CDBU0240
Page 1
QW-A1029
REV:A
0.071(1.80)
0.063(1.60)
0.014(0.35) Typ.
0.039(1.00)
0.031(0.80)
0.033(0.85)
0.027(0.70)
Dimensions in inches and (millimeter)
0.012 (0.30) Typ.
0.028(0.70) Typ.
O
Maximum Rating (at TA=25 C unless otherwise noted)
Typ
VRRM
Repetitive peak reverse voltage
Symbol
Parameter Conditions Min
Max
Unit
V
45
VR
Reverse voltage V
40
IFSM
Forward current,surge peak 8.3 ms single half sine-wave superimposed
on rate load(JEDEC method) 2000
PDmW
OC
150
+125
-40
Power Dissipation
Sunction temperature
TjOC
+125
Junction temperature
TSTG
mA
IO
Average forward current mA
200
Symbol Typ
Parameter Conditions Min
Max
Unit
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
IRuA
Forward voltage IF = 200 mA DC VFV
0.55
9
CT
Capacitance between terimnals pF
F = 1 MHZ and 10 VDC reverse voltage
Reverse current VR = 30V 10
0.45
1
SMD Schottky Barrier Diode
0603/SOD-523F
Features
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0603/SOD-523F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-
-Mounting position: Any.
-Weight: 0.003 gram(approx.).
Polarity: Indicated by cathode band.
Io = 200 mA
VR = 40 Volts
RoHS Device
RATING AND CHARACTERISTIC CURVES (CDBU0240)
Forward current (mA )
Fig. 1 - Forward characteristics
Forward voltage (V)
Fig. 4 - Current derating curve
0
20
40
60
80
100
0 25 50 75 100 125 150
Mounting on glass epoxy PCBs
Average forward current ( % )
Fig. 3 - Capacitance between
terminals characteristics
Reverse voltage (V)
Capacitance between terminals (pF)
1
10
100
30
0 5 10
1
5
20 25 35
0.1 0.2 0.4 0.70 0.5
0.3
1000
0.001
10
100
Ambient temperature ( C )
f = 1 MHz
Ta = 25 C
0.6
1
0.1
0.01
75 C
-25 C
125 C
25 C
Reverse voltage (V)
Fig. 2 - Reverse characteristics
Reverse current ( A )
0 10 20 30 40
10u
1m
1n
1u
100u
10m
100n
10n
-25 C
75 C
25 C
125 C
Page 2
QW-A1029
REV:A
SMD Schottky Barrier Diode
