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
DC, TC = 81°C*1
Pulse (Note 2)
Pulse (Note 2)
TC = 25°C*1
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
—
—
—
Unit
Typ.
Limits
Min. Max.
Test conditions
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Thermal resistance
IC = 15mA, VCE = 10V
IC = 150A, VGE = 15V
VCE = 10V
VGE = 0V
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM150DY-24A
HIGH POWER SWITCHING USE
300
250
100
50
200
150
0046810
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
T
j
= 25°C
11
12
10
9
V
GE
=
20V
2
15
13
4
3
2
1
00 100 300200 250150
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
50
10
8
6
4
2
02012 146810 16 18
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
T
j
= 25°C
I
C
= 60A
10
1
2
3
5
7
10
2
2
3
5
7
10
3
012 435
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
T
j
= 25°C
T
j
= 125°C
10
–1
10
0
10
–1
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
2
10
0
357 2
10
1
357 2
10
2
357
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
C
ies
C
oes
C
res
V
GE
= 0V 10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
57
10
3
23 5723
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (ns)
COLLECTOR CURRENT I
C
(A)
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 2.1Ω
T
j
= 125°C
Inductive load
t
d(off)
t
d(on)
t
f
t
r
I
C
= 300A
I
C
= 150A
PERFORMANCE CURVES
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM150DY-24A
HIGH POWER SWITCHING USE
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
rr
I
rr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 2.1Ω
T
j
= 25°C
Inductive load 10
–3
10
2
10
1
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
23 57 23 57
Single Pulse
T
C
= 25°C
Under the chip
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c’)
(ratio)
TIME (s)
IGBT part:
Per unit base =
R
th(j–c)
= 0.13K/W
FWDi part:
Per unit base =
R
th(j–c)
= 0.23K/W
10
0
2
3
5
7
2
3
5
7
10
1
10
2
57
10
3
23 5723
RECOVERY LOSS vs. I
E
(TYPICAL)
RECOVERY LOSS (mJ/pulse)
EMITTER CURRENT I
E
(A)
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 2.1Ω
T
j
= 125°C
Inductive load
C snubber at bus Err
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS (mJ/pulse)
COLLECTOR CURRENT I
C
(A)
10
2
10
1
10
0
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
RECOVERY LOSS (mJ/pulse)
GATE RESISTANCE R
G
(Ω)
Conditions:
V
CC
= 600V
V
GE
= ±15V
I
E
= 150A
T
j
= 125°C
Inductive load
C snubber at bus
Err
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS (mJ/pulse)
GATE RESISTANCE R
G
(Ω)
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
1
10
2
57
10
3
23 5723
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 2.1Ω
T
j
= 125°C
Inductive load
C snubber at bus
Esw(off)
Esw(on)
10
2
10
1
10
0
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
Esw(off)
Esw(on) Conditions:
V
CC
= 600V
V
GE
= ±15V
I
C
= 150A
T
j
= 125°C
Inductive load
C snubber at bus
Feb. 2009
5
MITSUBISHI IGBT MODULES
CM150DY-24A
HIGH POWER SWITCHING USE
400200 800 1000600
0
4
8
16
12
20
0
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
GATE CHARGE QG (nC)
V
CC
= 600V
V
CC
= 400V
I
C
= 150A
